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    PJ2306 Price and Stock

    PanJit Semiconductor PJ2306_R1_00001

    (Alt: PJ2306_R1_00001)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Silica PJ2306_R1_00001 52 Weeks 168,000
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    PanJit Group PJ2306_R2_00001

    MOSFET DIS.3.2A 30V N-CH SOT23 SMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik PJ2306_R2_00001
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    PanJit Group PJ2306_R1_00001

    MOSFET DIS.3.2A 30V N-CH SOT23 SMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik PJ2306_R1_00001
    • 1 -
    • 10 $0.11395
    • 100 $0.11395
    • 1000 $0.11395
    • 10000 $0.0934
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    PJ2306 Datasheets Context Search

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    PJ2306

    Abstract: No abstract text available
    Text: PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@3.2A=65mΩ 0.006(0.15)MIN. • RDS(ON), VGS@4.5V,IDS@2.8A=85mΩ 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF PJ2306 OT-23 OT-23 MIL-STD-750 2010-REV PJ2306

    Untitled

    Abstract: No abstract text available
    Text: PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@4.5V,IDS@2.8A=85mΩ . 0.006(0.15)M IN • RDS(ON), VGS@10V,IDS@3.2A=65mΩ 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF PJ2306 2002/95/EC OT-23 MIL-STD-750 2010-REV

    Untitled

    Abstract: No abstract text available
    Text: PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@3.2A=65mΩ 0.006(0.15)MIN. • RDS(ON), VGS@4.5V,IDS@2.8A=85mΩ 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF PJ2306 OT-23 2011/65/EU IEC61249 OT-23 2010-REV

    Untitled

    Abstract: No abstract text available
    Text: PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@3.2A=65mΩ • RDS(ON), VGS@4.5V,IDS@2.8A=85mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition


    Original     		PDF PJ2306 2010-REV

    PJ2306

    Abstract: PJ-23 PJ230
    Text: PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@3.2A=65mΩ • RDS(ON), VGS@4.5V,IDS@2.8A=85mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition


    Original     		PDF PJ2306 2002/95/EC OT-23 MIL-STD-750 OT-23 2010-REV PJ2306 PJ-23 PJ230