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    PJ2301 Search Results

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    PJ2301 Price and Stock

    PanJit Group PJ2301_R1_00001

    20V P-CHANNEL ENHANCEMENT MODE M
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    DigiKey PJ2301_R1_00001 Cut Tape 1
    • 1 $0.3
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    PJ2301_R1_00001 Digi-Reel 1
    • 1 $0.3
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    PJ2301_R1_00001 Reel 3,000
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    Ozdisan Elektronik PJ2301_R1_00001
    • 1 -
    • 10 $0.11395
    • 100 $0.11395
    • 1000 $0.11395
    • 10000 $0.0934
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    PanJit Semiconductor PJ2301_R1_00001

    Rectifiers 600V,Fast Recovery Rectifiers,P-600,6A
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    Mouser Electronics PJ2301_R1_00001
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    NAC PJ2301_R1_00001 3,000
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    PanJit Semiconductor PJ2301_R1

    SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR POWER 400 Watt - 13IN. REEL. Package Type: SMA
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    NAC PJ2301_R1 Reel 1,800
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    PanJit Semiconductor PJ2301_R2

    SILICON ZENER DIODE - 7IN. REEL. Package Type: SOD-523
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    NAC PJ2301_R2 Reel 5,000
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    PanJit Group PJ2301_R2_00001

    MOSFET DIS.3.1A 20V P-CH SOT23 SMT
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    Ozdisan Elektronik PJ2301_R2_00001
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    • 10 $0.0865
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    PJ2301 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PJ230

    Abstract: No abstract text available
    Text: PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@-4.5V,ID@-2.2A=105mΩ 0.120(3.04) • Advanced Trench Process Technology 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC converters


    Original     		PDF PJ2301 DVH6273DFNDJH 2011-REV RB500V-40 PJ230

    PJ2301

    Abstract: No abstract text available
    Text: PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@-1.8V,ID@-1.5A=200mΩ • RDS(ON), VGS@-4.5V,ID@-2.2A=105mΩ • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC converters


    Original     		PDF PJ2301 DVH6273DFNDJH 2011-REV PJ2301

    PJ2301

    Abstract: No abstract text available
    Text: PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@-4.5V,ID@-2.2A=105mΩ 0.120(3.04) • Advanced Trench Process Technology 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC converters


    Original     		PDF PJ2301 2002/95/EC OT-23 MIL-STD-750 2011-REV PJ2301

    PJ2301

    Abstract: No abstract text available
    Text: PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@-4.5V,ID@-2.2A=105mΩ 0.120(3.04) • Advanced Trench Process Technology 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC converters


    Original     		PDF PJ2301 2002/95/EC OT-23 MIL-STD-750 2011-REV PJ2301