MF-1134
Abstract: SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL gas detector NDL5405 NDL5405C NDL5430C NDL5430CR NDL5471RC NDL5490 NDL5490L
Text: PRELIMINARY DATA SHEET PHOTO DIODE NDL5430C Series 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS for 10 Gb/s f30 mm InGaAs PIN PHOTO DIODE DESCRIPTION NDL5430C Series are InGaAs PIN photo diodes for 10 Gb/s long wavelength transmission systems. It covers
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NDL5430C
NDL5430C
NDL5430CR
MF-1134
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL
gas detector
NDL5405
NDL5405C
NDL5430CR
NDL5471RC
NDL5490
NDL5490L
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diode smd marking SOD323 5-6
Abstract: 20 GHz SMD PIN diode 20 GHz PIN diode smd marking blue 6 GHz SMD PIN diode BAR50-03W
Text: Diodes SMD Type Silicon PIN Diodes BAR50-03W SOD-323 Unit: mm +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 +0.1 1.3-0.1 Features Current-controlled RF resistor for switching and attenuating applications Frequency range above 10 MHz up to 6 GHz +0.1 2.6-0.1
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BAR50-03W
OD-323
diode smd marking SOD323 5-6
20 GHz SMD PIN diode
20 GHz PIN diode
smd marking blue
6 GHz SMD PIN diode
BAR50-03W
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43B diode
Abstract: DIODE S 43a marking code 43b marking 43b diode 43b marking 43C marking JC diode 43B MARKING marking 43a marking code 43a
Text: Silicon PIN Diodes ● High-speed switching ● Phase shifting up to 10 GHz ● Power splitter BXY 43 Type Marking Ordering Code Pin Configuration Package1 BXY 43A – Q62702-X116 Cathode: black dot, T1 BXY 43B Q62702-X104 BXY 43C Q62702-X105 Maximum Ratings
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Q62702-X116
Q62702-X104
Q62702-X105
43B diode
DIODE S 43a
marking code 43b
marking 43b
diode 43b
marking 43C
marking JC diode
43B MARKING
marking 43a
marking code 43a
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Untitled
Abstract: No abstract text available
Text: Hermetic PIN Diodes for Stripline/Microstrip Switches/ Attenuators Technical Data 5082-3140 5082-3141 Features Outline 60 • Broadband Operation HF through X-Band • Low Insertion Loss Less than 0.5 dB to 10 GHz 5082-3140 • High Isolation Greater than 20 dB to 10 GHz
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5965-8882E
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equivalent 3140
Abstract: a 3140 HP 5082-3140 AN929 hp 3140
Text: Hermetic PIN Diodes for Stripline/Microstrip Switches/ Attenuators Technical Data 5082-3140 5082-3141 Features Outline 60 • Broadband Operation HF through X-Band • Low Insertion Loss Less than 0.5 dB to 10 GHz 5082-3140 • High Isolation Greater than 20 dB to 10 GHz
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DC2118A
Abstract: DC2110A Marconi Applied Technologies modulators DC2110B DC2110C DC2110G DC2118B DC2118C DC2118G
Text: Waveguide PIN Diodes Suitable for use as switches, modulators, attenuators and limiters. * Low resistance * Frequency range 10 MHz to 18 GHz * Low capacitance * Mesa and planar versions available * High breakdown voltage Minimum Maximum Maximum reverse forward
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DC2110A
DC2110B
DC2110C
DC2110G
DC2118A
DC2118B
DC2118C
DC2118G
DC2119A
DC2119B
DC2118A
DC2110A
Marconi Applied Technologies
modulators
DC2110B
DC2110C
DC2110G
DC2118B
DC2118C
DC2118G
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BA479G
Abstract: BA479S
Text: BA479G.BA479S Vishay Telefunken Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current
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BA479G
BA479S
D-74025
01-Apr-99
BA479S
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BA479G
Abstract: BA479S
Text: BA479G.BA479S TELEFUNKEN Semiconductors Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current
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BA479G
BA479S
D-74025
BA479S
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BA479G
Abstract: BA479S
Text: BA479G.BA479S Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current Junction temperature
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BA479G
BA479S
D-74025
12-Dec-94
BA479S
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MA4P7455-1225
Abstract: PIN diode SPICE model - free
Text: MA4P7455-1225 Quad PIN Diode π Attenuator 10 - 4000 MHz Features • 4 PIN diodes in a SOT-25 Plastic Package • Externally Selectable Bias and RF Matching Network • 10 – 4,000 MHz Useable Frequency Band • + 43 dBm IP3 @ 1000 MHz 50 Ω • 1.0 dB Loss @ 1000 MHz (50 Ω)
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MA4P7455-1225
OT-25
MA4P274-1225
MA4P7455-1225
PIN diode SPICE model - free
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ma4p7455
Abstract: PIN diode MACOM SPICE model MA4P274-1225 M513 MA4P274-1225T MA4P7455-1225T
Text: MA4P274-1225 Quad PIN Diode π Attenuator 10 - 4000 MHz Features • 4 PIN diodes in a SOT-25 Plastic Package • Externally Selectable Bias and RF Matching Network • 10 – 4,000 MHz Useable Frequency Band • + 43 dBm IP3 @ 1000 MHz 50 Ω • 1.0 dB Loss @ 1000 MHz (50 Ω)
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MA4P274-1225
OT-25
MA4P274-1225
OT-25
ma4p7455
PIN diode MACOM SPICE model
M513
MA4P274-1225T
MA4P7455-1225T
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MA4P7455-1225T
Abstract: ma4p7455 bias ma4p7455 MA4P274-1225 M513 MA4P274 -1225 pin diode attenuator
Text: MA4P7455-1225 Quad PIN Diode π Attenuator 10 - 4000 MHz Features • 4 PIN diodes in a SOT-25 Plastic Package • Externally Selectable Bias and RF Matching Network • 10 – 4,000 MHz Useable Frequency Band • + 43 dBm IP3 @ 1000 MHz 50 Ω • 1.0 dB Loss @ 1000 MHz (50 Ω)
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MA4P7455-1225
OT-25
MA4P274-1225
MA4P7455-1225
MA4P7455-1225T
ma4p7455 bias
ma4p7455
MA4P274-1225
M513
MA4P274 -1225
pin diode attenuator
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Untitled
Abstract: No abstract text available
Text: MA4P7455-1225 Quad PIN Diode Attenuator 10 - 4000 MHz Features • 4 PIN diodes in a SOT-25 Plastic Package • Externally Selectable Bias and RF Matching Network • 10 – 4,000 MHz Useable Frequency Band • + 43 dBm IP3 @ 1000 MHz 50 Ω • 1.0 dB Loss @ 1000 MHz (50 Ω)
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MA4P7455-1225
OT-25
MA4P274-1225
MA4P7455-1225
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PIN diode SPICE model - free
Abstract: No abstract text available
Text: MA4P7455-1225 Quad PIN Diode π Attenuator 10 - 4000 MHz Features • 4 PIN diodes in a SOT-25 Plastic Package • Externally Selectable Bias and RF Matching Network • 10 – 4,000 MHz Useable Frequency Band • + 43 dBm IP3 @ 1000 MHz 50 Ω • 1.0 dB Loss @ 1000 MHz (50 Ω)
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MA4P7455-1225
OT-25
MA4P274-1225
MA4P7455-1225
PIN diode SPICE model - free
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BA779
Abstract: BA779S
Text: BA779.BA779S TELEFUNKEN Semiconductors Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current
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BA779
BA779S
50mmx50mmx1
D-74025
BA779S
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BA679
Abstract: BA679S
Text: BA679.BA679S TELEFUNKEN Semiconductors Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 9371 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current
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BA679
BA679S
50mmx50mmx1
D-74025
BA679S
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9734
Abstract: BA679 BA679S
Text: BA679.BA679S Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 9371 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current Junction temperature
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BA679
BA679S
50mmx50mmx1
D-74025
24-Jun-96
9734
BA679S
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BA979
Abstract: BA979S
Text: BA979.BA979S Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 96 12009 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current Junction temperature
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BA979
BA979S
50mmx50mmx1
D-74025
24-Jun-96
BA979S
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BA779
Abstract: No abstract text available
Text: BA779–2 TELEFUNKEN Semiconductors Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Type Symbol
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BA779
50mmx50mmx1
D-74025
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8550 sot-23
Abstract: BA779 BA779S
Text: BA779.BA779S Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current Junction temperature
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BA779
BA779S
50mmx50mmx1
D-74025
12-Dec-94
8550 sot-23
BA779S
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TEKELEC* diode
Abstract: Tekelec diode
Text: 2SE££>-< M 'M SS': ¿Si HIGH-VOLTAGE PIN AND NIP DIODES Silicon PIN Switching and Phase Shifting Multithrow Switch M odules. 10
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OCR Scan
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Untitled
Abstract: No abstract text available
Text: vtSHAY _ BA679.BA679S ▼ Vishay Telefunken Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled attenuators HF resistance In adjustable Absolute Maximum Ratings Tj = 25°C Parameter
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BA679
BA679S
50mmx50mmx1
D-74025
01-Apr-99
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5965-8882E
Abstract: POWER12 diode ph-150
Text: That müHÆHEWLETT PACKARD Hermetic PIN Diodes for Stripline/Microstrip Switches/ Attenuators Technical Data Features • Broadband Operation HF through X-Band • Low Insertion Loss Less than 0.5 dB to 10 GHz 5082-3140 • High Isolation Greater than 20 dB to 10 GHz
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5965-8882E
44475A4
5965-8882E
POWER12
diode ph-150
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Untitled
Abstract: No abstract text available
Text: BA779.BA779S_ v is h a y Vishay Telefunken Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators Absolute Maximum Ratings Tj = 25°C Parameter
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OCR Scan
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BA779
BA779S_
50mmx50mmx1
01-Apr-99
BA779S
OT-23
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