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    PHP30 Search Results

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    PHP30 Price and Stock

    Rochester Electronics LLC PHP30NQ15T,127

    MOSFET N-CH 150V 29A TO220AB
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    DigiKey PHP30NQ15T,127 Bulk 3,730 513
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    Microchip Technology Inc PHP30

    TVS DIODE
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    Mouser Electronics PHP30 20
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    Microchip Technology Inc PHP30 20
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    Onlinecomponents.com PHP30
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    NAC PHP30 Tray 25
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    NXP Semiconductors PHP3055E,127

    MOSFET N-CH 60V 10.3A TO220AB
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    DigiKey PHP3055E,127 Tube
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    Nexperia PHP30NQ15T,127

    MOSFET N-CH 150V 29A TO220AB
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    DigiKey PHP30NQ15T,127 Tube
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    Nexperia PHP30NQ15T127

    Trans MOSFET N-CH 150V 29A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: PHP30NQ15T,127)
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    Avnet Americas PHP30NQ15T127 Tube 4 Weeks 617
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    Find more PHP30 price and stock on Findchips.com

    PHP30 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PHP30 Protek Devices 30V 7.5 & 15KWatts AC power bus voltage suppressor. For secondary AC power supply, aircraft & shipboard AC power bus, heavy duty AC switching power Original PDF
    PHP30 Semtech 7,500 & 15,000 Watt TVS Module Original PDF
    PHP30 Sensitron Semiconductor Transient Voltage Suppressor, Unidirectional Original PDF
    PHP30 Microsemi Transient Absorption Zener Scan PDF
    PHP30 Microsemi Transient Absorption Zener Scan PDF
    PHP30 Semitronics Bidirectional Transient Voltage Suppressor Scan PDF
    PHP-300 Mini-Circuits HIGH PASS Filter 16.5 MHz to 2.2 GHz Original PDF
    PHP-300 Mini-Circuits HIGH PASS FLTR Original PDF
    PHP3055 Philips Semiconductors PowerMOS transistor Logic level FET Original PDF
    PHP3055E Philips Semiconductors TrenchMOS transistor Original PDF
    PHP3055E Philips Semiconductors N-channel TrenchMOS transistor Original PDF
    PHP3055E Philips Semiconductors TrenchMOS standard level FET Original PDF
    PHP3055E Philips Semiconductors PowerMOS transistor Original PDF
    PHP3055E Toshiba Power MOSFETs Cross Reference Guide Original PDF
    PHP3055E,127 NXP Semiconductors TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 10.3 A; Qgd (typ): 3.2 nC; RDS(on): 150@10V mOhm; VDSmax: 60 V; Package: SOT78 (TO-220AB); Container: Tube pack Original PDF
    PHP3055L Philips Semiconductors PowerMOS Transistor Logic Level FET Original PDF
    PHP3055L Toshiba Power MOSFETs Cross Reference Guide Original PDF
    PHP3055L-B Philips Semiconductors PowerMOS transistor Logic level FET Original PDF
    PHP30H1 Protek Devices AC POWER BUS VOLTAGE SUPPRESSOR Original PDF
    PHP30H2 Protek Devices AC POWER BUS VOLTAGE SUPPRESSOR Original PDF

    PHP30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PHP30

    Abstract: No abstract text available
    Text: Transient Voltage Suppressor- High min qty may apply PART NUMBER: PHP30 PACKAGE STYLE: CONFIGURATION:Transient Voltage Suppressor- High min qty may apply -All ratings are @ Tc = 25 °C unless otherwise specified. MAXIMUM RATINGS / ELECTRICAL CHARACTERISTICS


    Original     		PDF PHP30 PHP30

    PHP3055E

    Abstract: V9102
    Text: PHP3055E N-channel TrenchMOS standard level FET Rev. 07 — 26 February 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PDF PHP3055E PHP3055E V9102

    Untitled

    Abstract: No abstract text available
    Text: PHP/PHD3055E TrenchMOS standard level FET Rev. 06 — 25 March 2002 Product data 1. Description N-channel standard level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP3055E in SOT78 TO-220AB


    Original     		PDF PHP/PHD3055E PHP3055E O-220AB) PHD3055E OT428 OT428 MBB076 MBK091

    PHD3055E

    Abstract: PHP3055E
    Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PHP3055E, PHD3055E SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching d VDSS = 55 V ID = 10.3 A g RDS ON ≤ 150 mΩ (VGS = 10 V)


    Original     		PDF PHP3055E, PHD3055E PHP3055E O220AB) PHD3055E OT428

    PHB30NQ15T

    Abstract: PHP30NQ15T 502mj
    Text: PHP30NQ15T; PHB30NQ15T N-channel enhancement mode field-effect transistor Rev. 02 — 12 March 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		PDF PHP30NQ15T; PHB30NQ15T PHP30NQ15T O-220AB) PHB30NQ15T OT404 OT404, 502mj

    PHP30NQ15T

    Abstract: No abstract text available
    Text: PHP30NQ15T N-channel TrenchMOS standard level FET Rev. 03 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PDF PHP30NQ15T PHP30NQ15T

    PHD3055E

    Abstract: PHB3055E PHP3055E
    Text: Philips Semiconductors Preliminary specification TrenchMOS transistor FEATURES PHP3055E, PHB3055E, PHD3055E SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance


    Original     		PDF PHP3055E, PHB3055E, PHD3055E PHP3055E O220AB) PHB3055E OT404 PHD3055E

    PHP30NQ15T

    Abstract: PHB30NQ15T PHP30NQ15
    Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PHP30NQ15T, PHB30NQ15T SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 150 V


    Original     		PDF PHP30NQ15T, PHB30NQ15T PHP30NQ15T O220AB) PHB30NQ15T OT404 PHP30NQ15

    Untitled

    Abstract: No abstract text available
    Text: date 11/22/2013 page 1 of 6 SERIES: ETSA 150W U │ DESCRIPTION: AC-DC POWER SUPPLY FEATURES • • • • • • • • 150 W power universal input 90~264 Vac single regulated outputs over voltage, over current, and short circuit protections UL/cUL safety approvals


    Original     		PDF ETSA1201167U ETSA160938U ETSA190790U ETSA240625U ETSA360417U

    PHP-300

    Abstract: No abstract text available
    Text: Plug-In High Pass Filter PHP-300+ Typical Performance Curves Insertion Loss 10 Insertion Loss dB 20 30 40 50 60 70 80 90 100 1 10 100 1000 10000 1000 10000 Frequency (MHz) Return Loss 5 Return Loss (dB) 10 15 20 25 30 35 40 45 50 1 10 100 Frequency (MHz)


    Original     		PDF PHP-300+ PHP-300

    PHP3055E

    Abstract: PHX3055E PHX3055L
    Text: Philips Semiconductors Preliminary specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device features high avalanche energy capability, stable blocking


    Original     		PDF OT186A PHX3055L PHP3055E PHX3055E PHX3055L

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    MIL-S-19500/507

    Abstract: MIL-STD-1399
    Text: SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 560, REV. - 60KS200C Transient Voltage Suppressor, Bi-directional FEATURES: ♦ ♦ ♦ ♦ Equivalent Industry Standard Part Number – 60KS200C 200 Volt Bidirectional Exceeds MIL-STD-1399 Requirements Can be screened to JAN/JANTX level


    Original     		PDF 60KS200C MIL-STD-1399 MIL-PRF-19500/507A. MIL-PRF-19500/507 MIL-S-19500/507

    PHP3055E

    Abstract: PHP3055L
    Text: Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and


    Original     		PDF O220AB PHP3055L PHP3055E PHP3055L

    Untitled

    Abstract: No abstract text available
    Text: Plug-In High Pass Filter 50Ω PHP-300+ 290 to 1200 MHz Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power Input 0.5W max. Pin Connections INPUT 1 OUTPUT 8 GROUND 2,3,4,5,6,7 CASE GROUND 2,3,4,5,6,7 Features


    Original     		PDF PHP-300+ 2002/95/EC) M113397

    BLF4G08LS-160A

    Abstract: J3A080GA4/T0BG1610 MARKING S08 NXP TJA1050T-CM,11 power+wizard+1.1+fault+codes SCC2691AC1A28 IP5004CX6 TDA8275AHN/C1,557 H3-BGA3XX_11 BZA456A
    Text: NXP Semiconductors Product Discontinuation DN66 June 30, 2010 SEE DN66 NOTICE LETTER FOR APPLICABLE LAST TIME BUY TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. FOR ADDED INFORMATION, REFER TO NXP WEB-SITE "http://www.nxp.com/products/eol/"


    Original     		PDF 31-Dec-10 30-Jun-11 UBA2074AT/N1 UBA2074T/N1 UBA2074T/N1 31-Mar-11 UBA2074TS/N1 UBA2074TS/N1 BLF4G08LS-160A J3A080GA4/T0BG1610 MARKING S08 NXP TJA1050T-CM,11 power+wizard+1.1+fault+codes SCC2691AC1A28 IP5004CX6 TDA8275AHN/C1,557 H3-BGA3XX_11 BZA456A

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Text: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


    Original     		PDF DFN1006D-2 OD882D) DFN1010D-3 OT1215) DFN2020MD-6 OT1220) DFN1608D-2 OD1608) DSN0603 OD962) circuit diagram wireless spy camera PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143

    Untitled

    Abstract: No abstract text available
    Text: Plug-In High Pass Filter 50Ω PHP-300+ 290 to 1200 MHz Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power Input 0.5W max. •฀ rugged฀shielded฀case,฀hermetically฀sealed •฀ other฀standard฀and฀custom฀PHP฀models฀available฀฀


    Original     		PDF PHP-300+ 2002/95/EC) M113397

    MCL Php-600

    Abstract: 7404 not gate ic MCL SCHF-300 "shp 25" CR-14 NHP-1000 "7001-800" PHP-900 PHP-300 PHP-150
    Text: FILTERS 50 Ω Surface Mount ❏ HIGH PASS 16.5 MHz to 2.2 GHz SURFACE MOUNT SCHF STOP BAND, MHz MODEL NO. NEW SCHF-17 SCHF-25 SCHF-300 loss > 40dB (loss > 20 dB) PHP fco, MHz Nom. PASSBAND, MHz (loss 3 dB) (loss < 1 dB) Typ. Typ. VSWR Stopband Passband


    Original     		PDF SCHF-17 SCHF-25 SCHF-300 DC-13 DC-145 YY161 PHP-25 PHP-50 MCL Php-600 7404 not gate ic MCL SCHF-300 "shp 25" CR-14 NHP-1000 "7001-800" PHP-900 PHP-300 PHP-150

    diode sy 345

    Abstract: T0220AB
    Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP3055E QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and


    OCR Scan     		PDF PHP3055E T0220AB 100A4is; diode sy 345 T0220AB

    P3055L

    Abstract: P3055
    Text: Philips S em iconductors Product specification P o w e rM O S transistor PHP3055L L o g i c level F E T G E N E R A L DE SCRIPTION N-channel enhancement mode logic level field-effect power transistor in a


    OCR Scan     		PDF PHP3055L P3055L P3055

    PHD3055E

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification TrenchMOS transistor FEATURES PHP3055E, PHB3055E, PHD3055E SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance


    OCR Scan     		PDF PHP3055E, PHB3055E, PHD3055E T0220AB) PHD3055E

    transistor smd Q 865

    Abstract: SMD footprint design smd transistor 647 046 sot428 PHD3055E PHB3055E PHP3055E SC18 T0220AB T404
    Text: Preliminary specification Philips Semiconductors TrenchMOS transistor SYMBOL FEATURES • • • • • PHP3055E, PHB3055E, PHD3055E QUICK REFERENCE DATA d ’Trench’ technology Very low on-state resistance Fast switching High thermal cycling performance


    OCR Scan     		PDF PHP3055E, PHB3055E, PHD3055E PHP3055E T0220AB) PHB3055E OT404 transistor smd Q 865 SMD footprint design smd transistor 647 046 sot428 PHD3055E SC18 T0220AB T404

    s12w

    Abstract: PDC 140M PLP-21.4 S-40W s40w T560N T1-1-KK BA25L
    Text: Model Index D o t in d ic a t e s s u r fa c e m o u n t m o d e ls . mixers m odel A D E 'l . ADE-l A S K . AD E-l H . A D E -IH W . AD E-l L . A D E 'l LH . A D E 'IL H W .


    OCR Scan     		PDF TT25-1-KK81 TX16-R3T. s12w PDC 140M PLP-21.4 S-40W s40w T560N T1-1-KK BA25L