Infrared Phototransistor
Abstract: "infrared phototransistor" all datasheet phototransistor QEE213 QSE213C QSE214C
Text: QSE213C/QSE214C Plastic Silicon Infrared Phototransistor Features Description • ■ ■ ■ ■ ■ The QSE213C/QSE214C is a silicon phototransistor encapsulated in a medium angle, infrared transparent, clear thin plastic sidelooker package. NPN Silicon Phototransistor
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QSE213C/QSE214C
QSE213C/QSE214C
QEE213
Infrared Phototransistor
"infrared phototransistor"
all datasheet phototransistor
QEE213
QSE213C
QSE214C
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Infrared Phototransistor
Abstract: QEE213 QSE213 QSE214
Text: QSE213/QSE214 Plastic Silicon Infrared Phototransistor Features Description • ■ ■ ■ ■ ■ The QSE213/QSE214 is a silicon phototransistor encapsulated in a medium angle, infrared transparent, black thin plastic sidelooker package. NPN Silicon Phototransistor
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QSE213/QSE214
QSE213/QSE214
QEE213
Infrared Phototransistor
QEE213
QSE213
QSE214
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Untitled
Abstract: No abstract text available
Text: QSB363 / QSB363GR / QSB363YR / QSB363ZR Subminiature Plastic Silicon Infrared Phototransistor Features Description • • • • • • • • The QSB363 is a silicon phototransistor encapsulated in a black infrared transparent T-3/4 package. NPN Silicon Phototransistor
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QSB363
QSB363GR
QSB363YR
QSB363ZR
QEB363
QEB373
QSB363
QSB363GR
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optocoupler crossreference
Abstract: fairchild optocoupler cross reference MOC256 H11AA1M H11AA2M MOTOROLA Cross Reference Search H11L1M H11AA4M MOC3062M MOC3081M
Text: AC Input Phototransistor Small Outline Surface Mount Optocoupler MOC256 The MOC256 is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti–parallel and coupled to a silicon NPN phototransistor detector. They are designed for applications requiring the
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MOC256
E90700,
InputC215-M
MOC223-M
MOC3011-M
MOC3021-M
MOC3031-M
MOC3041-M
MOC3051-M
MOC3062-M
optocoupler crossreference
fairchild optocoupler cross reference
H11AA1M
H11AA2M
MOTOROLA Cross Reference Search
H11L1M
H11AA4M
MOC3062M
MOC3081M
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QEB363
Abstract: QEB373 QSB363 QSB363C Infrared Phototransistor
Text: QSB363C Subminiature Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a clear infrared T-3/4 package. ■ T-3/4 2mm Surface Mount Package ■ Medium Wide Beam Angle, 24°
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QSB363C
QSB363
QEB363
QEB373
QSB363C
QEB373
Infrared Phototransistor
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Untitled
Abstract: No abstract text available
Text: QSB363C Subminiature Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a clear infrared T-3/4 package. ■ T-3/4 2mm Surface Mount Package ■ Medium Wide Beam Angle, 24°
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QSB363C
QSB363
QEB363
QEB373
QSB363C
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Untitled
Abstract: No abstract text available
Text: 2.0x1.25mm PHOTOTRANSISTOR Part Number: APT2012P3BT Description Features 2.0mmx1.25mm SMT LED,0.75mm thickness. Made with NPN silicon phototransistor chips. Mechanically and spectrally matched to infrared emitting LED lamp. Package: 2000pcs / reel .
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APT2012P3BT
2000pcs
DSAH3784
JAN/03/2014
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Untitled
Abstract: No abstract text available
Text: 2.0x1.25mm PHOTOTRANSISTOR Part Number: APT2012P3BT Description Features z 2.0mmx1.25mm SMT LED,0.75mm thickness. Made with NPN silicon phototransistor chips. z Mechanically and spectrally matched to infrared emitting LED lamp. z Package: 2000pcs / reel .
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APT2012P3BT
2000pcs
DSAH3784
WYNECAH3784
JUN/06/2012
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Untitled
Abstract: No abstract text available
Text: 1.6X0.8mm PHOTOTRANSISTOR Part Number: KP-1608P1C Description Features 1.6mmX0.8mm SMT LED, 1.1mm thickness. Made with silicon phototransistor chips. Mechanically and spectrally matched to infrared emitting LED lamp. Water clear lens. Package: 2000pcs / reel.
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KP-1608P1C
2000pcs
DSAD0327
APR/221/2010
APR/21/2010
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Untitled
Abstract: No abstract text available
Text: 3.0X1.5mm PHOTOTRANSISTOR Part Number: APL3015P3C Description Features z 3.0mmx1.5mm SMT LED, 1.4mm thickness. Made with NPN silicon phototransistor chips. z Mechanically and spectrally matched to the infrared emitting LED lamp. z Package : 2000pcs / reel.
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APL3015P3C
2000pcs
DSAC5748
FEB/07/2012
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Untitled
Abstract: No abstract text available
Text: 3.0mmx1.0mm RIGHT ANGLE PHOTOTRANSISTOR Part Number: KPA-3010P3C Description Features z 3.0mmx1.0mm right angle SMT LED, 2.0mm thickness. Made with NPN silicon phototransistor chips. z Mechanically and spectrally matched to the infrared emitting LED lamp.
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KPA-3010P3C
2000pcs
spe10P3C
DSAB1638
AUG/14/2013
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Untitled
Abstract: No abstract text available
Text: 3.0mmx1.0mm RIGHT ANGLE PHOTOTRANSISTOR Part Number: APA3010P3BT-GX Description Features z 3.0mmx1.0mm right angle SMT LED, 2.0mm thickness. Made with NPN silicon phototransistor chips. z Mechanically and spectrally matched to the infrared emitting LED lamp.
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APA3010P3BT-GX
2000pcs
DSAL3679
JUL/11/2013
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Untitled
Abstract: No abstract text available
Text: 3.5x2.8mm PHOTOTRANSISTOR Part Number: AA3528P3S Description Features z Mechanically and spectrally matched to the infrared emitting Made with NPN silicon phototransistor chips. LED lamp. z Package : 2000pcs / reel. z Moisture sensitivity level : level 3.
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AA3528P3S
2000pcs
DSAL0864
SEP/01/2012
SAL0864
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Untitled
Abstract: No abstract text available
Text: 3.0mmx1.0mm RIGHT ANGLE PHOTOTRANSISTOR Part Number: KPA-3010P3C Description Features Made with NPN silicon phototransistor chips. z 3.0mmx1.0mm right angle SMT LED, 2.0mm thickness. z Mechanically and spectrally matched to the infrared emitting LED lamp.
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KPA-3010P3C
2000pcs
DSAB1638
AUG/14/2013
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Untitled
Abstract: No abstract text available
Text: 3.0mmx1.0mm RIGHT ANGLE PHOTOTRANSISTOR Part Number: KPA-3010P3C Description Features z 3.0mmx1.0mm right angle SMT LED, 2.0mm thickness. Made with NPN silicon phototransistor chips. z Mechanically and spectrally matched to the infrared emitting LED lamp.
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KPA-3010P3C
2000pcs
spe3010P3C
DSAB1638
JUL/25/2013
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Untitled
Abstract: No abstract text available
Text: 3.0mmx1.0mm RIGHT ANGLE PHOTOTRANSISTOR Part Number: APA3010P3BT-GX Description Features z 3.0mmx1.0mm right angle SMT LED, 2.0mm thickness. Made with NPN silicon phototransistor chips. z Mechanically and spectrally matched to the infrared emitting LED lamp.
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APA3010P3BT-GX
2000pcs
FEB/07/2011
DSAL3679
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H11AA4M
Abstract: H11AA2M H11AA1M H11AA1SM H11AA1SR2M H11AA1TM H11AA1VM H11AA3M H11AA1T H11AA1MS
Text: H11AA1M, H11AA2M, H11AA3M, H11AA4M AC Input/Phototransistor Optocouplers Features Description • Bi-polar emitter input The H11AAXM series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output.
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H11AA1M,
H11AA2M,
H11AA3M,
H11AA4M
H11AAXM
E90700,
H11AA4M
H11AA2M
H11AA1M
H11AA1SM
H11AA1SR2M
H11AA1TM
H11AA1VM
H11AA3M
H11AA1T
H11AA1MS
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Untitled
Abstract: No abstract text available
Text: PHOTOTRANSISTOR Part Number: L-3DP3BT Description Features z Mechanically and spectrally matched to the infrared emitting Made with NPN silicon phototransistor chips. LED lamp. z Blue transparent lens. z Daylight filter. z RoHS compliant. Package Dimensions
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DSAC5792
JAN/23/2014
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H11AA4M
Abstract: all datasheet phototransistor H11AA1 equivalent H11AA2M circuit infrared phototransistor for tv H11AA1SR2VM H11AA1M H11AA1SM H11AA1SR2M H11AA1TM
Text: H11AA1M, H11AA2M, H11AA3M, H11AA4M AC Input/Phototransistor Optocouplers Features Description • Bi-polar emitter input The H11AAXM series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output.
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H11AA1M,
H11AA2M,
H11AA3M,
H11AA4M
H11AAXM
E90700,
H11AA4M
all datasheet phototransistor
H11AA1 equivalent
H11AA2M
circuit infrared phototransistor for tv
H11AA1SR2VM
H11AA1M
H11AA1SM
H11AA1SR2M
H11AA1TM
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DS3002
Abstract: H11AA1 H11AA2 H11AA3 H11AA4 H11AAX
Text: AC INPUT/PHOTOTRANSISTOR OPTOCOUPLERS H11AA1 H11AA3 H11AA2 H11AA4 DESCRIPTION The H11AAX series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output. 6 1 FEATURES • • •
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H11AA1
H11AA3
H11AA2
H11AA4
H11AAX
E90700
E94766
DS3002
H11AA1
H11AA2
H11AA3
H11AA4
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QSC11
Abstract: No abstract text available
Text: QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor Features Description • ■ ■ ■ The QSC112/113/114 is a silicon phototransistor encapsulated in an infrared transparent, black T-1 package. Tight production distribution PACKAGE DIMENSIONS
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QSC112,
QSC113,
QSC114
QSC112/113/114
QSC11
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H11DX
Abstract: 4N38 H11D1 H11D2 H11D3 H11D4 DSA00106336
Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
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H11D1
H11D2
H11D3
H11D4
H11DX
H11D1,
H11D2,
H11D3,
H11D4,
E90700
4N38
H11D1
H11D2
H11D3
H11D4
DSA00106336
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H11DX
Abstract: H11D4.300 H11D12 4N38
Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
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H11DX
H11D1
H11D2
H11D3
H11D4
H11D1,
H11D2,
H11D3,
H11D4,
E90700
H11D4.300
H11D12
4N38
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Untitled
Abstract: No abstract text available
Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
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H11D1
H11D2
H11D3
H11D4
H11DX
H11D1,
H11D2,
H11D3,
H11D4,
E90700
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