APT2012P3BT
Abstract: No abstract text available
Text: 2.0x1.25mm PHOTOTRANSISTOR Part Number: APT2012P3BT Description Features z 2.0mmx1.25mm SMT LED,0.75mm THICKNESS. Made with NPN silicon phototansistor chips. z MECHANICALLY AND SPECTRALLY MATCHED TO INFRARED EMITTING LED LAMP. z BLUE TRANSPARENT LENS. z PACKAGE: 2000PCS / REEL .
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APT2012P3BT
2000PCS
DSAH3784
APR/29/2007
100mW
APT2012P3BT
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APT2012P3BT
Abstract: No abstract text available
Text: 2.0x1.25mm PHOTOTRANSISTOR Part Number: APT2012P3BT Description Features z 2.0mmx1.25mm SMT LED,0.75mm thickness. Made with NPN silicon phototansistor chips. z Mechanically and spectrally matched to infrared emitting LED lamp. z Package: 2000pcs / reel . z Moisture sensitivity level : level 3.
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APT2012P3BT
2000pcs
DSAH3784
SEP/06/2010
P/06/2010
APT2012P3BT
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APT2012P3BT
Abstract: No abstract text available
Text: 2.0x1.25mm PHOTOTRANSISTOR Part Number: APT2012P3BT Features Description z 2.0mmx1.25mm SMT LED,0.75mm thickness. Made with NPN silicon phototansistor chips. z Mechanically and spectrally matched to infrared emitting LED lamp. z Blue transparent lens. z Package: 2000pcs / reel .
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APT2012P3BT
2000pcs
DSAH3784
APR/13/2009
APT2012P3BT
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Untitled
Abstract: No abstract text available
Text: 2.0x1.25mm PHOTOTRANSISTOR Part Number: APT2012P3BT Description Features 2.0mmx1.25mm SMT LED,0.75mm thickness. Made with NPN silicon phototransistor chips. Mechanically and spectrally matched to infrared emitting LED lamp. Package: 2000pcs / reel .
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APT2012P3BT
2000pcs
DSAH3784
JAN/03/2014
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Untitled
Abstract: No abstract text available
Text: 2.0x1.25mm PHOTOTRANSISTOR Part Number: APT2012P3BT Description Features z 2.0mmx1.25mm SMT LED,0.75mm thickness. Made with NPN silicon phototransistor chips. z Mechanically and spectrally matched to infrared emitting LED lamp. z Package: 2000pcs / reel .
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APT2012P3BT
2000pcs
DSAH3784
WYNECAH3784
JUN/06/2012
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