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    PHOTOTRANSISTOR 950 NM Search Results

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    gabellichtschranke

    Abstract: GPXY6010 datasheet ic 4060 Fototransistor Q62702-P5214 DSA006333 voltage detector IC
    Text: Gabellichtschranke Slotted Interrupter SFH 9310 Wesentliche Merkmale • Kompaktes Gehäuse • GaAs-IR-Sendediode 950 nm • Si-Fototransistor mit Tageslichtsperrfilter Features • Compact type • GaAs infrared emitter (950 nm) • Silicon phototransistor detector with


    Original     		PDF GPXY6010 gabellichtschranke GPXY6010 datasheet ic 4060 Fototransistor Q62702-P5214 DSA006333 voltage detector IC

    Q62702-P5214

    Abstract: gabellichtschranke opto 101 9310
    Text: Gabellichtschranke Slotted Interrupter SFH 9310 Wesentliche Merkmale • Kompaktes Gehäuse • GaAs-IR-Sendediode 950 nm • Si-Fototransistor mit Tageslichtsperrfilter Features • Compact type • GaAs infrared emitter (950 nm) • Silicon phototransistor detector with


    Original     		PDF GPX06010 Q62702-P5214 gabellichtschranke opto 101 9310

    fototransistor

    Abstract: gabellichtschranke Q62702-P5214
    Text: Gabellichtschranke Slotted Interrupter SFH 9310 Wesentliche Merkmale Features • Kompaktes Gehäuse • GaAs-IR-Sendediode 950 nm • Si-Fototransistor mit Tageslichtsperrfilter • Compact type • GaAs infrared emitter (950 nm) • Silicon phototransistor detector with


    Original     		PDF

    near IR sensors with daylight filter

    Abstract: No abstract text available
    Text: TEST2600 Vishay Semiconductors Silicon NPN Phototransistor Description TEST2600 is a high sensitive silicon NPN epitaxial planar phototransistor in miniature side view plastic package with cylindrical lens. The integrated Daylight filter is matched to IR emitters, λp = 950 nm .


    Original     		PDF TEST2600 TEST2600 TSSS2600 2002/95/EC 2002/96/EC 25ake D-74025 08-Mar-05 near IR sensors with daylight filter

    near IR sensors with daylight filter

    Abstract: TEST2600 TSSS2600
    Text: TEST2600 Vishay Semiconductors Silicon NPN Phototransistor Description TEST2600 is a high sensitive silicon NPN epitaxial planar phototransistor in miniature side view plastic package with cylindrical lens. The integrated Daylight filter is matched to IR emitters, λp = 950 nm .


    Original     		PDF TEST2600 TEST2600 TSSS2600 2002/95/EC 2002/96/EC 08-Apr-05 near IR sensors with daylight filter

    Untitled

    Abstract: No abstract text available
    Text: TEST2600 Vishay Semiconductors Silicon NPN Phototransistor Description TEST2600 is a high sensitive silicon NPN epitaxial planar phototransistor in miniature side view plastic package with cylindrical lens. The integrated Daylight filter is matched to IR emitters, λp = 950 nm .


    Original     		PDF TEST2600 TEST2600 TSSS2600 2002/95/EC 2002/96/EC 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: TEMT3700F Vishay Semiconductors Silicon NPN Phototransistor Description TEMT3700F is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package with integrated IR band pass filter 950 nm . Features • • • • • High sensitivity


    Original     		PDF TEMT3700F TEMT3700F TSMS3700 TSML3710 2002/95/EC 2002/96/EC TEMT3700F-GS08 TEMT3700F-GS18 08-Apr-05

    TEMT3700F-GS08

    Abstract: TEMT3700F-GS18 TSML3710 TSMS3700
    Text: TEMT3700F Vishay Semiconductors Silicon NPN Phototransistor Description TEMT3700F is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package with integrated IR band pass filter 950 nm . Features • • • • • High sensitivity


    Original     		PDF TEMT3700F TEMT3700F TSMS3700 TSML3710 2002/95/EC 2002/96/EC D-74025 08-Mar-05 TEMT3700F-GS08 TEMT3700F-GS18 TSML3710

    Untitled

    Abstract: No abstract text available
    Text: TEMT3700F Vishay Semiconductors Silicon NPN Phototransistor Description TEMT3700F is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package with integrated IR band pass filter 950 nm . Features • • • • • • •


    Original     		PDF TEMT3700F TEMT3700F TSMS3700 TSML3710 2002/95/EC 2002/96/EC TEMT3700F-GS08 TEMT3700F-GS18 08-Apr-05

    near IR sensors with daylight filter

    Abstract: No abstract text available
    Text: TEST2600 VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description TEST2600 is a high sensitive silicon NPN epitaxial planar phototransistor in miniature side view plastic package with cylindrical lens. The integrated Daylight filter is matched to IR emitters, λp = 950 nm .


    Original     		PDF TEST2600 TEST2600 TSSS2600 D-74025 07-Apr-04 near IR sensors with daylight filter

    TEMT3700F-GS08

    Abstract: TEMT3700F-GS18 TSML3710 TSMS3700
    Text: TEMT3700F VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description TEMT3700F is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package with integrated IR band pass filter 950 nm . Features • • • • • High sensitivity


    Original     		PDF TEMT3700F TEMT3700F TSMS3700 TSML3710 TEMT3700F-GS08 D-74025 21-Jun-04 TEMT3700F-GS08 TEMT3700F-GS18 TSML3710

    Untitled

    Abstract: No abstract text available
    Text: TEMT3700F VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description TEMT3700F is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package with integrated IR band pass filter 950 nm . Features • • • • • High sensitivity


    Original     		PDF TEMT3700F TEMT3700F TSMS3700 TSML3710 D-74025 09-Jun-04

    Untitled

    Abstract: No abstract text available
    Text: TCPT1300X01 Vishay Semiconductors Subminiature Dual Channel Transmissiv Sensor with Phototransistor Output Description TCPT1300X01, a transmissive optical sensor SMD including an IR emitter and a Phototransistor detector located face to face with 3 mm gap and 0.3 mm aperture dimension. The operating wavelength is 950 nm.


    Original     		PDF TCPT1300X01 TCPT1300X01, 2002/95/EC 2002/96/EC 08-Apr-05

    VEMT3700F

    Abstract: VSML3710 vemt
    Text: VEMT3700F Vishay Semiconductors Silicon NPN Phototransistor FEATURES • • • • • • • • • • • • 19032 DESCRIPTION VEMT3700F is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package. The integrated daylight blocking filter is matched to 950 nm


    Original     		PDF VEMT3700F VEMT3700F VSML3710 J-STD-020 11-Mar-11 VSML3710 vemt

    TCST1103

    Abstract: TCST2202 TCST210 TCST110 TCST1202 TCST1300 TCST2103 TCST230 TCST2300 TCST1103A
    Text: TCST110. up to TCST230. Transmissive Optical Sensor with Phototransistor Output Description The operating wavelength is 950 nm. The detector consists of a phototransistor. This device has a compact construction where the emitting-light sources and the detectors are located faceto-face on the same optical axis.


    Original     		PDF TCST110. TCST230. D-74025 16-Apr-98 TCST1103 TCST2202 TCST210 TCST110 TCST1202 TCST1300 TCST2103 TCST230 TCST2300 TCST1103A

    vemt3700f-gs08

    Abstract: No abstract text available
    Text: VEMT3700F Vishay Semiconductors Silicon NPN Phototransistor FEATURES • • • • • • • • • • • • 19032 DESCRIPTION VEMT3700F is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package. The integrated daylight blocking filter is matched to 950 nm


    Original     		PDF VEMT3700F VSML3710 J-STD-020 2002/95/EC 2002/96/EC VEMT3700F 18-Jul-08 vemt3700f-gs08

    Untitled

    Abstract: No abstract text available
    Text: VEMT3700F Vishay Semiconductors Silicon NPN Phototransistor FEATURES • • • • • • • • • • • • 19032 DESCRIPTION VEMT3700F is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package. The integrated daylight blocking filter is matched to 950 nm


    Original     		PDF VEMT3700F VSML3710 J-STD-020 2002/95/EC 2002/96/EC VEMT3700F 2011/65/EU 2002/95/EC. 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: VEMT3700F Vishay Semiconductors Silicon NPN Phototransistor FEATURES • • • • • • • • • • • • 19032 DESCRIPTION VEMT3700F is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package. The integrated daylight blocking filter is matched to 950 nm


    Original     		PDF VEMT3700F VEMT3700F VSML3710 J-STD-020 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: VEMT3700F Vishay Semiconductors Silicon NPN Phototransistor FEATURES • • • • • • • • • • • • 19032 DESCRIPTION VEMT3700F is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package. The integrated daylight blocking filter is matched to 950 nm


    Original     		PDF VEMT3700F VEMT3700F VSML3710 J-STD-020 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    VEMT3700F

    Abstract: VSML3710
    Text: VEMT3700F Vishay Semiconductors Silicon NPN Phototransistor FEATURES • • • • • • • • • • • • 19032 DESCRIPTION VEMT3700F is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package. The integrated daylight blocking filter is matched to 950 nm


    Original     		PDF VEMT3700F VEMT3700F VSML3710 J-STD-020 18-Jul-08 VSML3710

    Telefunken Phototransistor

    Abstract: TCST5123
    Text: TCST5123 Transmissive Optical Sensor with Phototransistor Output Description These devices have a compact construction where the emitting-light sources and the detectors are located faceto-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a phototransistor. Due to the special construction, the depth of the


    Original     		PDF TCST5123 D-74025 17-Jun-96 Telefunken Phototransistor TCST5123

    74HCT14

    Abstract: TCUT1200X01
    Text: TCUT1200X01 Vishay Semiconductors Subminiature Dual Channel Transmissiv Sensor with Phototransistor Output Description TCUT1200X01 has a compact construction where the emitter and two detectors are located face to face. The operating wavelength is 950 nm.


    Original     		PDF TCUT1200X01 TCUT1200X01 2002/95/EC 2002/96/EC D-74025 11-Feb-05 74HCT14

    Untitled

    Abstract: No abstract text available
    Text: TCUT1200X01 Vishay Semiconductors Subminiature Dual Channel Transmissiv Sensor with Phototransistor Output Description TCUT1200X01 has a compact construction where the emitter and two detectors are located face to face. The operating wavelength is 950 nm.


    Original     		PDF TCUT1200X01 TCUT1200X01 2002/95/EC 2002/96/EC 08-Apr-05

    opt coupler

    Abstract: TCST2202 TCST2103
    Text: Tem ic Semiconductors TCST110. up to TCST230 Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the The operating wavelength is 950 nm. The detector emitting-light sources and the detectors are located face- consists of a phototransistor,


    OCR Scan     		PDF TCST110. TCST230 D-74025 16-Apr-98 opt coupler TCST2202 TCST2103