CS-1336
Abstract: No abstract text available
Text: PHOTODIODE Si photodiode S1336 series UV to near IR for precision photometry Features Applications ● High sensitivity ● Low capacitance ● High reliability ● Analytical instruments ● Optical measurement equipment • General ratings / Absolute maximum ratings
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S1336
S1336-18BQ
S1336-18BK
S1336-5BQ
S1336-5BK
S1336-44BQ
S1336-44BK
S1336-8BQ
S1336-8BK
SE-171
CS-1336
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far uv photodiode
Abstract: Radiation Detector
Text: PHOTODIODE Si PIN photodiode S1722-02 Large area, high-speed PIN photodiodes for UV to near IR photometry S1722-02 is a high-speed Si PIN photodiode having a large active area of φ4.1 mm. Using quartz glass as the light input window, this photodiode delivers high sensitivity extending to the far UV region and is suitable for optical power meters.
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S1722-02
S1722-02
SE-171
KPIN1045E04
far uv photodiode
Radiation Detector
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Borosilicate
Abstract: No abstract text available
Text: Si photodiodes S2386 series For visible to IR, general-purpose photometry Features Applications High sensitivity Analytical instruments Low dark current Optical measurement equipment High reliability Superior linearity General ratings / Absolute maximum ratings
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S2386
S2386-18K
S2386-18L
S2386-5K
S2386-44K
S2386-45K
S2386-8K
S2386-14
SE-171
KSPD1035E04
Borosilicate
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si photodiode S6337-01 Large area photodiode for UV to IR, precision photometry S6337-01 is a large area Si photodiode that features excellent spatial response uniformity over a wide range from UV to IR. S6337-01 will prove useful for precision photometry and as a standard detector for spectral response calibration.
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S6337-01
S6337-01
SE-171
KSPD1029E01
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si photodiode S2551 For visible to infrared precision photometry S2551 is a Si photodiode having a long active area of 1.2 x 29.1 mm, designed for visible to infrared precision photometry. Features Applications l Long, narrow active area: 1.2 × 29.1 mm
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S2551
S2551
SE-171
KSPD1027E02
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Untitled
Abstract: No abstract text available
Text: Si photodiode S2551 For visible to infrared precision photometry S2551 is a Si photodiode having a long active area of 1.2 x 29.1 mm, designed for visible to infrared precision photometry. Features Applications Long, narrow active area: 1.2 × 29.1 mm Analytical instruments
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S2551
S2551
SE-171
KSPD1027E03
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C7557-01
Abstract: linear CCD 512 software
Text: Multichannel detector head controller C7557-01 For control of multichannel detector head and data acquisition The C7557-01 is specifically designed for basic control in multichannel photometry. When connected to a HAMAMATSU multichannel detector head and a personal computer, the C7557-01 allows easy control of the detector head and data acquisition by using dedicated software that
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C7557-01
C7557-01
SE-171
KACC1153E01
linear CCD 512
software
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si photodiode S1226 series For UV to visible, precision photometry; suppressed IR sensitivity Features Applications l High UV sensitivity: QE 75 % λ=200 nm l Suppressed IR sensitivity l Low dark current l High reliability l Analytical equipment
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S1226
SE-171
KSPD1034E04
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode G8421/G8371/G5851 series Long wavelength type Features Applications l Long cut-off wavelength: 1.9 µm l Optical power meter l 3-pin TO-18 package: low price l Gas analyzer l Thermoelectrically cooled TO-18 package: low dark current l NIR near infrared photometry
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G8421/G8371/G5851
A3179
A3179-01
C1103-04
SE-171
KIRD1046E05
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deuterium lamp circuit
Abstract: uv tube lamp circuits AC Photonics uv deuterium lamp circuit electron lamp L7820 deuterium lamp
Text: NEW Calibrated Deuterium Light Source L7820 is a logo mark for an accreditation system based on Japanese Measurement Law. Our Planning & Engineering Division is accredited in accordance with ISO/IEC Guide 25: 1990 in the field of photometry calibration. Our accreditation number is 0081.
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L7820
SE-171-41
TLSO1044E01
deuterium lamp circuit
uv tube lamp circuits
AC Photonics
uv deuterium lamp circuit
electron lamp
L7820
deuterium lamp
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POWER SUPPLY FOR XENON LAMP
Abstract: xenon lamp deuterium lamp circuit xenon tube electron lamp uv tube lamp circuits L7810 UV source 250 nm hamamatsu POWER SUPPLY FOR XENON LAMP hamamatsu lamp power supply
Text: NEW Calibrated Xenon Light Source L7810 is a logo mark for an accreditation system based on Japanese Measurement Law. Our Planning & Engineering Division is accredited in accordance with ISO/IEC Guide 25: 1990 in the field of photometry calibration. Our accreditation number is 0081.
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L7810
SE-171-41
TLSO1039E01
POWER SUPPLY FOR XENON LAMP
xenon lamp
deuterium lamp circuit
xenon tube
electron lamp
uv tube lamp circuits
L7810
UV source 250 nm
hamamatsu POWER SUPPLY FOR XENON LAMP
hamamatsu lamp power supply
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half watt led OSRAM
Abstract: 1 watt led OSRAM photomultiplier sensor
Text: LEDs and Photometry Appnote 1 The observed spectrum of electromagnetic radiations, extends from a few Hz to beyond 1024 Hz, covering some 80 octaves. The narrow channel from 430 THz to 750 THz would be entirely negligible, except that more information is communicated to
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1-888-Infineon
half watt led OSRAM
1 watt led OSRAM
photomultiplier sensor
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Untitled
Abstract: No abstract text available
Text: Si photodiodes S2387 series For visible to IR, general-purpose photometry Features Applications High sensitivity in visible to infrared range Analytical equipment Low dark current Optical measurement equipment, etc. High linearity Structure / Absolute maximum ratings
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S2387
S2387-16R
S2387-33R
S2387-66R
S2387-1010R
S2387-130R
KSPD1033E05
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Untitled
Abstract: No abstract text available
Text: Si photodiode S12742-254 Photodiode with interference filter for monochromatic light 254 nm detection The S12742-254 uses an interference filter for its window and is sensitive only to monochromatic light. The spectral response width is extremely narrow at 10 nm (FWHM), allowing accurate photometry without any effects of stray light. The
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S12742-254
S12742-254
B1201,
KSPD1082E02
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photodiode CIE eye response
Abstract: PIN-10AP uv photodiode for 254nm UDT Sensors PIN-10DF UDT 260 detector 555D PIN-555AP PIN-005D-254F UDT BNC
Text: DETECTOR-FILTER COMBINATION SERIES PLANAR DIFFUSED SILICON PHOTODIODES APPLICATIONS • Analytical Chemistry • photometry • Densitometers • Photometry/Radiometry • Spectroradiometry • Medical Instrumentation • Liquid Chromatography The Detector-Filter combination series incorporates a filter with a photodiode
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PIN-10DF
PIN-005D-254F
PIN-10DF
photodiode CIE eye response
PIN-10AP
uv photodiode for 254nm
UDT Sensors
UDT 260 detector
555D
PIN-555AP
PIN-005D-254F
UDT BNC
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luminance sensor
Abstract: No abstract text available
Text: LEDs and Photometry Appnote 1 by George Smith The observed spectrum of electromagnetic radiations, extends from a few Hz to beyond 1024 Hz, covering some 80 octaves. The narrow channel from 430 THz to 750 THz would be entirely negligible, except that more information is communicated to
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si photodiode S1336 series UV to near IR for precision photometry Features Applications ● High sensitivity ● Low capacitance ● High reliability ● Analytical instruments ● Optical measurement equipment • General ratings / Absolute maximum ratings
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S1336
S1336-18BQ
S1336-18BK
S1336-5BQ
S1336-5BK
S1336-44BQ
S1336-44BK
S1336-8BQ
S1336-8BK
SE-171
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Untitled
Abstract: No abstract text available
Text: Distribution Photometry Report Report Number: Date: 06-07-2011 Catalog Number: Description: 23_DFL-V0606N #1_110706 Test Distance: 10.293m Test Electrical Parameters: Voltage: 219.88, Current: 0.2871, Power: 60.61 Filename: 23_DFL-V0606N #1_110706.ies Total Uncertainties of Measurement:
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DFL-V0606N
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Untitled
Abstract: No abstract text available
Text: Si photodiodes S1337 series For UV to I R, precision photometry Features Applications High UV sensitivity: QE 75% λ= 200 nm Analytical equipment Low capacitance Optical measurement equipment Structure / Absolute maximum ratings Type No. S1337-16BQ S1337-16BR
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S1337
S1337-16BQ
S1337-16BR
S1337-33BQ
S1337-33BR
S1337-66BQ
S1337-66BR
S1337-1010BQ
S1337-1010BR
S1337-21
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RCA-7326
Abstract: Photocathode B14-38 S-20 7326 RCA732
Text: 7326 MULTIPLIER PHOTOTUBE 1 .68" D i a . Curv ed C i r c u la r Se m itran sp are nt Photocathode 10-Stage, TENTATIVE RCA-7326 phototube as is a head-on intended flying-spot for type use scanning in the In photometry, low d a r k as high entire its fast and
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10-Stage,
14-Pin
RCA-7326
Photocathode
B14-38
S-20
7326
RCA732
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Untitled
Abstract: No abstract text available
Text: Ge Photodiodes Cooled Types Achieves higher S/N ratio by cooling • Optimized for low level infrared photometry • Lower temperature detection limit: Approx. 200 °C By cooling Ge photodiodes, the dark current can be reduced effec tively and the S/N ratio improved.
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P3226-02
P394A,
P3207-04
P791-11
P4115
P3981-01,
K3413-01,
K1713-01,
KIRDA0041EA
P2750,
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hamamatsu S875
Abstract: S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133
Text: HAMAMATSU CORP n E Silicon Photodiodes Type No. D • ‘JHST b G ' i 0 0 G S S 24 Visible Light to IR, for Precision Photometry Photosensitive Surface Spectral Response Out line Package (mm) «J Characteristics (25°C) Radian Sensitivity (A/W) Size
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560nm
633nm
930nm
S2386
S2386-18K
S1133-01,
S1133-11,
S1087-01,
G1118,
G1738
hamamatsu S875
S1190-01
S1188-02
S2387-16R
900nm LED
S2506
S1190 hamamatsu
S1721
S2216 02
Hamamatsu S1133
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Untitled
Abstract: No abstract text available
Text: 21/05/2002 11:54 S. L. I. -> 01132794449 NO.696 PRODUCI DATASHEET Type_ Incandescent o m 001 INTERNATIONAL Size T5 24V 0.04A T-l '/i Bead Seal Lamo 0 0.25 - A L 14,0 Mo « 687BS 0.30 25.4 Min Drawing Not To Scale All Dimensions In mm PHOTOMETRY DATA CURRENT mA
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687BS
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CHA Series
Abstract: photodiode ge CHA-200 CHA-204 Centronic series t
Text: CENTRQNIC INC» E-0 13E D | DIV m sa so 7- 0 D 0 0 2 C1C1 T | I 1 TECHNICAL DATA SHEET C H A -200 C H A -204 HYBRID PHOTOMETRY AMPLIFIER C entro n ic CHA s e r ie s of p h o to d e te c to rs i s a h y b rid photom etry a m p lifie r w ith a b u i l t - i n GaAsP photodiode MQS FET
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CHA-200
CHA-204
005Lux
000Lux.
CHA-204
5X103
5X10-3
500Lux
CHA Series
photodiode ge
Centronic series t
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