Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si photodiode S1226-18BU, S1336-18BU For high power UV monitor, and UV to visible, precision photometry S1226-18BU and S1336-18BU are Si photodiodes encapsulated in a TO-18 package with a UV glass window. These photodiodes have high sensitivity from the UV to near infrared range and operate reliably when detecting high power UV radiation such as from mercury lamps .
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S1226-18BU,
S1336-18BU
S1226-18BU
S1336-18BU
SE-171
KSPD1037E02
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InGaAs quadrant
Abstract: C30822E UV245BG UV-215BQ C30971 C30641EH-TC FFD-100 YAG-100A
Text: Photodiodes for High-Performance Applications PIN Photo- PIN Photodiodes InGaAs and Si PIN Diodes, Quadrant Detectors, UV-Enhanced diodes For Industrial Applications InGaAs and Si PIN Diodes – Quadrant Detectors – UV-Enhanced Applications • Telecom
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C30845EH
YAG-444-4AH
DTC-140H
InGaAs quadrant
C30822E
UV245BG
UV-215BQ
C30971
C30641EH-TC
FFD-100
YAG-100A
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hamamatsu S1336
Abstract: S1336-18BU uv photodiode UV photodiodes 254 S1226-18BU SE-171 KrF excimer
Text: PHOTODIODE Si photodiode S1226-18BU, S1336-18BU For high power UV monitor, and UV to visible, precision photometry S1226-18BU and S1336-18BU are Si photodiodes encapsulated in a TO-18 package with a UV glass window. These photodiodes have high sensitivity from the UV to near infrared range and operate reliably when detecting high power UV radiation such as from mercury lamps .
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S1226-18BU,
S1336-18BU
S1226-18BU
S1336-18BU
S1226-18BU
SE-171
KSPD1037E02
hamamatsu S1336
uv photodiode
UV photodiodes 254
KrF excimer
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S1336-18BU
Abstract: S1226-18BU SE-171
Text: PHOTODIODE Si photodiode S1226-18BU, S1336-18BU For high power UV monitor, and UV to visible, precision photometry S1226-18BU and S1336-18BU are Si photodiodes encapsulated in a TO-18 package with a UV glass window. These photodiodes have high sensitivity from the UV to near infrared range and operate reliably when detecting high power UV radiation such as from mercury lamps .
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S1226-18BU,
S1336-18BU
S1226-18BU
S1336-18BU
S1226-18BU
SE-171
KSPD1037E01
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UV photodiodes
Abstract: S8551 S8552 S8553 SE-171 LARGE SURFACE AREA PHOTODIODE
Text: PHOTODIODE Si photodiode S8551, S8552, S8553 Photodiodes for VUV Vacuum UV detection S8551, S8552 and S8553 are VUV (Vacuum UV) photodiodes suitable for detection of ArF excimer lasers (λ=193 nm). Designed to provide optimal performance in the VUV range, these photodiodes offer more stable sensitivity even after long exposure to VUV radiation compared with
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S8551,
S8552,
S8553
S8552
S8553
S8551:
S8552:
S8553:
UV photodiodes
S8551
SE-171
LARGE SURFACE AREA PHOTODIODE
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DSASW005210
Abstract: 1BW 58 S8551 S8552 S8553 SE-171 UV photodiodes photodiodes
Text: PHOTODIODE Si photodiode S8551, S8552, S8553 Photodiodes for VUV Vacuum UV detection S8551, S8552 and S8553 are VUV (Vacuum UV) photodiodes suitable for detection of ArF excimer lasers (λ=193 nm). Designed to provide optimal performance in the VUV range, these photodiodes offer more stable sensitivity even after long exposure to VUV radiation compared with
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S8551,
S8552,
S8553
S8552
S8553
S8551:
S8552:
S8553:
DSASW005210
1BW 58
S8551
SE-171
UV photodiodes
photodiodes
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si photodiode S8551, S8552, S8553 Photodiodes for VUV Vacuum UV detection S8551, S8552 and S8553 are VUV (Vacuum UV) photodiodes suitable for detection of ArF excimer lasers (λ=193 nm). Designed to provide optimal performance in the VUV range, these photodiodes offer more stable sensitivity even after long exposure to VUV radiation compared with
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S8551,
S8552,
S8553
S8552
S8553
S8551:
S8552:
S8553:
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S8551
Abstract: S8552 S8553 SE-171
Text: PHOTODIODE Si photodiode S8551, S8552, S8553 Photodiodes for VUV Vacuum UV detection S8551, S8552 and S8553 are VUV (Vacuum UV) photodiodes suitable for detection of ArF excimer lasers (λ=193 nm). Designed to provide optimal performance in the VUV range, these photodiodes offer more stable sensitivity even after long exposure to VUV radiation compared with
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S8551,
S8552,
S8553
S8552
S8553
S8551:
S8552:
S8553:
S8551
SE-171
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C30703
Abstract: No abstract text available
Text: Avalanche Photodiodes Photodiodes for High-Performance Applications FOR HIGH ENERGY RADIATION DETECTIONS APPLICATIONS, Large Area Si-APDs – UV-Enhanced APDs MOLECULAR IMAGING Large Area Si-APDs – UV-Enhanced APDs Applications • Nuclear medicine • Fluorescence detection
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xcellen39ECERH
C30700-100
C30700-200
C30626
C30739
C30703
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PIN-10AP
Abstract: PIN-10D osd15-5t OSD5-5T PIN-040A BPX65R PIN-10DI UV-100 PIN-10DP UV-020
Text: UV Enhanced Series Inversion Layers and Planar Diffused Silicon Photodiodes OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the
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OSD35-LR-A
OSD35-LR-D
PIN-RD07
PIN-RD15
UV-35P
UV-005DC
UV-035DC
UV-100DC
UV-005EC
UV-035EC
PIN-10AP
PIN-10D
osd15-5t
OSD5-5T
PIN-040A
BPX65R
PIN-10DI
UV-100
PIN-10DP
UV-020
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udt UV100
Abstract: UV-35 UV-20 UDT UDT BNC UV UDT UV-005 UV-005 UV-015 UV-100 UV-100L UV-50
Text: UV Enhanced Series Inversion Layers and Planar Diffused Silicon Photodiodes UDT Sensors offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the
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PIN-10AP
Abstract: PIN-10DP PIN-10D UV-005EQ PIN-5DI BPX65 high sensitive XUV-020 UV-005DC UV-013D UV-013E
Text: UV Enhanced Series Inversion Layers and Planar Diffused Silicon Photodiodes OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the
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diffuFIL-UV100
FIL-UV005
FIL-UV20
FIL-UV50
FIL-UV100
PIN-10AP
PIN-10DP
PIN-10D
UV-005EQ
PIN-5DI
BPX65 high sensitive
XUV-020
UV-005DC
UV-013D
UV-013E
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FIL-UV50
Abstract: FIL-UV100 PIN-10D XUV-005 UV-100 UV-100L PIN-5D PIN-5DPI UV-035DQC PIN-10AP
Text: UV Enhanced Series Inversion Layers and Planar Diffused Silicon Photodiodes OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the
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diffuFIL-UV100
FIL-UV005
FIL-UV20
FIL-UV50
FIL-UV100
FIL-UV50
FIL-UV100
PIN-10D
XUV-005
UV-100
UV-100L
PIN-5D
PIN-5DPI
UV-035DQC
PIN-10AP
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Charge Sensitive Preamplifier Specifications Mode
Abstract: Photodiode and amplifier IC for CD far uv photodiode photodiode chip silicon opa637 UDT Sensors
Text: Soft X-Ray, Deep UV Enhanced Series Inversion Layer Silicon Photodiodes UDT Sensors’ 1990 R&D 100 award winning X-UV detector series are a unique class of silicon photodiodes designed for additional sensitivity in the X-Ray region of the electromagnetic spectrum without use of any
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Untitled
Abstract: No abstract text available
Text: Si photodiodes S1336 series UV to near IR for precision photometry Features Applications High sensitivity in UV range Analytical instruments Low capacitance Optical measurement equipment High reliability Structure / Absolute maximum ratings Type no. Dimensional
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S1336
S1336-18BQ
S1336-18BK
S1336-5BQ
S1336-5BK
S1336-44BQ
S1336-44BK
S1336-8BQ
S1336-8BK
KSPD1022E07
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photosensitive
Abstract: S1336-8BK S1336-5BQ
Text: Si photodiodes S1336 series UV to near IR for precision photometry Features Applications High sensitivity in UV range Analytical instruments Low capacitance Optical measurement equipment High reliability Structure / Absolute maximum ratings Type no. S1336-18BQ
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S1336
S1336-18BQ
S1336-18BK
S1336-5BQ
S1336-5BK
S1336-44BQ
S1336-44BK
S1336-8BQ
S1336-8BK
KSPD1022E06
photosensitive
S1336-8BK
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S1226-8BK
Abstract: No abstract text available
Text: Si photodiodes S1226 series For UV to visible, precision photometry; suppressed near IR sensitivity Features Applications Suppressed near IR sensitivity Analytical equipment High sensitivity in UV region quartz glass type Optical measurement equipment, etc.
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S1226
S1226-18BQ
S1226-18BK
S1226-5BQ
S1226-5BK
S1226-44BQ
S1226-44BK
S1226-8BQ
S1226-8BK
KSPD1034E08
S1226-8BK
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S1227-33BR
Abstract: No abstract text available
Text: Si photodiodes S1227 series For UV to visible, precision photometry; suppressed IR sensitivity Features Applications High UV sensitivity quartz window type : QE 75 % (λ=200 nm) Analytical equipment Suppressed IR sensitivity Optical measurement equipment, etc.
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S1227
S1227-16BQ
S1227-16BR
S1227-33BQ
S1227-33BR
S1227-66BQ
S1227-66BR
S1227-1010BQ
S1227-1010BR
KSPD1036E06
S1227-33BR
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Untitled
Abstract: No abstract text available
Text: Si photodiodes S1227 series For UV to visible, precision photometry; suppressed IR sensitivity Features Applications High UV sensitivity quartz window type : QE 75 % (λ=200 nm) Analytical equipment Suppressed IR sensitivity Optical measurement equipment, etc.
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S1227
S1227-16BQ
S1227-16BR
S1227-33BQ
S1227-33BR
S1227-66BQ
S1227-66BR
S1227-1010BQ
S1227-1010BR
KSPD1036E06
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Untitled
Abstract: No abstract text available
Text: Si PHOTODIODES WITH PREAMP S6204-01, S6204-03 Thermoelectrically cooled, large-area photodiodes FEATURES l Silicon photodiode for high precision photometry in UV to near infrared l Hermetically sealed metal package S6204-01: Sapphire window S6204-03: Plastic lens
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S6204-01,
S6204-03
S6204-01:
S6204-03:
S6204-01/S6204-03
KSPDA0079EA
KSPDA0088EB
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S1226-44BK
Abstract: S1226-18BK
Text: Si photodiodes S1226 series For UV to visible, precision photometry; suppressed near IR sensitivity Features Applications High UV sensitivity: QE=75 % λ=200 nm Analytical equipment Suppressed near IR sensitivity Optical measurement equipment, etc. Low dark current
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S1226
KSPD1034E07
S1226-44BK
S1226-18BK
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Untitled
Abstract: No abstract text available
Text: Si photodiodes S1337 series For UV to IR, precision photometry Features Applications High UV sensitivity: QE 75% λ=200 nm Analytical equipment Low capacitance Optical measurement equipment Structure / Absolute maximum ratings Type No. S1337-16BQ S1337-16BR
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S1337
S1337-16BQ
S1337-16BR
S1337-33BQ
S1337-33BR
S1337-66BQ
S1337-66BR
S1337-1010BQ
S1337-1010BR
S1337-21
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Untitled
Abstract: No abstract text available
Text: Si photodiodes S1227 series For UV to visible, precision photometry; suppressed I R sensitivity Features Applications High UV sensitivity quartz window type : QE 75 % (λ= 200 nm) Analytical equipment Suppressed I R sensitivity Optical measurement equipment, etc.
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S1227
S1227-16BQ
S1227-16BR
S1227-33BQ
S1227-33BR
S1227-66BQ
S1227-66BR
S1227-1010BQ
S1227-1010BR
KSPD1036E06
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C1103-02
Abstract: m5920 m59203 S3477-03
Text: THERMOELECTRICALLY-COOLED SILICON PHOTODIODES S2592, S3477 SERIES HAM AM ATSU TECHNICAL DATA For low-light-level detection from UV to near IR. Highly stable operation. Hamamatsu offers therm oelectrical ly-cooled silicon photodiodes with a wide sensitivity range from UV to
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S2592,
S3477
S2592
C1103-02)
A3179
S-164-40
JUN/88
CR-2000
C1103-02
m5920
m59203
S3477-03
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