G1qr
Abstract: s4751 ir remote power meter cash drawer colorimeter
Text: Selection Guide Features Spectral R esponse Range nm 200 400 600 800 10 00 M ajor Applications Ty p e No. Listed P age S 1 3 3 6 .S 1 3 3 7 Series 14, 15 S 1 2 2 6 ,S 1 227 Series 16, 17 18, 19 1200 Silicon Photodiodes 190 1100 190 U V to IR range, for precision photometry
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S2381
G1qr
s4751
ir remote power meter
cash drawer
colorimeter
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near IR photodiodes
Abstract: S8745-01 S8558
Text: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5
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KSPD0001E09
near IR photodiodes
S8745-01
S8558
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Photodiode, TO-5,
Abstract: ALCAN S1406-06 S1406-03 340nm Borosilicate S1226 1M12 S1336 hamamatsu PIN TO5
Text: SILICON PHOTODIODES WITH BUILT-IN OP AMP S1406 SERIES HAMAMATSU T E C H N IC A L D A T A FEATURES • Uses UV enhanced s ilic o n p h o to d io d e s S1226, S1336 series • FET in p u t o p e ra tio n a l a m p lifie r ( I b = 30pA) • H erm etica lly sealed in th e TO-5 package
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S1406
S1226,
S1336
S1406-03/05
S1406-04/06
340nm,
HPF262082F
S-194
JAN/94
Photodiode, TO-5,
ALCAN
S1406-06
S1406-03
340nm
Borosilicate
S1226
1M12
hamamatsu PIN TO5
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C30902EH
Abstract: No abstract text available
Text: Silicon Avalanche Photodiodes C30902 Series High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview Features and Benefits Excelitas’ C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This
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C30902
C30902EH
C30921EH
DTS0408
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C30902EH
Abstract: C30902SH-DTC PerkinElmer Avalanche Photodiode geiger apd avalanche photodiodes geiger C30902 APD, laser, range, finder avalanche photodiode ghz C30921EH
Text: High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview PerkinElmer’s C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as
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C30902EH
C30921EH
DTS0408
C30902SH-DTC
PerkinElmer Avalanche Photodiode
geiger apd
avalanche photodiodes
geiger
C30902
APD, laser, range, finder
avalanche photodiode ghz
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laser range finder schematics
Abstract: BPW34 application note "laser range finder" 254 nm uv LED SPOT-9DMI APPLICATION NOTE BpW34 far uv photodiode UDT sensors BPX65 PIN-10AP
Text: TABLE OF CONTENTS Revision 98.3 Index and Selection Guide Photodiode Characteristics and Applications Application Notes and Further Reading Sources Standard Photodiodes, Electro-Optical Specifications and Design Notes Planar Diffused Photodiodes Photoconductive Series
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S5590
Abstract: No abstract text available
Text: 4 2 2 clfc.Qcl 0 0 Q 4 5R S Q77 Si PHOTODIODES WITH PRE-AMP S5590, S5591 SU Photodiode and Pre-amp integrated with feedback resistance and capacitance FEATURES • UV to near IR silicon photodiode optimized for pre cision photometry • Compact package with quartz window
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S5590,
S5591
S5590:
S5591:
S5590
S5591
S-164
KSPD1005E04
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Untitled
Abstract: No abstract text available
Text: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.
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SAE230NS
SAE500NS
SAE230NX
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Untitled
Abstract: No abstract text available
Text: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.
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SAE230NS
SAE500NS
SAE230NX
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avalanche photodiode bias
Abstract: No abstract text available
Text: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.
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SAE230NS
SAE500NS
SAE230NX
avalanche photodiode bias
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555D
Abstract: colorimeter uv photodiode for 254nm UDT model UDT-455 UDT-451 UDT-555d UDT-5550 UDT-555UV UDT Sensors
Text: 0 D T SEN SOR S INC 4TE D • 15 37 11 5 0 G G 1 57 5 DIM ■ UDTS T'^/'£7 PHOTOPS SERIES Hybrid Photodetector/Am plifier C o m b in a tio n s LOW-NOISE DETECTORS. UDT photodiodes em ploy state-of-the-art technology to provide rugged detectors with high-speed and low-noise for
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0001P72
UDT-451
UDT-020D,
UDT-020UV
UDT-451
UDT-455,
UDT-455HS,
UDT-455UHS,
UDT-455UV,
UDT-455UV/LN
555D
colorimeter
uv photodiode for 254nm
UDT model
UDT-455
UDT-555d
UDT-5550
UDT-555UV
UDT Sensors
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Untitled
Abstract: No abstract text available
Text: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.
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SAE230NS
SAE500NS
SAE23
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Untitled
Abstract: No abstract text available
Text: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.
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SAE230NS
SAE500NS
SAE23
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SAE500NX
Abstract: SAE230NS avalanche photodiode noise factor 0E-07 SAE230NX m8 smd rise time avalanche photodiode
Text: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.
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SAE230NS
SAE500NS
SAE230NX
SAE500NX
avalanche photodiode noise factor
0E-07
m8 smd
rise time avalanche photodiode
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C1383 NPN transistor collector base and emitter
Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,
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10-foot
C1383 NPN transistor collector base and emitter
NPN transistor c1383
C1383 transistor
C1383 NPN transistor
Light-Dependent Resistor specification
c1983 transistor
pin configuration of C1383 transistor
LHI968
lhi878
c1383
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led interface with 2803A
Abstract: 2803A Ortel
Text: OC-3/STIVI-1 Digital Receiver Module niuin Model # 2803A T he 2803A Digital Receiver module is designed for Features: • Signal Detect Status use in transmission systems of medium to high ECL o r PECL speed data com m unication applications. The receiver
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03A-A
led interface with 2803A
2803A
Ortel
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BPW34 osram
Abstract: wi41g BPW34 application note
Text: VSMY1850X01 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • AEC-Q101 qualified • Peak wavelength: p = 850 nm
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VSMY1850X01
AEC-Q101
J-STD-020
2002/95/EC
2002/96/EC
VSMY1850X01
2002/95/EC.
2011/65/EU.
JS709A
BPW34 osram
wi41g
BPW34 application note
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pin configuration bpw34
Abstract: APPLICATION NOTE BpW34 BPW34 smd Application lux meter BPW41 remote control VSMY2850
Text: VSMY2850RG, VSMY2850G www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology VSMY2850RG FEATURES VSMY2850G • Package type: surface mount • Package form: GW, RGW • Dimensions L x W x H in mm : 2.3 x 2.3 x 2.8
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VSMY2850RG,
VSMY2850G
VSMY2850RG
VEMD2500X01
J-STD-020
VSMY2850
2002/95/EC.
2002/95/EC
2011/65/EU.
pin configuration bpw34
APPLICATION NOTE BpW34
BPW34 smd
Application lux meter
BPW41 remote control
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C9750
Abstract: C10990 S11059-78HT S11154-01CT S10604
Text: NEWS 01 2009 SYSTEMS PRODUCTS PAGE 68 ORCA camera line-up SOLID STATE PRODUCTS Mini-spectrometer C10988MA PAGE 33 ELECTRON TUBE PRODUCTS Lightningcure LC-L2 PAGE 50 SYSTEMS PRODUCTS New Streakscope C10627 PAGE 59 Highlights SOLID STATE PRODUCTS ELECTRON TUBE PRODUCTS
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C10988MA
C10627
D-82211
DE128228814
C9750
C10990
S11059-78HT
S11154-01CT
S10604
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C30902SH-DTC
Abstract: C30902EH PerkinElmer Avalanche Photodiode APD, laser, range, finder C30902 geiger apd C30902SH PerkinElmer mode a C3092SH-TC PerkinElmer trigger mode
Text: Introduction PerkinElmer Type C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths. The responsivity of the
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C30902EH
C30921EH
C30902SH-DTC
PerkinElmer Avalanche Photodiode
APD, laser, range, finder
C30902
geiger apd
C30902SH
PerkinElmer mode a
C3092SH-TC
PerkinElmer trigger mode
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Si photodiode
Abstract: No abstract text available
Text: Si photodiodes CHAPTER 02 1 Si photodiodes 1-1 Operating principle 1-2 Equivalent circuit 1-3 Current vs. voltage characteristics 1-4 Linearity 1-5 Spectral response 1-6 Noise characteristics 1-7 Sensitivity uniformity 1-8 Response speed 1-9 Connection to an op amp
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KPSDC0088EA
KPSDC0089EA
Si photodiode
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Untitled
Abstract: No abstract text available
Text: E G & G/CANADA/OPTOELEK I t C i l • IO Optics 303DtilD DDOOlQ'ì TÔH « C A N A “p - Y / - * ' 3 Photodiode C30843 C30844, C30845, C30846 DATA S H EET Quadrant N-Type Silicon p-i-n Photodetectors ■ Broad Range of Photosensitive Suface Areas — 5 mm2 to 100 mm2
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303DtilD
C30843
C30844,
C30845,
C30846
coverin68
C30845
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T3D 98 diode
Abstract: T3D 67 diode
Text: IMAGE SENSOR SOLUTIONS DEVICE PERFORMANCE SPECIFICATION KODAK KAI-2020 KODAK KAI-2020M KODAK KAI-2020CM Image Sensor 1600 H x 1200 (V) Interline Transfer Progressive Scan CCD June 27, 2004 Revision 1.0 KAI-2020 Revision 1.0 • www.kodak.com/go/imagers 585-722-4385
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KAI-2020
KAI-2020M
KAI-2020CM
KAI-2020
T3D 98 diode
T3D 67 diode
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diode marking T3D 62
Abstract: Diode T3D 64
Text: IMAGE SENSOR SOLUTIONS DEVICE PERFORMANCE SPECIFICATION KODAK KAI-2020 KODAK KAI-2020M KODAK KAI-2020CM Image Sensor 1600 H x 1200 (V) Interline Transfer Progressive Scan CCD October 5, 2004 Revision 2.0 KAI-2020 Revision 2.0 www.kodak.com/go/imagers 585-722-4385
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KAI-2020
KAI-2020M
KAI-2020CM
KAI-2020
358mV
114mV
40Ke-)
diode marking T3D 62
Diode T3D 64
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