Thermistor 15k
Abstract: G-020/TE2
Text: Detector Components PIN OUT .550 .06 1 2 3 4 5 6 7 8 .375 .5 .225 .075 Dimensions in Inches The TE cooled photodiode series consists of a high performance photodiode mounted on a thermoelectric cooler, all housed in a TO-8 package. A thermistor is mounted to the TEC’s cold plate to
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Ultrafast Photodiode InGaAs
Abstract: Ultrafast Photodetectors GMbh UPD-300 vogt UPD-200 ALPHALAS Photodiodes 190-1100 nM silicon PIN ultrafast photodiode UPD-200-SD UPD-70 IR2
Text: ALPHALAS GmbH ULTRAFAST PHOTODETECTORS UPD FEATURES: - ultra high-speed operation - risetime below 40 picoseconds - wide spectral ranges - built-in biasing - long-life battery - coaxial photodiode coupling - compact design - high sensitivity APPLICATIONS:
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10-PS
UPD-200-SD
UPD-200
UPD-300
UPD-500
UPD-300
UPD-200-SP
D-37085
Ultrafast Photodiode InGaAs
Ultrafast Photodetectors GMbh
vogt
UPD-200
ALPHALAS
Photodiodes 190-1100 nM silicon PIN
ultrafast photodiode
UPD-70 IR2
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laser range finder schematics
Abstract: BPW34 application note "laser range finder" 254 nm uv LED SPOT-9DMI APPLICATION NOTE BpW34 far uv photodiode UDT sensors BPX65 PIN-10AP
Text: TABLE OF CONTENTS Revision 98.3 Index and Selection Guide Photodiode Characteristics and Applications Application Notes and Further Reading Sources Standard Photodiodes, Electro-Optical Specifications and Design Notes Planar Diffused Photodiodes Photoconductive Series
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germanium photodiode PIN
Abstract: foto transistor SFH231 photodiode germanium diode germanium germanium diode germanium diodes IR DETECTOR photodiode 1550 NEP 1800nm
Text: SFH 231 SFH 231 fmo06424 Germanium-PIN-Fotodiode Germanium PIN Photodiode Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 600 nm bis 1800 nm ● Kurze Schaltzeit typ. 9 ns
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fmo06424
Bestelln13
germanium photodiode PIN
foto transistor
SFH231
photodiode germanium
diode germanium
germanium diode
germanium diodes
IR DETECTOR
photodiode 1550 NEP
1800nm
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Untitled
Abstract: No abstract text available
Text: 6.144 Gbps Transimpedance Amplifier with Integrated Photodiode ADN3000-06 FUNCTIONAL BLOCK DIAGRAM FEATURES VCC VCC ADN3000-06 50Ω OUT+ OUT– POWER MONITOR APPLICATIONS Optical receivers up to 6.5 Gbps 6G CPRI, OBSAI, and 8G short range and LTE receivers
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ADN3000-06
ADN3000-06ed
D09537F-0-5/11
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Untitled
Abstract: No abstract text available
Text: 6.144 Gbps Transimpedance Amplifier with Integrated Photodiode ADN3000-06 FUNCTIONAL BLOCK DIAGRAM FEATURES VCC VCC ADN3000-06 50Ω OUT+ OUT– POWER MONITOR APPLICATIONS Optical receivers up to 6.5 Gbps 6G CPRI, OBSAI, and 8G short range and LTE receivers
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ADN3000-06
ADN3000-06
D09537F-0-5/11
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lidar apd model
Abstract: APD, laser, range, finder photodiode pin alpha particles APD bias gain C30902S geiger apd InGaAs apd photodiode Photodiode apd high sensitivity germanium diode equivalent PerkinElmer Avalanche Photodiode
Text: !"#$%& Avalanche Photodiodes: A User's Guide Abstract Avalanche photodiode detectors have and will continue to be used in many diverse applications such as laser range finders and photon correlation studies. This paper discusses APD structures, critical performance parameters and the excess noise factor.
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ED-13,
ED-0017/03/8,
C30902E/S,
C30921
lidar apd model
APD, laser, range, finder
photodiode pin alpha particles
APD bias gain
C30902S
geiger apd
InGaAs apd photodiode
Photodiode apd high sensitivity
germanium diode equivalent
PerkinElmer Avalanche Photodiode
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G030
Abstract: IGA-003/TE2 S-010 S-025 S-050 S-050UV M2510 K243
Text: VIS-NIR PHOTODIODE COMPONENTS EOS offers a line of Silicon, Germanium, Indium Gallium Arsenide, and Indium Gallium Arsenide Antimonide photodiodes for use in the 0.3 µm to 2.4 µm spectrum. Diodes operating at room temperature or TE cooled are offered in a variety of standard TO packages. Dewar packages for use with liquid nitrogen are also available.
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S-025/TE2
S-050
T0-18
IGA-030/TE2
IGA-020
G-030/TE2
G-020
G-020/TE2
G030
IGA-003/TE2
S-010
S-025
S-050
S-050UV
M2510
K243
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c1837
Abstract: ir photodiode amplifier near IR photodiodes low noise ir photodiode amplifier photodiode 1024 elements silicon S-2318 s2301 S23011 photodiode 256 elements silicon photodiode 512 elements
Text: HAMAMATSU CORP 11E D • 422^01 35,38 and 46 ELEMENT PHOTODIODE ARRAYS Hamamatsu offers new series of linear photodiode arrays designed for multichannel spectrophotometers. These photodiode arrays feature wide spectral response from ultraviolet to near infrared and low cross-talk between
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Q0G2545
S2311
S2312
S2313
C1837
C1837
S2280)
mm/250g
ir photodiode amplifier
near IR photodiodes
low noise ir photodiode amplifier
photodiode 1024 elements silicon
S-2318
s2301
S23011
photodiode 256 elements silicon
photodiode 512 elements
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low dark current APD
Abstract: photodiode germanium photodiode 011 APD 10ghz
Text: GERMANIUM AVALANCHE PHOTODIODE FPD13P12JX DESCRIPTION The FPD13P12JX is a germanium avalanche photodiode APD w ith a m ultim ode fiber pigtail designed fo r use in a local area network and sub scriber loop applications. The APD chip has a photosensitive area diameter
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FPD13P12JX
FPD13P12JX
100/im
low dark current APD
photodiode germanium
photodiode 011
APD 10ghz
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FPD13R12JY
Abstract: No abstract text available
Text: GERMANIUM AVALANCHE PHOTODIODE FPD13R12JY DESCRIPTION The FPD13R12JY is a germanium avalanche photodiode APD w ith a m ultim ode fiber pigrail designed fo r use in a local area network and sub scriber loop applications. It is also applicable in a high-bit-rate optical
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FPD13R12JY
FPD13R12JY
100jum
37MT75b
37MT7Sb
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germanium photodiode
Abstract: photodiode germanium Ford Aerospace a 6151 germanium diode L4521 Germanium mesa
Text: 3667320 FORD FORD AEROSP- , AEROSP. 97D AERONUTRONIC AERONUTRONIC T? 00452 DE J 3 t b 7 3 2 0 00DG452 1 GERMANIUM PHOTODIODE ^ ^ ^ ^ | F o r d Aerospace & ^^vt^pCom m unicationsGorporation L iË C T R O -O P T IC A L$DEVJC E S L4S21 DESCRIPTION The L4521 germanium photodiode is designed for use as a laser detecting device
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L4521
L4521
germanium photodiode
photodiode germanium
Ford Aerospace
a 6151
germanium diode
Germanium mesa
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germanium photodiode PIN
Abstract: pin photodiode 1550 sensitivity photodiode PIN 1300 sensitivity pin Photodiode 1300 nm Germanium power t2856
Text: SIEMENS SFH 232 GERMANIUM PIN PHOTODIODE FEATURES Maximum Ratings * Anode Marking: Tab at Package Bottom Operating and Storage Temperature Range T0P, Tstg .-40" to +80“C Reverse Voltage (VR) .15V
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH 233 GERMANIUM PIN PHOTODIODE FEATURES Maximum Ratings • Anode Marking: Projection at Package Bottom Operating and Storage Temperature Range T0P, Ts tg -4 0 “ to +80°C Reverse Voltage (VR) . 10 V
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0007fci40
--SFH233
aZ3b32b
0007fc
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FPD13R51KS
Abstract: No abstract text available
Text: DESCRIPTION The FPD13R51KS is a Germanium Avalanche Photodiode APD with a multimode fiber pigtail designed for use in optical transmission systems operating at high-bit-rates and over long distances. The 50Mm photosensitive diameter is optimized to achieve both higher
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FPD13R51KS
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photodiode array 1550 nm
Abstract: Photodiode Array 32 element
Text: ^^ E G zG JU D SO N Parallel Output Germanium Arrays 0.8 to 1.8 jam Description Applications Standard packaging and element configurations result in low cost and quick delivery for J16P Series highquality Germanium photodiode arrays. The 16-element and 32-element linear
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16-element
32-element
1550-nm
J16P-40P-S01
16E-SC
J16P-40P-500Ux1M
32E-SC
3030fc
photodiode array 1550 nm
Photodiode Array 32 element
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Untitled
Abstract: No abstract text available
Text: bDE D • flEBSbOS D04b727 DIT « S I E G SIEMENS AKT IENGESELLSCHAF SIEMENS SFH 233 GERMANIUM PIN PHOTODIODE FEATURES Maximum Ratings * Anode Marking: Projection at Package Bottom Operating and Storage Temperature Range T0P, T3Te Reverse Voltage (VR) Power Dissipation (PTO t )
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D04b727
1100ction
A23SbDS
0G4b72Ã
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quadrant detector
Abstract: detector active area size nep J16QUAD-8D6-R05M-HS
Text: J16PS Room Temperature Germanium Position Sensors j udson Figure 35-2 Example of Position Linearity • J16PS P osition S ensors A Ge position sensor consists of a single element photodiode with a quadrupole electrode geometry. These devices can provide linear X-Y beam position
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J16PS
quadrant detector
detector active area size nep
J16QUAD-8D6-R05M-HS
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH 232 GERMANIUM PIN PHOTODIODE Package Dimensions in Inches mm Anode .570(14.5) .492(12.5) 149(3.8) .138(3.5) -X - •J57(4.0j .149 (3.8) *006 (.15) Max. ~ T 0.189(4.80) 0.179(4.55) 0.100 (2.54), _L .018 (0.45) .220(5.6) .208 (5.3) .086 (2.2) ~079 (2.0) /
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33L33L
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FPD3R2
Abstract: photodiode germanium Fujitsu avalanche photodiode avalanche photodiode noise factor
Text: FPD3R2KX/LX Germanium Avalanche Photodiode FEATURES • • • • Low dark current: 0.15|j A High quantum efficiency: 75% at 1,3 jm Low Multiplied dark current: 10pA Storage & operating temperature: -40 to +85°c APPLICATIONS • High bit rate optical transmission system up to 1.0 Gbit.
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FPD13R12JT
Abstract: GL-50
Text: DESCRIPTION The FPD13R12JT is a germanium avalanche photodiode APD with a multimode fiber pigtail designed for use in optical transmission systems operating at a high-bit-rate and a long distance. It is also applicable in local area net work and subscriber loop systems. The APD chip has a photosensitive area
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FPD13R12JT
100/um
GL-50
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FPD13R51JY
Abstract: low dark current APD
Text: DESCRIPTION The FPD13R51JY is a germanium avalanche photodiode APD with a multimode fiber pigtail designed for use in a local area network and a subscriber loop application. It is also applicable in a high-bit-rate optical transmission system. The APD chip has a photosensitive area diameter of 50jum and has a
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FPD13R51JY
50jum
18/zA
374T7Sfc.
QGQ4ci70
low dark current APD
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smd 6PIN "vhz"
Abstract: SIEMENS Germanium
Text: SFH 231 SIEMENS Germanium PIN Photodiode D im ensions in in ch e s mm .291 (7.4) .259 (6.6) .571 (14.51 .492(12.5) ,208 (5.3), 197 (5.0) 0.100 Cathode 0.189(4.8) 0.181 (4.6) (2.54) J A .018(0.45) l .106 (2.7) • ' Glass Lens Chip Location FEATURES • Especially suitable for applications from 600
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GE006314
18-pln
fl535t
smd 6PIN "vhz"
SIEMENS Germanium
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Untitled
Abstract: No abstract text available
Text: bGE D • ÛEBStiGS DD4h725 24b « S I E G 7 SIEMENS AKTIENGESELLSCHAF SIEMENS SFH 232 GERMANIUM PIN PHOTODIODE Package Dimensions in Inches mm Cathode 570(14 5) 492(12 5) 149 (3 8} 138 (3 5) _ u N»_ 0 100 (2541 1 157 (4 0j .149 (3 8) Max /¡fisi I 0 189(4
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DD4h725
004b72b
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