BPW41N
Abstract: No abstract text available
Text: BPW41N Vishay Semiconductors Silicon PIN Photodiode Description BPW41N is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters
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BPW41N
BPW41N
08-Apr-05
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BPW41N IR
Abstract: BPW41N IR DATA
Text: BPW41N Vishay Semiconductors Silicon PIN Photodiode Description BPW41N is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters
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BPW41N
BPW41N
2002/95/EC
2002/96/EC
18-Jul-08
BPW41N IR
BPW41N IR DATA
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BPW41N
Abstract: No abstract text available
Text: BPW41N Vishay Semiconductors Silicon PIN Photodiode Description BPW41N is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters
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BPW41N
BPW41N
2002/95/EC
2002/96/EC
D-74025
08-Mar-05
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Untitled
Abstract: No abstract text available
Text: BPW41N VISHAY Vishay Semiconductors Silicon PIN Photodiode Description BPW41N is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters
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BPW41N
BPW41N
D-74025
29-Mar-04
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BPW41N
Abstract: bpw41
Text: BPW41N Vishay Semiconductors Silicon PIN Photodiode Description BPW41N is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters
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BPW41N
BPW41N
2002/95/EC
200ed
08-Apr-05
bpw41
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BPW41N
Abstract: BPW41N IR DATA 8409 BPW41N IR
Text: BPW41N Vishay Semiconductors Silicon PIN Photodiode Description BPW41N is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters
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BPW41N
BPW41N
D-74025
20-May-99
BPW41N IR DATA
8409
BPW41N IR
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BPW41N
Abstract: bpw41 BPW41N IR DATA bpw photodiode bpw 41
Text: TELEFUNKEN Semiconductors BPW 41 N Silicon PIN Photodiode Description BPW41N is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters
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BPW41N
D-74025
bpw41
BPW41N IR DATA
bpw photodiode
bpw 41
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BPW41N
Abstract: No abstract text available
Text: BPW41N Vishay Telefunken Silicon PIN Photodiode Description BPW41N is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters l p = 950 nm .
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BPW41N
BPW41N
D-74025
20-May-99
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BPW41N
Abstract: No abstract text available
Text: BPW41N Vishay Telefunken Silicon PIN Photodiode Description BPW41N is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters l p = 950 nm .
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BPW41N
BPW41N
D-74025
20-May-99
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Untitled
Abstract: No abstract text available
Text: BPW41N Vishay Telefunken Silicon PIN Photodiode Description BPW41N is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters l p = 950 nm .
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BPW41N
BPW41N
D-74025
20-May-99
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bpw41n
Abstract: infrared emitters and detectors data book temic BPW41N IR DATA Book Microelectronic vr 1K 950nm pin diodes radiation detector Telefunken Electronic
Text: BPW41N Silicon PIN Photodiode Description BPW41N is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters l p = 950 nm . The large active area combined with a flat case gives a
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BPW41N
BPW41N
D-74025
15-Jul-96
infrared emitters and detectors data book temic
BPW41N IR DATA
Book Microelectronic
vr 1K
950nm
pin diodes radiation detector
Telefunken Electronic
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Untitled
Abstract: No abstract text available
Text: BPW41N www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: side view • Dimensions in mm : 5 x 4 x 6.8 • Radiant sensitive area (in mm2): 7.5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm
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BPW41N
2002/95/EC
2002/96/EC
BPW41N
2002/95/EC.
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: BPW41N www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: side view • Dimensions in mm : 5 x 4 x 6.8 • Radiant sensitive area (in mm2): 7.5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm
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BPW41N
2002/95/EC
2002/96/EC
BPW41N
11-Mar-11
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BPW41N IR DATA
Abstract: No abstract text available
Text: BPW41N www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: side view • Dimensions in mm : 5 x 4 x 6.8 • Radiant sensitive area (in mm2): 7.5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm
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BPW41N
2002/95/EC
2002/96/EC
BPW41N
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
BPW41N IR DATA
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TSALxxxx
Abstract: BPW41N BPW41N IR DATA BPW41N IR
Text: BPW41N Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: side view • Dimensions in mm : 5 x 4 x 6.8 • Radiant sensitive area (in mm2): 7.5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm
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BPW41N
2002/95/EC
2002/96/EC
BPW41N
11-Mar-11
TSALxxxx
BPW41N IR DATA
BPW41N IR
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bpw41
Abstract: BPW41 circuit c5v6 ZTX500 ZTX300 photodiode BPW41 digital object counter object counter circuit BPW41C 220R
Text: Design Note 1 Issue 2 June 1995 Light Coupled Speed Measurement Using the BPW41 Photodiode R2 1.2K R3 220K R4 2.2K VR1 C4 1K 47uF VR2 + ME1 S1 220R S2 C2 BC848 C1 C5 1uF R1 220K 1uF D1 BPW41C B1 9V BC857 BC848 BC848 22uF C6 47uF D2 C3 0.01uF BZX84 C5V6 It is often necessary to measure the
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BPW41
BC848
BPW41C
BC857
BZX84
BPW41C
300/ZTX500
BPW41 circuit
c5v6
ZTX500
ZTX300
photodiode BPW41
digital object counter
object counter circuit
220R
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ZTX384
Abstract: BPW41D ultrasonic 4046 pll zpd200 low noise ir photodiode amplifier INTRODUCTION OF AUTOMATIC ROOM LIGHT CONTROL Design and construction Wave FM radio transmitter BPW41 IR DATA BPW41 circuit application 4046 self bias amplifier
Text: Application Note 3 Issue 2 November 1995 Infra-Red Remote Control and Data Transmission An Introduction to Photodiodes - Load Circuits and Applications David Bradbury Introduction The use of short range remote control and data transmission systems in both
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BPW41D
ZTX384
ultrasonic 4046 pll
zpd200
low noise ir photodiode amplifier
INTRODUCTION OF AUTOMATIC ROOM LIGHT CONTROL
Design and construction Wave FM radio transmitter
BPW41 IR DATA
BPW41 circuit application
4046 self bias amplifier
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BPW34 application note
Abstract: photodiode application luxmeter APPLICATION NOTE BpW34 BPW34 osram BPW20RF BPW21R osram phototransistor application lux meter BPW41N luxmeter detector BPW21R
Text: VISHAY Vishay Semiconductors Measurement Techniques Introduction Characteristics of optoelectronics devices given in data sheets are verified either by 100 % production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be
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14-Apr-04
BPW34 application note
photodiode application luxmeter
APPLICATION NOTE BpW34
BPW34 osram
BPW20RF
BPW21R osram
phototransistor application lux meter
BPW41N
luxmeter detector
BPW21R
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BPW34 application note
Abstract: APPLICATION NOTE BpW34 BPW34 osram BPW41N IR DATA phototransistor application lux meter photodiode application luxmeter pin configuration bpw34 BPW41N IR BPW20RF BPW21R osram
Text: Measurement Techniques Vishay Semiconductors Measurement Techniques INTRODUCTION VS = 80 V > VR max. The characteristics of optoelectronics devices given in datasheets are verified either by 100 % production tests followed by statistic evaluation or by sample tests on typical
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27-Aug-08
BPW34 application note
APPLICATION NOTE BpW34
BPW34 osram
BPW41N IR DATA
phototransistor application lux meter
photodiode application luxmeter
pin configuration bpw34
BPW41N IR
BPW20RF
BPW21R osram
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Untitled
Abstract: No abstract text available
Text: Tem ic BPW41N Semiconductors Silicon PIN Photodiode Description BPW4-1N is a high speed and high sensitive PIN photo diode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters
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BPW41N
D-74025
15-Jul-96
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IR TIL81
Abstract: TIL81 Phototransistor TIL81 2 pin phototransistor diode TIL81 TIL100 PHOTOTRANSISTOR 3 PIN bpx25 phototransistor application circuit Phototransistor bpx25 phototransistor
Text: BPW41D INFRA-RED PHOTODETECTOR The B P W 4 1 D is a large: area, silicon p.i.n. photodiode having a low junction capacitance and consequently capable of fast response times. The active chip is packaged in a plastic moulding which contains a near infra-red transmissive filter such that the device is sensitive to infra-red radiation only, and
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BPW41D
BPW41D
FPT220
FPT230
FPT320
FPT330
FPT400
FPT500
FPT530
FPT560
IR TIL81
TIL81
Phototransistor TIL81
2 pin phototransistor
diode TIL81
TIL100
PHOTOTRANSISTOR 3 PIN
bpx25 phototransistor application circuit
Phototransistor bpx25
phototransistor
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ic iR light control
Abstract: BPW41D ic for remote control for garage
Text: TS PLES'SEY SEMICOND/DISCRETE DE | 7 5 E D S 3 3 DODSQl? fc, 7220533 PLESSEY SEMICOND/DISCRETE 95D 05017 T~ HI" «S' BPW41D IN F R A -R ED PHO TO DETECTO R The BPW 41D is a large area, silicon p.i.n. photodiode having a low junction capacitance and consequently capable of fast response times. The active chip is packaged in a plastic moulding which
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BPW41D
700nm.
950nm.
ic iR light control
BPW41D
ic for remote control for garage
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Untitled
Abstract: No abstract text available
Text: Temic BPW41N S e m i c o n d u c t o r s Silicon PIN Photodiode Description B P W 4 1 N is a h ig h s p e e d an d h ig h se n s itiv e P IN p h o to d io d e in a fla t sid e v ie w p la stic p a ck a g e . T h e e p o x y p a c k a g e its e lf is an IR filter, sp ec tra lly
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BPW41N
15-Jul-96
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H0A0872-n55
Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1
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1N5722
1N5723
1N5724
1N5725
1N6264
1N6265
1N6266
2004-90xx
2600-70XX
2N5777-80
H0A0872-n55
H0A1405-1
H0A0865-L51
h0a1405
HOA708-1
HOA9
til78 phototransistor
MOC70T3
ir diode TIL38
H0A1874-12
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