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    PHOTO 4 PIN NS Search Results

    PHOTO 4 PIN NS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NR8360JP-BC-AZ Renesas Electronics Corporation φ 30 μm InGaAs Avalanche Photo Diode 14-PIN DIP Module With TEC Visit Renesas Electronics Corporation
    CS-DSDMDB09MF-010 Amphenol Cables on Demand Amphenol CS-DSDMDB09MF-010 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Female 10ft Datasheet
    CS-DSDMDB15MF-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB15MF-002.5 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Female 2.5ft Datasheet
    CS-DSDMDB15MM-025 Amphenol Cables on Demand Amphenol CS-DSDMDB15MM-025 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Male 25ft Datasheet
    CS-DSDMDB25MM-010 Amphenol Cables on Demand Amphenol CS-DSDMDB25MM-010 25-Pin (DB25) Deluxe D-Sub Cable - Copper Shielded - Male / Male 10ft Datasheet

    PHOTO 4 PIN NS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Technical Data Sheet 5mm Silicon PIN Photodiode , T-1 3/4 PD333-3C/H0/L2 Features Fast response time High photo sensitivity Small junction capacitance Pb free The product itself will remain within RoHS compliant version. Descriptions PD333-3C/H0/L2 is a high speed and high sensitive PIN photodiode


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    PD333-3C/H0/L2 PD333-3C/H0/L2 DPD-033-071 PDF

    SuperNine

    Abstract: QUADRAX TO RJ45 ADAPTER
    Text: Qwik Connect n OCTO BER 2014 n VOLUME 18 In This Issue: Advanced Performance MIL-DTL-38999 Series III Style Connectors n NUMBER 4 Cover: SpaceX Dragon Photo Credit: NASA GLENAIR QwikConnect The evolution of multi-pin electrical connectors— from 5015 to 38999


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    MIL-DTL-38999 MIL-C-5015 MIL-DTL-5015â MIL-C-5015â 1950s. SuperNine QUADRAX TO RJ45 ADAPTER PDF

    PIN photodiode 850nm

    Abstract: MID-54419 IR 850nm
    Text: T-1 3/4 PACKAGE PIN PHOTODIODE Description MID-54419 Package Dimensions The MID-54419 is a photo diode mounted in water clear Unit: mm inches end look plastic package and suitable for the variety ψ5.05 (.200 wavelength. 5.47 (.215) 7.62 (.300) 5.90 (.230)


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    MID-54419 MID-54419 40MIN. 50TYP. 00MIN. PIN photodiode 850nm IR 850nm PDF

    F1H1

    Abstract: ATR0874 QFN16L SA13 SA40 SD13 SD40 Detector "Detector IC" CD DVD 10 PIN Slim Dvd rw diagram 4972a
    Text: Features • • • • • • • • 650 nm and 780 nm Wavelengths Supported 150 MHz Data Channel Bandwidth Fast Settling Time 4 Configurable Gain Steps 12 Photo Diodes Low Offset Voltage Power-down Mode Pb-free Optical 16-pin Package Applications •


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    16-pin ATR0874 F1H1 QFN16L SA13 SA40 SD13 SD40 Detector "Detector IC" CD DVD 10 PIN Slim Dvd rw diagram 4972a PDF

    Untitled

    Abstract: No abstract text available
    Text: Qwik Connect n OCTO BER 2014 n VOLUME 18 In This Issue: Advanced Performance MIL-DTL-38999 Series III Style Connectors n NUMBER 4 Cover: SpaceX Dragon Photo Credit: NASA GLENAIR QwikConnect The evolution of multi-pin electrical connectors— from 5015 to 38999


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    MIL-DTL-38999 MIL-C-26482, MIL-C-26482 PDF

    Untitled

    Abstract: No abstract text available
    Text: VEMD6010X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount • Package form: 1206 • Dimensions L x W x H in mm : 4 x 2 x 1.05 • Radiant sensitive area (in mm2): 0.85 • High photo sensitivity • High radiant sensitivity


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    VEMD6010X01 J-STD-020 AEC-Q101 VEMD6010X01 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: VEMD5010X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount • Package form: top view • Dimensions L x W x H in mm : 5 x 4 x 0.9 • Radiant sensitive area (in mm2): 7.5 • AEC-Q101 qualified • High photo sensitivity


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    VEMD5010X01 AEC-Q101 VEMD5010X01 J-STD-020 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: VEMD6110X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount • Package form: 1206 • Dimensions L x W x H in mm : 4 x 2 x 1.05 • Radiant sensitive area (in mm2): 0.85 • High photo sensitivity • High radiant sensitivity


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    VEMD6110X01 J-STD-020 VEMD6110X01 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: PIN Photodiodes PNZ322D Dual Division Silicon PIN Photodiode Unit : mm For optical information systems 1.8±0.3 0.8±0.2 0.6±0.1 5.0±0.1 2.54±0.1 4 3 1.0±0.1 Features Fast response : tr, tf = 10 ns typ. Small plastic package and visible light cutoff resin (flat type)


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    PNZ322D PDF

    Untitled

    Abstract: No abstract text available
    Text: PIN Photodiodes PNA3202F Silicon PIN Photodiodes Unit : mm 5.3 max. 5.0±0.1 Good photo current linearity 1 1.8±0.3 Low dark current : ID = 10 nA max. 1.0 4.3 max. 4.0±0.1 Features Fast response : tr, tf = 30 ns (typ.) Wide spectral sensitivity 2 10˚


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    PNA3202F PDF

    CD laser pickup assembly

    Abstract: resistor 400ohm 950-Ohm photodiode dvd cd BS-A511RD CD Pick-Up head DVD pickup assembly SP8036 SP8036DG4 optical Pick-Up head
    Text: Solved by SP8036 TM APC Amplifier with Integrated Photodiode and Gain Adjust Capability FEATURES • • • • • • • • Dual wavelength 650nm and 780nm 13 ns Settling Time to 2% 100 MHz Bandwidth at -3dB 10 mV Output Offset Voltage o 25 µV/ C Output Offset Voltage Drift


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    SP8036 650nm 780nm SP8036 SP8036DG4 CD laser pickup assembly resistor 400ohm 950-Ohm photodiode dvd cd BS-A511RD CD Pick-Up head DVD pickup assembly SP8036DG4 optical Pick-Up head PDF

    Untitled

    Abstract: No abstract text available
    Text: PIN Photodiodes PNZ303 PIN Photodiode Unit : mm ø9.4 max. ø8.1±0.2 ø5.9±0.2 12.7 min. 3.5 max. For optical control systems Features Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns typ. High photodetection sensitivity and wide dynamic sensitivity


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    PNZ303 PDF

    antel

    Abstract: ARS-1 c2040 application notes ad9660 AD9660 AD9660KR AD9660KR-REEL ML64116R OP291 laser diode for printer
    Text: a FEATURES 1.5 ns Rise/2.0 ns Fall Times Output Current: 180 mA @ 3 V, 200 mA @ 2.5 V Bias Current: 90 mA @ 3 V Modulation Current: 60 mA @ 3 V Offset Current: 30 mA @ 3 V Single +5 V Power Supply Switching Rate: 200 MHz Onboard Light Power Control Loops APPLICATIONS


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    AD9660 AD9660 C2040 28-Pin antel ARS-1 application notes ad9660 AD9660KR AD9660KR-REEL ML64116R OP291 laser diode for printer PDF

    precap

    Abstract: No abstract text available
    Text: bEE ]> • bM27SSS 0037b53 0T3 «NECE N E C ELECTRONICS INC PHOTO DIODE / _ N D L 5 4 0 5 C 1 OOO to 1 600 nm OPTICAL FIBER COMMUNICATIONS <£80 i i m InGaAs PIN PHOTO DIODE DESCRIPTION NDL5405C is an InGaAs PIN photo diode for a light detector of long wavelength transmission systems. It covers the


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    NDL5405C precap PDF

    Untitled

    Abstract: No abstract text available
    Text: N E C ELECTRONICS INC b2E » • L.ME7S25 QQ3B0BB B1H * N E C E DATA SHEET |\|= C Z PHOTO DIODE N D L5405 ELECTRON DEVICE 1 OOO to 1 6 0 0 nm OPTICAL FIBER COMMUNICATIONS 0 8 0 ßm InGaAs PIN PHOTO DIODE D E S C R IP TIO N N D L 5 4 0 5 is an InGaAs P IN photo diode for a light detector of long wavelength transmission systems.


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    ME7S25 L5405 L5500P L5405C L5406C L5405P PDF

    4070N

    Abstract: No abstract text available
    Text: b2E D • b427525 0G37bb4 TÔT « N E C E N E C PHOTO DIODE ELECTRONICS INC / N D L5406C 1 OOO to 1 600 nm OPTICAL FIBER COMMUNICATIONS 2 7 0 X 3 3 0 jum InGaAs PIN PHOTO DIODE D E S C R IP TIO N N D L 5 4 0 6 C is a 270 nm x 3 3 0 /¿m InGaAs PIN p h o to diode fo r a lig h t detector. It covers th e wavelength range between


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    b427525 0G37bb4 L5406C 4070N PDF

    13B1

    Abstract: 20-PIN LR36685 RJ21R3BA0PT GBJ-LG TT 2222 Horizontal Output Transistor diagram TT 2222 Horizontal Output Transistor transistor tt 2222 vertical
    Text: BACK SHARP R J 2 1 R 3 B A P RJ21R3BA0PT 1/1.8-type Interline Color CCD Area Sensor with 4 200 k Pixels T DESCRIPTION • Package : The RJ21R3BA0PT is a 1/1.8-type 9.13 mm solid- 20-pin half-pitch DIP [Plastic] state image sensor that consists of PN photo­


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    J21R3BA0PT RJ21R3BA0PT RJ21R3BA0PT x-5819 13B1 20-PIN LR36685 GBJ-LG TT 2222 Horizontal Output Transistor diagram TT 2222 Horizontal Output Transistor transistor tt 2222 vertical PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LASER DIODES □□16244 7T4 PD7XX9 SERIES N°"c' . i i *1 S o n * P « 'a InGaAs PIN PHOTO DIODES TYPE NAME DESCRIPTION FEATURES P D 7 X X 9 series are InGaAs photodiode array which # has # <t> 4 0 u m active diam eter # 2 5 0 u m spacing betw een sensitive area


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    1300nm 1300nm, PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA { D I S C R E T E / OPTO} 9097250 TO S H IB A T=j D IS C R E T E /O P T O 99D DE | ^ 7 5 5 0 17352 0D173SS D T -4 I-5 3 TPS703A SILICON PIN PHOTO DIODE Unit in nrn 7.0± a z 1 High Speed Switching :tr,t£=100ns(Typ.) High Sensitivity :Isc=0-9M(Typ.)


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    0D173SS TPS703A 100ns 800nm 150ns TDT72SD 0D173S3 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC O C M O S FET PS7241-AT1, PS7241-AT5 8-PIN SOP OCMOS FET 2-ch OCMOS FET DESCRIPTION T he PS7241-AT1 and P S 7 2 4 1 -A T 5 are solid state relays c o n ta in in g a G a A s LED on the light em ittin g side (input side) and M O S FETs (+ Photo tra n sisto r) on the o u tp u t side.


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    241-A PS7241-AT1 11564EJ4V0DS00 PS7241-AT1 PS7241-AT5 500pcs/reel PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET ' O C M O S FET PS7241C-AT1 ,PS7241 C-AT5 CURRENT LIMIT TYPE 8-PIN SOP OCMOS FET 2-ch OCMOS FET DESCRIPTION T he P S 7241C -A T1 and P S 7 2 4 1 C -A T 5 are solid state relays con ta in in g a G aA s LED on the light em ittin g side (in pu t side), M O S FETs includ in g cu rre n t con tro l circuit, Photo tra n sisto r on the o u tp u t side. C u rre n t con tro l circ u it of


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    PS7241C-AT1 PS7241 7241C P13930EJ3V PDF

    c1g smd

    Abstract: bpv10nf TEMD2100
    Text: Tem ic S e m i c o n d u c t o r s Selector Guide Infrared Emitting Diodes Characteristics Package Type +/-<p 1 ¡e /m W /sr @ Ip /m A { V p /V @ Ip /m A tr , tf / ns Standard IR Emitters GaAs 950 nm in Plastic Package CQY36N ais=— = r d ] -


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    CQY36N CQY37N TSUS4300 TSUS4400 CQX48A CQX48B TSSS2600 TSUS5200 TSUS5201 TSUS5202 c1g smd bpv10nf TEMD2100 PDF

    BPW34 smd

    Abstract: bpv10nf bpw43
    Text: Tem ic S e m i c o n d u c t o r s Photo PIN Diodes Characteristics Package Photo Sensitive Area/tam2 I* !* Ira /fiA +A- @ k /u m W ns ® X = 820 om (Ee * l mW / cm2> R*. /12 (VR = Î0 V) Photo PIN Diodes in Clear Plastic Package e? BPW34 7.5 65° 50(>40)


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    BPW34 BPW46 BPW43 BPV10 BPW82* BPW83* BPV10NF BPV22NF BPV23NF* S153P BPW34 smd bpw43 PDF

    Untitled

    Abstract: No abstract text available
    Text: Panasonic PIN Photodiodes PN3405 Quad. Division Silicon PIN Photodiode Unit : mm 1.8+0.3 For optical information systems • Features • Fast response : tr, tf = 20 ns typ. V • Good photo current linearity • Low dark current : ID = 10 nA (max.) • H igh reliability


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    PN3405 2856K PDF