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    PHKD13N03LT Price and Stock

    Nexperia PHKD13N03LT,118

    MOSFET 2N-CH 30V 10.4A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PHKD13N03LT,118 Reel 10,000
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    Nexperia PHKD13N03LT,518

    MOSFET 2N-CH 30V 10.4A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PHKD13N03LT,518 Reel
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    Philips Semiconductors PHKD13N03LT

    DUAL N-CHANNEL TRENCHMOS LOGIC LEVEL FET Small Signal Field-Effect Transistor, 10.4A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA PHKD13N03LT 3,560
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    PHKD13N03LT Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PHKD13N03LT NXP Semiconductors PHKD13N03 - TRANSISTOR 10400 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, MS-012, SOP-8, FET General Purpose Small Signal Original PDF
    PHKD13N03LT Philips Semiconductors Dual TrenchMOS logic level FET Original PDF
    PHKD13N03LT,118 NXP Semiconductors PHKD13N03 - TRANSISTOR 10400 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, MS-012, SOP-8, FET General Purpose Small Signal Original PDF
    PHKD13N03LT,518 NXP Semiconductors PHKD13N03LT - Dual N-channel TrenchMOS logic level FET, SOT96-1 Package, Standard Markigg, Reel Dry Pack, SMD, 13" Original PDF
    PHKD13N03LT,518 NXP Semiconductors Dual TrenchMOS logic level FET - Configuration: Dual N-channel ; ID DC: 10.4 A; Qgd (typ): 3.9 nC; RDS(on): 33@4.5V mOhm; VDSmax: 30 V; Package: SOT96-1 (SO8); Container: Reel Dry Pack, SMD, 13" Original PDF
    PHKD13N03LT/T3 Philips Semiconductors Transistor Mosfet N-CH 30V 10.4A 8SOT-96-1 T/R Original PDF

    PHKD13N03LT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SO 8 PHKD13N03LT Dual N-channel TrenchMOS logic level FET Rev. 4 — 22 November 2011 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


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    PDF PHKD13N03LT

    PHKD13N03LT

    Abstract: No abstract text available
    Text: PHKD13N03LT Dual N-channel TrenchMOS logic level FET Rev. 03 — 27 April 2010 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


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    PDF PHKD13N03LT PHKD13N03LT

    Untitled

    Abstract: No abstract text available
    Text: SO 8 PHKD13N03LT Dual N-channel TrenchMOS logic level FET Rev. 5 — 27 December 2011 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


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    PDF PHKD13N03LT

    PHKD13N03LT

    Abstract: Philips T
    Text: PHKD13N03LT Dual TrenchMOS logic level FET M3D315 Rev. 01 — 23 June 2003 Product data 1. Product profile 1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability:


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    PDF PHKD13N03LT M3D315 PHKD13N03LT OT96-1 Philips T

    PHKD13N03LT

    Abstract: PHKD13N03LT-01
    Text: PHKD13N03LT Dual N-channel TrenchMOS logic level FET Rev. 02 — 6 March 2009 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


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    PDF PHKD13N03LT PHKD13N03LT PHKD13N03LT-01

    813LN

    Abstract: 82c495 b30 c300 - 1 RC410M APL5531-LF 20493-21 RC400MB-AGTL ati sb400 IT8712 NS0013 LF
    Text: 1 2 3 4 6 7 8 EW6 VCC_CORE CPU CORE 5 Page:26 CLOCK GEN ICS951413CGLFT A +3VPCU +3V_S5/+3VSUS +3V CELERON-M/PENTIUM-M +3VPCU +3V_S5 A Page:4 +3VSUS INTEL Mobile_479 CPU +3V Page:2, 3 +5VSUS +5VSUS/+5V +12V +5V Page:24 +12V HOST BUS 400MHZ +1.8VSUS +1.8VSUS/+1.8V


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    PDF ICS951413CGLFT 400MHZ RC410MB/RC410MD PCI1510A 158K-0402-LF 1000P/50V-LF 174K-0603-LF 7K-0402-LF 1000P/50V-LF 0R-0603-LF 813LN 82c495 b30 c300 - 1 RC410M APL5531-LF 20493-21 RC400MB-AGTL ati sb400 IT8712 NS0013 LF

    samsung 822

    Abstract: 37 TV samsung lcd Schematic circuit diagram samsung lcd tv power supply schematic schematic diagram crt tv samsung BD40 SAMSUNG TV 40 LCD SAMSUNG ELECTRONICS BA44 schematic atx 2.03 P4 37 TV samsung lcd Schematic g1003 lyon samsung
    Text: -이 기술 자산으로 승인자만이 사용할사용할 수 있습니다 이 문서는 문서는삼성전자의 삼성전자의 기술 자산으로 승인자만이 수 있습니다 - This can notnot be be used without Samsung's authorization ThisDocument


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    PDF CK-505 EMC2102 478pin samsung 822 37 TV samsung lcd Schematic circuit diagram samsung lcd tv power supply schematic schematic diagram crt tv samsung BD40 SAMSUNG TV 40 LCD SAMSUNG ELECTRONICS BA44 schematic atx 2.03 P4 37 TV samsung lcd Schematic g1003 lyon samsung

    RAS 0510 SUN HOLD

    Abstract: sun hold RAS 0510 SUN HOLD, RAS 0510 NH82801HBM bd3 c531 diode schematic diagram hdmi to rca le88clpm U519-1 20B3 diode schematic diagram crt tv samsung
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D GENEVA CPU : Chip Set : Remarks :


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    PDF BA41-XXXXX SheP18050 TP18051 TP18052 TP18164 TP18170 TP18172 TP18178 TP18183 TP18187 RAS 0510 SUN HOLD sun hold RAS 0510 SUN HOLD, RAS 0510 NH82801HBM bd3 c531 diode schematic diagram hdmi to rca le88clpm U519-1 20B3 diode schematic diagram crt tv samsung

    Marvell 88E8055

    Abstract: keyboard and touchpad schematic CIS10J270NC p23 343 B530 Socket AM2 intel g41 ich9 88E8040 SAMSUNG ELECTRONICS BA41
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D XI’AN-MV CPU :INTEL MEROM/PENRYN


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    PDF BA41-00926A/00927A Alc262 Sheet45 Sheet46 Isl6256a Sheet47 Sheet48 Sheet49 Isl6266a Marvell 88E8055 keyboard and touchpad schematic CIS10J270NC p23 343 B530 Socket AM2 intel g41 ich9 88E8040 SAMSUNG ELECTRONICS BA41

    alviso-GM

    Abstract: TPA056 c420d quanta PC97551 AO3408 915GM pc1037 MAX1907 Socket AM2
    Text: 1 2 3 4 5 6 7 8 Voltage Rails A PWR_SRC Primary DC system power supply +3VSUS 3.3V switched power rail off in S4-S5 +3V 3.3V switched power rail ( off in S3-S5 ) 3VPCU 3V always on power rail +3V_S5 3.3V switched power rail ( off in S5-S5 ) +1.8VSUS +1.8V switched power rail ( off in S4-S5 )


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    PDF CORE-MAX1907EEI alviso-GM TPA056 c420d quanta PC97551 AO3408 915GM pc1037 MAX1907 Socket AM2

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Text: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


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    PDF DFN1006D-2 OD882D) DFN1010D-3 OT1215) DFN2020MD-6 OT1220) DFN1608D-2 OD1608) DSN0603 OD962) circuit diagram wireless spy camera PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143

    PHD78NQ

    Abstract: BUK9507-30B BUK7608-40B PHB27NQ10T PHP18NQ10T ph43 PHD66NQ03LT BUK9575-100A PHP45NQ10TA si2302ds
    Text: Power MOSFET Selection Guide 2009 Smaller, faster, cooler Table of contents 12 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 4


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    PDF

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


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    PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    PSMN015-60PS

    Abstract: BUK9507-30B Power MOSFET Selection Guide BSS123 NXP BSH103 BSS84 / BSH201 2N7002CK BSH108 BUK7535-55A PMN38EN
    Text: Power MOSFET Selection Guide 2010 Smaller, faster, cooler 2 Table of contents 12 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 4


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    PDF OT404) PHB66NQ03LT OT428) PHD38N02LT PH2520U OT163 PSMN015-60PS BUK9507-30B Power MOSFET Selection Guide BSS123 NXP BSH103 BSS84 / BSH201 2N7002CK BSH108 BUK7535-55A PMN38EN

    BUK2114

    Abstract: BUK2114-50SYTS saa7117 SAA7136E MPSA92 168 saa7136 buk2914-50syts TDA8920BTH bu4508dx KMZ52
    Text: Index Type number Page number 1N4148 34 1N4531 34 1N47xxA series 44 1PS10SB62 32 1PS10SB63 32 1PS10SB82 32 1PS181 36 1PS184 36 1PS193 34 1PS226 36 1PS59SB10 28 1PS59SB14 28 1PS59SB15 28 1PS59SB16 28 1PS59SB20 30 1PS59SB21 28 1PS66SB17 32 1PS66SB62 32 1PS66SB63


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    PDF 1N4148 1N4531 1N47xxA 1PS10SB62 1PS10SB63 1PS10SB82 1PS181 1PS184 1PS193 1PS226 BUK2114 BUK2114-50SYTS saa7117 SAA7136E MPSA92 168 saa7136 buk2914-50syts TDA8920BTH bu4508dx KMZ52

    C547 c

    Abstract: BA41-00811A BA41-00791A R7790 Samsung Praha SRI Rev 1_0 keyboard and touchpad schematic ap4435gm Socket AM2 smd diode code F45 21Ring
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED 4 BY SAMSUNG. D Table of Contents Sheet 1. COVER Sheet 2-6. DIAGRAM Block/Power & ANNOTATIONS


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    PDF BA41-00791A BA41-00792A BA41-00811A 800MHz) RS600ME SB600 0033nF 018nF 022nF 027nF C547 c R7790 Samsung Praha SRI Rev 1_0 keyboard and touchpad schematic ap4435gm Socket AM2 smd diode code F45 21Ring

    24c02 wp

    Abstract: 24C02WP ST 1803 DHI ST 24C02wp CN17-3 L5920 24C02W quanta via6307 10K0402
    Text: 1 2 3 4 5 6 7 8 Voltage Rails PWR_SRC A Primary DC system power supply 3VSUS 3.3V switched power rail off in S4-S5 +3V 3.3V switched power rail ( off in S3-S5 ) 3VPCU 3V always on power rail 3V_S5 3.3V switched power rail ( off in S5-S5 ) 5VSUS 5V switched power rail ( off in S4-S5 )


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    PDF 1907VCC 1907REF 1907REF 1907B1 PR103 11K/F PR102 24c02 wp 24C02WP ST 1803 DHI ST 24C02wp CN17-3 L5920 24C02W quanta via6307 10K0402

    KBC3910

    Abstract: max1907a LMv3211 r305 finger print module GS1117Y VSS159 sr96 P2231 elitegroup computer W83L528
    Text: A B C D C.0 2005/ 12/21 C.0 2005/ 12/21 Rev. Data 5 22 2005/ 12/21 C.0 23 Data 21 C.0 2005/ 12/21 C.0 2005/ 12/21 C.0 2005/ 12/21 Rev. Page 03 02 01 19 2005/ 12/21 C.0 24 2005/ 12/21 C.0 04 AC'97 2005/ 12/21 C.0 25 2005/ 12/21 C.0 05 13 STICK 23 23 IDE 400 MHZ DDR2


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    PDF 15-R01-011000 479Micro-FCPGA) 400MHZ 915GMS lec217d91-v8 holec217d91-v8 holec237d91 KBC3910 max1907a LMv3211 r305 finger print module GS1117Y VSS159 sr96 P2231 elitegroup computer W83L528

    32 inch TV samsung lcd Schematic

    Abstract: BA41-00866A 8C445 PCIe_MiniCard_Slot Socket AM2 ich9 baa0 mx25l8005m2c-15g oslo2 FPC 60p
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D OSLO2 C B Model Name : Oslo2_DDR3 PBA Name : MAIN


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    PDF BA41-00866A BA41-00867A Sheet62 Sheet63 Sheet64 Sheet65 Sheet66 Isl6256a Sheet67 Sheet68 32 inch TV samsung lcd Schematic 8C445 PCIe_MiniCard_Slot Socket AM2 ich9 baa0 mx25l8005m2c-15g oslo2 FPC 60p

    C571

    Abstract: quanta Z0301 LM393 lm3931 PC97551 lm3932 LM393-1 LM393-2 quanta BL
    Text: 5 4 3 2 1 Model MODEL REV 2A CHANGE LIST Page FIRST RELEASE REFERENCE E200404-2902 ZA1 D MAIN BOARD 2B REFERENCE E200405-2336 3A REFERENCE E200406-0189 3B REFERENCE E200406-2534 ZA1 M/B FROM 1 2A 2 3A 3 2A 4 2A 5 2A 6 2A 7 3A 8 3A 9 2A TO 3B D 10 2A 11 2A


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    PDF E200404-2902 E200405-2336 E200406-0189 E200406-2534 31ZA1MB0036 150U/4V-3528 PR161 150U/4V-3528 100K/F 1U/10V C571 quanta Z0301 LM393 lm3931 PC97551 lm3932 LM393-1 LM393-2 quanta BL

    TP2788

    Abstract: TP2801 l xd 402 HAINAN3 mx25l8005m2c-15g NH82801HBM timer 8254 circuit LE88CLPM SI2315BDS-T1 20b1 diode
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents 1. COVER 2-7. DIAGRAM & ANNOTATION


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    PDF BA41-00844A BA41-00845A TP2074 TP2075 TP2076 TP2077 TP2735 TP2736 TP2737 TP2754 TP2788 TP2801 l xd 402 HAINAN3 mx25l8005m2c-15g NH82801HBM timer 8254 circuit LE88CLPM SI2315BDS-T1 20b1 diode

    BA41-00791A

    Abstract: D51233 218S6ECLA21FG BA41-00811A R7790 AP680AGM Samsung Praha SRI Rev 1_0 HDR-10P-1R-SMD 88E8039 RS600ME
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED 4 BY SAMSUNG. D Table of Contents Sheet 1. COVER Sheet 2-6. DIAGRAM Block/Power & ANNOTATIONS


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    PDF 800MHz) RS600ME SB600 BA41-00791A BA41-00792A BA41-00811A 022nF 027nF 047nF 0033nF D51233 218S6ECLA21FG R7790 AP680AGM Samsung Praha SRI Rev 1_0 HDR-10P-1R-SMD 88E8039 RS600ME

    BUT11ApX equivalent

    Abstract: PH4030AL philips uhp lamp driver power supply circuit diagram using ic tea1530 BT136 testing power management selection guide BU4508DX equivalent 2n7002 12w nxp BSN304 equivalent bu2508af equivalent
    Text: Power Management selection guide 2008 Leading the power efficient connected world Table of contents Power MOSFETs 4 Automotive MOSFETs 16 Power Bipolar Transistors 20 Complex Discretes 22 Small-signal bipolar transistors 28 SCR's Triacs and Trigger Devices


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    PDF

    BUK2114

    Abstract: IRF540 n-channel MOSFET BATTERY CHARGER SMPS CIRCUIT DIAGRAM tea1506p tea1507 TEA1620 BUK2914-50SYTS BUK2114-50SYTS BU4508DX equivalent BU4522AX BUK2914
    Text: Power Management Power Management 189 Automotive MOSFETs General Purpose Automotive GPA TrenchMOS types in bold red represent new products 190 VDS RDS(ON) @VGS ID (max) SC73 (SOT223) (V) (mΩ) (V) 30 30 5 5 10 5 @ 25°C (A) 75 75 30 13 10 55 BUK6213-30A


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    PDF OT223) BUK6213-30A BUK9213-30A BUK7604-40A BUK9604-40A OT404) OT428) BUK7605-30A BUK9605-30A OT226 BUK2114 IRF540 n-channel MOSFET BATTERY CHARGER SMPS CIRCUIT DIAGRAM tea1506p tea1507 TEA1620 BUK2914-50SYTS BUK2114-50SYTS BU4508DX equivalent BU4522AX BUK2914