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    Texas Instruments DOLPHIN-HP-EVM

    KIT EVAL DOLPHIN HI-POWER
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    DigiKey DOLPHIN-HP-EVM Bulk 1
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    Texas Instruments TMDSHV1PHINVKIT

    EVAL BOARD FOR F28M35
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    Texas Instruments DOLPHIN-HP-ADDER

    HGH PWR BOARD FOR DOLPH EVAL MOD
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    DigiKey DOLPHIN-HP-ADDER Bulk 1
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    Texas Instruments DOLPHIN-LP-ADDER

    KIT ADDER FOR DOLPHIN EVM LP/HP
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    DigiKey DOLPHIN-LP-ADDER Box 1
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    pico Technology TA006 Dolphin Clip - red

    Test Clips Dolphin Clip - red
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    Mouser Electronics TA006 Dolphin Clip - red 95
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    PHIN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor cq 529

    Abstract: BLV94 sot-171 transistor zx series
    Text: PHILIPS IN T E RN AT ION AL bSE D m 711GÛ5b 0Db3052 Jl 3T1 • PHIN BLV94 UHF P O W ER T R A N SIST O R NPN silicon planar epitaxial transistor prim arily intended fo r common base, class-B operation in mobile radio transmitters fo r the 900 MHz comm unication band.


    OCR Scan     		BLV94 711DfiEb 00b3Dbà transistor cq 529 BLV94 sot-171 transistor zx series PDF

    RXB12350Y

    Abstract: No abstract text available
    Text: ^ M AINTENANC E TYPE 5bE D PHILIPS INTERNATIONAL 3 3 -/3 RXB12350Y TllQflEb DDMbSMb 575 PHIN PULSED MICROWAVE POWER TRANSISTOR NPN silicon power transistor fo r use in a common-base, class-C narrowband am plifier in avionics applications. It operates in pulsed conditions only and is recommended fo r IFF applications.


    OCR Scan     		RXB12350Y 0DMb54b FO-91. t-33-13 RXB12350Y PDF

    P112

    Abstract: TIP111 darlington npn tip 102 TIP110 TIP112 TIP115 TIP116
    Text: TIP110 TIP111 TIP112 PHILIPS INTERNATIONAL SbE D • 711002b 0043550 224 ■ PHIN T -3 3 -Z SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in m onolithic Darlington circu it fo r audio o u tp u t stages and general purpose am plifier and switching applications. T 0-220A B plastic envelope. P-N-P complements are


    OCR Scan     		TIP110 TIP111 711002b T-33-Z T0-220AB TIP115, TIP116 TIP111 TIP112 P112 darlington npn tip 102 TIP112 TIP115 PDF

    bgjg

    Abstract: transistor T philips 2322 733 BLF542 UFU370 3a0c 2222 030 capacitor philips philips potentiometer 43t transistor 3909
    Text: Philips Semiconductors_ Product specification UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • • T " 3 <î?~0 cÎBLF542 5tiE D • 711DflSb 0D43TS4 5T3 ■ PHIN PIN CONFIGURATION High power gain Easy power control


    OCR Scan     		-0ciBLF542 0D43TS4 OT171 PINNING-SOT171 MBA931 MRA971 bgjg transistor T philips 2322 733 BLF542 UFU370 3a0c 2222 030 capacitor philips philips potentiometer 43t transistor 3909 PDF

    BUK542

    Abstract: BUK542-100A BUK542-100B
    Text: PHILIPS INTERNATIONAL bSE ]> • 711QSSb ODbmfll Tbfl ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK542-100A/B Logic level GENERAL DESCRIPTION PINNING -SO T186 PIN SYMBOL


    OCR Scan     		711QSSb BUK542-100A/B -SOT186 BUK542 -100A -100B BUK542-100A BUK542-100B PDF

    BT153

    Abstract: TAG thyristor Thyristor TAG thyristor TAG 13 BT153 fast turn off philips thyristor 239 thyristor TRIGGER PULSE TRANSFORMER 7Z82062
    Text: PHILIPS INTERNATIONAL SflE J> 7110fl2t, 0053035 301 • PHIN B l iby _y F A S T TURN-OFF TH YR IS TO R Glass-passivated fast-turn-off thyristor in a T 0 -2 2 0 A B envelope, intended fo r use in inverter, pulse and switching applications. Its characteristics make the device extremely suitable for use in regulator,


    OCR Scan     		7110fl2t, T0-220AB T0-220AB. BT153 TAG thyristor Thyristor TAG thyristor TAG 13 BT153 fast turn off philips thyristor 239 thyristor TRIGGER PULSE TRANSFORMER 7Z82062 PDF

    as6 diode

    Abstract: BYX96-300 diode as6 BYX96 BYX96-300R BYX96-300U
    Text: BYX96 SERIES PHILIPS INTERNATIONAL SbE D • 7110ÔEb OD41bSS 1T3 ■ PHIN T ~ 0 - n RECTIFIER DIODES A ls o availab le to B S 9 3 3 1 - F 1 2 9 S ilic o n re ctifie r dio d es in m etal envelopes sim ila r to D O -4 , intended fo r use in p o w er rectifier


    OCR Scan     		BYX96 BS9331-F129 BYX96-300 BYX96-300R 1600R. i-oi-19 7110fl2b as6 diode diode as6 BYX96-300U PDF

    BD201F

    Abstract: BDX77F BD203F BD202F BD204F BDX78F
    Text: J PHILIPS INTERNATIONAL SbE D • BD201F; BD203F; BDX77F 7110a2b 0Gl+2ÛDfi Ô4S ■ PHIN T - 3 3 ' O cf SILICON EPITAXIAL POWER TRANSISTORS NPN Silicon power transistors in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements are B D 202F, BD204F and B D X 78F .


    OCR Scan     		BD201F; BD203F; BDX77F 7110a2b T-33-0 OT186 BD202F, BD204F BDX78F. BD201F BDX77F BD203F BD202F BDX78F PDF

    SOT123 Package

    Abstract: SOT123 BLF244 International Power Sources SOT-123
    Text: Philips Semiconductors Product specification VHF power MOS transistor BLF244 FEATURES • • • • • • 7110ÖEb 0Ü437T5 SMS • PHIN SbE D PHILIPS INTERNATIONAL T-J *?-11 PIN CONFIGURATION High power gain Low noise figure Easy power control Good thermal stability


    OCR Scan     		BLF244 711002b OT123 7110fi5b T-39-11 SOT123 Package SOT123 BLF244 International Power Sources SOT-123 PDF

    fet MARKING MHp

    Abstract: sot143 code marking MS FET marking code marking ANs marking L1 fet BF996S
    Text: BF996S PHILIPS INTERNATIONAL 5 bE D 711002b D 0 3 l+D7û ÖTß • PHIN F O R D E T A IL E D IN F O R M A T IO N SEE T H E L A T E S T ISSUE OF H A N D B O O K SC07 O R D A T A S H E E T T - 35-27 SILICON N-CHANNEL DUAL GATE MOS-FET D e pletion ty p e fie ld -e ffe c t tra n sisto r in a plastic SO T143 m icro m in ia tu re envelope w ith source and


    OCR Scan     		BF996S OT143 OT143. fet MARKING MHp sot143 code marking MS FET marking code marking ANs marking L1 fet BF996S PDF

    hFE-200 to-92 npn

    Abstract: 2N4123 2N4124 2N4125 2N4126
    Text: 2N4123 _ 9N4194_ PHILIPS INTERNATIONAL SbE D • 711002b D042bb2 T3T ■ PHIN -= I SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in pla stic T O -9 2 envelopes, p rim a rily intended fo r low -pow er, sm all-signal a u d io ­ fre qu e n cy a p p lica tio n s fo r consum er service.


    OCR Scan     		2N4123 711Dfl2t D042bb2 2N4125 2N4126. 2N4123 2N4124 100juA; hFE-200 to-92 npn 2N4124 2N4126 PDF

    4E7 philips

    Abstract: KY 711 VN2406L FL 210 transistor
    Text: • Philips 711002b DDbflOSS T4S ■ PHIN Sem iconductors Data sheet status Product specification date of issue July 1993 FEATURES VN2406L N-channel enhancement mode vertical D-MOS transistor PIN CONFIGURATION PINNING - TO -92 variant • Very low RDs 0n


    OCR Scan     		711002b VN2406L MBB073 711Dfl5h D0bfl057 MC9357 4E7 philips KY 711 VN2406L FL 210 transistor PDF

    BUK543

    Abstract: BUK543-60A BUK543-60B TTA10
    Text: PHILIPS INTERNATIONAL bSE D • 711DflSb ODbMlflb 54T ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic Kill-pack


    OCR Scan     		BUK543-60A/B -SOT186 BUK543 DS10NÃ BUK543-60A BUK543-60B TTA10 PDF

    bd947

    Abstract: b0945 BD945 m lc 945 BD943 BD944
    Text: BD943 BD945 BD947 H ILIPS INTERNATIONAL _ SbE J> H 711002b 0043070 SOfl • PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948.


    OCR Scan     		BD943 BD945 BD947 7110fllT\ 043070T[ BD944; T-33-17 BD945 bd947 b0945 m lc 945 BD944 PDF

    DECT base station schematic

    Abstract: PEC 738 speech scrambler pec 730 PCD5032 dect scrambler philips dect PCD5040 PCD5041 DECT mac
    Text: PHILIPS INTERNAT ION AL b?E D • 7110aEb OObSlflS STO ■ Philips Semiconductors RF Communications Product* PHIN Objective specification DECT burst mode controller PCD5040 mnnsssRBBEE The PCD5040 DECT Burst Mode Controller BMC is a custom 1C that performs the DECT Physical Layer and


    OCR Scan     		PCD5040 PCD5040 DECT base station schematic PEC 738 speech scrambler pec 730 PCD5032 dect scrambler philips dect PCD5041 DECT mac PDF

    SL 100 NPN Transistor

    Abstract: blt91 International Power Sources ferroxcube wideband hf choke Philips 4312 020 TRANSISTOR SL 100 of transistor sl 100 sl 100 transistor
    Text: PHILIPS INTERNATIONAL bSE D B 7110fl5Li DOLEb71 0 4^1 • PHIN BLT91/SL _ U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in handheld radio stations in the 900 MHz communications band.


    OCR Scan     		00L2b71 BLT91/SL OT-172D) 7110fl2b D0bSb77 SL 100 NPN Transistor blt91 International Power Sources ferroxcube wideband hf choke Philips 4312 020 TRANSISTOR SL 100 of transistor sl 100 sl 100 transistor PDF

    BFQ108

    Abstract: BFQ10 SOT122A 45005B
    Text: Philips Sem iconductors Product specification - PNP 4 GHz wideband transistor pHILIPS INTERNATIONAL DESCRIPTION 5bE ]> 3 3 -/7 BFQ108 711GÖEb DD4S5S3 fllfl • PHIN PINNING The BFQ108 is a high output voltage PNP transistor in a SOT122A envelope, primarily Intended for use


    OCR Scan     		BFQ108 711Gfl2b BFQ108 OT122A 45005B) BFQ10 SOT122A 45005B PDF

    KTY87-205

    Abstract: philips kty87 KTY87 R40 AH D 2578 HO-22 Silicon temperature sensors
    Text: KTY87-205 PHILIPS INTERNATIONAL SbE D • ?110fl2b □D47D7I1 3T4 ■ PHIN SILICON TEMPERATURE SENSORS The K T Y 8 7 are high precision te m p e ra tu re sensors w ith a positive te m p e ra tu re c o e ffic ie n t o f resistance fo r tem perature measuring and te m perature c o n tro l. In th e te m perature range 10 ° C to 110 ° C th e


    OCR Scan     		KTY87-205 47D7T KTY87 SQD103; KTY87-205 DDH7D63 philips kty87 R40 AH D 2578 HO-22 Silicon temperature sensors PDF

    LTN211

    Abstract: LXL211-G
    Text: PHILIPS INTERNATIONAL Philips Components Datasheet status Product specification date of issue July 1990 711DÖ2b DGSTlbM 752 bOE D LXL211-G PHIN rW /-?° Electro-luminescent backlight panel QUICK REFERENCE DATA DEVICE DESCRIPTION 1 3 .3 x 6 3 .5 mm Lit area dim ensions


    OCR Scan     		711Dfl2b LXL211-G LTN211 7Z2293S 100VRMS 60smax. PDF

    BSS38

    Abstract: IEC134
    Text: BSS38 PH IL I P S INTERNATIONAL SbE » 7 1 1 0 Ô 2 L 00 42330 T7fl • PHIN — SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 envelope. It is primarily intended for general purpose switching and as driver for numerical indicator tubes.


    OCR Scan     		BSS38 BSS38 IEC134 PDF

    BFQ32S

    Abstract: BFR96S GHz PNP transistor SAA 1020 Philips DLM
    Text: Philips Sem iconductors Product specification PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION ^ SbE D BFQ32S m 711002b 0G4S433 DMT • PHIN PINNING PNP transistor in a plastic SOT37 envelope. It is intended for use in UHF applications such as broadcast


    OCR Scan     		BFQ32S 7110fl2b BFR96S. BFQ32S BFR96S GHz PNP transistor SAA 1020 Philips DLM PDF

    IL 741

    Abstract: philips lps 100 BUK441 BUK441-100A BUK441-100B P101
    Text: PHILIPS INTERNATIONAL L.5E D H 711Dfl5t> 0QL.3T-H 741 • PHIN Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use In


    OCR Scan     		711Dfl5t, BUK441-100A/B BUK441 -100A -100B -SOT186 IL 741 philips lps 100 BUK441-100A BUK441-100B P101 PDF

    IC 651

    Abstract: BDS645 BD8643 BDS647 Darlington NPN Silicon Diode BDS643 BDS649 BDS651
    Text: 5bE D PHILIPS INTERNATIONAL Philips Components B D S 643/645/647/649/651 Data sheet status Product specification date o f issue April 1991 m 7110ÛEb DQ4314b 17T • PHIN r-33-z^j NPN Silicon Darlington power transistors DESCRIPTION PINNING -SOT223 DESCRIPTION


    OCR Scan     		DD4314b BDS643/645/647/649/651 r-33-z OT223, BDS644/646/648/650/652. -SOT223 BDS643 BDS645 BDS647 BDS649 IC 651 BDS645 BD8643 BDS647 Darlington NPN Silicon Diode BDS643 BDS649 BDS651 PDF

    TRANSISTOR BO 344

    Abstract: TRANSISTOR BO 341 tny 175 BUK455 BUK455-100A BUK455-100B T0220AB data transistor 1650
    Text: PHILIPS INTERNATIONAL bSE D • 7110fl2b ODbMOfll 067 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		7110flSb BUK455-100A/B T0220AB BUK455 -100A -100B TRANSISTOR BO 344 TRANSISTOR BO 341 tny 175 BUK455-100A BUK455-100B data transistor 1650 PDF