demultiplexer latch "intervening bit"
Abstract: BAS101 BAS101S
Text: BAS101; BAS101S High-voltage switching diodes Rev. 01 — 8 September 2006 Product data sheet 1. Product profile 1.1 General description High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device SMD plastic package. Table 1. Product overview
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BAS101;
BAS101S
BAS101
BAS101
BAS101S
demultiplexer latch "intervening bit"
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PESDxU1UT
Abstract: pesdxu1 PESD12VU1UT PESD15VU1UT PESD24VU1UT 149-12
Text: PESDxU1UT series Ultra low capacitance ESD protection diode in SOT23 package Rev. 01 — 11 May 2005 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance ElectroStatic Discharge ESD protection diode in a SOT23 (TO-236AB) small SMD plastic package designed to protect one high-speed data line
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O-236AB)
PESDxU1UT
pesdxu1
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
149-12
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PESD1CAN
Abstract: PESD1CAN_2
Text: PESD1CAN CAN bus ESD protection diode in SOT23 Rev. 02 — 17 October 2005 Product data sheet 1. Product profile 1.1 General description PESD1CAN in a small SOT23 Surface Mounted Device SMD plastic package designed to protect two automotive Control Area Network (CAN) bus lines from the damage caused
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spice germanium diode
Abstract: SNW-EQ-611 PXTA14 sot89 JB TRANSISTOR SMD letter CODE PACKAGE SOT23 BSP15 BSP19 BST60 germanium transistor pnp MDA100
Text: GENERAL Page Quality 2 Pro Electron type numbering system 2 Rating systems 3 Letter symbols 4 S-parameter definitions 7 Equivalent package designators 8 Transistor ratings 8 Thermal considerations 11 Power derating curves for SMDs Power derating curve for SOT23
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OT143
SC-59
SC-70
SC-88
SC-75
OT223
BD839.
O-202
spice germanium diode
SNW-EQ-611
PXTA14
sot89 JB
TRANSISTOR SMD letter CODE PACKAGE SOT23
BSP15
BSP19
BST60
germanium transistor pnp
MDA100
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smd code marking WV
Abstract: sot23-4 marking a1 A1 SOT23 marking code E1 sot23 marking code NA sot23 MARKING SOT23 .215 .235 12nc sot23-6 can bus automotive DIODE package sot23 smd marking A1 A.1 SOT23-4
Text: PESD1CAN CAN bus ESD protection diode in SOT23 Rev. 01 — 25 January 2005 Objective data sheet 1. Product profile 1.1 General description PESD1CAN in small SOT23 SMD plastic package designed to protect two automotive Control Area Network CAN bus lines from the damage caused by ElectroStatic
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PESD5V0S2BT
Abstract: No abstract text available
Text: PESD5V0S2BT Low capacitance bi-directional double ESD protection diode in SOT23 package Rev. 02 — 27 May 2004 Product data sheet 1. Product profile 1.1 General description Low capacitance bi-directional double ESD protection diode in the small SOT23 plastic
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IEC-61000-4-5
PESD5V0S2BT
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phototransistor philips
Abstract: 004583 BS415 BS7002 SL5582 SL5583 diode ja diode Optocouplers MBB038
Text: PHILIPS INTERNATIONAL 41E ]> 711GÖ2b 003D54Ö û • PHIN T - V / - « Philips Sem iconductors 3 Product specification High-voltage optocouplers SL5582/SL5583 FEATURES • A pin distance of 10.16 mm • An external clearance of 9.6 mm mimimum and an external
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711002b
003D54Ã
SL5582/SL5583
SL5582
SL5583
phototransistor philips
004583
BS415
BS7002
diode ja
diode Optocouplers
MBB038
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philips vhf uhf tuner
Abstract: BF747 SC14 Marking 2 sot23 marking code transistor 63E tuner uhf Ghz marking code TS TS SOT23
Text: b3E C bbSBTSM 00742^2 743 « S I C B NAPC/PHILIPS SE M I C O N î Philips Components Data sheet status Product specification date of issue April 1991 BF747 N PN 1 GHz wideband transistor FOR D E T A IL E D INFORM ATION SEE T H E L A T E S T ISSUE O F H AN D BO O K SC14 0 R D A T A S H E E T
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BF747
BF747
philips vhf uhf tuner
SC14 Marking 2
sot23 marking code
transistor 63E
tuner uhf Ghz
marking code TS
TS SOT23
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Untitled
Abstract: No abstract text available
Text: Philips Sem iconductors Product specification 7 H V D U A L I T Y T E C H N O L O G I E S C0 RP S7E D 74fc>bfl51 000472*1 7fi7 • 3 T Y FEATURES • A pin distance of 10.16 mm • An external clearance of 9.6 mm mimimum and an external creepage distance of 8 mm
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bfl51
OT212.
74bbflSl
0DD4fl03
MSA048-2
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Untitled
Abstract: No abstract text available
Text: • bbS3T31 Q0H433R 1S6 * A P X N AMER PHILIPS/DISCRETE BAT54 b?E T> SCHOTTKY BARRIER DIODE Silicon epitaxial Schottky barrier diode with an integrated p-n junction protection ring in a micro miniature SOT-23 envelope intended fo r surface mounting. The diode features especially a low forward voltage.
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bbS3T31
Q0H433R
BAT54
OT-23
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44t transistor
Abstract: Marking code 44t transistor 44t Self-Oscillating mixer marking 44t Bipolar Junction Transistor marking code .gj marking code gj marking GG BF569
Text: bBE D • bbSBSBM GG?426b 44T ■ SIC3 BF569 J NAPC/PHILIPS SEMICOND FOR D E T A IL E D IN F O R M A T IO N SEE TH E LATEST ISSUE OF H AN D BO O K SClOa OR D A TA S H E E T SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P tran sisto r in a m icro m in ia tu re plastic envelope, intended fo r a pplications in th ic k and th in -film
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BF569
OT-23
44t transistor
Marking code 44t
transistor 44t
Self-Oscillating mixer
marking 44t
Bipolar Junction Transistor
marking code .gj
marking code gj
marking GG
BF569
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transistor AY PNP smd
Abstract: marking code RAD SMD Transistor npn ph TRANSISTOR SMD MARKING CODE A65 smd transistor smd transistor JE MARKING SMD pnp TRANSISTOR ec smd transistor NG TRANSISTOR SMD MARKING CODE ad smd transistor GY smd transistor code SG
Text: DISCRETE SEMICONDUCTORS Preliminary specification Supersedes data of 1998 Nov 11 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EEF FEATURES PINNING • Power dissipation comparable to SOT23
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PDTA114EEF
MAM413
115002/00/02/pp8
transistor AY PNP smd
marking code RAD SMD Transistor npn
ph TRANSISTOR SMD MARKING CODE
A65 smd transistor
smd transistor JE
MARKING SMD pnp TRANSISTOR ec
smd transistor NG
TRANSISTOR SMD MARKING CODE ad
smd transistor GY
smd transistor code SG
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st smd diode marking code VU
Abstract: SMD diode sg 46 sot23 smd code ng AVN marking SMD smd code marking PE sot23
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Oct 24 Philips Sem iconductors 1999 Apr 28 PHILIPS Philips Semiconductors Product specification Schottky barrier double diodes FEATURES BAS40 series PINNING SOT23 (see Fig. 1a) • Low forward voltage
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BAS40,
BAS40-04,
BAS40-05
BAS40-06
BAS40-07
OT143B
115002/00/04/pp8
st smd diode marking code VU
SMD diode sg 46
sot23 smd code ng
AVN marking SMD
smd code marking PE sot23
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bf862
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BF862 N-channel junction FET Objective specification Philips Sem iconductors 1999 May 14 PHILIPS Philips Semiconductors Objective specification N-channel junction FET BF862 FEATURES PINNING SOT23 • High transition fre q u e n cy fo r excellent se n sitivity in
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BF862
MSB003
bf862
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10j smd diode
Abstract: BAS678 marking ATB
Text: Philips Semiconductors Product specification High-speed diode BAS678 FEATURES DESCRIPTION • Small plastic SMD package The BAS678 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small rectangular plastic SMD SOT23
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BAS678
BAS678
7110a2L.
D10flS33
10j smd diode
marking ATB
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MARKING CODE 42t
Abstract: Transistor 0270 BF marking 42t 269-3 fe 4276 9712 transistor BF 502 TRANSISTOR Bf 522 BFT93 BFT93W FC 0137
Text: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT93W uses the same crystal as the SOT23 version, BFT93. • Gold metallization ensures
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BFT93W
OT323
BFT93W
BFT93.
MBCB70
OT323.
MARKING CODE 42t
Transistor 0270 BF
marking 42t
269-3
fe 4276 9712
transistor BF 502
TRANSISTOR Bf 522
BFT93
FC 0137
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MCD228
Abstract: PMBFJ310 MCD214 MCD221 PMBFJ309 marking BSs sot23 n-channel MCD217 PMBFJ308 MA1612 SOT-23 bdi
Text: Philips Semiconductors Product specification N-channel silicon field-effect transistors FEATURES PMBFJ308, F^BW309, PMBFJ310 PINNING - SOT23 • Low noise PIN SYMBOL • Interchangeability of drain and source connections 1 s source • High gain. 2 d drain
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PMBFJ308;
PMBFJ309;
PMBFJ310
PMBFJ308:
PMBFJ309:
PMBFJ310:
MCD226
MCD228
PMBFJ310
MCD214
MCD221
PMBFJ309
marking BSs sot23 n-channel
MCD217
PMBFJ308
MA1612
SOT-23 bdi
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smd diode a6P
Abstract: A6P SMD marking a6p
Text: Product specification Philips Sem iconductors High-speed diode BAS16 FEATURES DESCRIPTION • Small plastic SMD package The BAS16 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small plastic SMD SOT23 package. • High switching speed: max. 4 ns
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BAS16
BAS16
smd diode a6P
A6P SMD
marking a6p
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification High-speed diode BAL99 FEATURES DESCRIPTION • Small plastic SMD package The BAL99 is a high-speed switching • High switching speed: max. 4 ns diode fabricated in planar technology, and encapsulated in the small SOT23
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BAL99
BAL99
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification P-channel enhancement mode MOS transistor BSH202 FEATURES PINNING - SOT23 • High-speed switching PIN SYMBOL DESCRIPTION • No secondary breakdown 1 • Direct interface to C-MOS, TTL etc. 2 s source 3 d drain
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BSH202
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BSH103
Abstract: transistor SMD g 28
Text: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor BSH103 FEATURES PINNING - SOT23 • Very low threshold PIN • High-speed switching 1 • No secondary breakdown 2 • Direct interface to C-MOS, TTL etc. 3 SYMBOL DESCRIPTION
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BSH103
BSH103
transistor SMD g 28
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P5D SMD
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PMBD914 High-speed diode FEATURES DESCRIPTION • Small plastic SMD package The PMBD914 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small plastic SMD SOT23 package. • High switching speed: max. 4 ns
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PMBD914
PMBD914
BD914
P5D SMD
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Untitled
Abstract: No abstract text available
Text: P h ilips Sem iconductors Product specification High-speed diode BAS55 FEATURES DESCRIPTION • Small plastic SMD package The BAS55 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small rectangular plastic SMD SOT23
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BAS55
BAS55
wit25
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BSH103
Abstract: smd transistor GD
Text: Product specification Philips Semiconductors N-channel enhancement mode MOS transistor BSH103 PINNING - SOT23 FEATURES • Very low threshold PIN SYMBOL • High-speed switching 1 g gate DESCRIPTION • No secondary breakdown 2 s source • Direct interface to C-MOS, TTL etc.
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BSH103
BSH103
smd transistor GD
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