2F1 SMD Transistor
Abstract: 2F2 SMD Transistor w2 smd transistor TRANSISTOR SMD w2 schematic diagram induction heating BFG425W smd transistor w2 2 GHz LNA BFG425W APPLICATION BFG410W
Text: Philips Semiconductors Application Note Ultra Low Noise Amplifiers for 900 and 2000 MHz with High IP3 by Korné Vennema Philips Semiconductors Slatersville, RI December 1996 #KV96-157 This application note describes four Low Noise Amplifier designs with the
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KV96-157
BFG410W
BFG425W,
BFG410W
BFG425W
BFG425W.
BFG400W
2F1 SMD Transistor
2F2 SMD Transistor
w2 smd transistor
TRANSISTOR SMD w2
schematic diagram induction heating
BFG425W
smd transistor w2
2 GHz LNA
BFG425W APPLICATION
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philips power CAPACITOR 157
Abstract: iec 384-4 ll 63821 47121 IEC 384 1 PA01 Philips electrolytic 116 Philips electrolytic snap-in 53561 capacitor 62821
Text: Philips Components Product specification Non-solid Al - electrolytic capacitors Power Ultra Miniature Snap-in PUM-SI 157 FEATURES • Polarized aluminium electrolytic capacitors, non-solid dbook, 4 columns • Large types, very small dimensions, cylindrical aluminium
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CCA401
CCA483
Q1000
philips power CAPACITOR 157
iec 384-4 ll
63821
47121
IEC 384 1
PA01
Philips electrolytic 116
Philips electrolytic snap-in
53561 capacitor
62821
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CECC 30301 033
Abstract: No abstract text available
Text: Philips Components Product specification Aluminium electrolytic capacitors Power Ultra Miniature Snap-in 157 PUM-SI FEATURES • Polarized aluminium electrolytic capacitors, non-solid dbook, 4 columns • Large types, very small dimensions, cylindrical aluminium
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CCA401
CCA483
CECC 30301 033
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT M3D076 BLF544 UHF power MOS transistor Product specification Supersedes data of 1998 Jan 21 2003 Sep 18 Philips Semiconductors Product specification UHF power MOS transistor BLF544 PINNING - SOT171A FEATURES • High power gain
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M3D076
BLF544
OT171A
SCA75
613524/03/pp16
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BLF544
Abstract: GP2012 philips resistor 2322 724 MRA992
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLF544 UHF power MOS transistor Product specification Supersedes data of 1998 Jan 21 2003 Sep 18 Philips Semiconductors Product specification UHF power MOS transistor BLF544 PINNING - SOT171A FEATURES • High power gain
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M3D076
BLF544
OT171A
SCA75
613524/03/pp16
BLF544
GP2012
philips resistor 2322 724
MRA992
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BLF177
Abstract: 8830 transistor transistor marking code HF
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D060 BLF177 HF/VHF power MOS transistor Product specification Supersedes data of 2003 Jul 21 2004 Dec 17 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES BLF177 PIN CONFIGURATION • High power gain
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M3D060
BLF177
MBB072
MLA876
OT121B
SCA76
R02/05/pp19
BLF177
8830 transistor
transistor marking code HF
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SOT121B
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D060 BLF177 HF/VHF power MOS transistor Product specification Supersedes data of 1998 Jul 02 2003 Jul 21 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES BLF177 PIN CONFIGURATION • High power gain
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M3D060
BLF177
OT121B
SCA75
613524/04/pp19
SOT121B
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4E7 RESISTOR 5W
Abstract: RUBYCON BXA Series TEA152x application notes RESISTOR 4E7 5W philips capacitor DIODE PK IN 5401 TEA152X SPT0508A SPT0508A-100K1R9 SPT0508A-102KR19
Text: STARplugTM Efficient Low Power supply with the TEA152x Version 1.0 AN00055 Philips Semiconductors TEA152x, Efficient Low Power Voltage supply Application Note AN00055 APPLICATION NOTE STARplugTM Efficient Low Power supply with the TEA152x Version 1.0 AN00055
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TEA152x
AN00055
TEA152x,
TEA152x
4E7 RESISTOR 5W
RUBYCON BXA Series
TEA152x application notes
RESISTOR 4E7 5W
philips capacitor
DIODE PK IN 5401
SPT0508A
SPT0508A-100K1R9
SPT0508A-102KR19
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BLF548
Abstract: MRA524
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLF548 UHF push-pull power MOS transistor Product specification Supersedes data of Oct 1992 2003 Sep 26 Philips Semiconductors Product specification UHF push-pull power MOS transistor FEATURES BLF548 PIN CONFIGURATION
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M3D091
BLF548
OT262A2
MSB008
SCA75
613524/04/pp15
BLF548
MRA524
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT M3D091 BLF548 UHF push-pull power MOS transistor Product specification Supersedes data of Oct 1992 2003 Sep 26 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 PIN CONFIGURATION FEATURES • High power gain
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M3D091
BLF548
OT262A2
MSB008
SCA75
613524/04/pp15
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MLC850
Abstract: 2322 157 philips B.A date sheet karachi RF NPN POWER TRANSISTOR 2.5 GHZ BFG11 MLC852 2222 031 capacitor philips 2222 424
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG11; BFG11/X NPN 2 GHz RF power transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 Philips Semiconductors 1995 Apr 07 Philips Semiconductors Product specification
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BFG11;
BFG11/X
OT143
BFG11
SCD38
123055/1500/03/pp12
MLC850
2322 157 philips
B.A date sheet karachi
RF NPN POWER TRANSISTOR 2.5 GHZ
BFG11
MLC852
2222 031 capacitor philips 2222 424
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blf175
Abstract: ferroxcube 4322 020 97171 MGP063 ferroxcube wideband hf choke
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D065 BLF175 HF/VHF power MOS transistor Product specification Supersedes data of 1997 Dec 15 2003 Jul 22 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES BLF175 PIN CONFIGURATION • High power gain
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M3D065
BLF175
MBB072
MSB057
OT123A
SCA75
613524/03/pp21
blf175
ferroxcube 4322 020 97171
MGP063
ferroxcube wideband hf choke
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A17980
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT M3D065 BLF175 HF/VHF power MOS transistor Product specification Supersedes data of 1997 Dec 15 2003 Jul 22 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 PIN CONFIGURATION FEATURES • High power gain
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M3D065
BLF175
MBB072
MSB057
OT123A
SCA75
613524/03/pp21
A17980
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SSB transmitter
Abstract: 7540 Group BLF145
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D065 BLF145 HF power MOS transistor Product specification Supersedes data of 1997 Dec 12 2003 Oct 13 Philips Semiconductors Product specification HF power MOS transistor FEATURES BLF145 PIN CONFIGURATION • High power gain
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M3D065
BLF145
OT123A
SCA75
613524/03/pp15
SSB transmitter
7540 Group
BLF145
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BLF244
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D065 BLF244 VHF power MOS transistor Product specification Supersedes data of 1997 Dec 17 2003 Oct 13 Philips Semiconductors Product specification VHF power MOS transistor FEATURES BLF244 PIN CONFIGURATION • High power gain
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M3D065
BLF244
MBB072
OT123A
SCA75
613524/03/pp16
BLF244
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PL 431 transistor
Abstract: No abstract text available
Text: Philips Semiconductors • bb53^31 OOS'lObM 157 M A P X Product specification UHF linear push-pull power transistor “ BLV58 N AMER PHILIPS/DISCRETE FEATURES • High power gain D "- ■ QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.
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BLV58
MBA451
PL 431 transistor
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nf029
Abstract: MRA transistor 222280905001 BLV58 016C20 Philips capacitor 013
Text: Philips Sem iconductors b b ä B IB l □ 0 2 cî 0 b l4 157 W A P X Product specification UHF linear push-pull power transistor 'N AMER PHILIPS/DISCRETE BLV58 b^E ]> Q UICK REFERENCE DATA RF performance at Th = 25 °C in a comm on em itter test circuit. FEATURES
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BLV58
BLV58
OT289
PINNING-SOT289
MRA353
nf029
MRA transistor
222280905001
016C20
Philips capacitor 013
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CECC 30301 033
Abstract: ER 157
Text: Philips Components Product specification Aluminium electrolytic capacitors Power Ultra Miniature Snap-in 157 PUM-SI FEATURES • Polarized aluminium electrolytic capacitors, non-solid • Large types, very small dimensions, cylindrical aluminium case, insulated with a blue sleeve
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Untitled
Abstract: No abstract text available
Text: P hilips Sem iconductors bb53T31 DDETT?! 525 AP X Product specification VHF push-pull power MOS transistor BLF245C N AUER PHILIPS/DISCRETE FEATURES b'lE D PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures
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bb53T31
BLF245C
OT161
-SOT161
MRA326
RA92S
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ti 72741
Abstract: MCA81 MCB835 BLF521 URA989 MCB836 MCB831 cis-04 transistor 9567
Text: Philips Semiconductors ^53^31 DD3DDÛh STD lÂPX Product specification UHF power MOS transistor BLF521 N AMER PHILIPS/DISCRETE FEATURES b^E 3> PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability • Withstands full load mismatch
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tbS3T31
BLF521
OT172D
OT172D
ti 72741
MCA81
MCB835
BLF521
URA989
MCB836
MCB831
cis-04
transistor 9567
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ac 0624 transistor 17-33
Abstract: No abstract text available
Text: Philips Semiconductors • b b 5 3 T 31 D D 3QDfib STD H A PX Product specification UHF power MOS transistor BLF521 N AUER PHILIPS/DISCRETE FEATURES b^E 3> ■ PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability
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BLF521
MBB072-!
OT172D
CA766
ac 0624 transistor 17-33
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MEAB29
Abstract: BLF245C philips power CAPACITOR 111 philips power CAPACITOR 157 2322 156 philips
Text: Philips Semiconductora Product «pacification VHF push-pull power MOS transistor T“3 * H 3 PHILIPS INTERNATIONAL FEATURES SbE J> 711GÛ2L, D D M 3 â n BLF245C 51fl « P H I N PIN CO NFIGURATION • High power gain • Easy power control • Good thermal stability
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BLF245C
OT161
PINNING-SOT161
MEAB29
BLF245C
philips power CAPACITOR 111
philips power CAPACITOR 157
2322 156 philips
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philips blx15
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E ]> • b b S B ' m PDE^S74 bOO « A P X BLX15 _ A H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band:
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BLX15
7Z67664
philips blx15
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Untitled
Abstract: No abstract text available
Text: RF Power Modules INDEX SELECTION GUIDE GENERAL CONTENTS Page 5 8 12 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
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C4382.
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