"MARKING CODE LE"
Abstract: dual-gate BF1202WR
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Preliminary specification 1999 Nov 26 Philips Semiconductors Preliminary specification BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs PINNING FEATURES
|
Original
|
BF1202;
BF1202R;
BF1202WR
BF1202WR
budgetnum/printrun/ed/pp10
"MARKING CODE LE"
dual-gate
|
PDF
|
BF1201WR
Abstract: dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs Preliminary specification 1999 Nov 26 Philips Semiconductors Preliminary specification BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs PINNING FEATURES
|
Original
|
BF1201;
BF1201R;
BF1201WR
BF1201WR
budgetnum/printrun/ed/pp10
dual-gate
|
PDF
|
BF1203
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Preliminary specification 2000 May 29 Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET FEATURES BF1203 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single
|
Original
|
MBD128
BF1203
125004/00/01/pp8
|
PDF
|
SILICON APD Pre-Amplifier
Abstract: No abstract text available
Text: Silicon APD Avalanche Photodiode on TEC, Preamplifier Modules MICROELECTRONICS 264-339795-VAR Description CMC Electronics’ 264-339795 Series are using a silicon reach through APD with a GaAs FET input transimpedance amplifier in a 12-lead TO-8 package. The amplifier internal
|
Original
|
264-339795-VAR
12-lead
550-1050nm
Opto795-VAR
SILICON APD Pre-Amplifier
|
PDF
|
Philips FI1256 MK2 TV Tuner
Abstract: fi1256 philips tv tuner 3139 147 mk2 resistor fi1256 mk2 tag 8713 fi1256mk2 tuner 3139 147 13741 Philips 3139 147 tv tuner 3139 147
Text: BU TUNERS DATA SHEET FI1256 MK2 Desktop video tuner system CCIR D/K Preliminary specification File under BU Tuners, DC03 1996 Jul 26 Philips Components Preliminary specification Desktop video tuner system CCIR D/K FI1256 MK2 FEATURES • System CCIR D/K • True 5 V device low power dissipation
|
Original
|
FI1256
TYPE920
COD06
Philips FI1256 MK2 TV Tuner
philips tv tuner 3139 147
mk2 resistor
fi1256 mk2
tag 8713
fi1256mk2
tuner 3139 147 13741
Philips 3139 147
tv tuner 3139 147
|
PDF
|
Philips 3139 147
Abstract: mk2 tuner mk2 resistor FI1246 3139 147 13721 JUPITER M series connector FED tuner 3139 147 Philips TV front end module philips tv tuner 3139 147 Philips TV IC
Text: BU TUNERS DATA SHEET FI1246 MK2 Desktop video tuner system CCIR I Preliminary specification File under BU Tuners, DC03 1996 Jul 26 Philips Components Preliminary specification Desktop video tuner system CCIR I FI1246 MK2 FEATURES • System CCIR I • True 5 V device low power dissipation
|
Original
|
FI1246
COD06
Philips 3139 147
mk2 tuner
mk2 resistor
3139 147 13721
JUPITER M series connector FED
tuner 3139 147
Philips TV front end module
philips tv tuner 3139 147
Philips TV IC
|
PDF
|
photodiode 1550nm nep
Abstract: No abstract text available
Text: InGaAs Avalanche Photodiode on TEC, Preamplifier Modules MICROELECTRONICS 264-339759-VAR Description CMC Electronics’ 264-339759 Series are using either a InGaAs APD with an ionization ratio of 0.2 or a Silion APD with an ionization ratio of 0.02. The APD is coupled to a Gasfet input
|
Original
|
264-339759-VAR
12lead
200um]
200um,
Opto759-VAR
photodiode 1550nm nep
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 80 & 200 m InGaAs Avalanche Photodiode Preamplifier Module MICROELECTRONICS 264-339757-VAR Description CMC Electronics’ 264-339757-VAR are using a low noise InGaAs APD with an ionization ratio of 0.2 with a GaAs FET input transimpedance amplifier in a 12-lead TO-8 package. The
|
Original
|
264-339757-VAR
264-339757-VAR
12-lead
1000-1600nm
200um
Opto757-VAR
|
PDF
|
TDA10086
Abstract: SMD CODE N10 8PSK HTSSOP32 TDA8260TW TDA8261TW TDA8260
Text: INTEGRATED CIRCUITS DATA SHEET TDA8261TW Satellite Zero-IF QPSK/8PSK downconverter with PLL synthesizer Preliminary specification Supersedes data of 2003 May 28 2004 May 26 Philips Semiconductors Preliminary specification Satellite Zero-IF QPSK/8PSK downconverter with PLL synthesizer
|
Original
|
TDA8261TW
SCA76
R25/02/pp22
TDA10086
SMD CODE N10
8PSK
HTSSOP32
TDA8260TW
TDA8261TW
TDA8260
|
PDF
|
TDA10086
Abstract: SMD TRANSISTOR N13 line AMPLIFIER satellite HTSSOP32 TDA8260TW TDA8261TW CRYSTAL SMD 4MHZ satellite tuner
Text: INTEGRATED CIRCUITS DATA SHEET TDA8261TW Satellite Zero-IF QPSK/8PSK downconverter with PLL synthesizer Product specification Supersedes data of 2004 May 26 2004 Oct 25 Philips Semiconductors Product specification Satellite Zero-IF QPSK/8PSK downconverter with PLL synthesizer
|
Original
|
TDA8261TW
SCA76
R25/03/pp22
TDA10086
SMD TRANSISTOR N13
line AMPLIFIER satellite
HTSSOP32
TDA8260TW
TDA8261TW
CRYSTAL SMD 4MHZ
satellite tuner
|
PDF
|
00941
Abstract: BF1205
Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1205 Dual N-channel dual gate MOS-FET Product specification 2003 Sep 30 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1205 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single
|
Original
|
MBD128
BF1205
OT363
SCA75
R77/01/pp24
00941
BF1205
|
PDF
|
photodiode InGaAs NEP
Abstract: No abstract text available
Text: Receiver TIA with TEC MICROELECTRONICS 200 MHz , 200 m InGaAs APD Avalanche Photodiode 264-339769-101 Description CMC Electronics’ 264-339769-101 is using a low noise InGaAs APD with an ionization ratio of 0.2 with a GaAs FET input transimpedance amplifier
|
Original
|
12-lead
200um]
Opto769-101
photodiode InGaAs NEP
|
PDF
|
MOSFET 4466
Abstract: 4466 8 pin mosfet pin voltage dual sot363 BF1102 mosfet 1412 dual gate mosfet MGS365 marking code AL mosfet handbook
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage MBD128 BF1102 Dual N-channel dual gate MOS-FET Preliminary specification 1999 Jul 08 Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102 PINNING - SOT363 FEATURES • Two low noise gain controlled amplifiers in a single
|
Original
|
MBD128
BF1102
OT363
125004/00/01/pp12
MOSFET 4466
4466 8 pin mosfet pin voltage
dual sot363
BF1102
mosfet 1412
dual gate mosfet
MGS365
marking code AL
mosfet handbook
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Silicon APD Avalanche Photodiode Preamplifier Module MICROELECTRONICS 264-339794-VAR Description CMC Electronics’ 264-339794 Series are using a silicon reach through APD with a GaAs FET input transimpedance amplifier in a 12-lead TO-8 package. The amplifier internal feedback
|
Original
|
264-339794-VAR
12-lead
500-1050nm
500um,
200um,
Opto794-VAR
|
PDF
|
|
|
transistor marking NEP ghz
Abstract: dk 2482 transistor BF1105WR marking code NA BF1105 BF1105R MGM253 dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Dec 01 File under Discrete Semiconductors, SC07 1997 Dec 02 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs
|
Original
|
BF1105;
BF1105R;
BF1105WR
SCA56
117067/00/03/pp16
transistor marking NEP ghz
dk 2482 transistor
BF1105WR
marking code NA
BF1105
BF1105R
MGM253
dual-gate
|
PDF
|
SN74HC logic family
Abstract: MM74HC compare to MC74HC sn74lvc SOT505-2 ti 74lvc family 74ABT FAIRCHILD FAIRCHILD MM74HC 4000B 74ABT 74AHC
Text: Semiconductors Innovative Logic Solutions from Philips Trend setting innovations in Logic Philips offers a huge portfolio of logic solutions ranging from mature to state-of-the-art families, covering 5 V all the way down to 1.8 V devices as well as specialty logic functions.
|
Original
|
|
PDF
|
BF1207
Abstract: No abstract text available
Text: BF1207 Dual N-channel dual gate MOSFET Rev. 01 — 28 July 2005 Product data sheet 1. Product profile 1.1 General description The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable Direct Current
|
Original
|
BF1207
BF1207
OT363
MSC895
|
PDF
|
K 2611 MOSFET
Abstract: K 2611 MOSFET VOLTAGE RATING mosFET K 2611 9439 2n BF1206F Shortform Data and Cross References Mosfet UHF transistor handbook
Text: BF1206F Dual N-channel dual gate MOSFET Rev. 01 — 30 January 2006 Product data sheet 1. Product profile 1.1 General description The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current
|
Original
|
BF1206F
BF1206F
OT666
K 2611 MOSFET
K 2611 MOSFET VOLTAGE RATING
mosFET K 2611
9439 2n
Shortform Data and Cross References Mosfet
UHF transistor handbook
|
PDF
|
SN74HC logic family
Abstract: MM74VHCTXXXM SN74HC cross reference sot753 SOT886 MM74HC HEF4000 family 74lvc* dual register HEF4000 series 74AHC
Text: Semiconductors General-purpose logic solutions Commitment and innovation Commitment and innovation Philips is deeply committed to the logic market and continually invests in new process technologies and packaging facilities to ensure that our portfolio remains leading-edge. We offer a very broad variety
|
Original
|
|
PDF
|
MARKING 5F SOT363
Abstract: BF1204 FET MARKING CODE km 1667
Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Nov 13 2001 Apr 25 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1204
|
Original
|
MBD128
BF1204
OT363
613512/02/pp12
MARKING 5F SOT363
BF1204
FET MARKING CODE
km 1667
|
PDF
|
224M Z5U 50
Abstract: 473Z 103M capacitor Z5U A40A330J A40A270J A41A102K A333M 104m Z5U 50 A41C104K 15z5
Text: Ceramic Capacitors Series A Mono-Axial 50VDC and 100VDC Conformai Coated Axial Multilayer Capacitors Description: • See figures 1 and 2 for part num ber code for OEM and distributor • Temperature coefficient: COG, X7R, Z5U Param eters Term inal strength:
|
OCR Scan
|
50VDC
100VDC
S-198-CII,
RS-296
100VDC
3C224M
A43C334M
A43C474Z
A472K15X7RFVVWA
224M Z5U 50
473Z
103M capacitor Z5U
A40A330J
A40A270J
A41A102K
A333M
104m Z5U 50
A41C104K
15z5
|
PDF
|
104m Z5U 50
Abstract: 103M capacitor Z5U Z5U 103M ase 104m capacitor 104m z5u 50 G391K C41C102K C43C103 103M z5u JUPITER ber
Text: Ceramic Capacitors Series G Mono-Glass 50VDC Glass Encapsulated, Axial Multilayer Capacitors D escription: Series G Glass Encapsulated capacitors feature reliable hermetically sealed type, glass to metal construction. This durable construction prevents reflow of
|
OCR Scan
|
50VDC
17Z5U
G333M17Z5UFVVWG
G393M17Z5UFVVWH
G473M
104m Z5U 50
103M capacitor Z5U
Z5U 103M
ase 104m
capacitor 104m z5u 50
G391K
C41C102K
C43C103
103M z5u
JUPITER ber
|
PDF
|
MOSFET 4466
Abstract: 4466 8 pin mosfet pin voltage 4466 mosfet
Text: DISCRETE SEMICONDUCTORS BITÂ SyiIT BF1102 Dual N-channel dual gate MOS-FET Preliminary specification Philips Sem iconductors 1999 May 17 PHILIPS Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102 PINNING - SOT363 FEATURES
|
OCR Scan
|
BF1102
OT363
BF1102
MOSFET 4466
4466 8 pin mosfet pin voltage
4466 mosfet
|
PDF
|
srf 2838
Abstract: No abstract text available
Text: Philips Sem iconductors Product specification Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners TDA5737M FEATURES GENERAL DESCRIPTION • Balanced mixer with a common emitter input for band A single input The TDA5737M is a monolithic integrated circuit that
|
OCR Scan
|
BB132
BB134
BB133
TDA5737M
113kN,
srf 2838
|
PDF
|
