ph 4148 zener diode
Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS
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DN-40
74ABT126
74ABT2240
X3G-BZX84-C7V5
X3G-BZX84-C9V1
ph 4148 zener diode
philips zener diode ph 4148
pcf0700p
Zener Diode ph 4148
PCA1318P
ck2605
pcf0700p/051
philips Pca1318p
on4673
Zener Diode 4148
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smd code marking WV
Abstract: BBY39
Text: BBY39 UHF variable capacitance double diode Rev. 02 — 30 June 2004 Product data sheet 1. Product profile 1.1 General description The BBY39 is a variable capacitance double diode with a common cathode, fabricated in planar technology and encapsulated in the SOT23 small plastic SMD package.
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BBY39
BBY39
sym032
smd code marking WV
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BB804
Abstract: smd code marking C8
Text: BB804 VHF variable capacitance double diode Rev. 03 — 1 July 2004 Product data sheet 1. Product profile 1.1 General description The BB804 is a variable capacitance double diode with a common cathode, fabricated in planar technology and encapsulated in the SOT23 small plastic SMD package.
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BB804
BB804
sym032
smd code marking C8
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BAT18
Abstract: No abstract text available
Text: BAT18 Silicon planar diode Rev. 02 — 31 August 2004 Product data sheet 1. Product profile 1.1 General description Planar high performance band-switching diode in a small rectangular SOT23 SMD plastic package. 1.2 Features • ■ ■ ■ Continuous reverse voltage: max. 35 V
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BAT18
sym044
BAT18
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Untitled
Abstract: No abstract text available
Text: BAT18 Silicon planar diode Rev. 02 — 31 August 2004 Product data sheet 1. Product profile 1.1 General description Planar high performance band-switching diode in a small rectangular SOT23 SMD plastic package. 1.2 Features • ■ ■ ■ Continuous reverse voltage: max. 35 V
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BAT18
sym044
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13404
Abstract: PMBT3640
Text: PMBT3640 PNP 1 GHz switching transistor Rev. 03 — 6 July 2004 Product data sheet 1. Product profile 1.1 General description PNP general purpose switching transistor in a SOT23 package. 1.2 Features • Volume delivery ■ Short lead times ■ Smallest packages.
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PMBT3640
sym013
13404
PMBT3640
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PMBFJ108
Abstract: PMBFJ109 PMBFJ110 pmbfj108_109_110_
Text: PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs Rev. 03 — 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features • High-speed switching ■ Interchangeability of drain and source connections
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PMBFJ108;
PMBFJ109;
PMBFJ110
PMBFJ108)
sym053
PMBFJ108
PMBFJ109
PMBFJ110
pmbfj108_109_110_
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ST 9340
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PSSI3120CA PECL termination Product specification 2001 Jul 19 Philips Semiconductors Product specification PECL termination PSSI3120CA PINNING - SOT23 FEATURES • Single channel PECL termination in a three pin SOT23
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M3D088
PSSI3120CA
PSSI3120CA
MGC421
di20CA
13-Feb-03)
ST 9340
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smd code marking WV
Abstract: sot23-4 marking a1 A1 SOT23 marking code E1 sot23 marking code NA sot23 MARKING SOT23 .215 .235 12nc sot23-6 can bus automotive DIODE package sot23 smd marking A1 A.1 SOT23-4
Text: PESD1CAN CAN bus ESD protection diode in SOT23 Rev. 01 — 25 January 2005 Objective data sheet 1. Product profile 1.1 General description PESD1CAN in small SOT23 SMD plastic package designed to protect two automotive Control Area Network CAN bus lines from the damage caused by ElectroStatic
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mrc145
Abstract: MRC147 mrc150 BF556A BF556B BF556C mrc144 MRC149
Text: BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Rev. 03 — 5 August 2004 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to electrostatic discharge ESD . Therefore care should be taken
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BF556A;
BF556B;
BF556C
MSC895
mrc145
MRC147
mrc150
BF556A
BF556B
BF556C
mrc144
MRC149
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BF861
Abstract: BF861A BF861B BF861C bf861 application
Text: BF861A; BF861B; BF861C N-channel junction FETs Rev. 04 — 24 September 2004 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical junction field effect transistors in a SOT23 package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against
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BF861A;
BF861B;
BF861C
MSC895
BF861
BF861A
BF861B
BF861C
bf861 application
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BF545A
Abstract: BF545B BF545C
Text: BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Rev. 03 — 5 August 2004 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to electrostatic discharge ESD . Therefore care should be taken
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BF545A;
BF545B;
BF545C
MSC895
BF545A)
BF545A
BF545B
BF545C
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PESD1CAN
Abstract: PESD1CAN_2
Text: PESD1CAN CAN bus ESD protection diode in SOT23 Rev. 02 — 17 October 2005 Product data sheet 1. Product profile 1.1 General description PESD1CAN in a small SOT23 Surface Mounted Device SMD plastic package designed to protect two automotive Control Area Network (CAN) bus lines from the damage caused
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BAP70-05
Abstract: No abstract text available
Text: BAP70-05 Silicon PIN diode Rev. 01 — 5 April 2004 Product data sheet 1. Product profile 1.1 General description Two planar PIN diodes in common cathode configuration in a SOT23 small SMD plastic package. 1.2 Features • High voltage; current controlled
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BAP70-05
sym027
BAP70-05
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RF TRANSISTOR 1.5 GHZ
Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ RF NPN POWER TRANSISTOR 3 GHZ zo 103 ma Types of Radar 1.2 ghz tuner radar circuit component transistor equivalent table MRA705 RF TRANSISTOR 2.5 GHZ s parameter
Text: BFR520 NPN 9 GHz wideband transistor Rev. 03 — 1 September 2004 Product data sheet 1. Product profile 1.1 General description The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features • ■ ■ ■ High power gain
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BFR520
BFR520
RF TRANSISTOR 1.5 GHZ
RF NPN POWER TRANSISTOR 2.5 GHZ
RF NPN POWER TRANSISTOR 3 GHZ
zo 103 ma
Types of Radar
1.2 ghz tuner
radar circuit component
transistor equivalent table
MRA705
RF TRANSISTOR 2.5 GHZ s parameter
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transistor smd ZR
Abstract: MARKING SMD PNP TRANSISTOR Zr transistor smd ZR npn TRANSISTOR SMD MARKING CODE UA transistor SMD BP smd transistor marking zr smd code marking sot23 philips transistor smd code TRANSISTOR SMD MARKING CODE transistor ZR 08
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 2PC4617J NPN general purpose transistor Product specification Supersedes data of 1999 May 04 2001 Aug 03 Philips Semiconductors Product specification NPN general purpose transistor 2PC4617J PINNING FEATURES • Power dissipation comparable to SOT23
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M3D425
2PC4617J
SCA73
613514/03/pp8
transistor smd ZR
MARKING SMD PNP TRANSISTOR Zr
transistor smd ZR npn
TRANSISTOR SMD MARKING CODE UA
transistor SMD BP
smd transistor marking zr
smd code marking sot23
philips transistor smd code
TRANSISTOR SMD MARKING CODE
transistor ZR 08
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smd code marking WV
Abstract: BBY42 133-8-8
Text: BBY42 VHF variable capacitance diode Rev. 02 — 1 October 2004 Product data sheet 1. Product profile 1.1 General description The BBY42 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOT23 small plastic SMD package.
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BBY42
BBY42
sym047
smd code marking WV
133-8-8
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all transistor data sheet
Abstract: free download transistor data sheet zo 103 ma CATV amplifier transistor transistor equivalent table RF NPN POWER TRANSISTOR 2.5 GHZ philips satellite systems common emitter amplifier all ic data common collector amplifier circuit designing
Text: BFR540 NPN 9 GHz wideband transistor Rev. 05 — 1 September 2004 Product data sheet 1. Product profile 1.1 General description The BFR540 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features • ■ ■ ■ High power gain
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BFR540
BFR540
all transistor data sheet
free download transistor data sheet
zo 103 ma
CATV amplifier transistor
transistor equivalent table
RF NPN POWER TRANSISTOR 2.5 GHZ
philips satellite systems
common emitter amplifier
all ic data
common collector amplifier circuit designing
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PESDxU1UT
Abstract: pesdxu1 PESD12VU1UT PESD15VU1UT PESD24VU1UT 149-12
Text: PESDxU1UT series Ultra low capacitance ESD protection diode in SOT23 package Rev. 01 — 11 May 2005 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance ElectroStatic Discharge ESD protection diode in a SOT23 (TO-236AB) small SMD plastic package designed to protect one high-speed data line
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O-236AB)
PESDxU1UT
pesdxu1
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
149-12
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smd code marking sot23
Abstract: MARKING SOT23 .215 .235 data sheet for all smd components MV SOT23 sot23 marking code SOT23 marking codes SOT23 DIODE marking CODE AV marking code 10 sot23 SMD Packages transistor smd code marking 420
Text: PMEGxx05ET series 0.5 A very low VF MEGA Schottky barrier rectifiers in SOT23 package Rev. 01 — 15 July 2005 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an
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PMEGxx05ET
PMEG2005ET
PMEG3005ET
PMEG4005ET
smd code marking sot23
MARKING SOT23 .215 .235
data sheet for all smd components
MV SOT23
sot23 marking code
SOT23 marking codes
SOT23 DIODE marking CODE AV
marking code 10 sot23
SMD Packages
transistor smd code marking 420
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HE 13003
Abstract: 13003 HE X 13003 smd transistor 13003 F 13003 13003 application notes transistor 13003 K1 E 13003 cd 13003 bp 13003
Text: BB207 FM variable capacitance double diode Rev. 02 — 27 April 2004 Product data sheet 1. Product profile 1.1 General description The BB207 is a variable capacitance double diode with a common cathode, fabricated in silicon planar technology, and encapsulated in the SOT23 small plastic SMD package.
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BB207
BB207
sym032
HE 13003
13003 HE
X 13003
smd transistor 13003
F 13003
13003 application notes
transistor 13003
K1 E 13003
cd 13003
bp 13003
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PMBFJ111
Abstract: PMBFJ112 philips PMBFJ113 PMBFJ113 pmbfj111_112_113_
Text: PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs Rev. 03 — 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features • High-speed switching ■ Interchangeability of drain and source connections
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PMBFJ111;
PMBFJ112;
PMBFJ113
PMBFJ111)
sym053
PMBFJ113.
PMBFJ111
PMBFJ112
philips PMBFJ113
PMBFJ113
pmbfj111_112_113_
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BF747
Abstract: MBB400 sot23-4 marking a1
Text: BF747 NPN 1 GHz wideband transistor Rev. 03 — 27 July 2004 Product data sheet 1. Product profile 1.1 General description Low cost NPN transistor in a SOT23 plastic package. 1.2 Features • Stable oscillator operation ■ High current gain ■ Good thermal stability.
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BF747
BF747
MBB400
sot23-4 marking a1
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bf547 philips
Abstract: BF547 B12 IC marking code marking code 604 SOT23
Text: BF547 NPN 1 GHz wideband transistor Rev. 03 — 27 July 2004 Product data sheet 1. Product profile 1.1 General description Low cost NPN transistor in a SOT23 plastic package. 1.2 Features • ■ ■ ■ Feedback capacitance typically 1 pF Stable oscillator operation
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BF547
bf547 philips
BF547
B12 IC marking code
marking code 604 SOT23
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