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    PHILIPS CAPACITOR 151 Search Results

    PHILIPS CAPACITOR 151 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFM15PC755R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC435R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC915R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    DE6B3KJ151KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ471KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    PHILIPS CAPACITOR 151 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    A104K20X7RF5TAA

    Abstract: philips axial ceramic capacitor philips markings philips ceramic leaded capacitors 1500 pf 2222 123 capacitor philips a681j A102J a473k15x7rf5taa 2222 330 40104 capacitors Philips film capacitors 27 pf
    Text: Philips Components Product specification Mono-axialTM series Leaded ceramic multilayer capacitors FEATURES DESCRIPTION • High capacitance per unit volume The basic capacitor construction consists of ceramic dielectric materials processed into a tape with a typical thickness range


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    CW20C104K

    Abstract: CL31B104KBNC CY20C104M 474j capacitor CL31B102KBNC UP36BA0350 CW15C103K ECPU01105MA5 CL21B104KBNC CW20C473K
    Text: Cornell Dubilier Electronics, Inc. - Complete Capacitor Cross Reference AERO M, AEROVOX, ARCO, ASC, ATC, AVX, BC/PHILIPS, BISHOP, CAL-CHIP, CENTRALAB, COOPER, ELECTROCUB, ELECTRONIC CONCEPTS, ELNA, EVOX, GE, HOBART, IBM, ILLINOIS CAP, JOHANSON, KEMET, KINGSTON, KOA, KORCHIP, KYOCERA, LELAND, LENNOX, MALLORY/NACC,


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    AGA100M050 SKA100M050 AGA100M063 SKA100M063 AFK477M10F24T AFK686M16D16T AFK107M16D16T AFK157M16X16T AFK158M16H32T AFK226M16C12T CW20C104K CL31B104KBNC CY20C104M 474j capacitor CL31B102KBNC UP36BA0350 CW15C103K ECPU01105MA5 CL21B104KBNC CW20C473K PDF

    IR TRansmitter and receiver wikipedia

    Abstract: SIEMENS 565-2 white noise Generator 1GHz ECC85 samsung colour tv kit circuit diagram Kathrein Antennas elektra c radio diagram philips rf manual Funkamateur varactor diode model in ADS
    Text: Semiconductors Appendix RF Manual 6th edition May 2005 date of release: May 2005 document order number: 9397 750 15125 Contents 1. RF Application-Basics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5


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    821 ceramic capacitor

    Abstract: philips catalog potentiometer philips resistor 2322 BLF544 MBK442
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLF544 UHF power MOS transistor Product specification Supersedes data of October 1992 1998 Jan 21 Philips Semiconductors Product specification UHF power MOS transistor BLF544 PINNING - SOT171A FEATURES • High power gain


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    M3D076 BLF544 OT171A SCA57 127067/00/02/pp16 821 ceramic capacitor philips catalog potentiometer philips resistor 2322 BLF544 MBK442 PDF

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    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT M3D076 BLF544 UHF power MOS transistor Product specification Supersedes data of 1998 Jan 21 2003 Sep 18 Philips Semiconductors Product specification UHF power MOS transistor BLF544 PINNING - SOT171A FEATURES • High power gain


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    M3D076 BLF544 OT171A SCA75 613524/03/pp16 PDF

    BLF544

    Abstract: GP2012 philips resistor 2322 724 MRA992
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLF544 UHF power MOS transistor Product specification Supersedes data of 1998 Jan 21 2003 Sep 18 Philips Semiconductors Product specification UHF power MOS transistor BLF544 PINNING - SOT171A FEATURES • High power gain


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    M3D076 BLF544 OT171A SCA75 613524/03/pp16 BLF544 GP2012 philips resistor 2322 724 MRA992 PDF

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    Abstract: No abstract text available
    Text: Philips Components Product specification Technical Notes Series 3000 Technical Notes CALCULATION OF CORE TEMPERATURE 1 Core Temp = Ambient + ^ x ^ r e a ' 1 CAPACITOR LIFE PREDICTION GUIDELINES WATTS K = .006 sq. inch °C The following equations and tables can be used to


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    Abstract: No abstract text available
    Text: Philips Semiconductors bb 5 3 S 31 0 0 2 T 2 b 7 72A H APX Product specification UHF push-pull power transistor BLV948 N AMER PHILIPS/DISCRETE FEATURES • Double input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting


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    BLV948 PDF

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    Abstract: No abstract text available
    Text: Philips Semiconductors ^53= 131 0030 1 2 b TO? • APX ^roductspecjfjcat^ UHF power MOS transistor BLF544 N AUER PHILIPS/DISCRETE FEATURES b'iE D PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability / • Gold metallization ensures


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    BLF544 OT171 PDF

    PQ-32/MCA908

    Abstract: No abstract text available
    Text: Philips Semiconductors 0030115 121 • A P X ^ S i a S S i S S S t,h 5 3 m UHF power MOS transistor ^ BLF543 N AMER PHILIPS/DISCRETE b^E » ' PIN CONFIGURATION FEATURES • High power gain • Easy power control / -\ • Good thermal stability o • Gold metallization ensures


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    BLF543 OT171 D03D125 MCA905 PQ-32/MCA908 PDF

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    Abstract: No abstract text available
    Text: Philips Sem iconductors 0030155 flO fl UHF push-pull power MOS transistor B i APX Product specification BLF546 N ANER PHILIPS/DISCRETE bRE » PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures


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    BLF546 OT268 00301b2 00301b3 PDF

    BLF548

    Abstract: 015 capacitor philips ceramic trimmer capacitor T-39 SOT262A2 665mm tj915 D0440
    Text: Product «pacification Philips Semiconductor« UHF push-pull power MOS transistor BLF548 SbE D PHILIPS INTERNATIONAL I 711DflSb 0044051 ôdb BIPHIN T - 3 1 - / S PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability


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    OT262A2 BLF548 T-31-/S MBA379 BLF548 015 capacitor philips ceramic trimmer capacitor T-39 SOT262A2 665mm tj915 D0440 PDF

    c38 transistor

    Abstract: PHILIPS 4330 030 36300 transistor tt 2222 c39 transistor L33 TRANSISTOR TT 2222 npn 4330 030 36 ferroxcube FERROXCUBE 4330 b3171 transistor c37
    Text: t m 7110821, D0b31t,4 m BIPHIN Philips Semiconductors_ _ . . bSE T> PHILIPS INTERNATIONAL UHF push-pull power transistor FEATURES • Double input and output matching for easy matching and high gain QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.


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    D0b31t BLV948 OT262A2 MRC117 2x100 c38 transistor PHILIPS 4330 030 36300 transistor tt 2222 c39 transistor L33 TRANSISTOR TT 2222 npn 4330 030 36 ferroxcube FERROXCUBE 4330 b3171 transistor c37 PDF

    BLF543

    Abstract: 4312 020 36640 2222 kn a ceramic capacitor, 20pF 2222 capacitor philips Go-mat capacitor philips 425 ATC capacitor 2322 151 2222 030 capacitor philips
    Text: Product specification Philips Semiconductors UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES BLF543 SbE D • 711Dfl2b 50b « P H I N PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability


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    BLF543 711Dfl5b OT171 OT171 BLF543 4312 020 36640 2222 kn a ceramic capacitor, 20pF 2222 capacitor philips Go-mat capacitor philips 425 ATC capacitor 2322 151 2222 030 capacitor philips PDF

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    Abstract: No abstract text available
    Text: Philips S em iconductors bb53T31 0 0 30 1 7 3 6B3 • APX UHF push-pull power MOS transistor N AUER PHILIPS/DISCRETE Product specification BLF548 b^E D . — PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability


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    bb53T31 BLF548 MSB008 OT262A2 MRA526 PDF

    IFBB

    Abstract: No abstract text available
    Text: Philips Semiconductors b b S 3T 31 0 Q 3 Q lb 4 610 M UHF push-pull power MOS transistor a n N AMER PHILIPS/DISCRETE FEATURES APX Product specification BLF547 bH E I PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures


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    BLF547 OT262A2 0D30172 MRB022 IFBB PDF

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    Abstract: No abstract text available
    Text: P hilips Sem iconductors ^53=131 0030006 000 • A PX eliminary specification BLF276 VHF pow er MOS transistor N AMER PHILIPS/DISCRETE b 'lE PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability DESCRIPTION Silicon N-channel enhancement


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    BLF276 MSA306 OT119 PINNING-SOT119D3 MRA941 MRA933 MBA379 PDF

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    Abstract: No abstract text available
    Text: P hilips Sem iconductors bb53T31 DDETT?! 525 AP X Product specification VHF push-pull power MOS transistor BLF245C N AUER PHILIPS/DISCRETE FEATURES b'lE D PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures


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    bb53T31 BLF245C OT161 -SOT161 MRA326 RA92S PDF

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    Abstract: No abstract text available
    Text: bhi.53c131 QOSTSHT ?D2 BB A P X Philips Semiconductors Product specification UHF push-pull power transistor — — — — — FEATURES — H BLV945A AMER PHILIPS/DISCRETE b^E J> ' QUICK REFERENCE DATA • Double internal input matching for easy matching and high gain


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    BLV945A MRC106 PDF

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    Abstract: No abstract text available
    Text: Philips S em iconductors bbSHTBl Q0301Mb ATS M APX Product specification UHF push-pull power MOS transistor — •— BLF545 N AMER PHILIPS/DISCRETE FEATURES b^E D _ PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures


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    Q0301Mb BLF545 OT268 bb53T31 MCA828 PDF

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    Abstract: No abstract text available
    Text: Philips Semiconductors bbSB'lBl 00300^7 38b • APX Product specification UHF power MOS transistor BLF522 N AMER PHILIPS/DISCRETE FEATURES b'lE » PIN CONFIGURATION • High power gain o • Easy power control - ''l • Gold metallization • Good thermal stability


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    BLF522 OT171 MRA248 PDF

    transistor j127

    Abstract: No abstract text available
    Text: Philips Semiconductors bbS3T31 OOHT^bH 512 M A P X Prodwtspecltlcatlon VHF push-pull power MOS transistor BLF245B N AMER PHILIPS/ 5 ISCRETE t iT E ]> PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures


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    bbS3T31 BLF245B OT279 OT279 transistor j127 PDF

    BJE 42

    Abstract: 9 BJE 42
    Text: Philips S em iconductors bbS3R31 003010b H R Ap y Product spec if ication UHF power MOS transistor BLF542 N AMER PHILIPS/DISCRETE FEATURES bRE T> PIN CONFIGURATION • High power gain < • Easy power control • Gold metallization '" " “v o • Good thermal stability


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    bbS3R31 003010b BLF542 MBA931 MRA732 MRA971 BJE 42 9 BJE 42 PDF

    MRC106

    Abstract: LI 20 AB c38 transistor MRC112 philips e3 BLV945A C360 ferroxcube 4322 TRANSISTOR bh 4322 057
    Text: Philips Semiconductors • 711D6gb 0 D b 3 m b ' PHILIPS INTERNATIONAL UHF push-pull power transistor FEATURES • Double internal input matching for easy matching and high gain T7b M P H I N Product specification bSE D BLV945A QUICK REFERENCE DATA RF performance at Th = 25 °C In a common emitter class-AB push-pull test


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    BLV945A OT324 MRC107 MRC106 LI 20 AB c38 transistor MRC112 philips e3 BLV945A C360 ferroxcube 4322 TRANSISTOR bh 4322 057 PDF