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    PHILIPS 550 SOT143 Search Results

    PHILIPS 550 SOT143 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ADSP-21369KSWZ-1A Analog Devices 266 MHz, Shared Memory,S/PDIF Visit Analog Devices Buy
    ADSP-21369BSWZ-2A Analog Devices 333 MHz, Shared Memory,S/PDIF Visit Analog Devices Buy
    ADSP-21369KSWZ-5A Analog Devices 366MHz Shared Memory,S/PDIF Visit Analog Devices Buy
    ADSP-21369KSWZ-2A Analog Devices 333 MHz, Shared Memory,S/PDIF Visit Analog Devices Buy
    ADSP-21369KBPZ-3A Analog Devices 400 MHZ Sh Memory ,S/PDIF/SDRA Visit Analog Devices Buy

    PHILIPS 550 SOT143 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TEA15xx-series

    Abstract: laptop inverter ccfl low noise transistors bc638 power transistor transistors equivalents TV power transistor datasheet AN10117-01 PNP SOT89 laptop motherboard resistors Royer oscillator Schottky Diode SC-62
    Text: Application Note Medium Power Transistors and Rectifiers for Power Management Applications AN10117-01 Philips Semiconductors 1.2/W97 TRAD Medium Power Transistors and Rectifiers for Power Management Applications AN10117-01 Application Note Philips Semiconductors


    Original     		PDF AN10117-01 2/W97 AN10116: AN10230: PMEG1020EA PMEG2010EA D-22529 TEA15xx-series laptop inverter ccfl low noise transistors bc638 power transistor transistors equivalents TV power transistor datasheet AN10117-01 PNP SOT89 laptop motherboard resistors Royer oscillator Schottky Diode SC-62

    sc74750

    Abstract: MSE-200 PESD5VOL4UW KMZ52 kmz51 smd transistor BC557 PBLS1504V 2n5551 smd PMBS3904, PMSS3904 sc7921
    Text: Discretes For Bipolar Transistors and Discrete MOSFETs please check the Power Management Chapter, pages 189-239. For RF Consumer Products please find following tables in the RF Products Chapter from page 252 onwards: RF PIN diodes RF Bandswitch diodes RF Varicap diodes


    Original     		PDF OT346 SC-59) sc74750 MSE-200 PESD5VOL4UW KMZ52 kmz51 smd transistor BC557 PBLS1504V 2n5551 smd PMBS3904, PMSS3904 sc7921

    1PS74SB43

    Abstract: sod87 Melf 1PS75SB45 1PS59SB20 1PS76SB21 1PS59SB10 1PS76SB17 1PS59SB21 1PS79SB62 BAS70
    Text: Semiconductors Date of release: February 2005 Schottky barrier diodes portfolio General purpose Schottky barrier diodes 100 25 SOD80C SOD68 SOT346 MiniMelf (DO-34) (SC-59) SOT23 Surface Leaded glass Plastic SMD Plastic SMD Plastic SMD Plastic flat lead 260


    Original     		PDF OD80C SC-59) OD323 SC-88) SC-76) BAT760 BAT960 1PS79SB10 BAT54L BAT754 1PS74SB43 sod87 Melf 1PS75SB45 1PS59SB20 1PS76SB21 1PS59SB10 1PS76SB17 1PS59SB21 1PS79SB62 BAS70

    sod87 Melf

    Abstract: SOD882 1N5817 MELF 1PS74SB43 1PS59SB10 1n5819 melf 1PS76SB62 1PS76SB21 BAS70 MELF SOD532
    Text: Schottky diodes Selection guide With over 13% market share in terms of quantity, Philips is among the top five worldwide suppliers of small signal diodes and transistors.We offer a very broad portfolio – from conventional leaded products to the latest ultra-small lead-free


    Original     		PDF

    BF1201A

    Abstract: bf1211 dual gate mosfet bfq34 application note SA636 BFG480W BF862 AM LNA BFR10 SA676 Reliability SA612A SA614A
    Text: RF Products RF Products 241 RF Access Systems CATV RF Hybrid Amplifiers Type Number Description Frequency Range Gain dB Slope (dB) FL S11/S22 CTB XMOD CSO @Ch @Vo (dBmV) F @fmax Itot (mA) BGS67A 65 MHz, 25.5 dB gain Reverse Amplifier, 12 V 5 - 65 25 - 26


    Original     		PDF S11/S22 BGS67A BGY68 BGY66B BGY67 13MHz 900MHz SA8027 TSSOP20) 44MHz BF1201A bf1211 dual gate mosfet bfq34 application note SA636 BFG480W BF862 AM LNA BFR10 SA676 Reliability SA612A SA614A

    tcxo philips 4322

    Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
    Text: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The


    Original     		PDF

    BFQ67W

    Abstract: PMBT3640 PMBTH10 BFM520
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Wideband Transistors 1997 Nov 24 File under Discrete Semiconductors, SC14 Philips Semiconductors RF Wideband Transistors Selection guide FIRST GENERATION NPN WIDEBAND TRANSISTORS fT up to 3.5 GHz PACKAGE


    Original     		PDF OT143 OT223 OT323 BFT25 BF747 BF547 BF547W BFS17 BFS17W BF689K BFQ67W PMBT3640 PMBTH10 BFM520

    mO2 marking transistor

    Abstract: fet dual gate sot143 BF901 marking 550 sot143 SS MARKING CODE BF901R n-channel dual gate MAM040 PHILIPS dual gate mosfets DUAL GATE MOSFET VHF AMPLIFIER N-CHANNEL
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF901; BF901R Silicon n-channel dual gate MOS-FETs Product specification File under Discrete Semiconductors, SC07 November 1992 Philips Semiconductors Product specification Silicon n-channel dual gate MOS-FETs FEATURES BF901; BF901R


    Original     		PDF BF901; BF901R OT143 OT143R mO2 marking transistor fet dual gate sot143 BF901 marking 550 sot143 SS MARKING CODE BF901R n-channel dual gate MAM040 PHILIPS dual gate mosfets DUAL GATE MOSFET VHF AMPLIFIER N-CHANNEL

    PUMH20

    Abstract: PBLS4004Y PUMD30 PUMH14 PUMB15 PUMH30 PMD2001D PBLS4003D PUMH15 PUMD9
    Text: Automotive small-signal discretes solutions Drive the future with our innovative portfolio Automotive Simplifying design through increased functionality By delivering more functionality from individual products, we help to cut development times. With just a few small-signal discretes several


    Original     		PDF

    Motorola transistor smd marking codes

    Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
    Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.


    Original     		PDF

    2SK170BL

    Abstract: 2SK170GR 2SK163 BFG424F BFG480W 2sk162 hitachi BB155 2N4393 2SK508 2SK210GR
    Text: RF マニュアル 第5版 RF 製品の製品およびデザインマニュアル 2004 年 10 月 Semiconductors RF マニュアル 第 5 版 Philips Semiconductors RF 製品の製品およびデザイン・マニュアル  Koninklijke Philips Electronics N.V. 2004


    Original     		PDF

    BFG591 amplifier

    Abstract: BFM520 BFM505 BFC505 BFC520 BFE505 sot172 Philips Semiconductors Selection Guide bf763 S0T343
    Text: Philips Semiconductors RF Wideband Transistors Selection guide FIRST GENERATION NPN WIDEBAND TRANSISTORS fT up to 3.5 GHz PACKAGE fT / l c CURVE (see Fig.1 ) LEADED SOT54 SURFACE-MOUNT SOT23 SOT89 SOT143 SOT223 SOT323 (1) BFT25 (2) BF747 BF547 BF547W BFS17


    OCR Scan     		PDF BF689K BF763 BFT25 BF747 BF547 BFS17 BFS17A BFR53 BFQ17 BFG17A BFG591 amplifier BFM520 BFM505 BFC505 BFC520 BFE505 sot172 Philips Semiconductors Selection Guide S0T343

    transistor 20107

    Abstract: transistor dk 50 PCD5042 bfg520w vco application note BFG591 Application Notes DK 51* transistor bfg520 antenna preamplifier BP547 bfg135 application note MPSH10 small amplifier
    Text: TARGET SYSTEMS PRODUCTS Function Type Description Cellular N AMPS /{E> TACS IS-54/-136 TDMA IS—95 CDMA Cordless GSM DCS1800 PCS PDC RF Amplifiers { SA5200 CTO CT1 SS X X Wireless Data DECT PHS 802.11 CDPD X X Gain block-1 GHZ PAGERS RF Front End SA611 1 GHz low voli LNA and mixer


    OCR Scan     		PDF SA5200 SA611 SA2420 SA621 SA1620 SA1921 UAA2073 UAA2077AM UAA2077BM UAA2077CM transistor 20107 transistor dk 50 PCD5042 bfg520w vco application note BFG591 Application Notes DK 51* transistor bfg520 antenna preamplifier BP547 bfg135 application note MPSH10 small amplifier

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors 3 31 0023545 075 bbS T Silicon n-channei dual gate MOS-FETs FE A T U R E S APX Product specification N ANER PHILIPS/DISCRETE L7E D BF901; BF901R Q U IC K R E F E R E N C E DATA • Intended for low voltage operation • Short channel transistor with high


    OCR Scan     		PDF BF901; BF901R BF901R OT143 OT143R

    philips bsd215

    Abstract: BST110 BF909WR
    Text: Philips Semiconductors Selection guide Small-signal Field-effect Transistors N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS CHARACTERISTICS TYPE NUMBER ± V Ds PACKAGE V Id Ig (mA) ly ts l ss “ V (P )G S min - max (mA) min. (mS) (V ) C r, PAGE (PF) Hi-fi amplifiers and AF equipment


    OCR Scan     		PDF BC264A BC264B BC264C BC264D BF245A BST120 BST122 PHP112 PHP125 PHC2102501 philips bsd215 BST110 BF909WR

    Untitled

    Abstract: No abstract text available
    Text: ' • bbS3^31 002355b 141 ■ APX Philips Semiconductors Product specification N AHER P H IL IP S /D IS C R E T E b?E D Dual gate MOS-FETs — BF908; BF908R QUICK REFERENCE DATA FEATURES SYMBOL • High IY„I dual gate MOS-FET • Short channel transistor with high


    OCR Scan     		PDF 002355b BF908; BF908R OT143 OT143R

    apx 1400 power amplifier

    Abstract: transistor marking M06 GHZ BF904 MARKING sg1 LT 424 marking 550 sot143 BF904R mb87 mb8753
    Text: • bbS3T31 0053551 LbT ■ APX Philips Semiconductors Preliminary specification N AnER p h i l i p s / d i s c r e t e b?E D Dual gate MOS-FETs FEATURES BF904; BF904R QUICK REFERENCE DATA ■ Specially designed for use at 5 V supply voltage • Short channel transistor with high


    OCR Scan     		PDF BF904; BF904R OT143 OT143R cros82 apx 1400 power amplifier transistor marking M06 GHZ BF904 MARKING sg1 LT 424 marking 550 sot143 BF904R mb87 mb8753

    MARKING CODE m33

    Abstract: BF909AR BF909A transistor m33 dual-gate
    Text: Philips Semiconductors Product specification BF909A; BF909AR Dual-gate MOS-FETs FEATURES • Specially designed for use at 5 V supply voltage • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio


    OCR Scan     		PDF BF909A; BF909AR OT143B OT143R OT143B OT143R MARKING CODE m33 BF909A transistor m33 dual-gate

    TRANSISTOR m29

    Abstract: MAM124 K 3053 TRANSISTOR
    Text: Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.


    OCR Scan     		PDF BF909; BF909R OT143R. TRANSISTOR m29 MAM124 K 3053 TRANSISTOR

    smd diode l4p

    Abstract: smd L4P smd diode marking code L41 smd code marking L4P sot-23 marking LC marking AA DIODE SOD C3 marking code sot 223 MV smd marking code SOT23 smd diode L43 SMD circuits MARKING CODE AA
    Text: 11 SMD Schottky Diodes SMD® Schottky Diodes Description Mechanical Data Philips Components Schottky barrier diodes are metal junction devices which combine the attributes of low forward voltage drop with fast switching times. Specific applications include battery back-up circuits, overshoot/ undershoot pro­


    OCR Scan     		PDF OT-23 OT-143 PMBD101 PMBD352 PMBD353 PRLL5817 PRLL5818 PRLL5819 OD-87 smd diode l4p smd L4P smd diode marking code L41 smd code marking L4P sot-23 marking LC marking AA DIODE SOD C3 marking code sot 223 MV smd marking code SOT23 smd diode L43 SMD circuits MARKING CODE AA

    K 3053 TRANSISTOR

    Abstract: TRANSISTOR m29 BF909 marking code dual gate mos BF909R marking 550 sot143 marking M29 PRs transistor BF909,235
    Text: Philips Semiconductors Product specification N-ohannel dual gate MOS-FETs FEATURES • Specially designed for use at 5 V supply voltage BF909; BF909R transistor consists of an amplifier M O S-FET with source and substrate interconnected and an internal bias circuit to


    OCR Scan     		PDF BF909; BF909R MBC845 OT143R. K 3053 TRANSISTOR TRANSISTOR m29 BF909 marking code dual gate mos BF909R marking 550 sot143 marking M29 PRs transistor BF909,235

    BF908R

    Abstract: BF908 dual-gate
    Text: Philips Semiconductors Product specification Dual-gate MOS-FETs BF908; BF908R FEATURES • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio 4 3 g2 • Low noise gain controlled amplifier up to 1 GHz.


    OCR Scan     		PDF BF908; BF908R OT143 OT143R 711G05b OT143. OT143R. 73ilDÃ BF908R BF908 dual-gate

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors • " bb53T31 0033551 bbT ■ APX Preliminary specification N AUER PHILIPS/DISCRETE b7E D Dual gate M O S -FE T s FEATURES BF904; BF904R Q U IC K R E F E R E N C E DATA • Specially designed for use at 5 V supply voltage • Short channel transistor with high


    OCR Scan     		PDF bb53T31 BF904; BF904R

    m02 marking amplifier

    Abstract: m02 marking transistor m02 marking gain marking 550 SOT143 PHILIPS 550 SOT143 sot143 code marking MS SS MARKING CODE BF901 BF901R
    Text: Philips Semiconductors 711082b Q0 t i7 5 1 7 4 b fl IH P H IN Product specification Silicon n-channel dual gate MOS-FETs FEATURES RPQni. ncom a BF901, BF901R QUICK REFERENCE DATA • Intended for low voltage operation SYMBOL TYP. MAX. UNIT drain-source voltage


    OCR Scan     		PDF 7110flSb BF901 BF901R BF901R OT143 OT143R m02 marking amplifier m02 marking transistor m02 marking gain marking 550 SOT143 PHILIPS 550 SOT143 sot143 code marking MS SS MARKING CODE BF901