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    PHEMT TRANSISTOR LP6836 Search Results

    PHEMT TRANSISTOR LP6836 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    PHEMT TRANSISTOR LP6836 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    LP6836P70-3

    Abstract: LP6836P70-1 LP6836-P70-1 LP6836P70 MIL-HDBK-263 pHEMT transistor 360
    Text: LP6836P70 PACKAGED MEDIUM POWER PHEMT • FEATURES ♦ 23 dBm Output Power at 1-dB Compression at 15 GHz ♦ 11.5 dB Power Gain at 15 GHz ♦ 50% Power-Added Efficiency • DESCRIPTION AND APPLICATIONS The LP6836P70 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility


    Original     		LP6836P70 LP6836P70 MIL-STD-1686 MIL-HDBK-263. LP6836P70-3 LP6836P70-1 LP6836-P70-1 MIL-HDBK-263 pHEMT transistor 360 PDF

    pHEMT transistor 360

    Abstract: LP6836 MIL-HDBK-263
    Text: Filtronic LP6836 Medium Power PHEMT Solid State DRAIN BOND PAD FEATURES • • • • +25 dBm Typical Power at 18 GHz 9.5 dB Typical Power Gain at 18 GHz Low Intermodulation Distortion 55% Power-Added-Efficiency at 18 GHz SOURCE BOND PAD x2 GATE BOND PAD


    Original     		LP6836 LP6836 DSS-029 pHEMT transistor 360 MIL-HDBK-263 PDF

    Untitled

    Abstract: No abstract text available
    Text: LP6836SOT343 PACKAGED MEDIUM POWER PHEMT • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz ♦ 20 dB Power Gain at 2 GHz, 10 dB at 6 GHz ♦ 70% Power-Added-Efficiency • DESCRIPTION AND APPLICATIONS The LP6836SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility


    Original     		LP6836SOT343 LP6836SOT343 LP6836 OT343 SC-70) MIL-STD-1686 MIL-HDBK-263. PDF

    LP6836

    Abstract: LP6836P70 LP6836SOT343 MIL-HDBK-263 RF TRANSISTOR 2GHZ
    Text: PRELIMINARY DATA SHEET LP6836SOT343 PACKAGED MEDIUM POWER PHEMT • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz ♦ 19 dB Power Gain at 2 GHz, 8 dB at 6 GHz ♦ 70% Power-Added-Efficiency • DESCRIPTION AND APPLICATIONS


    Original     		LP6836SOT343 LP6836P70 LP6836 OT343 SC-70) MIL-STD-1686 MIL-HDBK-263. LP6836SOT343 MIL-HDBK-263 RF TRANSISTOR 2GHZ PDF

    LP6836

    Abstract: LP6836SOT343 MIL-HDBK-263 RF TRANSISTOR 2GHZ pHEMT transistor 360
    Text: PRELIMINARY DATA SHEET LP6836SOT343 PACKAGED MEDIUM POWER PHEMT • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz ♦ 20 dB Power Gain at 2 GHz, 10 dB at 6 GHz ♦ 70% Power-Added-Efficiency • DESCRIPTION AND APPLICATIONS


    Original     		LP6836SOT343 LP6836SOT343 LP6836 OT343 SC-70) MIL-STD-1686 MIL-HDBK-263. MIL-HDBK-263 RF TRANSISTOR 2GHZ pHEMT transistor 360 PDF

    pHEMT transistor LP6836

    Abstract: LP6836 LP6836P100 filtronic Solid State
    Text: Filtronic LP6836P100 Packaged 0.25W Power PHEMT Solid State FEATURES • • • • • GATE +24.5 dBm Typical Power at 15 GHz 12 dB Typical Power Gain at 15 GHz Low Intermodulation Distortion 55% Power-Added-Efficiency Color-coded by IDSS range SOURCE DRAIN


    Original     		LP6836P100 LP6836P100 LP6836orage, MIL-STD-1686 MILHDBK-263. DSS-031 pHEMT transistor LP6836 LP6836 filtronic Solid State PDF

    MIL-STD-1686

    Abstract: LP6836 MIL-HDBK-263 pHEMT transistor LP6836 high power transistor s-parameters
    Text: LP6836 MEDIUM POWER PHEMT • DRAIN BOND PAD FEATURES ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency SOURCE BOND PAD 2x GATE BOND PAD • DIE SIZE: 14.2X13.0 mils (360x330 µm) DIE THICKNESS: 3.9 mils (100 µm)


    Original     		LP6836 360x330 50x50 LP6836 MIL-STD-1686 MIL-HDBK-263 pHEMT transistor LP6836 high power transistor s-parameters PDF

    LP6836-P70-1

    Abstract: LP6836P70-1 pHEMT transistor LP6836 filtronic Solid State LP6836P70 LP6836 LP6836P70 LP6836-P70-2 LP6836-P70-3 LP6836P70-3
    Text: Filtronic LP6836P70 PACKAGED MEDIUM POWER PHEMT Solid State FEATURES • • • • • SOURCE +23.0 dBm Typical Power at 15 GHz 11.5 dB Typical Power Gain at 15 GHz Low Intermodulation Distortion 50% Power-Added-Efficiency Color-coded by IDSS range DRAIN


    Original     		LP6836P70 LP6836P70 MIL-STD-1686 MILHDBK-263. P70-52 DSS-030 LP6836-P70-1 LP6836P70-1 pHEMT transistor LP6836 filtronic Solid State LP6836P70 LP6836 LP6836-P70-2 LP6836-P70-3 LP6836P70-3 PDF