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    LP6836SOT343 Search Results

    LP6836SOT343 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    LP6836SOT343 Filtronic PACKAGED MEDIUM POWER PHEMT Original PDF
    LP6836SOT343 Filtronic PACKAGED MEDIUM POWER PHEMT Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: LP6836SOT343 PACKAGED MEDIUM POWER PHEMT • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz ♦ 20 dB Power Gain at 2 GHz, 10 dB at 6 GHz ♦ 70% Power-Added-Efficiency • DESCRIPTION AND APPLICATIONS The LP6836SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility


    Original     		PDF LP6836SOT343 LP6836SOT343 LP6836 OT343 SC-70) MIL-STD-1686 MIL-HDBK-263.

    LP6836

    Abstract: LP6836P70 LP6836SOT343 MIL-HDBK-263 RF TRANSISTOR 2GHZ
    Text: PRELIMINARY DATA SHEET LP6836SOT343 PACKAGED MEDIUM POWER PHEMT • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz ♦ 19 dB Power Gain at 2 GHz, 8 dB at 6 GHz ♦ 70% Power-Added-Efficiency • DESCRIPTION AND APPLICATIONS


    Original     		PDF LP6836SOT343 LP6836P70 LP6836 OT343 SC-70) MIL-STD-1686 MIL-HDBK-263. LP6836SOT343 MIL-HDBK-263 RF TRANSISTOR 2GHZ

    LP6836

    Abstract: LP6836SOT343 MIL-HDBK-263 RF TRANSISTOR 2GHZ pHEMT transistor 360
    Text: PRELIMINARY DATA SHEET LP6836SOT343 PACKAGED MEDIUM POWER PHEMT • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz ♦ 20 dB Power Gain at 2 GHz, 10 dB at 6 GHz ♦ 70% Power-Added-Efficiency • DESCRIPTION AND APPLICATIONS


    Original     		PDF LP6836SOT343 LP6836SOT343 LP6836 OT343 SC-70) MIL-STD-1686 MIL-HDBK-263. MIL-HDBK-263 RF TRANSISTOR 2GHZ pHEMT transistor 360