LNK406EG
Abstract: DER-256 EER2510 LNK406 Transformer EER25 EER25 EER25 core transformer construction plus725 diode 1n4007 melf smd schematic diagram t8 smd
Text: Design Example Report Title High Efficiency ≥85% , High Power Factor (>0.9) 15 W T8 Isolated LED Driver Using LinkSwitchTM-PH LNK406EG Specification 90 VAC – 265 VAC Input; 50 V, 0.3 A Output Application LED Driver for T8 Lamp Author Applications Engineering Department
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LNK406EG
DER-256
LNK406EG
DER-256
EER2510
LNK406
Transformer EER25
EER25
EER25 core transformer construction
plus725
diode 1n4007 melf smd
schematic diagram t8 smd
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TB200
Abstract: amidon BN-61-202 c12 ph zener diode
Text: February 1, 2012 TB200 Frequency=20-1000MHz Pout=60W Gain=10dB Vds=28.0Vdc Idq=1.0A LB401 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com February 1, 2012 20 100 18 90 15 80 13 70 10 60 8 50 5 40 3 30 20 1000 100 200
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TB200
20-1000MHz
LB401
TB200
28Vdc,
20Mhz
200B104KW50X
100B100GW500X
amidon BN-61-202
c12 ph zener diode
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BY228ph
Abstract: BYV26E PH 1N5062 ph BY228 PH 1N4007 sod87 za109ts BYW95C PH BYR245 sj 1a0 SOD87 1N4007
Text: DISCRETE SEMICONDUCTORS Marking codes Power Diodes Supersedes data of 2004 Apr 27 2004 Jun 11 Philips Semiconductors Product specification Power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE PACKAGE TYPE NUMBER MARKING CODE PACKAGE
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1N4001G
1N4001
BY8106
OD61AD
1N4002G
1N4002
BY8108
OD61AE
1N4003G
1N4003
BY228ph
BYV26E PH
1N5062 ph
BY228 PH
1N4007 sod87
za109ts
BYW95C PH
BYR245
sj 1a0
SOD87 1N4007
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PH 33D
Abstract: PH 33G BYW95C PH BYM26C PH BYV26E PH BYW96E PH BYV96E ph 33D-PH 33d ph V10-40
Text: DISCRETE SEMICONDUCTORS Marking codes Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Marking codes TYPE NUMBER TO MARKING CODE MARKING CODE PACKAGE BY558 BY558 PH SOD115 SOD57 BY578 BY578 PH SOD115 SOD57 BY584 orange SOD61A 1N4004 PH SOD57 BY614
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BY558
BY558
OD115
BY578
BY578
BY584
OD61A
1N4004
BY614
PH 33D
PH 33G
BYW95C PH
BYM26C PH
BYV26E PH
BYW96E PH
BYV96E ph
33D-PH
33d ph
V10-40
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c 10 ph diode
Abstract: GL710
Text: PRODUCT INFORMATION APPLICATIONS: OA equipment Audio visual equipment Home appliances Telecommunication equipment terminal Measuring equipment Tooling machines Computers GL710 Infrared Emitting Diode IrDA Components Group ABSOLUTE MAXIMUM RATINGS PARAMETER
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GL710
SMT98136
c 10 ph diode
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C5V6 ph
Abstract: C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH
Text: MARKING CODES contents page Type number to marking code cross reference 2 Marking code to type number cross reference 21 Philips Semiconductors Small-signal and Medium-power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER
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1N821
1N4733A
1N821A
1N4734A
1N823
1N4735A
1N823A
C5V6 ph
C18 ph
PH C5V1
philips diode PH 33D
C8V2 PH
C10 PH
c4v7 ph
c5v1ph
c3v9ph
C33PH
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c 10 ph diode
Abstract: C 15 PH diode f 9222 l GL710
Text: PRODUCT INFORMATION APPLICATIONS: OA equipment Audio visual equipment Home appliances Telecommunication equipment terminal Measuring equipment Tooling machines Computers GL710 Infrared Emitting Diode IrDA Components Group ABSOLUTE MAXIMUM RATINGS PARAMETER
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GL710
CHARACTERISTICS4-7710
SMT98136
c 10 ph diode
C 15 PH diode
f 9222 l
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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IR2156 application
Abstract: C 13 PH Zener diode zener diode ph 48 C 12 PH Zener diode cfl circuit diagram of 12 volts IR2156 ZENER DIODE PH 5.1V IR2156S 12v ballast ic 1N4007
Text: Data Sheet No. PD60182-I IR2156 S & (PbF) BALLAST CONTROL IC • Programmable dead time • DC bus under-voltage reset • Shutdown pin with hysteresis • Internal 15.6V zener clamp diode on Vcc • Micropower startup (150µA) • Latch immunity and ESD protection
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PD60182-I
IR2156
14-Lead
IR2156
IR2156S
IR2156S
IR2156 application
C 13 PH Zener diode
zener diode ph 48
C 12 PH Zener diode
cfl circuit diagram of 12 volts
ZENER DIODE PH 5.1V
12v ballast ic
1N4007
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Chiller
Abstract: 532 nm laser diode Nd-yag NL220 invisible TEM00 c 10 ph diode diode marking 355 Tokyo Instruments
Text: S E R I E S HIGH ENERGY Diode Pumped Q-switched Nd:YAG Lasers FEATURES m 10 mJ at 1064 nm m 1 kHz repetition rate m High pulse energy stability m TEM00 shape beam m PIV version is available m Simple and robust all solid Diode pumped NL220 series lasers development as well as industrial
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TEM00
NL220
NL220
RS232
Chiller
532 nm laser diode
Nd-yag
invisible
c 10 ph diode
diode marking 355
Tokyo Instruments
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712 transistor smd sot23
Abstract: 33m ph diode smd transistor 718 diode PH 33m
Text: Value Code Inductor ph Code .01 .012 .015 .018 000 Oil 001 009 ph Code pFID. .10 .12 .15 .18 010 012 015 018 _ _ . _ .022 002 .22 022 _ _ - _ .027 007 .27 027 - _ .033 003 .33 033 _ - - - .039 009 .39 039 . _ _ - _ .047 004 .47 047 _ _ - _ .056 005 .56 056
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SX3512
SX5020
712 transistor smd sot23
33m ph diode
smd transistor 718
diode PH 33m
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IR-3210
Abstract: IR3210 PH 8452 IR321
Text: LASER COMPONENTS GmbH Address Wemer-von-Siemens-Str. 15 P.O. Box 1129 D -82140 Olching D-82133 Olching Ph o n e+49-8142-28640 • F a x +49-8142-286411 E-Mail: info@lasercomponents.com • Web: www.lasercomponents.com LASER COMPONENTS Datenblatt für Laser Components Bleichalkogenid - Diodenlaser
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D-82133
03-LI388HV-28.
IR-3210-GMP-20dB.
IR-3210.
388-HV-1-28.
15/Jul/2004
388-HV-1-
388-HV-1-28
D-82140
IR-3210
IR3210
PH 8452
IR321
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Untitled
Abstract: No abstract text available
Text: DIXYS DSS 20-0015 Power Schottky Rectifier 20 A 15V 0.33 V 'FAV V rrm VF Preliminary Data v RSM V rrm V V 15 15 Type TO-220 AC \ Ä DSS 20-0015B C (TAB A = Anode, C = Cathode , TAB = Cathode Symbol Test Conditions Maximum Ratings 35 20 A A 350 A lAS = tbd A; L = 180 pH; TVJ = 25°C; non repetitive
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O-220
20-0015B
D-68623
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MUR406
Abstract: motorola MUR440 MUR450
Text: 05/27/97 15:03 From Motorola Design-NET Ph : 602-244-359T Fax: 602-244-6693 MOTOROLA S C DIODES/OPTO m E D • b3b755S OOÛbHb? MUR405 MUR410 MUR415 MUR420 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA To Lynn Murphy IbH MUR430 MUR440 MUR450 MUR460 MUR420. MUR440 and MUFHBO
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602-244-359T
b3b755S
MUR405
MUR410
MUR415
MUR420
MUR430
MUR440
MUR450
MUR460
MUR406
motorola MUR440
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lt 6246
Abstract: z18a ECG6013 ECG5802 ECG6158 ECG586 ECG5801 ECG5804 ECG5882 Diode Z20
Text: PH IL IP S E C G INC Industrial Rectifiers P eak Reverse Voltage P R V Volts 50 3A 50 100 ECG5801 200 ECG5802 400 ECG5804 ECG5806 600 800 ECG5808 800 1000 ECG5809 1000 IFM Surge Tc at Rated lo (DC) Max 6A 6 A /22 A 12 A 15 A 16 A 20 A ECG5830 ECG5850 ECG5870
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ECG5800
ECG5830
ECG5850
ECG5870
ECG5940
ECG5892
ECG5912
ECG5831*
ECG5851*
ECG5871"
lt 6246
z18a
ECG6013
ECG5802
ECG6158
ECG586
ECG5801
ECG5804
ECG5882
Diode Z20
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452v
Abstract: No abstract text available
Text: Power Schottky Rectifier W V rrM Vf 16 A 3 5 -45 V 0.57 V Preliminary Data vtrriu V V 35 45 35 45 Type r DSS 16-0035A DSS 16-0045A Symbol Test Conditions ^FRMS ^FAV Tc = 160°C; rectangular, d = 0.5 ^FSM TVJ = 45°C; t p = 10 ms 50 Hz , sine lAS = 15 A; L = 180 pH;
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O-220
O-263
6-0035A
6-0045A
16-0035AS
16-0045AS
452v
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BUK455-600B
Abstract: BUK455-600A BUK455 T0220AB
Text: N AMER PH I L I P S / D I S C R E T E 2 5 E ^53=131 D 0 0 S D 5 15 1 PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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00SD515
BUK455-600A
BUK455-600B
T-21-13
BUK455
-600A
-600B
BUK455-600B
BUK455-600A
T0220AB
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Untitled
Abstract: No abstract text available
Text: OMS425 OMS525 OMS625 3 PH A SE, LOW VOLTAGE, LOW R DS on , M O SFET B R ID G E CIR CU IT IN A P LA ST IC PA CKA G E Three Phase, 250 Volt, 15 To 45 Amp Bridge With Current And Temperature Sensing In A Low Profile Package FEATURES • • • • • • Three Phase Power Switch Configuration
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OMS425
OMS525
OMS625
01D51
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Scans-002402
Abstract: 54ABT245 54ABT374
Text: MILITARY A B T PRODUCTS S ln lE E T 54ABT648 Octal bus transceiver/register, inverting 3-state Product specification April 15, 1992 Signetics Philips Semiconductors PHILIPS PH ILIPS / This Material Copyrighted By Its Respective Manufacturer P h ilip s S e m lc o n d u cto rs-S ig n e tic s M ilita ry A dvanced BiCMOS P roducts
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54ABT648
54ABT245
54ABT374
48mA/-24mA
500mA
Scans-002402
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55 volt switching power supply circuit
Abstract: Fairchild 2N709 2N709 max 550 transistor All similar transistor fairchild micrologic transistor CC 11 A transistor 60 volt fairchild transistor FD200
Text: • n>L N O V EM BER 1964 103, n>L 104 — FAIRCHILD PH YSICAL DIMENSIONS wide tem perature range. Typical propagation delay at 600 pf load capacitance and a fan-out of 15 is less than 50 nsecfrom -55°C to +125°C, and is le ss than 20 nsec at a load capacitance of 50 pf and a fan-out of 7 at any tem perature.
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W10TH
180ft
FD-200
2N709
55 volt switching power supply circuit
Fairchild 2N709
max 550 transistor
All similar transistor
fairchild micrologic
transistor CC 11 A
transistor 60 volt
fairchild transistor
FD200
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Untitled
Abstract: No abstract text available
Text: 0 O P T E K Product Bulletin OPB856 July 1996 Wide Gap Optical Sensor Type OPB856 1. W H ITE CASE [5 B LAC K CASE 15 P H 0 T 0 T R A N S I5 T 0 R LED 2. LE D T E R M IN A L MOLEX 0 2 - 0 6 - S 1 2 2 3. PH OTOTR AN SISTOR T E R M IN A L MOLEX 0 2 - 0 6 - 7 1 0 4
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OPB856
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C 12 PH Zener diode
Abstract: C 15 PH Zener diode ph 18 c zener diode zener diode 9,1v 0.5 w Zener PH 200 C 12 PH zener Zener PH ph 12 c zener diode ph 17 G zener diode zener diode si 18
Text: SEMICONDUCTOR TECHNICAL DATA KDZ2.0EV ~ 24EV ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. FEATURES • Small Package : ESC • Nominal Voltage Tolerance About ±6%. MAXIMUM RATINGS Ta=25°C
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KDZ20EV
KDZ22EV
KDZ24EV
20x20mm
C 12 PH Zener diode
C 15 PH Zener diode
ph 18 c zener diode
zener diode 9,1v 0.5 w
Zener PH 200
C 12 PH zener
Zener PH
ph 12 c zener diode
ph 17 G zener diode
zener diode si 18
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RS 329g
Abstract: LN26RP LN38GPPN LN303240UN 265r 430Y
Text: Visible Light Emitting Diodes • Point LEDs Round Type S hape Package No. Red T ype No. LN 21R P H L 05.0mm 01 LN 21R C PH L Red clear W h ite diffusion LN 31G PH L LN 31G C PH L LN 31G PH L(G ) Transparent LN 31G C PH L(G ) LN 21R P S L Red diffusion LN 31G PSL
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ALN240RCP
ALN221RPX
2050m
0151223U
0501199U
0501202U
0501229U
0801278U
5121149U
2561245U
RS 329g
LN26RP
LN38GPPN
LN303240UN
265r
430Y
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