PH 33D
Abstract: PH 33G BYW95C PH BYM26C PH BYV26E PH BYW96E PH BYV96E ph 33D-PH 33d ph V10-40
Text: DISCRETE SEMICONDUCTORS Marking codes Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Marking codes TYPE NUMBER TO MARKING CODE MARKING CODE PACKAGE BY558 BY558 PH SOD115 SOD57 BY578 BY578 PH SOD115 SOD57 BY584 orange SOD61A 1N4004 PH SOD57 BY614
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BY558
BY558
OD115
BY578
BY578
BY584
OD61A
1N4004
BY614
PH 33D
PH 33G
BYW95C PH
BYM26C PH
BYV26E PH
BYW96E PH
BYV96E ph
33D-PH
33d ph
V10-40
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D2N50
Abstract: waw SOT323 d2n50e AN569 MTD2N50E motorola diode smb LT 33 diode surface mount SOT323 MOSFET PH mrac tai tien
Text: 07EOB4 G3:33 From Motorola Usign-NET Ph: 602+44+591 Fax: 602-244$~fi”ToRoLR ~~x-~~~Q~&”~NS MOTOROLA -r SEMICONDUCTOR TECHNICAL DATA Designerk~ Data Sheet TMOS E=FET~ Power Field Effect Wansistor DPAK for Surface Mount or L 02/1 1 tik d=umant by MTD2NWHD
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07EOB4
MTD2N50E
MK145BP,
D2N50
waw SOT323
d2n50e
AN569
MTD2N50E
motorola diode smb
LT 33 diode surface mount
SOT323 MOSFET PH
mrac
tai tien
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SPIF3811-HV096
Abstract: 8C639 G995P1U CALISTOGA-945PM gst5009 lf GST5009LF L448 foxconn quanta 14K22
Text: 5 4 3 2 1 EV@: Stuff when external VGA used SH@: Stuff when SATA HDD used PH@: Stuff when PATA HDD used ZC1 SYSTEM BLOCK DIAGRAM X'TAL 14.318MHZ Yonah/Merom 479 uFCPGA Clock Generator DVI ICS954310BGLF CPU Thermal Sensor P2 P25 P5 P3,P4 VRAM X 4 GDDR3 256MB/500MHZ
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318MHZ
ICS954310BGLF
256MB/500MHZ
10/100/1G
CALISTOGA-945PM
PSPR28
74HCT237
100K/F
2N7002
120K/F
SPIF3811-HV096
8C639
G995P1U
gst5009 lf
GST5009LF
L448
foxconn
quanta
14K22
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C5V6 ph
Abstract: C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH
Text: MARKING CODES contents page Type number to marking code cross reference 2 Marking code to type number cross reference 21 Philips Semiconductors Small-signal and Medium-power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER
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1N821
1N4733A
1N821A
1N4734A
1N823
1N4735A
1N823A
C5V6 ph
C18 ph
PH C5V1
philips diode PH 33D
C8V2 PH
C10 PH
c4v7 ph
c5v1ph
c3v9ph
C33PH
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BY228ph
Abstract: BYV26E PH 1N5062 ph BY228 PH 1N4007 sod87 za109ts BYW95C PH BYR245 sj 1a0 SOD87 1N4007
Text: DISCRETE SEMICONDUCTORS Marking codes Power Diodes Supersedes data of 2004 Apr 27 2004 Jun 11 Philips Semiconductors Product specification Power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE PACKAGE TYPE NUMBER MARKING CODE PACKAGE
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1N4001G
1N4001
BY8106
OD61AD
1N4002G
1N4002
BY8108
OD61AE
1N4003G
1N4003
BY228ph
BYV26E PH
1N5062 ph
BY228 PH
1N4007 sod87
za109ts
BYW95C PH
BYR245
sj 1a0
SOD87 1N4007
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS S&1EET BFQ236; BFQ236A NPN video transistors Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC05 Philips Semiconductors 1997 Oct 02 PH ILIPS PHILIPS Philips Semiconductors Product specification
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BFQ236;
BFQ236A
OT223
BFQ256
BFQ256A.
SCA55
127027/00/02/pp8
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LT 8001 P
Abstract: No abstract text available
Text: Philips Semiconductors_ ? 1 1 0 fl 5 b QQb b M1 M Mg M PH IN Triac Product specification BT134W series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in SOT223 envelopes suitable for surface mounting. They are intended for general purpose switching and
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BT134W
OT223
BT134W-
LT 8001 P
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xl 1225 transistor
Abstract: BFG135 amplifier transistor B 1184 BFG135 bfg135 scattering transistor d 1557 603-30-1 BFG135 A amplifier 2222 379 UBB300
Text: nu. e „ • Philips Semiconductors 1— 1 b 1353131 0024123 21b ■ APX AMER PH IL IP S/D IS CR ET E Product specification L7E D NPN 7 GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband
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BFG135
OT223
MSB002
OT223.
xl 1225 transistor
BFG135 amplifier
transistor B 1184
BFG135
bfg135 scattering
transistor d 1557
603-30-1
BFG135 A amplifier
2222 379
UBB300
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Untitled
Abstract: No abstract text available
Text: N AMER PH IL IPS/D ISCR ETE b'lE » bb53T31 0030733 b32 « A P X Product Specification Philips Semiconductors BUK482-100A PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface
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bb53T31
BUK482-100A
OT223
Fig-14
riin76ter
bb53R31
DD3D736
OT223.
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BT148W-400R
Abstract: 500R 600R BT148W
Text: I I hHE D • bbiSTSl 0G272Ô4 T22 H A P X _ J ^ BT148W SERIES N AUER PH IL IP S/D IS CRE TE THYRISTORS Glass-passivated, sensitive-gate thyristors in SOT-223 plastic envelopes suitable fo r surface mounting.
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0G272Ã
BT148W
OT-223
BT148W-400R
OT-223
500R
600R
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Untitled
Abstract: No abstract text available
Text: bb53T31 00237Tb bTT APX Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSP92 N AflER PH ILI PS/ DIS CR ETE b?E P. FEATURES QUICK REFERENCE DATA • Low threshold voltage VGS th • Direct interface to C-MOS, TTL,
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bb53T31
00237Tb
BSP92
OT223
B6693
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BFQ34
Abstract: BFQ34T BFG35 X3A-BFQ34
Text: Phïlip^Semîconductors _ bbSBTBl □□32SQ5 M AP X T M fl Product specification NPN 4 GHz wideband transistor crystal X3A-BFQ34 N AMER PHILIPS/DISCRETE DESCRIPTION b^E D M E C H A N IC A L DATA NPN crystal used in BFQ34T SOT37 , BFQ34 (SOT172) and BFG35 (SOT223). Crystals are supplied as whole
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bbS3T31
32SD5
X3A-BFQ34
BFQ34T
BFQ34
OT172)
BFG35
OT223)
X3A-BFQ34
URV-3-5-52/733
BFQ34
BFQ34T
BFG35
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transistor c 6073
Abstract: DD25DS BFG541 BF 331 TRANSISTORS transistor LC 945 lc 945 p transistor NPN TO 92 transistor abe 438 lc 945 transistor lc 945 p transistor NPN NR 4770 015
Text: Philips Semiconductors M N LbS3T31 AMER 0025033 TIM PH ILIPS /D ISCR ETE HIAPX Product specification b7E T> NPN 9 GHz wideband transistor FEATURES BFG541 PINNING • High power gain PIN • Low noise figure 1 • High transition frequency 2 base • Gold metallization ensures
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LbS3T31
E5D33
BFG541
OT223
OT2230
transistor c 6073
DD25DS
BFG541
BF 331 TRANSISTORS
transistor LC 945
lc 945 p transistor NPN TO 92
transistor abe 438
lc 945 transistor
lc 945 p transistor NPN
NR 4770 015
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BB313
Abstract: WO2 transistor MSA035 BCP69 WO-2
Text: • bbS3T31 QGEMS30 flee * A P X N AMER PH ILI PS/ DI SC RE TE B CP69 b?E ]> A_ SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a plastic microminiature envelope, intended for low-voltage, high-current LF applications. QUICK REFERENCE DATA Collector-emitter voltage VgE = 0
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bbS3T31
QGEMS30
BCP69
OT-223
BB313
WO2 transistor
MSA035
BCP69
WO-2
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BSP124
Abstract: MRC224 MTT 65 A 12 N depletion mode TRANSISTOR 436 Depletion
Text: Philips Semiconductors • 711Q6Eb Q Q b 7 fl 0 L 6H3 M PH I N Jroduct specification N-channel depletion mode vertical D-MOS transistor BSP124 QUICK REFERENCE DATA FEATURES PARAMETER MIN. MAX. UNIT - 250 V - 250 mA - 1.5 W open drain - 20 V lD = 20 mA; VGS = 0
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00b7a01
BSP124
OT223
OT223
711DflSti
BSP124
MRC224
MTT 65 A 12 N
depletion mode
TRANSISTOR 436
Depletion
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Untitled
Abstract: No abstract text available
Text: ^53=131 0025510 'i El H A P X BSP121 L7E » N AMER PH IL IP S/ DI SC R ET E 7 V. N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed fo r use as a line current interrupter in telephone sets and fo r application in relay, high-speed and
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BSP121
OT223
0Q25514
MCB331
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Untitled
Abstract: No abstract text available
Text: Product specification Ph ilip * S em iconductors BLU86 UHF power transistor F EA T U R ES • SM D encapsulation Q U ICK R E F E R E N C E DATA R F performance at Ts S 60 “C in a common emitter dass-B test circuit see note 1 . • Emitter-ballasting resistors for
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BLU86
OT223
bbS333
003SlbT
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Untitled
Abstract: No abstract text available
Text: PhHip^emiconductor^^ • bbSSTSl QD3BEDR b^3 ■APX^^^Pj22H£^£S£i2£2ii22 NPN 1 GHz video transistor crystal — — — — i— X3A-BFQ234 N AUER PH IL IP S/ D IS C R ET E D E S C R IP T IO N b'JE ]> M E C H A N IC A L DATA Crystal N PN crystal used in BFQ232 A (SOT32), BFQ235(A)
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Pj22HÂ
2ii22
X3A-BFQ234
BFQ232
BFQ235
BFQ236
OT223)
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transistor marking code 325
Abstract: BSP110 marking r8v
Text: • 1^53^31 0G25502 flS5 H A P X N AMER PHILIPS/ DIS CRETE BSP110 fc>7E D N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a m iniature SOT223 envelope and designed fo r use in telephone ringer circuits and fo r application w ith relay, high-speed and line transformer
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0G25502
BSP110
OT223
7Z94040
transistor marking code 325
BSP110
marking r8v
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BZV90
Abstract: BZV90-C24
Text: • 1^53^31 0Q2S7S1 SOb « A P X N AMER PHILIPS/DIS CRET E BZV90 SERIES b?E D SILICON PLANAR VOLTAGE REGULATOR DIODES Silicon planar voltage regulator diodes, In a SOT223 plastic envelope, intended fo r stabilization applica tions in thick and th in -film circuits.
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BZV90
OT223
OT223.
10ing
00257S1
BZV90-C24
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Untitled
Abstract: No abstract text available
Text: SM-8 COMPLEMENTARY MEDIUM POWER DARLINGTON TRANSISTORS ZDT6702 ISSUE 2 -F e b ru a ry 1997_ c ,ΠZ D B, c ,ΠZD C2 c r Z D b2 c2 IZ d ZD NPN e, Ez PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL - T6702 ABSOLUTE M A XIM U M RATINGS.
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ZDT6702
OT223)
T6702
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