PGAS1S12 Search Results

PGAS1S12 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
PGAS1S12		PerkinElmer Optoelectronics	Multiple Quantum Well Types 905 NM		Original	PDF

PGAS1S12 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
C1383 NPN transistor collector base and emitter Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,	Original	PDF	10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
FND-100Q Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.	Original	PDF	CAT0506P FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
Untitled Abstract: No abstract text available Text: DATASHEET Photon Detection PGA Series of Single-epi 905 nm Pulsed Semiconductor Lasers High Power Laser-Diode Family for Industrial Range Finding Key Features •      Peak power to 160 Watts Range of single element and stacked devices Overdrive capability up to 4 X	Original	PDF
PGAS1S09 Abstract: PGAS1S24 PGAS3S09 PGAU1S12 PGAS1S03 905nm Multi-Quantum Well Strained InGaAs Pulsed laser diode 905nm PGAS1S12 PGAS1S16 PGAS3S06 Text: This series of devices employs elements from 75µm wide single sources to four stacks of 600µm wide elements. Using standard InGaAs quantum wells grown for 905nm, this group of devices effectively replaces conventional double heterostructure GaAsAlGaAs diodes in that wavelength	Original	PDF	905nm, 100KHz DTS1104 PGAS1S09 PGAS1S24 PGAS3S09 PGAU1S12 PGAS1S03 905nm Multi-Quantum Well Strained InGaAs Pulsed laser diode 905nm PGAS1S12 PGAS1S16 PGAS3S06
Untitled Abstract: No abstract text available Text: w w w . o p t o e l e c t r o n i c s . p e r k i n e l m e r. c o m Peak power to 112 Watts at 150 ns pulse width Range of single element and stacked devices Up to 400% overdrive capability 25˚ beam divergence for single elements 83% power retention at 85˚C	Original	PDF	DTS0108
tpgas1s09 Abstract: TPGAS3S09 PGAS1S03 TPGAS2S09 PGAS1S24 TPGAS1S03 PGEW2S09 PGAS1S16 DPGAS1S09 C86119E Text: laser diodes Typical Applications • Laser range finding • LIDAR • High speed switching • Laser scanning • Fiber optic instrumentation • YAG laser simulation Description Pulsed Laser Diodes These devices range in wavelength from 850 nm to 1550 nm	Original	PDF	225x10 TPGAS1S09 TPGAS2S09 225x175 TPGAS3S09 225x325 tpgas1s09 TPGAS3S09 PGAS1S03 TPGAS2S09 PGAS1S24 TPGAS1S03 PGEW2S09 PGAS1S16 DPGAS1S09 C86119E