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    PGAS1S09

    Abstract: PGAS1S24 PGAS3S09 PGAU1S12 PGAS1S03 905nm Multi-Quantum Well Strained InGaAs Pulsed laser diode 905nm PGAS1S12 PGAS1S16 PGAS3S06
    Text: This series of devices employs elements from 75µm wide single sources to four stacks of 600µm wide elements. Using standard InGaAs quantum wells grown for 905nm, this group of devices effectively replaces conventional double heterostructure GaAsAlGaAs diodes in that wavelength


    Original     		PDF 905nm, 100KHz DTS1104 PGAS1S09 PGAS1S24 PGAS3S09 PGAU1S12 PGAS1S03 905nm Multi-Quantum Well Strained InGaAs Pulsed laser diode 905nm PGAS1S12 PGAS1S16 PGAS3S06

    Untitled

    Abstract: No abstract text available
    Text: w w w . o p t o e l e c t r o n i c s . p e r k i n e l m e r. c o m Peak power to 112 Watts at 150 ns pulse width Range of single element and stacked devices Up to 400% overdrive capability 25˚ beam divergence for single elements 83% power retention at 85˚C


    Original     		PDF DTS0108