Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs MULTI-CHIP MODULE MC-7891 1 GHz CATV 19 dB POWER DOUBLER AMPLIFIER DESCRIPTION The MC-7891 is a GaAs Multi-chip Module designed for use in CATV applications up to 1 GHz. This unit has low distortion, low noise figure and return loss across the entire frequency band.
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MC-7891
MC-7891
MC-7891-AZ
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marking 6-PIN PLASTIC TSON
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2176T5N 50 Ω TERMINATION TYPE HIGH POWER SPDT SWITCH FOR WiMAX DESCRIPTION The μPG2176T5N is a GaAs MMIC 50 Ω termination type high power SPDT Single Pole Double Throw switch which was developed for WiMAX. This device can operate frequency from 2.3 to 5.85 GHz, having the low insertion
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PG2176T5N
PG2176T5N
marking 6-PIN PLASTIC TSON
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NE3510M04-A
Abstract: ne3510 NE3510M04 GA-14 HS350 NE3510M04-T2 NE3510M04-T2-A PG10676EJ01V0DS sdars lna
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3510M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA NF = 0.35 dB TYP., Ga = 19 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA Reference only
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NE3510M04
NE3510M04-A
NE3510M04-T2
NE3510M04-T2-A
NE3510M04-A
ne3510
NE3510M04
GA-14
HS350
NE3510M04-T2
NE3510M04-T2-A
PG10676EJ01V0DS
sdars lna
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2176T5N 50 Ω TERMINATION TYPE HIGH POWER SPDT SWITCH FOR WiMAX DESCRIPTION The μPG2176T5N is a GaAs MMIC 50 Ω termination type high power SPDT Single Pole Double Throw switch which was developed for WiMAX. This device can operate frequency from 2.3 to 5.85 GHz, having the low insertion
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PG2176T5N
PG2176T5N
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NE3510M04
Abstract: NE3510M04-A HS350 NE3510M04-T2 NE3510M04-T2-A NE3510M04-T2B NE3510M04T2
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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NE3510M04
NE3510M04-A
NE3510M04-T2
M04mm
PG10676JJ02V0DS
IR260
NE3510M04
NE3510M04-A
HS350
NE3510M04-T2
NE3510M04-T2-A
NE3510M04-T2B
NE3510M04T2
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nec microwave
Abstract: NE3510 NEC Ga FET marking L NE3510M04-A NE3510M04 sdars HS350 NE3510M04-T2 NE3510M04-T2-A NE3510M04-T2B
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3510M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA NF = 0.35 dB TYP., Ga = 19 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA Reference only
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NE3510M04
NE3510M04-A
NE3510M04-T2
NE3510M04-T2-A
NE3510M04-T2B
NE3510M04-T2B-A
nec microwave
NE3510
NEC Ga FET marking L
NE3510M04-A
NE3510M04
sdars
HS350
NE3510M04-T2
NE3510M04-T2-A
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2176T5N 50 Ω TERMINATION TYPE HIGH POWER SPDT SWITCH FOR WiMAX DESCRIPTION The μPG2176T5N is a GaAs MMIC 50 Ω termination type high power SPDT Single Pole Double Throw switch which was developed for WiMAX. This device can operate frequency from 2.3 to 5.85 GHz, having the low insertion
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PG2176T5N
PG2176T5N
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marking 6-PIN PLASTIC TSON
Abstract: HS350 PG2176T5N
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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UPG2176T5N
Abstract: HS350 PG2176T5N
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2176T5N NON-REFLECTIVE HIGH POWER SPDT SWITCH FOR WiMAX DESCRIPTION The UPG2176T5N is a non-reflective 50Ω termination GaAs MMIC high power SPDT (Single Pole Double Throw) switch for WiMAX. This device can operate from frequency 2.3 to 5.85 GHz, with low insertion loss and high isolation.
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PG2176T5N
UPG2176T5N
HS350
PG2176T5N
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MC-7896
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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MC-7896A
Abstract: MC-7896 7896 NEC RF MODULE
Text: DATA SHEET GaAs MULTI-CHIP MODULE MC-7896 1 GHz CATV 27 dB POWER DOUBLER AMPLIFIER DESCRIPTION The MC-7896 is a GaAs Multi-chip Module designed for use in CATV applications up to 1 GHz. This unit has low distortion, low noise figure and return loss across the entire frequency band.
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MC-7896
MC-7896
MC-7896-AZ
MC-7896A
7896
NEC RF MODULE
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Untitled
Abstract: No abstract text available
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3510M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA NF = 0.35 dB TYP., Ga = 19 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA Reference only
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NE3510M04
NE3510M04-A
NE3510M04-T2
NE3510M04-T2-A
NE3510M04-T2B
NE3510M04-T2B-A
PG10676EJ02V0DS
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UPG2176
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT +PG2176T5N NON-REFLECTIVE HIGH POWER SPDT SWITCH FOR WiMAX DESCRIPTION The UPG2176T5N is a non-reflective 50ї termination GaAs MMIC high power SPDT (Single Pole Double Throw) switch for WiMAX. This device can operate from frequency 2.3 to 5.85 GHz, with low insertion loss and high isolation.
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PG2176T5N
UPG2176T5N
UPG2176
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PG2176T5N
Abstract: HS350 pg2176
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2176T5N 50 Ω TERMINATION TYPE HIGH POWER SPDT SWITCH FOR WiMAX DESCRIPTION The μPG2176T5N is a GaAs MMIC 50 Ω termination type high power SPDT Single Pole Double Throw switch which was developed for WiMAX. This device can operate frequency from 2.3 to 5.85 GHz, having the low insertion
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PG2176T5N
PG2176T5N
HS350
pg2176
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NE3510M04
Abstract: transistor RF S-parameters HS350 NE3510M04-A NE3510M04-T2 NE3510M04-T2-A
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NE3510M04-A
Abstract: NE3510M04 HS350 NE3510M04-T2 NE3510M04-T2-A
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3510M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA NF = 0.35 dB TYP., Ga = 19 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA Reference only
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NE3510M04
NE3510M0
NE3510M04-T2
NE3510M04-T2-A
NE3510M04-A
NE3510M04
HS350
NE3510M04-T2
NE3510M04-T2-A
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: GaAs INTEGRATED CIRCUIT PG2176T5N 50 TERMINATION TYPE HIGH POWER SPDT SWITCH FOR WiMAX DESCRIPTION The PG2176T5N is a GaAs MMIC 50 termination type high power SPDT Single Pole Double Throw switch which was developed for WiMAX. This device can operate frequency from 2.3 to 5.85 GHz, having the low insertion
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PG2176T5N
PG2176T5N
PG10677EJ03V0DS
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PG2020
Abstract: PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053
Text: i. 2 AMP - 160 VOLT 4 WATT 90 MHz TO-46 /// ¿samsivmgsm ? «? v TO-46 ! p-i-M' IfV-iV, • Linear hFE from 10 mA to 2 amps • I H 1 • H B R TO -4 6 TO -4 6 T O -4 6 TO -4 6 TO -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 TO -4 6
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2N4862
PG1001
PG1002
PG1003
PG1004
PG1005
PG1006
PG1007
PG1008
PG1009
PG2020
PG2011
TO46
PG1083
PG2102
2N4863
PG1050
PG1051
PG1010
PG1053
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PG1083
Abstract: PG1070 PG1067 PG1068 PG1069 PG1071 PG1072 PG1073 PG1074 PG1075
Text: 0043 59 2 A P I ELECTRONICS INC . — - Ampower Semiconductor Corp. 375 Kings Highway 11787 : Hauppauge, N. Y. 20 A ‘-e 14 A- loo^s^s oooomt t I-' INTERIM BULLETIN s 3 de Su b je ct to Revision Without Notice -APRIL 15, 1971 POWER TRANSISTOR ENGINEERING BULLETIN
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PG1067
PG1084,
PG1068
PG1069
PG1070
PG1071
PG1072
PG1073
PG1074
PG1083
PG1072
PG1075
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pg2004
Abstract: PG2011 pg2001 PG2006
Text: O a P I ELECTRONICS INC ^3 DE • G n ^ S I S 0000004 Q • Linear hFE from 10 mA to 2 amps • Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi i to 160 volts «■’ S T 1 B hF E hFE
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2N4862
PG1001
PG1002
PG1003
PG1004
PG1005
PG1006
PG1007
PG1008
PG1009
pg2004
PG2011
pg2001
PG2006
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50 watts 10mhz 4a
Abstract: API Electronics PG1083 PG1067 PG1068 PG1069 PG1070 PG1071 PG1072 PG1073
Text: 00 43592 A P I ELECTRONICS INC.- 2 0 A -Q1 4 é - I Ampower~Semiconductor Corp.’ '""ici i>F|□□43sc]e oooomh i I 375 Kings Highway IN T E R IM B U L L E T IN Subject to Revision W ithout Notice Hauppauge, N. Y. 11787 ¡PIRGO -A PR IL 15, 1971 POWER TRANSISTOR
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dd43sc
PG1067
PG1084,
PG1068
PG1069
PG1070
PG1071
PG1072
PG1073
50 watts 10mhz 4a
API Electronics
PG1083
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