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Catalog Datasheet	MFG & Type	Document Tags	PDF
marking 6-PIN PLASTIC TSON Abstract: HS350 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
Untitled Abstract: No abstract text available Text: GaAs HBT INTEGRATED CIRCUIT PG2314T5N POWER AMPLIFIER FOR BluetoothTM Class 1 DESCRIPTION The PG2314T5N is GaAs HBT MMIC for power amplifier which was developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed	Original	PG2314T5N PG2314T5N PG10624EJ02V0DS	PDF
MARKING G5D Abstract: HS350 PG2314T5N Text: GaAs HBT INTEGRATED CIRCUIT PG2314T5N POWER AMPLIFIER FOR BluetoothTM Class 1 DESCRIPTION The μPG2314T5N is GaAs HBT MMIC for power amplifier which was developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed in	Original	PG2314T5N PG2314T5N MARKING G5D HS350	PDF
MARKING G5D Abstract: PG2314T5N defects NEC 0745 PG10624EJ02V0DS HS350 Bluetooth class 1 Text: DATA SHEET GaAs HBT INTEGRATED CIRCUIT PG2314T5N POWER AMPLIFIER FOR Bluetooth TM Class 1 DESCRIPTION The μPG2314T5N is GaAs HBT MMIC for power amplifier which was developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed in	Original	PG2314T5N PG2314T5N MARKING G5D defects NEC 0745 PG10624EJ02V0DS HS350 Bluetooth class 1	PDF