PG1050 Search Results

PG1050 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
PG1050		Pirgo Electronics	Silicon Planar Power Transistors		Scan	PDF
PG1050		Pirgo Electronics	Power Transistors		Scan	PDF
PG1050		Pirgo Electronics	2 Amp NPN Silicon Planar Power Transistors		Scan	PDF

PG1050 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
10-PIN Abstract: HS350 VP215 BYPASS Capacitors NEC NEC MARKING TSON Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2027TQ L-BAND 4 W HIGH POWER SPDT SWITCH DESCRIPTION The µPG2027TQ is an L-band SPDT GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.0 GHz, having the low insertion loss and high	Original	PDF	PG2027TQ PG2027TQ 10-pin HS350 VP215 BYPASS Capacitors NEC NEC MARKING TSON
12-PIN Abstract: HS350 VP215 NEC RF Switch Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2227T5F L-BAND SP3T SWITCH DESCRIPTION The µPG2227T5F is a L-band SP3T GaAs FET switch witch was developed for CDMA/PCS/GPS triple mode digital cellular telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss	Original	PDF	PG2227T5F PG2227T5F 12-pin HS350 VP215 NEC RF Switch
HS350 Abstract: No abstract text available Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PDF	PG2053K PG10503JJ01V0DS IR260 HS350 L044-435-1588 HS350
12-PIN Abstract: HS350 VP215 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
10-PIN Abstract: HS350 VP215 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
20-PIN Abstract: HS350 PG2053K QFN 80 pin Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2053K GaAs MMIC DBS 4 x 2 IF SWITCH MATRIX FEATURES • HIGH ISOLATION : ISL = 38 dB TYP. @ f = 0.95 to 2.15 GHz, VCONT = +5.0 V/0 V • CONTROL VOLTAGE : VCONT H = +4.5 to +5.5 V (+5.0 V TYP.) : VCONT (L) = −0.5 to +0.5 V (0 V TYP.)	Original	PDF	PG2053K 20-PIN PG2053K-E3 G2053 HS350 PG2053K QFN 80 pin
20-PIN Abstract: HS350 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
PG2020 Abstract: PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053 Text: i. 2 AMP - 160 VOLT 4 WATT 90 MHz TO-46 /// ¿samsivmgsm ? «? v TO-46 ! p-i-M' IfV-iV, • Linear hFE from 10 mA to 2 amps • I H 1 • H B R TO -4 6 TO -4 6 T O -4 6 TO -4 6 TO -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 TO -4 6	OCR Scan	PDF	2N4862 PG1001 PG1002 PG1003 PG1004 PG1005 PG1006 PG1007 PG1008 PG1009 PG2020 PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053
2N4863 Abstract: PG1050 PG1051 PG1052 PG1053 PG1054 PG1055 PG1056 PG1057 PG1066 Text: •M k / 2 ÔA oi:4.4 P I ELE CT RO NICS INC Ho * ¡M T E R IM D E \| D 0 M 3 S T 2 0DDD144 S \| ». nELEXTRonics r ninc. B U L L E T IN S u b j e c t to R e v i s i o n ' :.T V * POWER TRANSISTOR ENGINEERING BULLETIN^ y e 3 3 p IW i t h o u t N o tic e -, o s "	OCR Scan	PDF	PG1050 PG1066, PG1051 PG1052 2N4863 PG1053 PG1054 PG1055 PG1056 PG1057 PG1066
pg2004 Abstract: PG2011 pg2001 PG2006 Text: O a P I ELECTRONICS INC ^3 DE • G n ^ S I S 0000004 Q • Linear hFE from 10 mA to 2 amps • Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi i to 160 volts «■’ S T 1 B hF E hFE	OCR Scan	PDF	2N4862 PG1001 PG1002 PG1003 PG1004 PG1005 PG1006 PG1007 PG1008 PG1009 pg2004 PG2011 pg2001 PG2006
2N4863 Abstract: PG1060 PG1050 PG1051 PG1052 PG1053 PG1054 PG1055 PG1056 PG1057 Text: 3* * / 20A- • 01:4.4 : - D P I ELECTRONICS INC 1 _ 20 1 IV I * DE \| □DM3S‘i2- 0D0D14M S „ . T E R I M 1 . : POWER TRANSISTOR ENGINEERING BULLETIN PIRGO ? _ -S u b je c t ~7Z3 3 . - . . . B U L L E T I N ^ to R e v i s i o n	OCR Scan	PDF	000014M PG1050 PG1066, PG1051 PG1052 2N4863 PG1053 PG1054 PG1055 PG1060 PG1056 PG1057
DARLINGTON 3A 100V npn Abstract: complementary npn-pnp power transistors 2N3766 PT7015 complementary npn-pnp PG2051 2N3767 TO66 PLASTIC package 7014 pnp and npn Text: 0043592 A P I A P I ELECTRONI CS !► ELECTRONICS INC 13 A00 6 7 I NC 13 A iiPRÄ ,U £ ELECTH C S'JQS DIARY DE 3 -0/_. - J □ D Ll 3 5 cia QDODDt,? E f~ - NPN and PNP Complementary Silicon Planar Power Transistors continued 2A B V ceo TO-66 TO-5 TO-46	OCR Scan	PDF	D435CIB 2N3766 2N3740 PG1050 PG2050 PG1001 PG2001 2N3767 2N3741 PG1051 DARLINGTON 3A 100V npn complementary npn-pnp power transistors PT7015 complementary npn-pnp PG2051 TO66 PLASTIC package 7014 pnp and npn
Untitled Abstract: No abstract text available Text: 0043592 A P I E LE CTRONICS INC _. _13A0Q67 3 VI ELECTRONICS INC 13 DE J □□43Scia □OOODb? 2 A P I U W NPN and PNP Complementary Silicon Planar Power Transistors continued . A bPRA ,UE ClECTR C S'JQS OlARY 2A TO-5 TO-66 BV ceo NPN	OCR Scan	PDF	13A0Q67 2N3766 2N3740 PG1050 PG2050 PG1001 PG2001 2N3767 2N3741 PG1051