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    PG105 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PG-105 New Japan Radio Cross Reference Guide Original PDF
    PG1050 Pirgo Electronics Silicon Planar Power Transistors Scan PDF
    PG1050 Pirgo Electronics Power Transistors Scan PDF
    PG1050 Pirgo Electronics 2 Amp NPN Silicon Planar Power Transistors Scan PDF
    PG1051 Pirgo Electronics Silicon Planar Power Transistors Scan PDF
    PG1051 Pirgo Electronics Power Transistors Scan PDF
    PG1051 Pirgo Electronics 2 Amp NPN Silicon Planar Power Transistors Scan PDF
    PG1052 Pirgo Electronics Silicon Planar Power Transistors Scan PDF
    PG1052 Pirgo Electronics Power Transistors Scan PDF
    PG1052 Pirgo Electronics 2 Amp NPN Silicon Planar Power Transistors Scan PDF
    PG1053 Pirgo Electronics Silicon Planar Power Transistors Scan PDF
    PG1053 Pirgo Electronics 2 Amp NPN Silicon Planar Power Transistors Scan PDF
    PG1054 Pirgo Electronics Silicon Planar Power Transistors Scan PDF
    PG1054 Pirgo Electronics 2 Amp NPN Silicon Planar Power Transistors Scan PDF
    PG1055 Pirgo Electronics Silicon Planar Power Transistors Scan PDF
    PG1055 Pirgo Electronics 2 Amp NPN Silicon Planar Power Transistors Scan PDF
    PG1056 Pirgo Electronics Silicon Planar Power Transistors Scan PDF
    PG1056 Pirgo Electronics 2 Amp NPN Silicon Planar Power Transistors Scan PDF
    PG1057 Pirgo Electronics 2 Amp NPN Silicon Planar Power Transistors Scan PDF
    PG1057 Pirgo Electronics Silicon Planar Power Transistors Scan PDF

    PG105 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    netxtreme programmer

    Abstract: BCM5701 PG105R S6D0 netxtreme 57xx gigabit controller BCM5704 BCM5715 broadcom BCM5715C BCM5788/M mac 7a8 transistor
    Text: Programmer’s Guide BCM57XX Host Programmer Interface Specification for the NetXtreme Family of Highly Integrated Media Access Controllers 57XX-PG105-R 5300 California Avenue • Irvine, CA 92617 • Phone: 949-926-5000 • Fax: 949-926-5203 01/29/08 BCM57XX


    Original     		PDF BCM57XX 57XX-PG105-R 57XX-PG104-R PG105 netxtreme programmer BCM5701 PG105R S6D0 netxtreme 57xx gigabit controller BCM5704 BCM5715 broadcom BCM5715C BCM5788/M mac 7a8 transistor

    MC-7894

    Abstract: MC-7894-AZ 7894
    Text: DATA SHEET GaAs MULTI-CHIP MODULE MC-7894 1 GHz CATV 24 dB POWER DOUBLER AMPLIFIER DESCRIPTION The MC-7894 is a GaAs Multi-chip Module designed for use in CATV applications up to 1 GHz. This unit has low distortion, low noise figure and return loss across the entire frequency band.


    Original     		PDF MC-7894 MC-7894 MC-7894-AZ MC-7894-AZ 7894

    nec 7893

    Abstract: 7893 MC-7893 MC-7893-AZ
    Text: DATA SHEET GaAs MULTI-CHIP MODULE MC-7893 1 GHz CATV 22 dB POWER DOUBLER AMPLIFIER DESCRIPTION The MC-7893 is a GaAs Multi-chip Module designed for use in CATV applications up to 1 GHz. This unit has low distortion, low noise figure and return loss across the entire frequency band.


    Original     		PDF MC-7893 MC-7893 MC-7893-AZ nec 7893 7893 MC-7893-AZ

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    HS350

    Abstract: No abstract text available
    Text: GaAs INTEGRATED CIRCUIT µPG2151T5K L, S-BAND SPDT SWITCH DESCRIPTION The µPG2151T5K is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from


    Original     		PDF PG2151T5K PG2151T5K 30anty HS350

    HS350

    Abstract: PG2155TB UPG2155TB UPG2155TB-A
    Text: GaAs INTEGRATED CIRCUIT UPG2155TB NEC’s L-BAND 4 W HIGH POWER SPDT SWITCH DESCRIPTION The µPG2155TB is an L-band SPDT GaAs FET switch developed for digital cellular or cordless telephone applications. The device can operate from 500 MHz to 2.5 GHz, with low insertion loss and high linearity.


    Original     		PDF UPG2155TB PG2155TB HS350 UPG2155TB UPG2155TB-A

    12-PIN

    Abstract: HS350 uPG2311T5F
    Text: GaAs INTEGRATED CIRCUIT µPG2311T5F GaAs MMIC LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The µPG2311T5F is a GaAs MMIC LNA for Car Navigation Systems and Handy GPS. This IC consists of two stage amplifiers and has high gain performance. FEATURES • High gain


    Original     		PDF PG2311T5F PG2311T5F 12-pin PG2311T5F-E2 PG2311T5F-E2-A HS350 uPG2311T5F

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    HS350

    Abstract: No abstract text available
    Text: GaAs INTEGRATED CIRCUIT µPG2158T5K L, S-BAND SPDT SWITCH DESCRIPTION The µPG2158T5K is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from


    Original     		PDF PG2158T5K PG2158T5K 40anty HS350

    ne3514s02

    Abstract: NE3514 NE3514S02-T1C s2p marking t1c rogers 5880 HS350 k-band amplifier
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz • Micro-X plastic S02 package APPLICATIONS


    Original     		PDF NE3514S02 NE3514S02-T1C NE3514S02-T1C-A NE3514S02-T1D NE3514S02-T1D-A NE3514S0anty ne3514s02 NE3514 NE3514S02-T1C s2p marking t1c rogers 5880 HS350 k-band amplifier

    NE350184C

    Abstract: NE350184C-T1A-A rogers 5880 rt/duroid 5880 17802A GA-13 HS350 NE350184C-T1 NE350184C-T1A k-band amplifier
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE350184C K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic 84C package APPLICATIONS


    Original     		PDF NE350184C NE350184C-T1 NE350184C-T1-A NE350184C-T1A NE350184C-T1A-A NE350anty NE350184C NE350184C-T1A-A rogers 5880 rt/duroid 5880 17802A GA-13 HS350 NE350184C-T1 NE350184C-T1A k-band amplifier

    SN0608098-GP

    Abstract: BQ24745RHDR-GP lcd 15.4 inverter EPSON C691 MAIN AMD RS780 tps51125 MEC5035 foxconn TPS51117PWR-GP BCM5761
    Text: 5 4 3 2 1 FOOSE UMA Schematics Document AMD 15.4" D D AMD Giffin CPU S1G2 AMD RS780 +SB700 C C 2008-01-04 REV : SB B B DY : Nopop Component 5761 : Use BCM5761E 5756 : Use BCM5756M B_TPM : Use LOM TPM C_TPM : Use China TPM <Variant Name> A A Wistron Corporation


    Original     		PDF RS780 SB700 BCM5761E BCM5756M ICS9LPRS474AKLFT 4X801 07237-SB BQ24745RHDR-GP SN0608098-GP BQ24745RHDR-GP lcd 15.4 inverter EPSON C691 MAIN AMD RS780 tps51125 MEC5035 foxconn TPS51117PWR-GP BCM5761

    nec 7893

    Abstract: MC-7893 MC-7893-AZ
    Text: GaAs MULTI-CHIP MODULE MC-7893 1 GHz CATV 22 dB POWER DOUBLER AMPLIFIER DESCRIPTION The MC-7893 is a GaAs Multi-chip Module designed for use in CATV applications up to 1 GHz. This unit has low distortion, low noise figure and return loss across the entire frequency band.


    Original     		PDF MC-7893 MC-7893 MC-7893-AZ nec 7893 MC-7893-AZ

    LG1237

    Abstract: ARINC 738 pressure sensor interface with 8051 airbus avionics block diagram LG1237 pressure transducer digital airspeed sensors LG-1237 Non SMART Pressure Transmitter airbus a320 block diagram GE90
    Text: A Matchbook-Sized "Smart" Pressure Transducer for Critical Applications Paul B. DuPuis Honeywell Military Avionics Division St. Louis Park, Minnesota 55416 612 542-5965 Abstract: Modern control systems strive to attain peak efficiency to minimize costs; reduce pollution; and


    Original     		PDF ISA/SP50-1992-236P, LG1237 ARINC 738 pressure sensor interface with 8051 airbus avionics block diagram LG1237 pressure transducer digital airspeed sensors LG-1237 Non SMART Pressure Transmitter airbus a320 block diagram GE90

    NE3508M04-T2-A

    Abstract: HS350 NE3508M04 NE3508M04-A NE3508M04-T2 marking v79 ne3508
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package


    Original     		PDF NE3508M04 NE3508M04-A NE3508M04-T2 NE3508M04-T2-A NE3508M04-T2-A HS350 NE3508M04 NE3508M04-A NE3508M04-T2 marking v79 ne3508

    electronics semiconductor devices

    Abstract: UPG2155TB-A
    Text: GaAs INTEGRATED CIRCUIT UPG2155TB NEC’s L-BAND 4 W HIGH POWER SPDT SWITCH DESCRIPTION The µPG2155TB is an L-band SPDT GaAs FET switch developed for digital cellular or cordless telephone applications. The device can operate from 500 MHz to 2.5 GHz, with low insertion loss and high linearity.


    Original     		PDF UPG2155TB PG2155TB electronics semiconductor devices UPG2155TB-A

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2155TB L-BAND 4 W HIGH POWER SPDT SWITCH DESCRIPTION The µPG2155TB is an L-band SPDT GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss and high


    Original     		PDF PG2155TB PG2155TB

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2151T5K L, S-BAND SPDT SWITCH DESCRIPTION The µPG2151T5K is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from


    Original     		PDF PG2151T5K PG2151T5K

    Untitled

    Abstract: No abstract text available
    Text: GaAs MULTI-CHIP MODULE MC-7893 1 GHz CATV 22 dB POWER DOUBLER AMPLIFIER DESCRIPTION The MC-7893 is a GaAs Multi-chip Module designed for use in CATV applications up to 1 GHz. This unit has low distortion, low noise figure and return loss across the entire frequency band.


    Original     		PDF MC-7893 MC-7893 MC-7893-AZ

    PG2020

    Abstract: PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053
    Text: i. 2 AMP - 160 VOLT 4 WATT 90 MHz TO-46 /// ¿samsivmgsm ? «? v TO-46 ! p-i-M' IfV-iV, • Linear hFE from 10 mA to 2 amps • I H 1 • H B R TO -4 6 TO -4 6 T O -4 6 TO -4 6 TO -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 TO -4 6


    OCR Scan     		PDF 2N4862 PG1001 PG1002 PG1003 PG1004 PG1005 PG1006 PG1007 PG1008 PG1009 PG2020 PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053

    IC3208

    Abstract: P12315EJ2V0DS00
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT ¿PG105B-1 S-BAND LOW NOISE AMPLIFIER DESCRIPTION The ¿PG105B-1 GaAs Am plifier has a very low noise characteristics in the S-band. This device has 3 stages FET amplifiers to achieve high linear gain. This amplifier is ideal for microwave communication system and the


    OCR Scan     		PDF uPG105B-1 tPG105B-1 /xPG105B-1 IC3208 P12315EJ2V0DS00

    Untitled

    Abstract: No abstract text available
    Text: SEC S-BAND LOW NOISE AMPLIFIER OUTLINE DIMENSIONS FEATURES PG105B Units in mm OUTLINE B06 • VERY LOW NO ISE: NF ^ 2.2 dB at f = 2.7 to 4.2 GHz • H IG H POW ER GAIN: G p = 25 dB at f = 2.7 to 3.4 GHz • H IG H RELIABILITY • HER M ETIC PACKAGE DESCRIPTION


    OCR Scan     		PDF UPG105B PG105B

    pg2010

    Abstract: PG1083 PG2020 2N4862 PG1001 PG1002 PG1003 PG1004 PG1005 PG2001
    Text: Linear hFE from 10 mA to 2 amps Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi.„,i to 160 volts 'M h '.4 M T O —46 T O —46 T O —4 6 T O —4 6 T O —46 T O —4 6 S iîS $*‘v>


    OCR Scan     		PDF 2N4862 PG1001 PG1002 PG1003 PG1004 PG1005 PG1006 PG1007 PG1008 PG1009 pg2010 PG1083 PG2020 PG2001