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    Untitled

    Abstract: No abstract text available
    Text: PF5020, PF5024, PF5036 50A AVALANCHE 1/2” PRESS-FIT DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Leakage Low Cost High Surge Current Capability Typical IR less than 200nA A Anode + Mechanical Data     


    Original     		PDF PF5020, PF5024, PF5036 200nA DO-21, PF5020R PF5024R)

    Untitled

    Abstract: No abstract text available
    Text: PF5020 & PF5024 WTE POWER SEMICONDUCTORS Pb 50A AVALANCHE 1/2" PRESS-FIT DIODE Features  Diffused Junction  Low Leakage A  Low Cost Anode +  High Surge Current Capability  Typical IR less than 200nA 


    Original     		PDF PF5020 PF5024 200nA DO-21, PF5020R PF5024R)

    DO21

    Abstract: PF5020 DO-21 PF5024
    Text: PF5020 & PF5024 WTE POWER SEMICONDUCTORS Pb 50A AVALANCHE 1/2" PRESS-FIT DIODE Features ! Diffused Junction ! Low Leakage A ! Low Cost Anode + ! High Surge Current Capability ! Typical IR less than 200nA 


    Original     		PDF PF5020 PF5024 200nA DO-21, PF5020R PF5024R) DO-21 97inaccuracies. DO21 PF5020 DO-21 PF5024