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    PF014 Price and Stock

    Infineon Technologies AG IPF014N08NF2SATMA1

    TRENCH 40<-<100V PG-TO263-7
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    DigiKey IPF014N08NF2SATMA1 Reel 800 800
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    IPF014N08NF2SATMA1 Cut Tape 237 1
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    IPF014N08NF2SATMA1 Digi-Reel 1
    • 1 $4.69
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    Avnet Americas IPF014N08NF2SATMA1 Reel 800 12 Weeks 1
    • 1 $1.82663
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    Mouser Electronics IPF014N08NF2SATMA1 1,064
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    Chip1Stop IPF014N08NF2SATMA1 Cut Tape 800
    • 1 $4.68
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    Advanced Thermal Solutions Inc ATS025025006-PF014

    PINFIN HEATSINK 25X25X6.4MM
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    DigiKey ATS025025006-PF014 Bulk 100 1
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    Avnet Americas ATS025025006-PF014 Bulk 8 Weeks 100
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    TE Connectivity ZPF000000000014200

    Rectangular MIL Spec Connectors DBASC 76-61
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    Mouser Electronics ZPF000000000014200
    • 1 $312.72
    • 10 $289.76
    • 100 $279.37
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    TE Connectivity ZPF000000000014174

    Circular MIL Spec Tools, Hardware & Accessories DBASC 74-19
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    Mouser Electronics ZPF000000000014174
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    TE Connectivity ZPF000000000014197

    Rectangular MIL Spec Connectors DBASC 76-37 A134
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    Mouser Electronics ZPF000000000014197
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    Find more PF014 price and stock on Findchips.com

    PF014 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PF0140 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    PF0140 Hitachi Semiconductor 12V 3A 20mW MOSFET power amplifier module for GSM handy phone Scan PDF
    PF0140 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    PF0141 Hitachi Semiconductor MOS FET Power Amplifier Module for GSM Handy Phone Scan PDF
    PF0141 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    PF01410 Hitachi Semiconductor MOS FET Power Amplifier Module for GSM Handy Phone Original PDF
    PF01410A Hitachi Semiconductor MOS FET Power Amplifier Module for GSM Handy Phone Original PDF
    PF01410A Renesas Technology MOS FET Power Amplifier Module for GSM Handy Phone Original PDF
    PF01411 Hitachi Semiconductor MOS FET Power Amplifier Module for E-GSM Handy Phone Original PDF
    PF01411A Hitachi Semiconductor MOS FET Power Amplifier Module for E-GSM Handy Phone Original PDF
    PF01411B Hitachi Semiconductor MOS FET Power Amplifier Module for E-GSM Handy Phone Original PDF
    PF01412 Hitachi Semiconductor MOS FET Power Amplifier Module for E-GSM Handy Phone Original PDF
    PF01412A Hitachi Semiconductor MOS FET Power Amplifier Module for E-GSM Handy Phone Original PDF
    PF01412A Renesas Technology MOS FET Power Amplifier Module for E-GSM Handy Phone Original PDF
    PF01419B Renesas Technology MOS FET Power Amplifier Module for E-GSM Handy Phone Original PDF
    PF0143 Hitachi Semiconductor MOS FET Power Amplifier Module for GSM Handy Phone Scan PDF
    PF0143 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    PF0146 Hitachi Semiconductor MOS FET Power Amplifier Module for GSM Handy Phone Original PDF
    PF0147 Hitachi Semiconductor MOS FET Power Amplifier Module for GSM Handy Phone Original PDF

    PF014 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Hitachi DSA0099

    Abstract: pf01411b
    Text: PF01411B MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-434B Z 3rd Edition November 1, 1997 Application • For E-GSM class4 880 to 915 MHz • For 3.5 V nominal battery use Features • • • • High gain 3stage amplifier : 0 dBm input


    Original     		PDF PF01411B ADE-208-434B D-85622 Hitachi DSA0099 pf01411b

    PF01412A

    Abstract: Hitachi DSA00303
    Text: PF01412A MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-477B Z 3rd Edition February 1997 Application • For GSM class4 890 to 915 MHz • For 5.5V nominal DC/DC converter use Features • • • • High gain 3stage amplifier : 0 dBm input


    Original     		PDF PF01412A ADE-208-477B PF01412A Hitachi DSA00303

    PF01410A

    Abstract: Hitachi DSA00303
    Text: PF01410A MOS FET Power Amplifier Module for GSM Handy Phone ADE-208-424B Z Product Preview 3rd. Edition November 1997 Application • For GSM class4 890 to 915 MHz Features • • • • 4.8 V operation 2 stage amplifier Small package High efficiency : 45% Typ


    Original     		PDF PF01410A ADE-208-424B PF01410A Hitachi DSA00303

    pf0146

    Abstract: 1SS106 pf014 vapc 1ss106 application note Hitachi DSA00313
    Text: PF0146 MOS FET Power Amplifier Module for GSM Handy Phone ADE-208-285C Z 4th. Edition July 1996 Application For GSM class4 890 to 915 MHz Features • Small package: 1 cc, 3g • High efficiency: 50% Typ • High speed switching: 0.9 µsec Pin Arrangement


    Original     		PDF PF0146 ADE-208-285C BLO1RN1-A62-001 pf0146 1SS106 pf014 vapc 1ss106 application note Hitachi DSA00313

    BLO1RN1-A62-001

    Abstract: PF01412A Hitachi DSA00231 BLO1RN1A
    Text: PF01412A MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-477C Z 4th Edition Jan. 2001 Application • For GSM class4 890 MHz to 915 MHz • For 5.5 V nominal DC/DC converter use Features • • • • High gain 3stage amplifier : 0 dBm input


    Original     		PDF PF01412A ADE-208-477C BLO1RN1-A62-001 PF01412A Hitachi DSA00231 BLO1RN1A

    PF01411B

    Abstract: pf014 MOS FET Power Amplifier Module for E-GSM DSA003712
    Text: PF01411B MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-434B Z 3rd Edition Nov. 1997 Application • For E-GSM class4 880 to 915 MHz • For 3.5 V nominal battery use Features • • • • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc


    Original     		PDF PF01411B ADE-208-434B PF01411B pf014 MOS FET Power Amplifier Module for E-GSM DSA003712

    PF01410A

    Abstract: Hitachi DSA0099 T3845
    Text: PF01410A MOS FET Power Amplifier Module for GSM Handy Phone ADE-208-424B Z Product Preview, 3rd Edition November 1, 1997 Application • For GSM class4 890 to 915 MHz Features • • • • 4.8 V operation 2 stage amplifier Small package High efficiency : 45% Typ


    Original     		PDF PF01410A ADE-208-424B D-85622 PF01410A Hitachi DSA0099 T3845

    PF01419B

    Abstract: Hitachi DSA0099
    Text: PF01419B MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-686 Z 1st Edition Jan. 1, 1999 Application • For E-GSM class4 880 to 915 MHz • For 3.5 V nominal battery use Features • • • • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc


    Original     		PDF PF01419B ADE-208-686 10onents PF01419B Hitachi DSA0099

    PF01411A

    Abstract: BLO1RN1-A62 Hitachi DSA00231
    Text: PF01411A MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-433D Z 5th Edition Jan. 2001 Application • For E-GSM class4 880 MHz to 915 MHz • For 4.8 V nominal battery use Features • • • • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc


    Original     		PDF PF01411A ADE-208-433D PF01411A BLO1RN1-A62 Hitachi DSA00231

    Hitachi DSA0099

    Abstract: PF01411A
    Text: PF01411A MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-433C Z 4th. Edition February 1997 Application • For E-GSM class4 880 to 915MHz • For 4.8V nominal battery use Features • • • • High gain 3stage amplifier : 0dBm input Lead less thin & Small package : 2mm Max, 0.2cc


    Original     		PDF PF01411A ADE-208-433C 915MHz D-85622 Hitachi DSA0099 PF01411A

    Hitachi DSA0099

    Abstract: PF01412A ADE-208-477B
    Text: PF01412A MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-477B Z 3rd Edition February 1, 1997 Application • For GSM class4 890 to 915 MHz • For 5.5V nominal DC/DC converter use Features • • • • High gain 3stage amplifier : 0 dBm input


    Original     		PDF PF01412A ADE-208-477B D-85622 Hitachi DSA0099 PF01412A ADE-208-477B

    Untitled

    Abstract: No abstract text available
    Text: PF01419B MOS FET Power Amplifier Module for E-GSM Handy Phone HITACHI ADE-208-686 Z Ist Edition Jan. 1, 1999 Application • For E-GSM class4 880 to 915 MHz • For 3.5 V nominal battery use Features • High gain 3stage amplifier : 0 dBm input • Lead less thin & Small package : 2 mm Max, 0.2cc


    OCR Scan     		PDF PF01419B ADE-208-686 RF-K01

    PF0143

    Abstract: pf014 vapc Hitachi Scans-001
    Text: PF0143- Product Preview MOS FET Power Amplifier Module for GSM Handy Phone For GSM CLASS 4 8 9 0 -9 1 5 MHz OUTLINE DRAWING • FEATURES • High % typ. • High Speed Switching. 0.9 ps typ.


    OCR Scan     		PDF PF0143- 20sec. PF0143 pf014 vapc Hitachi Scans-001

    PF0131

    Abstract: PF0141 PF0144 PF0145 PF0148 PFS 3000 PF0310A PF0049A PF0147 PF0040
    Text: FET MODULE •High frequency amplifier Package Type No. cods RF-B2 PF0Q3Q PF0031 PF0032 PF0120 PF0121 PF0130 PF0131 PF0210 RF-B3 PF0040 PF0042 RF-E PFÓ02S PF0026 PF0027 PFQ04S PF0045A PF0047A PF0049A PFÖ065 PF0065A PF0O67A PF0144 PF0145 PF0146 PF0150 PF0231


    OCR Scan     		PDF PF0031 PF0032 PF0120 PF0121 PF0130 PF0131 PF0210 PF0040 PF0042 PF0026 PF0141 PF0144 PF0145 PF0148 PFS 3000 PF0310A PF0049A PF0147

    Untitled

    Abstract: No abstract text available
    Text: PF01411A MOS FET Power Amplifier Module for E-GSM Handy Phone HITACHI ADE-208-433C Z 4th. Edition February 1997 Application • For E-GSM class4 880 to 915MHz • For 4.8V nominal battery use Features • • • • High gain 3 stage amplifier : OdBm input


    OCR Scan     		PDF PF01411A ADE-208-433C 915MHz 20sec.

    Untitled

    Abstract: No abstract text available
    Text: PF0143- Product Preview MOS FET Power Amplifier Module for GSM Handy Phone For GSM CLASS 4 8 9 0 -9 1 5 MHz OUTLINE DRAWING • FEATURES • High Efficiency. 40% typ. • High Speed Switching. 0.9


    OCR Scan     		PDF PF0143--------------------------

    Untitled

    Abstract: No abstract text available
    Text: PF01411A MOS FET Power Amplifier Module for E-GSM Handy Phone HITACHI ADE-208-433C Z 4th. Edition February 1997 Application • For E-GSM class4 880 to 9 15MHz • For 4.8 V nominal battery use Features • • • • High gain 3stage amplifier : OdBm input


    OCR Scan     		PDF PF01411A 15MHz ADE-208-433C D-85622

    PF0144

    Abstract: 1ss106 application note 1SS106
    Text: PF0144 MOS FET Power Amplifier Module for GSM Handy Phone HITACHI Application Product preview Rev. 0 Sep. 1993 Pin Arrangement For G S M class4 890 to 915 M H z Features • Sm all p ackage 1 cc, 3 g • H igh efficiency 45% Typ • H igh speed sw itching 0.9 ps T^p


    OCR Scan     		PDF PF0144 PF0144 1ss106 application note 1SS106

    PF0146

    Abstract: No abstract text available
    Text: HITACHI PF0146 MOS FET Power Amplifier Module for GSM Handy Phone HITACHI Application For G SM class4 890 to 915 M H z Features • Sm all package: 1 cc, 3g • H igh efficiency: 50% Typ • H igh speed sw itching: 0.9 isec Pin Arrangement • R F -E 1 : Pin


    OCR Scan     		PDF PF0146 ADE-208-285C PF0146

    PF0146

    Abstract: Power Amplifier Module for GSM
    Text: PF0146-MOS FET Power Amplifier Module for GSM Handy Phone Application Pin Arrangement For GSM class4 890 to 915 MHz Features • Small package: lcc, 3g • High efficiency: 50%typ • High speed switching: 0.9 us Typ Internal Diagram C1 =0.01


    OCR Scan     		PDF PF0146----------------------MOS BL01RN1-A62-001 PF0146 PF0146 Power Amplifier Module for GSM

    almit

    Abstract: GSM RF module Power Amplifier Module for GSM PF0140 3lu10 VA-PC 10
    Text: H ITACH I PF0140 MOS FET Power Amplifier Module for GSM Handy Phone HITACHI ADE-208-462 Z 1st. Edition July 1996 Application For GSM class4 890 to 915 MHz Features • • • • Low power control current: 1.5 mA Typ High speed switching: 1.2 (Is Typ Wide power control range: 80 dB Typ


    OCR Scan     		PDF PF0140 ADE-208-462 PF0140_ BL01RN1-A62-001 915MH almit GSM RF module Power Amplifier Module for GSM PF0140 3lu10 VA-PC 10

    Untitled

    Abstract: No abstract text available
    Text: PF01411B MOS FET Power Amplifier Module for E-GSM Handy Phone HITACHI ADE-208-434B Z 3rd Edition November 1, 1997 Application • For E-GSM class4 880 to 915 MHz • For 3.5 V nominal battery use Features • High gain 3stage amplifier : 0 dBm input •


    OCR Scan     		PDF PF01411B ADE-208-434B

    Untitled

    Abstract: No abstract text available
    Text: PF01410A MOS FET Power Amplifier Module for GSM Handy Phone HITACHI ADE-208-424B Z Product Preview, 3rd Edition November 1, 1997 Application • For GSM class4 890 to 915 MHz Features • • • • 4.8 V operation 2 stage amplifier Small package High efficiency : 45% Typ


    OCR Scan     		PDF PF01410A ADE-208-424B

    almit

    Abstract: PF0140
    Text: PF0140 MOS FET Power Amplifier Module for GSM Handy Phone HITACHI Application Rev. 0 Sep. 1993 Pin Arrangement For GSM class4 890 to 915 MHz Features • • • • Low power control current: 1.5 mA Typ High speed switching: 1.2 j s TVp Wide power control range: 80 dB Typ


    OCR Scan     		PDF PF0140 PF0140 almit