PF0015 Search Results

PF0020

Abstract: PM4550C PU7456 TPM relay
Contextual Info: - 162 - f Ü € tt m € & m SS * * H 1 K I* YGS* V * ft M A (V) & * (X P d /P c h (A) * PF0015 H Ä 824— 849MHz PA MOS 12 DD 2 D PF0016 B aL 8 9 0 - 9 1 5 M H z PA MOS 12 DD 2 D PF0017 B aL 872— 905MHz PA MOS 12 DD 2 D PF0020 B aL 820— 850MHz PA

Contextual Info: PF0015 -MOS FET Power Amplifier Module for Handy Mobile Phone M O S FET Power Amplifier F O R A M P S 824 ~ 849 MHz O U T L IN E D R A W IN G • FEATURES • Small outline 12 x 45 x 6 .5 mni3 1 Low voltage operation 6 V > Low power control current 300 /¿A

Contextual Info: PF0015-MOS FET Power Amplifier Module for Handy Mobile Phone I O U TL IN E DRAW ING MOS FET Power Amplifier FOR AMPS 824 ~ 849 MHz • FEATURES • Sm all outline 12 x 4 5 x 6 .5 m m 3 • Low voltage operation 6 V • Low pow er control current 3 0 0 /iA

HITACHI PF0015

Abstract: G746 PF0015 CO 824 Hitachi Scans-001 shinetu
Contextual Info: PF0015-M OS FET Power A m p lifie r M o du le for Handy M o bile Phone I OUTLINE DRAWING MOS FET Power Amplifier FOR AMPS 824 ~ 849 MHz • FEATURES 1 S m a ll outline 12 x 4 5 x 6 .5 m m 3 1 Low voltage o p e ratio n 6 V 1 Low pow er control curren t 3 0 0 ¡xA

Contextual Info: RFOOI5B S e rie s M O S F E T P O W E R A M P L IF IE R • FEATURES • Small Package 12 X 45 X 6.5 mm3 • Low Voltage Operation 6V • Low Power Control Current 300 i.A • Good Stability of Load Change Load VSWR > 20 l. P i n / V ^ ORDERING INFORMATION

AM29PL141

Abstract: mc 5357 AM29100 LS002140 DFR00730 P124 S15-S8
Contextual Info: Am29PL141 Fuse P rogram m able C o n tro lle r FPC D is tin c tiv e C h a ra c te ris tic s Im plements com plex fuse program m able state machines 7 conditional inputs. 16 outputs 64 w ords ot 32-bit-wide m icroprogram memory ) diagnostics on chip Serial Shadow Register (SSR

12W 04 SMD MOSFET

Abstract: PF1002 PF0012 mosfet 12w smd PF0022 pf0017b 12W SMD MOSFET PF0027 pf0030 hitachi PF0010
Contextual Info: HITACHI 17 1.8 RF Power Modules These modules offer high efficiency along with excellent immunity to intermodulation distortion and load mismatch. MOSFET technology is well suited to use in the output stage of a cellular radio. Hitachi offers a range of MOSFET Power Amplifiers

2SK1845

Abstract: 3sk85 2SK408 equivalent 3SK1 3sk156 3sk217 3SK228 3SK103 2sc464 2SC3511
Contextual Info: HITACHI Ultra High Frequency Devices DATA BOOK H IT A C H I ADE-41 CONTENTS • GENERAL INFORMATION. . . . . . 5 Si Bipolar Transistors.

socket amd FM2

Abstract: amd socket fm2
Contextual Info: A m 29P L 141 Fuse Programmable C ontroller FPC Distinctive Characteristics • • • • • Implements complex fuse programmable state ma­ chines 7 conditional inputs. 16 outputs 64 words ot 32-bit-wide microprogram memory Serial Shadow Register (SSR ) diagnostics on chip

mosfet 12w smd

Abstract: 12W SMD MOSFET HITACHI PF0012 PF1002 SMD 12W MOSFET PF0012 Hitachi PF0030 PF0022 pf0030 hitachi PF0010
Contextual Info: HITACHI 17 1.8 RF Power Modules These modules offer high efficiency along with excellent immunity to intermodulation distortion and load mismatch. MOSFET technology is well suited to use in the output stage of a cellular radio. Hitachi offers a range of MOSFET Power Amplifiers