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    PED RELAY 11 Search Results

    PED RELAY 11 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UHD432R/B Rochester Electronics LLC UHD432 - Quad 2-Input NOR Power/Relay Driver Visit Rochester Electronics LLC Buy
    DRV777DR Texas Instruments 7-bit Integrated Motor and Relay Driver 16-SOIC -40 to 125 Visit Texas Instruments Buy
    ULN2003LVDR Texas Instruments Low Power 3.3V & 5V Relay Driver 16-SOIC -40 to 85 Visit Texas Instruments Buy
    DS3680D Texas Instruments Quad Telephone Relay Drivers 14-SOIC 0 to 70 Visit Texas Instruments Buy
    ULN2003LVPWR Texas Instruments Low Power 3.3V & 5V Relay Driver 16-TSSOP -40 to 85 Visit Texas Instruments Buy

    PED RELAY 11 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    9RV3

    Abstract: No abstract text available
    Text: DS-VA-GT1000-eng August , 2014 Data Sheet Glass Tube Flowmeter Model GT1000 Model GT1020 Model GT1024 Variable Area Industrial Glass Tube, Variable Area Flowmeters Description The Brooks GT 1000 combines ruggedness and simplicity in design to provide a versatile


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    DS-VA-GT1000-eng GT1000 GT1020 GT1024 9RV3 PDF

    PED relay cross reference

    Abstract: LR40787 schrack zt570524 relay Schrack ZT570524 Magnecraft w67 700-HC14Z24 Schrack ZT Allen Bradley 11-pin relay pin out diagram schrack relay cross reference pt570615 finder 15.21
    Text: Your Contact for Industrial Relays SECTION SOCKET COMPATIBLE AND FLANGE MOUNTED RELAYS 1 TO 30 AMPERES 1 SOCKET COMPATIBLE & FLANGE MOUNT RELAYS 782H 781 CERTIFIED CLASS 1 DIVISION 2 FOR HAZARDOUS LOCATIONS 782XBX/XDX RELAY SERIES ISO 9002 QS 9000 L W H 1.521 x 0.551 x 1.082


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    782XBX/XDX W21ACPX-2 136-62T3A1 R10E1 4-V185 4-V700 W67TRCSX-13 W67RPCX-2 W67RPCX-3 PED relay cross reference LR40787 schrack zt570524 relay Schrack ZT570524 Magnecraft w67 700-HC14Z24 Schrack ZT Allen Bradley 11-pin relay pin out diagram schrack relay cross reference pt570615 finder 15.21 PDF

    MT3809G

    Abstract: DEK13
    Text: Installation and Operation Manual X-VA-MT3809G-MT3810G-eng Part Number: 541B182AAG December, 2014 Models MT3809G & MT3810G Brooks Models MT3809G and MT3810G Metal Tube Variable Area Flowmeters Model MT3809G General Purpose Housing Model MT3809G Model MT3809G


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    X-VA-MT3809G-MT3810G-eng 541B182AAG MT3809G MT3810G MT3809G DEK13 PDF

    PED relay

    Abstract: VOLTAGE LEVEL RELAY SM 125 230 SJ 155 Diode SJ sj 45 Transistor SJ relay 12 volt 6a 100MA RELAY PE Relay SJ 02
    Text: Current and Voltage Controls 1-Phase AC/DC Current Control Types SJ 105, SJ 155 • Current control relay with absolute scale and internal shunt • Measuring ranges: SJ 105: 0.2 - 5 ADC SJ 155: 0.2 - 5 AAC • Knob-adjustable current level • Latching at set level possible


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    K3G250-AY11-C2

    Abstract: K3G310-BB49-02 engel
    Text: EC centrifugal fans – RadiPac version 2014-06 RadiPac: Now even more efficient The line of radial plug fans with GreenTech EC motor technology already All RadiPacs listed in the catalogue exceed the tougher new minimum established in the market has been expanded further. Our new product


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    PED relay

    Abstract: No abstract text available
    Text: Current and Voltage Controls 1-Phase AC/DC Current Control Types SJ 105, SJ 155 • Current control relay with absolute scale and internal shunt • Measuring ranges: SJ 105: 0.2 - 5 ADC SJ 155: 0.2 - 5 AAC • Knob-adjustable current level • Latching at set level possible


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    RXIL 2

    Abstract: asea time-lag relay RI asea relay RI ASEA RI panel and cubicles catalogue capacitor trip unit DIODE RK 69 RK-71 RXZ41 RK714
    Text: ASEA Capacitor unit type RXTCD 4 Used, fo r example, for tripp in g of circuit-breakers, during interruption of the auxiliary power supply Built-in circuits for controlling the charge of the capacitor Service life of capacitor, 10 years Catalogue RK 71-11 E


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    RK714 101-AA 007-AA S-721 RXIL 2 asea time-lag relay RI asea relay RI ASEA RI panel and cubicles catalogue capacitor trip unit DIODE RK 69 RK-71 RXZ41 PDF

    1RFD110

    Abstract: FD110 FD-111 diode of IRFD 110 IRFD 110 HARRIS IRFD110 irfd11 IRFD111
    Text: 3 H A R R IS IRFD110/111/112/113 IRFD110R/111R/112R/113R N -C hannel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package 4 -P IN D IP • 1A and 0.8A, 80V - 100V TOP VIEW • rDS on) = 0 .6 ÎÎ and 0 .8 fi • Single Pulse Avalanche Energy Rated*


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    IRFD110/111/112/113 IRFD110R/111R/112R/113R IRFD110, IRFD111, IRFD112, IRFD113 IRFD110R, IRFD111R, IRFD112R, IRFD113R 1RFD110 FD110 FD-111 diode of IRFD 110 IRFD 110 HARRIS IRFD110 irfd11 IRFD111 PDF

    Untitled

    Abstract: No abstract text available
    Text: • 4302271 0053742 ÜJ HARRIS 4Tb ■ August 1991 HAS 2N 6769 2 N 6770 N-Channel Enhancement-Mode Power MOS Field-Effect Transistors Package Features T O -2 0 4 A A • 11A and 12A, 450V - 500V BOTTOM VIEW • rQ3 |on = 0.5H and 0.40 • SOA is Power-Dissipation Limited


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    43D2271 2N6769, 2N6770 PDF

    automatic phase selector circuit diagram

    Abstract: RAAAK RAZOG PS 307 5A ASEA ABG 10 SELECTOR SWITCH ASEA ABG PS 307 10A asea razog
    Text: ASEA Catalogue RK 85-16 E Edition 1 April 1978 File R. Part 1 Reclosing relay type R a AAK For line*! vjith distance protection Single eiiot siigle-phase or three-phase reclosing ¡mended for y ss together with dis­ tance reiay svpg RAZO G but can be adapted to other distance relays


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    PDF

    1RFF113

    Abstract: FF113R IRFF111R 1RFF110
    Text: 3 H A R R I S IRFF110/ 111/112/113 IRFF110R/111R/112R/113R N -Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T0-205AF • 3.0A and 3.5A, 80V - 100V BOTTOM VIEW • rDS(on = O-ßf1 and 0 .8 ft • Single Pulse Avalanche Energy Rated*


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    IRFF110/ IRFF110R/111R/112R/113R T0-205AF 1RFF110, IRFF111, IRFF112, IRFF113 IRFF110R, IRFF111R, IRFF112R, 1RFF113 FF113R IRFF111R 1RFF110 PDF

    IRF232

    Abstract: IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF233 varo diode diode oa 90
    Text: Standard Power MOSFETs- IRF220, IRF221, IRF222, IRF223 I q . O BAIN CU RR EN T AMPERES Tc . CASE TEM PERATU RE <°C) F ig. 112 — T y p ic a l O n-R esistance V s. D ra in C u rre n t 20 40 Fig. 13 — M a x im u m D ra in C u rre n t V s. Case T e m p e ra tu re


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    IRF220, IRF221, IRF222, IRF223 08TAIN 50KSZ IRF232 IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF233 varo diode diode oa 90 PDF

    PED relay

    Abstract: anzac mixer anzac MD MD-425
    Text: X MODEL DOUBLE BALANCED MIXER MD-425 RF, LO 5-2000 MHz IF 10-600 MHz LO Power +7 dBm Relay Header MCL Model SRA-11 Replacement Guaranteed Specifications* From -55°C to +85°C F requ ency Range RF, LO Ports IF Port C o nversion Loss 5 - 1000 MHz 1000 - 2000 MHz


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    MD-425 SRA-11 PED relay anzac mixer anzac MD MD-425 PDF

    IRF9640

    Abstract: transistor IRF9640 IRF9641 IRF9642 irf9640 mosfet IRF9643 f9640
    Text: Rugged Power MOSFETs File Number IRF9640, IRF9641 IRF9642, IRF9643 2284 Avalanche-Energy-Rated P-Channel Power MOSFETs -9 A and -11 A, -150 V and -200 rosiom = 0.5 Q and 0.7 fi Features: • Single pulse avalanche energy rated m SOA is pow er-dissipation lim ite d


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    IRF9640, IRF9641 IRF9642, IRF9643 IRF9641, IRF9642 92CS43279 97CS-43280 IRF9640 transistor IRF9640 irf9640 mosfet IRF9643 f9640 PDF

    irf9241

    Abstract: No abstract text available
    Text: H a r r i IRF9240, IRF9241, IRF9242,1RF9243 s s e m i c o n d u c t o r -9A and -11 A, -150V and -200V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -9A a n d -11 A,-150V and-200V • High Input Impedance These are P-Channel enhancement mode silicon gate


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    IRF9240, IRF9241, IRF9242 1RF9243 -150V -200V, and-200V IRF9240 1RF9241, irf9241 PDF

    IRF9643

    Abstract: IRF9642 IRF9641
    Text: HARRIS IRF9640, IRF9641 IRF9642, IRF9643 Avalanche Energy Rated P-Channel Power MOSFETs August 1991 Package Features T 0 -2 2 0 A B • -9 A and -11 A, -1 5 0 V and -200V TOP VIEW • rDS ON = 0 .5 Cl and 0 .7 ft • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited


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    IRF9640, IRF9641 IRF9642, IRF9643 -200V IRF9641, IRF9642 IRF9643 F9643 PDF

    IRF9640

    Abstract: IRF1S9640 IIRF9640 IRF9643 IRF9642 IRF9641
    Text: HARRIS S E M IC O N D U C T O R IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM -9A and -11A, -150V and -200V, 0.5 and 0.7 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -9A and -11 A, -150V and -200V These are P-Channel enhancement mode silicon-gate


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    IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM -150V -200V, TA17522. IRF9640 IRF1S9640 IIRF9640 IRF9643 IRF9642 IRF9641 PDF

    f9240

    Abstract: irf9240r irf 44 n rf924
    Text: HARRIS IR F 9 2 40 , IR F9241 IRF9242, IRF9243 Avalanche Energy Rated P-Channel Power MOSFETs A ugust 1991 Features Package T O -2Û 4A A BOTTOM VIEW • -9A and -11A , -15 0 V and -200V • rDS ON = 0 .5 0 0 and 0 .7 ÎÎ • Single Pulse Avalanche Energy Rated


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    F9241 -200V IRF9240, IRF9241, IRF9242 IRF9243 conveRF9242, F9243 4J26Q f9240 irf9240r irf 44 n rf924 PDF

    Untitled

    Abstract: No abstract text available
    Text: Hormis S RFP50N05, RFG50N05 Semiconductor 7 50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 50A,50V These are N-Channel power MOSFET’S manufactured using the MegaFET process. This process, which uses fea­ ture sizes approaching those of LSI integrated circuits, gives


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    RFP50N05, RFG50N05 TB334 AN7254 AN7260 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFPG40 Semiconductor D ata S h eet Ju ly 1999 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET F ile N u m b er 2879.2 Features • 4.3A, 1000V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


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    IRFPG40 PDF

    F1S40N10

    Abstract: 40N10 TA9846 rfp40n10
    Text: HARRIS S E M I C O N D U C T O R RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 40A,100V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses fea­


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    RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM TA9846 040i2 AN7254 AN7260. F1S40N10 40N10 TA9846 rfp40n10 PDF

    F1S40N10

    Abstract: RFP40N10
    Text: H A R R IS sem iconductor R F G 4 0 N 10, R F P 4 0 N 10, R F 1S 4 0 N 10, R F 1S 4 0 N 10S M 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 40A,100V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses fea­


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    040i2 AN7254 AN7260. RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM F1S40N10 RFP40N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: i H s A e - R c o R - u IR FF 110, IRFF111, IRFF112, IRFF113 i s c t c 3.0A and 3.5A, 80V and 100V, 0.6 and 0.8 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.0A and 3.5A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate


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    IRFF111, IRFF112, IRFF113 IRFF110, RFF112, RFF113 PDF

    IRF9640

    Abstract: No abstract text available
    Text: H AFRFRIS S E M I C O N D U C T O R IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM -9A and -11 A, -150V and -200V, 0.5 and 0.7 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -9A a n d -11 A,-150V and-200V These are P-Channel enhancem ent mode silicon-gate


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    IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM -150V -200V, and-200V IRF9640 PDF