fx20smj3
Abstract: 4470 mosfet
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX20SMJ-3 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20SMJ-3 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2
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FX20SMJ-3
100ns
fx20smj3
4470 mosfet
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FX50SMJ-03
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX50SMJ-03 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX50SMJ-03 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4
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FX50SMJ-03
FX50SMJ-03
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fx6smj2
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX6SMJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX6SMJ-2 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2 20.0
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fx30smj03
Abstract: FX30SM
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX30SMJ-03 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30SMJ-03 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4
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FX30SMJ-03
fx30smj03
FX30SM
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fx3smj3
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX3SMJ-3 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX3SMJ-3 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2 20.0
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fx30smj2
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX30SMJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30SMJ-2 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2
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FX30SMJ-2
100ns
fx30smj2
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fx20smj2
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX20SMJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20SMJ-2 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2
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FX20SMJ-2
100ns
fx20smj2
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fx6smj06
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX6SMJ-06 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX6SMJ-06 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2
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FX6SMJ-06
fx6smj06
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fx30smj06
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX30SMJ-06 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30SMJ-06 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4
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FX30SMJ-06
fx30smj06
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FX50SMJ-2
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX50SMJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX50SMJ-2 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2
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FX50SMJ-2
100ns
FX50SMJ-2
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FX70SMJ-03
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX70SMJ-03 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX70SMJ-03 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4
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FX70SMJ-03
FX70SMJ-03
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FX30SMJ-3
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX30SMJ-3 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30SMJ-3 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2
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FX30SMJ-3
100ns
FX30SMJ-3
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FX20S
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX20SMJ-03 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20SMJ-03 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4
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FX20SMJ-03
FX20S
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fx6smj3
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX6SMJ-3 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX6SMJ-3 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2 20.0
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100ns
fx6smj3
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fx20smj-06
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX20SMJ-06 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20SMJ-06 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4
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FX20SMJ-06
fx20smj-06
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M34282E2GP
Abstract: R2h DIODE M34282M1 M34282M1-XXXGP M34282M2-XXXGP
Text: MITSUBISHI MICROCOMPUTERS 4282 Group RY A N IMI . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t No e par Som PRE L SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION • Timer Timer 1 . 8-bit timer
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r2l diode
Abstract: R2h DIODE M34282Mx-XXXGP
Text: MITSUBISHI MICROCOMPUTERS 4282 Group RY A N IMI . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t No e par Som PRE L SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION • Timer Timer 1 . 8-bit timer
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18P4G
Abstract: 20P2N-A M63815FP M63815KP M63815P
Text: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63815P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63815P/FP/KP are eight-circuit Single transistor arrays
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M63815P/FP/KP
300mA
M63815P/FP/KP
18P4G
20P2N-A
M63815FP
M63815KP
M63815P
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GP 015 DIODE
Abstract: GP 005 DIODE GP 250 DIODE M63813FP M63813GP M63813KP M63813P
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I M63813P/FP/GP/KP . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63813P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN
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M63813P/FP/GP/KP
300mA
M63813P/FP/GP/KP
GP 015 DIODE
GP 005 DIODE
GP 250 DIODE
M63813FP
M63813GP
M63813KP
M63813P
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I M63813P/FP/GP/KP . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63813P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN
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M63813P/FP/GP/KP
300mA
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Untitled
Abstract: No abstract text available
Text: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63816P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63816P/FP/KP are eight-circuit Single transistor arrays
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M63816P/FP/KP
300mA
M63816P/FP/KP
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18P4G
Abstract: 20P2N-A M63817FP M63817KP M63817P
Text: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63817P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63817P/FP/KP are eight-circuit Single transistor arrays
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M63817P/FP/KP
300mA
M63817P/FP/KP
18P4G
20P2N-A
M63817FP
M63817KP
M63817P
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BOX53C
Abstract: BOX53 box54 BDX54 BDX53B BDX53 BDX53A BDX53C BDX54A BDX54B
Text: ŒkMOS PEC DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS NPN BDX53 BDX53A BDX53B BDX53C .designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining VoltageVceo<sus = 4 5 V Min) - BDX53.BDX54
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BDX53
BDX54
BDX53A,
BDX54A
BDX53B
BDX54B
BDX53C,
BDX54C
BOX53C
BOX53
box54
BDX54
BDX53A
BDX53C
BDX54A
BDX54B
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transistor m1 sS 125
Abstract: No abstract text available
Text: - r - 3 f - S F 6 -1 0 0 R 06 KF EUPEC SEE » 34032^7 D G aaa? G bT Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Maximum rated values 600 U PEC 100 A 150 - 4 0 /+ 150 - 4 0 / + 125 tvjo p ts tg Icrm tp = 1ms 200 A P,ot
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