FX30SMJ-3
Abstract: PRSS0004ZB-A SC-65
Text: FX30SMJ-3 High-Speed Switching Use Pch Power MOS FET REJ03G1449-0200 Previous: MEJ02G0292-0101 Rev.2.00 Aug 07, 2006 Features • • • • • Drive voltage : 4 V VDSS : –150 V rDS(ON) (max) : 100 mΩ ID : –30 A Integrated Fast Recovery Diode (TYP.) : 100 ns
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FX30SMJ-3
REJ03G1449-0200
MEJ02G0292-0101)
PRSS0004ZB-A
FX30SMJ-3
PRSS0004ZB-A
SC-65
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Untitled
Abstract: No abstract text available
Text: FX30SMJ-3 High-Speed Switching Use Pch Power MOS FET REJ03G1449-0200 Previous: MEJ02G0292-0101 Rev.2.00 Aug 07, 2006 Features • • • • • Drive voltage : 4 V VDSS : –150 V rDS(ON) (max) : 100 mΩ ID : –30 A Integrated Fast Recovery Diode (TYP.) : 100 ns
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FX30SMJ-3
REJ03G1449-0200
MEJ02G0292-0101)
PRSS0004ZB-A
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FX30SMJ-3
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX30SMJ-3 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30SMJ-3 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2
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FX30SMJ-3
100ns
FX30SMJ-3
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fx30smj03
Abstract: FX30SM
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX30SMJ-03 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30SMJ-03 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4
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FX30SMJ-03
fx30smj03
FX30SM
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fx30smj2
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX30SMJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30SMJ-2 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2
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FX30SMJ-2
100ns
fx30smj2
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fx30smj06
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX30SMJ-06 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30SMJ-06 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4
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FX30SMJ-06
fx30smj06
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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1002ds
Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2
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2SC5998"
C5139
2SC5247
2SC5907
2SD1504
2SJ361
2SK439
2SK494
2SK3349
BCR5KM-12L
1002ds
6020v4
TRANSISTOR BJ 131-6
2SC 8550
transistor 2sc1417
HITACHI 08122B
transistor h945
6030v4
2SC 8050
25aaj
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rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
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REJ01G0001-0400
rjh3047
rjh3077
rjp3047
RJH3047DPK
rjp3049
rjp6065
rjp3053
RJP3042
smd code FX mosfet
RJP6055
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FX30SMJ-3
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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FX30SMJ-3
Abstract: PRSS0004ZB-A SC-65
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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rjp3053
Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5
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REJ16G0001-1900
rjp3053
RJP3063
rjp6065
RJP2557
RJP3057
RJH30
RQJ0301
RJP3065
rjk5020
RJK2009
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1002ds
Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5
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24EMP
BRC124ETP
BRC143ETP
BRC144ECM
CR3KM-12
FS10KM-6
FS10VS-6
FS16KM-6
FS16VS-6
HAT3017R
1002ds
4008ZB
2SC 9012
MP 1009 es
2SC 8050
20AAJ-8H
6020v4
2SC1417
2SC 8550
cr3as
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET FX30SMJ-2 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX30SMJ-2 OUTLINE DRAWING Dimensions in mm .4.5. 15.9 max 1.5 S S < >3.2 hf 4 T Î © 5.45 0.6 T P1 T • 4 V D R IV E •V dss .-1 0 0 V
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FX30SMJ-2
100ns
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET FX30SMJ-03 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX30SMJ-03 OUTLINE DRAWING Dim ensions in mm 4.5 15.9 max 1.5 < >3.2 -¥ ¥ * © 5.45 0.6 o ( • 4V DRIVE • V dss ©G ATE © D R A IN ©SOURCE © D R A IN o - . -3 0 V
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FX30SMJ-03
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"MOSFET A5 VNA
Abstract: 710023
Text: MITSUBISHI Pch POWER MOSFET FX30SMJ-3 ^ e V a<a s° HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 4 .5 . 15.9 m ax 1.5 | 3.2 mr ¥ b f * © 5 .4 5 0.6 0( • 4 V D R IV E • V ds s .-1 5 0 V
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FX30SMJ-3
FX30SMJ-3
-150V
10Omii
100ns
57KH2
571Q12
"MOSFET A5 VNA
710023
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FX50SM-2
Abstract: FX20KM-06 FX50VS06 FX6AS-06 fx6um-06 FX30KM06 marking Td FX3AS-06 FX6KM-06
Text: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Short Form Data Selector Guide Discrete MOSFET Low Voltage Trench Gate - 10.0V Driver Voltage p-channel MOSFETs Maximum Ratings, Tc = 25°C Device V qss •d VGSS Number (V)
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fx6as-03
fx6km-03
to-220fn
fx6um-03
to-220
fx6vs-03
to-220s
fx3as-06
fx3km-06
FX50SM-2
FX20KM-06
FX50VS06
FX6AS-06
fx6um-06
FX30KM06
marking Td
FX6KM-06
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FS10KM12
Abstract: FS10SM16A FS20KM-5 FS10SM18A FS7UM16A FS18SM10 CT40TMH FS7UM-16A FX6KM-06 CT60AM-20
Text: HMcnor Q lliC k Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Reference Guide Discrete IGBTs Strobe Flash Applications Product Features: □ Guaranteed Flash Life □ High Peak Current Capability □ Compact Package □ Specified Capacitor Ratings
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O-220S
CT20VS-8
CT20VSL-8
O-220C
O-220F
CT20TM-8
CT20AS-8
CT20ASL-8
CT20ASJ-8
CT20VM-8
FS10KM12
FS10SM16A
FS20KM-5
FS10SM18A
FS7UM16A
FS18SM10
CT40TMH
FS7UM-16A
FX6KM-06
CT60AM-20
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FX6VSJ-03
Abstract: fx6vsj-06 TO-220FN FX6VSJ06 FX30UMJ03 FX30KMJ-06 fx50smj
Text: < W E R E X Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S t l O f t F O T IT Ì D â t S Selector Guide Discrete MOSFET - Low Voltage Trench Gate 4.0V Driver Voltage p-channel MOSFETs Maximum Ratings, Tc = 25°C Device
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FX6ASJ-03
FX6KMJ-03
O-220FN
FX6UMJ-03
O-220
FX6VSJ-03
O-220S
FX20ASJ-03
FX20KMJ-03
fx6vsj-06
TO-220FN
FX6VSJ06
FX30UMJ03
FX30KMJ-06
fx50smj
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Untitled
Abstract: No abstract text available
Text: Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S h o rt FO D TI D 3 t3 Selector Guide Discrete MOSFET - Low Voltage Trench Gate (continued) 10.0V Driver Voltage p-channel MOSFETs Maximum Ratings, T, = 25°C Electrical Characteristics
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T0220FN
O-220
O-220S
TQ-220S
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Untitled
Abstract: No abstract text available
Text: Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S h O I* t F O f lH D â tS Selector Guide Discrete MOSFET - Low Voltage Trench Gate (continued) 2.5V Driver Voltage p-channel MOSFETs Electrical Characteristics Maximum Ratings, T, = 25°C
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O-220FN
O-220
O-220S
TQ-220S
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Untitled
Abstract: No abstract text available
Text: lO M fiR D T Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S l l O i t F O r iT I D d t d Selector Guide Discrete MOSFET - Low Voltage Trench Gate (continued) 4.0V Driver Voltage p-channel MOSFETs Maximum Ratings, T, = 25°C
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O-220FN
O-220
TQ-220S
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Untitled
Abstract: No abstract text available
Text: < W E R E X SflOrt FOTiTÌ Dâtâ Powerex, Inc., 200 HHIis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Selector Guide Discrete MOSFET Low Voltage Trench Gate - 2.5V Driver Voltage p-channel MOSFETs M axim um R atings, T c = 25°C Device VDSS
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FX6ASH-03
FX6KMH-03
FX6UMH-03
FX6VSH-03
O-220FN
O-220
O-220S
TQ-220S
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