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    PE42510A Price and Stock

    pSemi PE42510AMLI-Z

    IC RF SWITCH SPDT 2GHZ 32QFN
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    DigiKey PE42510AMLI-Z Cut Tape 1
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    PE42510AMLI-Z Digi-Reel 1
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    PE42510AMLI-Z Reel 3,000
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    PE42510A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PE42510AMLI-Z Peregrine Semiconductor RF Switches, RF/IF and RFID, IC RF SWITCH SPDT 50 OHM 32-QFN Original PDF

    PE42510A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE42510A SPDT High Power UltraCMOS Reflective RF Switch 30 - 2000 MHz Product Description The following specification defines an SPDT single pole double throw switch for use in cellular and other wireless applications. The PE42510A uses Peregrine’s UltraCMOS™


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    PDF PE42510A PE42510A

    PE42510

    Abstract: PE42510A QFN5X5-32LD PE42510AMLI 24 leads qfn 5x5 Circuit details of 3502 rf spdt mhz dbm PE42510AMLI-Z hotel SPDT T/R SWITCH
    Text: Product Specification PE42510A SPDT High Power UltraCMOS RF Switch 30 - 2000 MHz Product Description The following specification defines an SPDT single pole double throw switch for use in cellular and other wireless applications. The PE42510A uses Peregrine’s UltraCMOS™


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    PDF PE42510A PE42510A PE42510 QFN5X5-32LD PE42510AMLI 24 leads qfn 5x5 Circuit details of 3502 rf spdt mhz dbm PE42510AMLI-Z hotel SPDT T/R SWITCH

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE42510A SPDT High Power UltraCMOS Reflective RF Switch 30 - 2000 MHz ® •       50 Watt P1dB compression point 10 Watts <8:1 VSWR Normal Operation 29 dB Isolation @ 800 MHz <0.3 dB Insertion Loss at 800 MHz


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    PDF PE42510A 32-lead PE42510A

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE42510A SPDT High Power UltraCMOS Reflective RF Switch 30 - 2000 MHz Product Description The following specification defines an SPDT single pole double throw switch for use in cellular and other wireless applications. The PE42510A uses Peregrine’s UltraCMOS™


    Original
    PDF PE42510A PE42510A

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE42510A SPDT High Power UltraCMOS Reflective RF Switch 30 - 2000 MHz Product Description The following specification defines an SPDT single pole double throw switch for use in cellular and other wireless applications. The PE42510A uses Peregrine’s UltraCMOS®


    Original
    PDF PE42510A PE42510A

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE42510A SPDT High Power UltraCMOS Reflective RF Switch 30 - 2000 MHz Product Description Features • No blocking capacitors required The following specification defines an SPDT single pole double throw switch for use in cellular and other wireless


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    PDF PE42510A PE42510A

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE42820 UltraCMOS SPDT RF Switch 30 - 2700 MHz Product Description The PE42820 is a HaRP technology-enhanced high power reflective SPDT RF switch designed for use in mobile radio, relay replacement and other high performance wireless applications.


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    PDF PE42820 PE42820 PE42510A 32-lead DOC-13614-3

    PE42552

    Abstract: PE4251 F QFN 3X3 PE42440 pe4259 PE4257 PE4283 PE4210 PE42451 PE4246
    Text: Wireless RF Switches May 2010 Highly Rugged UltraCMOS Switches Extend Performance to 13.5 GHz High Linearity, 4 kV HBM ESD and CMOS Control Interface Ideal for Wireless Applications The Peregrine UltraCMOS™ RF switches feature high ESD tolerance, high linearity, high isolation and low insertion


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    PDF Tower10B-6 PE42552 PE4251 F QFN 3X3 PE42440 pe4259 PE4257 PE4283 PE4210 PE42451 PE4246

    PE42510A

    Abstract: PE42510 PE42650 PE42650A
    Text: NEWS RELEASE November 2008 Peregrine Semiconductor annonce une ligne de commutateurs RF de forte puissance Des circuits 50 Watts idéaux pour les applications radio mobiles Peregrine Semiconductor Corporation, fournisseur des circuits intégrés RF CMOS et à signaux mixtes


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    PDF PE42510A, PE42650A, PS138fr PE42510A PE42510 PE42650 PE42650A

    PE42510

    Abstract: PE42510A
    Text: NEWS RELEASE November 2008 HF-Leistungsschalter für 50 W von Peregrine Semiconductor Der HF-Schalter für den Mobilfunk San Diego, Kalifornien, USA, und München, Deutschland, 10. November 2008 – Die Peregrine Semiconductor Corporation, einer der führenden Anbieter hochleistungsfähiger HF-CMOS- und MixedSignal-ICs für die Kommunikationstechnik, stellt eine neue Linie hochleistungsfähiger HF-Schalter in


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    PDF PE42510A PE42650A PS138de PE42510 PE42510A

    QFN-32L 5X5

    Abstract: No abstract text available
    Text: Wireless RF Switches February 2009 Highly Rugged UltraCMOS Switches Extend Performance to 7.5 GHz High Linearity, 2 kV HBM ESD and CMOS Control Interface Ideal for Wireless Applications The Peregrine UltraCMOS™ RF switches feature high ESD tolerance, high linearity, high isolation and low insertion


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    PDF 4Hig73 10B-6 QFN-32L 5X5

    PE42359

    Abstract: PE42924 PE42920 PE42422 LGA 16L 4X4 qfn 3x3 dc-dc HARP QFN 5X5 12L PE42551
    Text: Wireless RF Switches January 2013 Highly Rugged UltraCMOS Switches Extend Performance to 13.5 GHz High Linearity, High HBM ESD and CMOS Control Interface Ideal for RF Applications The Peregrine UltraCMOS® RF switches feature high ESD tolerance and high linearity providing an exceptionally


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE42820 UltraCMOS SPDT RF Switch 30 - 2700 MHz Product Description The PE42820 is a HaRP technology-enhanced high power reflective SPDT RF switch designed for use in mobile radio, relay replacement and other high performance wireless applications.


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    PDF PE42820 PE42820 PE42510A 32-lead DOC-13614-3

    PE33632

    Abstract: PE33362 PE33632 die pe33382 PE42692 PE33362 die PE42510A1 PE4340 PE33631 PE42694
    Text: 2010 Product Selection Guide First Changing how you design RF. Forever. Edition Welcome to Peregrine Semiconductor UltraCMOS : The Green RF Process Technology Peregrine Semiconductor is a leading supplier of high-performance RF CMOS and mixed-signal communications ICs which are ideally suited for


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    PDF and940 10B-6 PE33632 PE33362 PE33632 die pe33382 PE42692 PE33362 die PE42510A1 PE4340 PE33631 PE42694

    PE42510A

    Abstract: PE42510
    Text: NEWS RELEASE November 2008 Peregrine Semiconductor presenterar nya RF-switchar för hög effekt 50 W-komponenter idealiska för mobila radiotillämpningar San Diego, Kalifornien, och München, Tyskland, 10 november 2008 - Peregrine Semiconductor Corporation, en ledande leverantör av RF CMOS- och blandsignal-baserade kommunikationskretsar av


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    PDF PE42510A PE42650A PS138se PE42510A PE42510

    PE42510A

    Abstract: PE43204 PE9309 PE97022 PE97042 PE97632 SYNTHESIZER FOR phased array SPDT FETs "stacked fets"
    Text: MAY 2009 The Sky’s the Limit: Silicon-on-Sapphire Processing Takes Flight in Defense and Space Systems by Dale Robinette, Peregrine Semiconductor Corporation S ince the invention of radios, military and space systems have been early adopters of wireless technology. As commercial use


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    PDF

    TAG 302-600

    Abstract: PE42924
    Text: Changing RF Design. Forever. TM 2013 Commercial Products Product Selection Guide First Edition Welcome to Peregrine Semiconductor UltraCMOS RF Process Technology Peregrine Semiconductor NASDAQ: PSMI is a fabless provider of high-performance radio-frequency (RF)


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    PDF

    PE42692

    Abstract: F QFN 3X3 PE42xx SPDT stacked FET PE42552 03 07 qfn 3x3 flip flap PE3336 PE3341 PE4230
    Text: 2009 Product Selection Guide First Changing how you design RF. Forever. Edition Welcome to Peregrine Semiconductor UltraCMOS RF Process Technology Peregrine Semiconductor is a leading supplier of high-performance RF CMOS and mixed-signal communications ICs which are ideally suited for


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    PDF high-re3940 10B-6 PE42692 F QFN 3X3 PE42xx SPDT stacked FET PE42552 03 07 qfn 3x3 flip flap PE3336 PE3341 PE4230

    solid state RF HIGH-POWER SWITCH

    Abstract: PE42510A PE42510
    Text: NEWS RELEASE EDITORIAL CONTACT: Mark Schrepferman, Director, Communications and Industrial Products Marketing 858 731-9512 9380 Carroll Park Drive San Diego, CA USA 92121 858-731-9400 Cindy Trotto, Marketing Communications Manager (602) 750-7203 Reader/Literature Inquiries:


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    PDF

    viasat

    Abstract: x-band power transistor 50W PE4150 PE42510A PE95420 Thales x-band X-band marine radar stacked FETs JTRS
    Text: JANUARY 2009 High Power UltraCMOS Switches and Mixers Satisfy Demanding Military Design Challenges by Dale Robinette and Mark Schrepferman, Peregrine Semiconductor Corp. D ramatically revamped several years ago, the Joint Tactical Radio System JTRS program looks to be on track


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    PDF com/articles/2008/2008 PE95420) viasat x-band power transistor 50W PE4150 PE42510A PE95420 Thales x-band X-band marine radar stacked FETs JTRS

    PE42510A

    Abstract: No abstract text available
    Text: LEHDISTÖTIEDOTE November 2008 Peregrine Semiconductor julkistaa uusia High-Power RF-kytkinpiirejä 50 Watin tehonkesto soveltuu erinomaisesti mobiiliradiosovelluksiin San Diego, Kalifornia Yhdysvallat ja München (Saksa), marraskuun 10., 2008 - Peregrine


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    PDF PE42510A PE42650A PS138fi PE42510A