PDM1405H Search Results

PDM1405H Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
PDM1405HA		Nihon Inter Electronics	MOSFET MODULE Dual 140A/500V		Original	PDF

PDM1405H Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: MOSFET 140A 500V 1 PDM1405HA	Original	PDM1405HA	PDF
Untitled Abstract: No abstract text available Text: MOSFET MODULE PDM1405HA Dual 140A /500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible	Original	/500V PDM1405HA 300KHz	PDF
PDM1405HA Abstract: No abstract text available Text: MOSFET 140A 500V PDM1405HA PDM1405HA 質量 Approximate Weight :460g •最大定格 Maximum Ratings 項目 Rating ドレイン・ソース間電圧 VDSS Drain-Source Voltage ゲート・ソース間電圧 Gate-Source Voltage ドレイン電流（連続）	Original	PDM1405HA 142/W PDM1405HA	PDF
PDM1405HA Abstract: No abstract text available Text: MOSFET MODULE PDM1405HA Dual 140A /500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible	Original	PDM1405HA /500V 300KHz 142i/W PDM1405HA	PDF
PDM1405H Abstract: No abstract text available Text: MOSFET 140A 500 V PDM1405HA •回路図 CIRCUIT ■外形寸法図 OUTLINE DRAWING PD PDM1405HA （単位 Dimension：mm） Rg MOS SBD 1 D2S1 G2 S2 FRD 2 (S2) 3 SBD (D1) MOS FRD S1 G1 Rg 質量 Approximate Weight：460g ■最大定格 Maximum Rating	Original	PDM1405HA Weight460g Duty50 PDM1405HA 140TC25 100TC25 280TC25 880TC25 06kgf PDM1405H	PDF
PT76S16 Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB Text: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ	Original		PDF
508RP Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40 Text: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ	Original		PDF
PDM5001 Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16 Text: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH	Original	C3557 PH1503 PH150 PDM5001 PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16	PDF
FCGS20A12 Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10 Text: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ	Original		PDF