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    PDE 120 Price and Stock

    Amphenol Communications Solutions HM2P09PDE120N9LF

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    DigiKey HM2P09PDE120N9LF Tray 1,464 1
    • 1 $1.71
    • 10 $1.304
    • 100 $1.02988
    • 1000 $0.918
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    Newark HM2P09PDE120N9LF Bulk 576 40
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    HM2P09PDE120N9LF Bulk 1,152
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    Chip1Stop HM2P09PDE120N9LF 576
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    • 1000 $1.54
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    IBS Electronics HM2P09PDE120N9LF 576 480
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    Master Electronics HM2P09PDE120N9LF
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    Amphenol Communications Solutions HM2P07PDE120N9LF

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    DigiKey HM2P07PDE120N9LF Tray 119 1
    • 1 $1.96
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    • 100 $1.18288
    • 1000 $1.07061
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    Newark HM2P07PDE120N9LF Bulk 2,768 35
    • 1 $2.3
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    • 1000 $2.3
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    Chip1Stop HM2P07PDE120N9LF 2,768
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    • 100 $2.2
    • 1000 $1.94
    • 10000 $1.89
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    IBS Electronics HM2P07PDE120N9LF 2,768 454
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    • 1000 $1.911
    • 10000 $1.911
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    Master Electronics HM2P07PDE120N9LF
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    • 100 $3.72
    • 1000 $1.76
    • 10000 $1.72
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    Amphenol Communications Solutions HM2P65PDE120N9LF

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    DigiKey HM2P65PDE120N9LF Tray 47 1
    • 1 $3.75
    • 10 $2.868
    • 100 $2.27538
    • 1000 $2.21174
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    Newark HM2P65PDE120N9LF Bulk 340 30
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    • 1000 $2.65
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    Chip1Stop HM2P65PDE120N9LF 340
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    • 100 $2.86
    • 1000 $2.74
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    IBS Electronics HM2P65PDE120N9LF 30
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    Master Electronics HM2P65PDE120N9LF
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    • 100 $4.83
    • 1000 $2.28
    • 10000 $2.24
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    Amphenol Communications Solutions HM2P07PDE120E9

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    Amphenol Communications Solutions HM2P60PDE120N9

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    PDE 120 Datasheets Context Search

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    MBN600GR12A

    Abstract: Hitachi DSA0047
    Text: PDE-N600GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN600GR12A [Rated 600A/1200V, Single-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode.


    Original     		PDF PDE-N600GR12A-0 MBN600GR12A 00A/1200V, Weight570g MBN600GR12A Hitachi DSA0047

    MBM100GR12A

    Abstract: Hitachi DSA0047
    Text: PDE-M100GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM100GR12A [Rated 100A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD


    Original     		PDF PDE-M100GR12A-0 MBM100GR12A 00A/1200V, Weight230g MBM100GR12A Hitachi DSA0047

    hitachi igbt

    Abstract: IGBT 1200A MBN1200GR12A Hitachi DSA0047
    Text: PDE-N1200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN1200GR12A [Rated 1200A/1200V, Single-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode.


    Original     		PDF PDE-N1200GR12A-0 MBN1200GR12A 200A/1200V, Weight1300g hitachi igbt IGBT 1200A MBN1200GR12A Hitachi DSA0047

    MBN400GR12A

    Abstract: Hitachi DSA0047
    Text: PDE-N400GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN400GR12A [Rated 400A/1200V, Single-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode.


    Original     		PDF PDE-N400GR12A-0 MBN400GR12A 00A/1200V, Weight480g MBN400GR12A Hitachi DSA0047

    PDE-N600GR12A-0

    Abstract: MBN600GR12A MBN600GR12
    Text: PDE-N600GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN600GR12A [Rated 600A/1200V, Single-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode.


    Original     		PDF PDE-N600GR12A-0 MBN600GR12A 00A/1200V, Weight570g PDE-N600GR12A-0 MBN600GR12A MBN600GR12

    MBM150GR12A

    Abstract: Hitachi DSA0047
    Text: PDE-M150GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM150GR12A [Rated 150A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD


    Original     		PDF PDE-M150GR12A-0 MBM150GR12A 50A/1200V, Weight230g MBM150GR12A Hitachi DSA0047

    fast recovery diode 600v 1200A

    Abstract: diode current 1200A MBN1200GR12A IGBT 1200A PDE-N1200GR12A-0 IGBT 1200A 600V
    Text: PDE-N1200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN1200GR12A [Rated 1200A/1200V, Single-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode.


    Original     		PDF PDE-N1200GR12A-0 MBN1200GR12A 200A/1200V, Weight1300g fast recovery diode 600v 1200A diode current 1200A MBN1200GR12A IGBT 1200A PDE-N1200GR12A-0 IGBT 1200A 600V

    ETON

    Abstract: MBN400GR12A PC2500
    Text: PDE-N400GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN400GR12A [Rated 400A/1200V, Single-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode.


    Original     		PDF PDE-N400GR12A-0 MBN400GR12A 00A/1200V, Weight480g ETON MBN400GR12A PC2500

    MBM200GR12A

    Abstract: Hitachi DSA0047
    Text: PDE-M200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM200GR12A [Rated 200A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD


    Original     		PDF PDE-M200GR12A-0 MBM200GR12A 00A/1200V, Weight230g MBM200GR12A Hitachi DSA0047

    mbm150gr12

    Abstract: MBM150GR12A MBM150
    Text: PDE-M150GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM150GR12A [Rated 150A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD


    Original     		PDF PDE-M150GR12A-0 MBM150GR12A 50A/1200V, Weight230g mbm150gr12 MBM150GR12A MBM150

    MBM200GR12A

    Abstract: No abstract text available
    Text: PDE-M200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM200GR12A [Rated 200A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD


    Original     		PDF PDE-M200GR12A-0 MBM200GR12A 00A/1200V, Weight230g MBM200GR12A

    MBM100GR12

    Abstract: MBM100GR12A
    Text: PDE-M100GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM100GR12A [Rated 100A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD


    Original     		PDF PDE-M100GR12A-0 MBM100GR12A 00A/1200V, Weight230g MBM100GR12 MBM100GR12A

    MBM300GR12A

    Abstract: No abstract text available
    Text: PDE-M300GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM300GR12A [Rated 300A/1200V, Dual-pack type] OUTLINE DRAWING Unit in mm 110 93 25 E2 C1 80 62 C2E1 4-Fast-on Terminal #110 25 E2 G2 4- φ 6.5 CIRCUIT DIAGRAM G2 E2 E2 3-M6 C1 18 18 18 46.5 φ 0.8


    Original     		PDF PDE-M300GR12A-0 MBM300GR12A 00A/1200V, Weight460g MBM300GR12A

    MBM300GR12A

    Abstract: Hitachi DSA0047
    Text: PDE-M300GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM300GR12A [Rated 300A/1200V, Dual-pack type] OUTLINE DRAWING Unit in mm 110 93 25 E2 C1 80 62 C2E1 4-Fast-on Terminal #110 25 E2 G2 4- φ 6.5 CIRCUIT DIAGRAM G2 E2 E2 3-M6 C1 18 18 18 46.5 φ 0.8


    Original     		PDF PDE-M300GR12A-0 MBM300GR12A 00A/1200V, Weight460g MBM300GR12A Hitachi DSA0047

    vt244a

    Abstract: No abstract text available
    Text: 8M x 72-Bit Dynamic RAM Module ECC - Module HYM 72V8000GS-50/-60 HYM 72V8010GS-50/-60 Preliminary Information • 8 388 608 words by 72-bit ECC - mode, one bank organization • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version)


    Original     		PDF 72-Bit 72V8000GS-50/-60 72V8010GS-50/-60 72V8000/10GS-50 72V8000/10GS-60 DQ0-DQ71) HYM72V8000/10GS-50/-60 L-DIM-168-4 vt244a

    PQ62

    Abstract: DQ73
    Text: 168 Pin DIMM Characteristics. 168 Pin Buffered DIMM Characteristics Basic Architecture ECC Data Bit Assignments DRAM CHIPS Intended primarily for use in 8-byte systems, although use in 4-byte systems is supported via onboard interleave, the basic structure of 168 pin


    Original     		PDF Parity/x72 PQ62 DQ73

    74ABT244

    Abstract: No abstract text available
    Text: 1M x 72-Bit Dynamic RAM Module ECC - Module HYM 721000GS-60/-70 HYM 721010GS-60/-70 Advanced Information • 1 048 576 words by 72-bit ECC - mode organization • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time


    Original     		PDF 72-Bit 721000GS-60/-70 721010GS-60/-70 HYM721000/10GS-60/-70 L-DIM-168-2 GLD05861 74ABT244

    q207

    Abstract: VT244A DM1687
    Text: 16M x 72-Bit Dynamic RAM Module ECC - Module HYM 72V1600GS-50/-60 HYM 72V1610GS-50/-60 Preliminary Information • 16 777 216 words by 72-bit ECC - mode organization • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time


    Original     		PDF 72-Bit 72V1600GS-50/-60 72V1610GS-50/-60 16Mx72 DM168-7 HYM72V1600/10GS-50/-60 72-ECC L-DIM-168-7 q207 VT244A DM1687

    Untitled

    Abstract: No abstract text available
    Text: 4M x 72-Bit EDO-DRAM Module ECC - Module HYM 72V4005GS-50/-60 HYM 72V4015GS-50/-60 168 pin buffered DIMM Module Advanced Information • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 4M x 72 organisation • Optimized for ECC applications


    Original     		PDF 72-Bit 72V4005GS-50/-60 72V4015GS-50/-60 HYM72V4005/15GS-50/-60 72-ECC L-DIM-168-5 4Mx72 DM168-5

    Untitled

    Abstract: No abstract text available
    Text: 16M x 72-Bit Dynamic RAM Module ECC - Module HYM 72V1620GS-50/-60 HYM 72V1630GS-50/-60 Advanced Information • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 16M x 72 organisation • Optimized for ECC applications • Fast Page Mode Operation


    Original     		PDF 72-Bit 72V1620GS-50/-60 72V1630GS-50/-60 HYM72V1620/30GS-50/-60 72-ECC L-DIM-168-9 16Mx72 DM168-9

    bj 94 131- 6

    Abstract: LV244A
    Text: 4M x 72-Bit Dynamic RAM Module ECC - Module HYM 72V4000GS-50/-60 HYM 72V4010GS-50/-60 • 168 pin 4 194 304 words by 72-bit ECC - mode organization for PC main memory applications • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version)


    Original     		PDF 72-Bit 72V4000GS-50/-60 72V4010GS-50/-60 HYM72V4000/10GS-50/-60 72-ECC L-DIM-168-5 4Mx72 DM168-5 bj 94 131- 6 LV244A

    EH18

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372C120CJ/CT KMM372C120CJ/CT Fast Page Mode 1Mx72 DRAM DIMM with ECC, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES • Performance Range: The Sam sung KM M 372C 120C is a 1M bit x 72 D ynam ic RAM high density m em ory module. The tRAC tCAC 18ns


    OCR Scan     		PDF KMM372C120CJ/CT 1Mx72 KMM372C120CJ/CT 48pin 168-pin KMM372C120C 110ns 130ns KMM37 EH18

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM64400 Product Preview 4M x 64 Bit Dynamic Random Access Memory Module The MCM64400 is a dynamic random access memory DRAM module organized as 4,194,304 x 64 bits. The module is a JED EC -standard 168-lead d u a l-in -lin e memory module (DIMM) with 84 separate contacts per side, consist­


    OCR Scan     		PDF MCM64400 MCM64400 168-lead 400-m

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 2M x 72-Bit Dynamic RAM EDO Module ECC - Module HYM 72V2005GS-50/-60 168 pin buffered DIMM Module Preliminary Information • 168 pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 2 M x 72 organisation • Optimized for ECC applications


    OCR Scan     		PDF 72-Bit 72V2005GS-50/-60 HYM72 V2005GS-50/-60 L-DIM-168-22 DM168-22