IRG4IBC30UD
Abstract: PD917
Text: PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
|
Original
|
PDF
|
PD91753A
IRG4IBC30UD
O-220
IRG4IBC30UD
PD917
|
Untitled
Abstract: No abstract text available
Text: PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
|
Original
|
PDF
|
PD91753A
IRG4IBC30UD
O-220
|
IGBT IRG4IBC30UD
Abstract: IRG4IBC30UD IGBT collector voltage 5kV ir*c30ud PD917
Text: PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
|
Original
|
PDF
|
PD91753A
IRG4IBC30UD
O-220
Absol20
IGBT IRG4IBC30UD
IRG4IBC30UD
IGBT collector voltage 5kV
ir*c30ud
PD917
|
IRG4IBC30UD
Abstract: No abstract text available
Text: PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
|
Original
|
PDF
|
PD91753A
IRG4IBC30UD
O-220
Absol52-7105
IRG4IBC30UD
|