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    PD912 Price and Stock

    Crystek Corporation CCPD-912X-25-125

    XTAL OSC XO 125.0000MHZ LVPECL
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    Crystek Corporation CCPD-912X-25-77.76

    XTAL OSC XO 77.7600MHZ LVPECL
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    DigiKey CCPD-912X-25-77.76
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    Crystek Corporation CCPD-912X-25-156.25

    XTAL OSC XO 156.2500MHZ LVPECL
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    DigiKey CCPD-912X-25-156.25
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    Crystek Corporation CCPD-912X-25-155.52

    XTAL OSC XO 155.5200MHZ LVPECL
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    Crystek Corporation CCPD-912X-25-106.25

    XTAL OSC XO 106.2500MHZ LVPECL
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    DigiKey CCPD-912X-25-106.25
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    PD912 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PD912 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    PD91-21C EVERLIGHT Original PDF

    PD912 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOSFET IRFZ46N

    Abstract: IRFZ46N equivalent NT 407 F datasheet for IRFZ46N transistor IRFZ46N IRFZ46N of irfz46n
    Text: PD-91277 IRFZ46N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 16.5mΩ G ID = 53A S Description Advanced HEXFET® Power MOSFETs from International


    Original     		PDF PD-91277 IRFZ46N O-220 O-220AB MOSFET IRFZ46N IRFZ46N equivalent NT 407 F datasheet for IRFZ46N transistor IRFZ46N IRFZ46N of irfz46n

    IRF3205

    Abstract: IRF3205 equivalent irf3205 DRIVER driver for IRF3205 IRF3205 DATASHEET IRF3205 E DATASHEET IRF3205 IR PD-91279E datasheet for IRF3205 irf3205 mosfet transistor
    Text: PD-91279E IRF3205 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 8.0mΩ G ID = 110A… S Description Advanced HEXFET® Power MOSFETs from International


    Original     		PDF PD-91279E IRF3205 O-220 IRF3205 IRF3205 equivalent irf3205 DRIVER driver for IRF3205 IRF3205 DATASHEET IRF3205 E DATASHEET IRF3205 IR PD-91279E datasheet for IRF3205 irf3205 mosfet transistor

    Untitled

    Abstract: No abstract text available
    Text: PD-91299E IRHM9250 JANSR2N7423 200V, P-CHANNEL REF: MIL-PRF-19500/662 RADIATION HARDENED POWER MOSFET THRU-HOLE T0-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM9250 IRHM93250 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on)


    Original     		PDF PD-91299E IRHM9250 JANSR2N7423 MIL-PRF-19500/662 T0-254AA) IRHM93250 JANSF2N7423 reduces54AA.

    Untitled

    Abstract: No abstract text available
    Text: User’s Manual V850E/RS1TM 32-/16-bit Single-Chip Microcontroller with CAN Interface Hardware µPD70F3402, µPD70F3403, µPD70F3403A Document No. U16702EE3V2UD00 Date Published April 2006 NEC Electronics Corporation 2006 Printed in Germany NOTES FOR CMOS DEVICES


    Original     		PDF V850E/RS1TM 32-/16-bit PD70F3402, PD70F3403, PD70F3403A U16702EE3V2UD00 MI852-2886-9022/9044

    Untitled

    Abstract: No abstract text available
    Text: PD-91293C IRFY9130C, IRFY9130CM POWER MOSFET THRU-HOLE TO-257AA 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY9130C 0.3 Ω -11.2A Ceramic IRFY9130CM 0.3 Ω -11.2A Ceramic TO-257AA HEXFET® MOSFET technology is the key to International


    Original     		PDF PD-91293C IRFY9130C, IRFY9130CM O-257AA) IRFY9130C O-257AA 5M-1994. O-257AA.

    IRF3205

    Abstract: driver for IRF3205 irf3205 DRIVER IRF3205 equivalent irf3205 mosfet transistor irf3205 mosfet IRF3205 DATASHEET PD-91279E IRF3205 TO-220
    Text: PD-91279E IRF3205 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 8.0mΩ G ID = 110A… S Description Advanced HEXFET® Power MOSFETs from International


    Original     		PDF PD-91279E IRF3205 O-220 O-220AB IRF3205 driver for IRF3205 irf3205 DRIVER IRF3205 equivalent irf3205 mosfet transistor irf3205 mosfet IRF3205 DATASHEET PD-91279E IRF3205 TO-220

    MOSFET IRFZ46N

    Abstract: IRFZ46N of irfz46n IRF1010 irfz
    Text: PD-91277A IRFZ46N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 16.5mΩ G ID = 53A‡ S Description Advanced HEXFET® Power MOSFETs from International


    Original     		PDF PD-91277A IRFZ46N O-220 O-220AB. O-220AB IRF1010 MOSFET IRFZ46N IRFZ46N of irfz46n IRF1010 irfz

    Untitled

    Abstract: No abstract text available
    Text: PD-91273D IRHY7230CM JANSR2N7381 200V, N-CHANNEL REF:MIL-PRF-19500/614 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number IRHY7230CM IRHY3230CM IRHY4230CM IRHY8230CM Radiation Level 100K Rads (Si)


    Original     		PDF PD-91273D IRHY7230CM JANSR2N7381 MIL-PRF-19500/614 O-257AA) IRHY3230CM IRHY4230CM IRHY8230CM 1000K

    TRANSISTORS sec 537

    Abstract: No abstract text available
    Text: PD-91292D POWER MOSFET THRU-HOLE TO-257AA IRFY440C, IRFY440CM 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY440C 0.85 Ω 7.0A Ceramic IRFY440CM 0.85 Ω 7.0A Ceramic HEXFET® MOSFET technology is the key to International


    Original     		PDF PD-91292D O-257AA) IRFY440C, IRFY440CM IRFY440C 5M-1994. O-257AA. TRANSISTORS sec 537

    PA09 8 PIN TO-3 PACKAGE DIMENSIONS

    Abstract: cs486 upd70f3403a V850 fg2 p521 gr INTR10
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    CAC92-H

    Abstract: PD91-21C DPD-09-10 smd a017
    Text: EVERLIGHT ELECTRONICS CO., LTD. Device Number: DPD-091-052 PD91-21C ECN: MODEL NO: REV: Page: 1.0 1/7 Package Dimensions: OFFICE: NO 25,Lane 76,Chung Yang Rd, Sec.3 Tucheng, Taipei 236, Taiwan, R.O.C. TEL : 886-2-2267-2000,2266-9936 22 Lines FAX : 886-2-2267-6189


    Original     		PDF DPD-091-052 PD91-21C CAC92-H 1000Pcs/1Bag10Bags/1Box 10Boxes/1Carton CAC92-H PD91-21C DPD-09-10 smd a017

    IRF N-Channel Power MOSFETs

    Abstract: IRHY3230CM IRHY4230CM IRHY7230CM IRHY8230CM JANSR2N7381
    Text: PD-91273E IRHY7230CM JANSR2N7381 200V, N-CHANNEL REF:MIL-PRF-19500/614 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHY7230CM 100K Rads (Si) IRHY3230CM 300K Rads (Si) IRHY4230CM 500K Rads (Si)


    Original     		PDF PD-91273E IRHY7230CM JANSR2N7381 MIL-PRF-19500/614 O-257AA) IRHY7230CM IRHY3230CM IRHY4230CM IRHY8230CM 1000K IRF N-Channel Power MOSFETs JANSR2N7381

    TO-257AA

    Abstract: IRFY440C IRFY440CM
    Text: PD-91292D POWER MOSFET THRU-HOLE TO-257AA IRFY440C, IRFY440CM 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY440C 0.85 Ω 7.0A Ceramic IRFY440CM 0.85 Ω 7.0A Ceramic HEXFET® MOSFET technology is the key to International


    Original     		PDF PD-91292D O-257AA) IRFY440C, IRFY440CM IRFY440C 5M-1994. O-257AA. TO-257AA IRFY440C IRFY440CM

    Untitled

    Abstract: No abstract text available
    Text: PD-91289E POWER MOSFET THRU-HOLE TO-257AA IRFY240C,IRFY240CM 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY240C 0.18 Ω 16A Ceramic IRFY240CM 0.18 Ω 16A Ceramic TO-257AA HEXFET® MOSFET technology is the key to International


    Original     		PDF PD-91289E O-257AA) IRFY240C IRFY240CM IRFY240C O-257AA O-257AA. MIL-PRF-19500

    q 1363

    Abstract: No abstract text available
    Text: PD-91293C IRFY9130C, IRFY9130CM POWER MOSFET THRU-HOLE TO-257AA 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY9130C 0.3 Ω -11.2A Ceramic IRFY9130CM 0.3 Ω -11.2A Ceramic HEXFET® MOSFET technology is the key to International


    Original     		PDF PD-91293C IRFY9130C, IRFY9130CM O-257AA) IRFY9130C IRFY9130CM inverte16 5M-1994. O-257AA. q 1363

    Untitled

    Abstract: No abstract text available
    Text: PD-91273E IRHY7230CM JANSR2N7381 200V, N-CHANNEL REF:MIL-PRF-19500/614 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHY7230CM 100K Rads (Si) IRHY3230CM 300K Rads (Si) IRHY4230CM 500K Rads (Si)


    Original     		PDF PD-91273E IRHY7230CM JANSR2N7381 MIL-PRF-19500/614 O-257AA) IRHY7230CM IRHY3230CM IRHY4230CM IRHY8230CM 1000K

    70F34

    Abstract: PD911 transistor 2.048 MT1 seven segmen cec p77 transistor cs312 FP4 material NEC 03F PA09 8 PIN TO-3 PACKAGE DIMENSIONS PD912
    Text: Preliminary User’s Manual V850E/RS1TM 32-/16-bit Single-Chip Microcontroller with CAN Interface Hardware µPD70F3402, µPD70F3403 Document No. U16702EE1V0UD00 Date Published January 2005  NEC Corporation 2005 Printed in Germany NOTES FOR CMOS DEVICES


    Original     		PDF V850E/RS1TM 32-/16-bit PD70F3402, PD70F3403 U16702EE1V0UD00 70F34 PD911 transistor 2.048 MT1 seven segmen cec p77 transistor cs312 FP4 material NEC 03F PA09 8 PIN TO-3 PACKAGE DIMENSIONS PD912

    Untitled

    Abstract: No abstract text available
    Text: User’s Manual V850E/RS1TM 32-/16-bit Single-Chip Microcontroller with CAN Interface Hardware µPD70F3402, µPD70F3403, µPD70F3403A Document No. U16702EE3V1UD00 Date Published February 2006  NEC Electronics Corporation 2006 Printed in Germany NOTES FOR CMOS DEVICES


    Original     		PDF V850E/RS1TM 32-/16-bit PD70F3402, PD70F3403, PD70F3403A U16702EE3V1UD00 VIH852-2886-9022/9044

    IRFY240C

    Abstract: HEXFET pinout IRFY240CM
    Text: PD-91289E POWER MOSFET THRU-HOLE TO-257AA IRFY240C,IRFY240CM 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY240C 0.18 Ω 16A Ceramic IRFY240CM 0.18 Ω 16A Ceramic TO-257AA HEXFET® MOSFET technology is the key to International


    Original     		PDF PD-91289E O-257AA) IRFY240C IRFY240CM IRFY240C O-257AA O-257AA. MIL-PRF-19500 HEXFET pinout IRFY240CM

    Untitled

    Abstract: No abstract text available
    Text: PD-91224E RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM7360SE JANSR2N7391 400V, N-CHANNEL REF:MIL-PRF-19500/661 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID QPL Part Number


    Original     		PDF PD-91224E O-254AA) IRHM7360SE JANSR2N7391 MIL-PRF-19500/661 O-254AA applicatio54AA. MIL-PRF-19500

    Untitled

    Abstract: No abstract text available
    Text: brtemational PD91226 j«g]Rectifier_ IRFD 320 HEXFET P ow er M O S FE T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements


    OCR Scan     		PDF 4A5545E

    Untitled

    Abstract: No abstract text available
    Text: International PD91217 liS Rectifier_ IRL620 HEXFET Power M O S F E T • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • R d s ON Specified at V q s = 4V & 5V • Fast Switching • Ease of paralleling • Simple Drive Requirements


    OCR Scan     		PDF IRL620

    Untitled

    Abstract: No abstract text available
    Text: International PD91272 ^Rectifier_ IRFD224 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements V DSS = 2 5 0 V ^D S o n = 1 - 1 ^


    OCR Scan     		PDF IRFD224

    PM15CMA060

    Abstract: PM15CMA ls igbt block circuit diagram for igbt driver 3 phase UPS block diagram
    Text: International [regjRectifier provisional PD912£ PM15CMA060 IGBT INTELLIGENT MODULE Features • 3 phase IGBT bridge with drive and protection circuit. • 2kW output power at 300VDC, 8kHz, Tc = 85°C • "UltraFast" IGBT and “HEXFRED"™ LHtrafast, Soft Recovery


    OCR Scan     		PDF 300VDC, 25kHz PM15CMA060 PM15CMA060 PM15CMA ls igbt block circuit diagram for igbt driver 3 phase UPS block diagram