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    Monolithic Power Systems MEZDPD4506A-851A

    DC DC CONVERTER 0.6-22V
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    Monolithic Power Systems MEZDPD4506A-84E1

    DC DC CONVERTER 24V
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    Monolithic Power Systems MEZDPD4506A-8506

    DC DC CONVERTER 0.6-22V
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    Monolithic Power Systems MEZDPD4506A-8539

    DC DC CONVERTER 0.6-22V
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    Monolithic Power Systems MEZDPD4506AS-84F2

    DC DC CONVERTER 24V
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    PD450 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PD450 Micro-Precision Technologies Microwave Pin Diode Drivers Scan PDF

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    UPD4502161

    Abstract: upd4502161g5a12 UPD4502161G5A12-7JF PD4502161 BD3/1/TX13/7.9/PP10/UPD4516421G5-A12-7JF
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4502161 2M-bit Synchronous DRAM Description The µPD4502161 is a high-speed 2,097,152-bit synchronous dynamic random-access memory, organized as 65,536 x 16 × 2 word × bit × bank , respectively. The synchronous DRAM achieves high-speed data transfer using the pipeline architecture.


    Original     		PDF PD4502161 PD4502161 152-bit 50-pin UPD4502161 upd4502161g5a12 UPD4502161G5A12-7JF BD3/1/TX13/7.9/PP10/UPD4516421G5-A12-7JF

    KSS-210A

    Abstract: KSS210A sanyo SF90 SH1106 SOAD70A KSS150A PEA1030 KSS210B SOALP1200 cdm12.1
    Text: Manufacturer Model Pickup AIWA CAB500 KSS150A AIWA CADW500 KSS150A AIWA CNX400 KSS210A AIWA CSDEX1 KSM2101BA AIWA CSDEX1 KSS210B AIWA CSDEX210 KSM2101BA AIWA CSDEX210 KSS210B AIWA CSDEX310 KSM2101BA AIWA CSDEX310 KSS210B AIWA CVDZ93W KSS150A AIWA CX810Z KSS210A


    Original     		PDF CAB500 CADW500 CNX400 CSDEX210 CSDEX310 CVDZ93W CX810Z CXL60 KSS-210A KSS210A sanyo SF90 SH1106 SOAD70A KSS150A PEA1030 KSS210B SOALP1200 cdm12.1

    uPD4504161

    Abstract: upd4504161g5
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4504161 4M-bit Synchronous DRAM Description The µPD4504161 is a high-speed 4,194,304-bit synchronous dynamic random-access memory, organized as 131,072 x 16 × 2 word × bit × bank , respectively. The synchronous DRAM achieves high-speed data transfer using the pipeline architecture.


    Original     		PDF PD4504161 PD4504161 304-bit 50-pin uPD4504161 upd4504161g5

    UPD4504161

    Abstract: PD4504161 upd4504161g5
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4504161 4M-bit Synchronous DRAM Description The µPD4504161 is a high-speed 4,194,304-bit synchronous dynamic random-access memory, organized as 131,072 x 16 × 2 word × bit × bank , respectively. The synchronous DRAM achieves high-speed data transfer using the pipeline architecture.


    Original     		PDF PD4504161 PD4504161 304-bit 50-pin UPD4504161 upd4504161g5

    NPCE781BA0DX

    Abstract: nuvoton NPCE781BA0DX 92HD79B1a5 92HD79B1 NPCE781 TPS51611 NPCE781B UP7534BRA8 npce781ba G7922R61U
    Text: 5 4 3 2 1 D D Berry DG15 Discrete/UMA Schematics Document Arrandale Intel PCH C C 2010-02-03 REV : A00 DY :None Installed UMA:UMA platform installed PARK:DIS PARK platform installed M96:DIS M96 platform installed VRAM_1G:VRAM 128M*16 installed Colay :Manual modify BOM


    Original     		PDF 512MB 64Mx16b C995R GPIO45 650ms NPCE781BA0DX nuvoton NPCE781BA0DX 92HD79B1a5 92HD79B1 NPCE781 TPS51611 NPCE781B UP7534BRA8 npce781ba G7922R61U

    PD2026A

    Abstract: CXD2562Q saa7321gp PD2029A saa7321 PD2026B CXA8042AS CXD8567 CXD2562 PD2028B
    Text: CD Players ACOUSTIC RESEARCH CD-07 ACCUPHASE DAC10 ACCUPHASE DAC20 ACCUPHASE DC801 ACCUPHASE DP55V ACCUPHASE DP57 ACCUPHASE DP65 ACCUPHASE DP67 ACCUPHASE DP78 ACCUPHASE DP85 ACCUPHASE DP90 ACCUPHASE DP500 ADC CD 250XR AKAI CD26 AKAI CD37 AKAI CD55 AKAI CD57


    Original     		PDF CD-07 DAC10 DAC20 DC801 DP55V DP500 250XR CD-M839 CD420 APD32A PD2026A CXD2562Q saa7321gp PD2029A saa7321 PD2026B CXA8042AS CXD8567 CXD2562 PD2028B

    Untitled

    Abstract: No abstract text available
    Text: 4-WAY POWER DIVIDERS – 30 WATT SPECIFICATIONS FREQUENCY GHz 0.5 1 2 2.6 4 7 12 8 2 – – – – – – – – – INSERTION LOSS (dB, Max.) MODEL NUMBER 1 2 4 5.2 8 12.4 18 18 18 PD4-500/1000-30S PD4-1000/2000-30S PD4-2000/4000-30S PD4-2600/5200-30S


    Original     		PDF PD4-500/1000-30S PD4-1000/2000-30S PD4-2000/4000-30S PD4-2600/5200-30S PD4-4000/8000-30S PD4-7000/12400-30S PD4-12000/18000-30S PD4-8000/18000-30S PD4-2000/18000-30S

    PD4300

    Abstract: No abstract text available
    Text: HIGH POWER DIVIDERS/COMBINERS FREQUENCY MHz INSERTION PHASE POWER LOSS BALANCE ISOLATION VSWR (Watts) (±dB, Max.) (±Deg. Max.) (dB, Min.) (Max.) (CW) MODEL NUMBER STANDARD CONNECTORS INPUT/OUTPUT OUTLINE 2-WAY DIVIDERS 0.16 – 0.32 0.225 – 0.40 0.32 – 0.60


    Original     		PDF PD2-160/320-200S PD2-225/400-200S PD2-320/600-200S PD2-640/1200-200S PD2-800/900-250N PD2-930/1250-200S PD2-1000/2000-200S PD2-1000/2000-500N PD2-1200/1400-200S PD2-1400/2300-200S PD4300

    Nuvoton NPCE781

    Abstract: NPCE781BA0DX nuvoton NPCE781BA0DX npce781 RT8209EGQW 92HD79B1a5 RS880M G5285T11U NPCE781B HP C6602
    Text: 5 4 3 2 1 Berry Discrete/UMA Schematics Document D C D AMD Danube CPU S1g4 AMD GPU Madison-LP/M96-LP M2 RS880M + SB820M C 2010-03-08 REV : A00 B B <Core Design> Size A4 Document Number 4 3 Rev 2 Sheet ai Berry AMD Discrete/UMA Date: Monday, March 08, 2010


    Original     		PDF Madison-LP/M96-LP RS880M SB820M 4HH01 BQ24745 C6806, C6807, EC7928-EC7932. TP1309. EC704 Nuvoton NPCE781 NPCE781BA0DX nuvoton NPCE781BA0DX npce781 RT8209EGQW 92HD79B1a5 RS880M G5285T11U NPCE781B HP C6602

    PS224

    Abstract: PS235 PS835 PD416 PS-224 PD86 pd46 PS815 PD215 PD816
    Text: 41E D MIL ELECTRONICS INC blbmhM n000271 1 • ■«* 1.80 • K - “ S ttlA ■>* ^ IN lit A 1 WATTS O F ISOLATED O U TPU T POW ER • T A T r) 7 • POWER SUPPLY MODEL 1.00 - /' SINGLE O R DUAL O U TPU TS PRINTED C IR CU IT MOUNTING LESS THAN 3/4 CUBIC INCH


    OCR Scan     		PDF ps870 ps880 ps890 ps8100 pd510 pd512 pd210 pd212 pd410 pd412 PS224 PS235 PS835 PD416 PS-224 PD86 pd46 PS815 PD215 PD816

    A8RN

    Abstract: uPD4502161 D4502161
    Text: DATA SHEET MOS INTEGRATED CIRCUIT ju P D 4 5 0 2 1 6 1 2M-bit Synchronous DRAM Description The /¿PD4502161 is a high-speed 2,097,152-bit synchronous dynamic random-access memory, organized as 65,536 x 16 x 2 word x bit x bank , respectively. The synchronous DRAM achieves high-speed data transfer using the pipeline architecture.


    OCR Scan     		PDF uPD4502161 152-bit 50-pin A8RN D4502161

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE PIN DIODE DRIVERS T7 -FEATURES: • MIL-STD-883 SCREENING • TTL COMPATIBLE INPUTS • -6 5 ° TO +150°C STORAGE TEMP RANGE • -5 5 ° TO +125°C OPERATING TEMP RANGE OUTPUT CURRENT OUTPUT VOLTAGE OPEN CKT VEE , - 1 2


    OCR Scan     		PDF MIL-STD-883 PD2112 PD217 PDF311 PD350 PD450 PD6304 PD650 PD1050-1 PDF2311

    Microwave PIN diode

    Abstract: PD650 PD217 PD350 PD450 PD630 PDF311 Micro-Precision Technologies PD2112 PD1050
    Text: 7 P MICROWAVE PIN DIODE DRIVERS w l — FEATURES: • -6 5 ° TO +150°C STORAGE TEMP RANGE • -5 5 ° TO +125°C OPERATING TEMP RANGE MODEL OUTPUT CURRENT DC mA POSITIVE NEGATIVE MIN MAX MIN MAX MIN PEAK mA) POS NEG OUTPUT VOLTAGE OPEN CKT (VEE = -1 2 )


    OCR Scan     		PDF MIL-STD-883 PD1111 PD2112 PD217 PD3113 Microwave PIN diode PD650 PD350 PD450 PD630 PDF311 Micro-Precision Technologies PD1050

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD4502161 2M-bit Synchronous DRAM Description The ¿¡PD4502161 is a high-speed 2,097,152-bit synchronous dynam ic random -access memory, organized as 65,536 x 16 x 2 word x bit x bank , respectively. The synchronous DRAM achieves high-speed data transfer using the pipeline architecture.


    OCR Scan     		PDF uPD4502161 PD4502161 152-bit 50-pin S50G5-80-7JF3 PD4502161 PD4502161. PD4502161G5-7JF:

    PS224

    Abstract: PD515 PD516 ps235 PD245 PS890 pd845 PD215 pd26 PD814
    Text: POWER SUPPLY MODEL • 1 WATTS OF ISOLATED OUTPUT POWER • SINGLE OR DUAL OUTPUTS • PRINTED CIRCUIT MOUNTING ° LESS THAN 3/4 CUBIC INCH • PRINTED CIRCUIT MOUNTING ELECTRICAL SPECIFICATIONS Regulation for Input. .+ .5%


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 7 P w 7 MICROWAVE PIN DIODE DRIVERS — FEATURES: • -6 5 ° TO +150°C STORAGE TEMP RANGE • -5 5 ° TO +125°C OPERATING TEMP RANGE MODEL OUTPUT CURRENT DC mA POSITIVE NEGATIVE MIN MAX MIN MAX MIN PEAK mA) POS NEG OUTPUT VOLTAGE OPEN CKT (VEE = -1 2 )


    OCR Scan     		PDF MIL-STD-883

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /PD4502161 2M-bit Synchronous DRAM Description The ¿¡PD4502161 is a high-speed 2,097,152-bit synchronous dynam ic random -access memory, organized as 65,536 x 16 x 2 word x bit x bank , respectively. The synchronous DRAM achieves high-speed data transfer using the pipeline architecture.


    OCR Scan     		PDF /IPD4502161 PD4502161 152-bit 50-pin S50G5-80-7JF3 PD4502161 PD4502161. PD4502161G5-7JF:

    UPB562C

    Abstract: pc1373H uPB562 IPB562C PC393C 705C-01 PC1373 mpb562 received frequency display for vhf receivers 1705C
    Text: t MOS DIGITAL INTEGRATED CIRCUIT j u P DI 705 C -012 P H A S E LO C K ED LO O P F R E Q U E N C Y S Y N T H E S IZ E R T V D IG IT A L T U N IN G S Y S T E M C O N T R O L LE R C M O S LS I JUPD1705C-012 is a CMOS LSI developed for television receivers of PLL frequency synthesizer system designed


    OCR Scan     		PDF uPD1705C-012 pre-scaler/uPB562C, UPB562C pc1373H uPB562 IPB562C PC393C 705C-01 PC1373 mpb562 received frequency display for vhf receivers 1705C