PD448012-X
Abstract: 12X18 PD448012
Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD448012-X 8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD448012-X is a high speed, low power, 8,388,608 bits 524,288 words by 16 bits CMOS static RAM. The µPD448012-X has two chip enable pins (/CE1, CE2) to extend the capacity.
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PD448012-X
512K-WORD
16-BIT
PD448012-X
48-pin
I/O16)
12X18
PD448012
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD4482161, 4482181, 4482321, 4482361 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION Description The μPD4482161 is a 524,288-word by 16-bit, the μPD4482181 is a 524,288-word by 18-bit, the μPD4482321 is a 262,144-word by 32-bit and the μPD4482361 is a 262,144-word by 36-bit synchronous static RAM fabricated with
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PD4482161,
PD4482161
288-word
16-bit,
PD4482181
18-bit,
PD4482321
144-word
32-bit
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD4482163, 4482183, 4482323, 4482363 8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION DOUBLE CYCLE DESELECT Description The μPD4482163 is a 524,288-word by 16-bit, the μPD4482183 is a 524,288-word by 18-bit, μPD4482323 is a 262,144word by 32-bit and the μPD4482363 is a 262,144-word by 36-bit synchronous static RAM fabricated with advanced CMOS
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PD4482163,
PD4482163
288-word
16-bit,
PD4482183
18-bit,
PD4482323
144word
32-bit
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Untitled
Abstract: No abstract text available
Text: データ･シート MOS 集積回路 MOS Integrated Circuit PD4482161, 4482181, 4482321, 4482361 8M ビット CMOS シンクロナス高速 SRAM フロー・スルー・オペレーション μPD4482161（524,288 ワードx16 ビット），μPD4482181（524,288 ワード×18 ビット），μPD4482321（262,144
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PD4482161,
PD4482181
PD4482321
PD4482161
PD4482361262
C-A65-A75-A85-C75-C85
C-A65Y-A75Y-A85Y-C75Y-C85Y
ns133
ns117
ns100
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va44a
Abstract: No abstract text available
Text: データ･シート MOS 集積回路 MOS Integrated Circuit PD4481162, 4481182, 4481322, 4481362 8M ビット ZEROSBTM SRAM パイプライン・オペレーション μPD4481162（524,288 ワードx16 ビット），μPD4481182（524,288 ワード×18 ビット），μPD4481322（262,144
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PD4481162,
PD4481182
PD4481322
PD4481162
PD4481362262
-A44-A50-A60-A75-A44Y-A50Y-A60Y-A75Y
-C60-C75-C60Y-C75Y
C-A44-A50-A60-A75-C60-C75
C-A44Y-A50Y-A60Y-A75Y-C60Y-C75Y
ns225
va44a
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PD4481161
Abstract: m155
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD4481161, 4481181, 4481321, 4481361 8M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The μPD4481161 is a 524,288-word by 16-bit, the μPD4481181 is a 524,288-word by 18-bit, the μPD4481321 is a 262,144-word by 32-bit and the μPD4481361 is a 262,144-word by 36-bit ZEROSB static RAM fabricated with
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PD4481161,
PD4481161
288-word
16-bit,
PD4481181
18-bit,
PD4481321
144-word
32-bit
m155
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PD448012-X
Abstract: Cxxx uPD448012-X NEC marking BX
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD448012-X 8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The μPD448012-X is a high speed, low power, 8,388,608 bits 524,288 words by 16 bits CMOS static RAM. The μPD448012-X has two chip enable pins (/CE1, CE2) to extend the capacity.
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PD448012-X
512K-WORD
16-BIT
PD448012-X
48-pin
I/O16)
Cxxx
uPD448012-X
NEC marking BX
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UPD448012GY-B55X-MJH-A
Abstract: uPD448012GY-B70X-MJH
Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD448012-X 8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD448012-X is a high speed, low power, 8,388,608 bits 524,288 words by 16 bits CMOS static RAM. The µPD448012-X has two chip enable pins (/CE1, CE2) to extend the capacity.
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PD448012-X
512K-WORD
16-BIT
PD448012-X
48-pin
I/O16)
UPD448012GY-B55X-MJH-A
uPD448012GY-B70X-MJH
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD448012-X 8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD448012-X is a high speed, low power, 8,388,608 bits 524,288 words by 16 bits CMOS static RAM. The µPD448012-X has two chip enable pins (/CE1, CE2) to extend the capacity.
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PD448012-X
512K-WORD
16-BIT
PD448012-X
48-PIN
I/O16)
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100-PIN PLASTIC LQFP NEC
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD4482162, 4482182, 4482322, 4482362 8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION SINGLE CYCLE DESELECT Description The μPD4482162 is a 524,288-word by 16-bit, the μPD4482182 is a 524,288-word by 18-bit, μPD4482322 is a 262,144word by 32-bit and the μPD4482362 is a 262,144-word by 36-bit synchronous static RAM fabricated with advanced CMOS
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PD4482162,
PD4482162
288-word
16-bit,
PD4482182
18-bit,
PD4482322
144word
32-bit
100-PIN PLASTIC LQFP NEC
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c60 equivalent
Abstract: marking A44 MARKING A50
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD4481162, 4481182, 4481322, 4481362 8M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The μPD4481162 is a 524,288-word by 16-bit, the μPD4481182 is a 524,288-word by 18-bit, the μPD4481322 is a 262,144-word by 32-bit and the μPD4481362 is a 262,144-word by 36-bit ZEROSB static RAM fabricated with
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PD4481162,
PD4481162
288-word
16-bit,
PD4481182
18-bit,
PD4481322
144-word
32-bit
c60 equivalent
marking A44
MARKING A50
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD4481161-Y, 4481181-Y, 4481321-Y, 4481361-Y 8M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD4481161-Y is a 524,288-word by 16-bit, the µPD4481181-Y is a 524,288-word by 18-bit, the µPD4481321Y is a 262,144-word by 32-bit and the µPD4481361-Y is a 262,144-word by 36-bit ZEROSB static RAM fabricated
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PD4481161-Y,
4481181-Y,
4481321-Y,
4481361-Y
PD4481161-Y
288-word
16-bit,
PD4481181-Y
18-bit,
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a65y
Abstract: PD4481161 LQFP14 448136
Text: データ･シート MOS 集積回路 MOS Integrated Circuit PD4481161, 4481181, 4481321, 4481361 8M ビット ZEROSBTM SRAM フロー・スルー・オペレーション μPD4481161（524,288 ワードx16 ビット），μPD4481181（524,288 ワード×18 ビット），μPD4481321（262,144
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PD4481161,
PD4481181
PD4481321
PD4481161
PD4481361262
-A65-A75-A85-A65Y-A75Y-A85Y
-C75-C85-C75Y-C85Y
C-A65-A75-A85-C75-C85
C-A65Y-A75Y-A85Y-C75Y-C85Y
ns133
a65y
PD4481161
LQFP14
448136
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uPD448012GY-B70X-MJH
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD448012-X 8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD448012-X is a high speed, low power, 8,388,608 bits 524,288 words by 16 bits CMOS static RAM. The µPD448012-X has two chip enable pins (/CE1, CE2) to extend the capacity.
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PD448012-X
512K-WORD
16-BIT
PD448012-X
48-pin
I/O16)
uPD448012GY-B70X-MJH
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PD448012-X
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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A-44440
Abstract: NS225 PD4482322
Text: データ･シート MOS 集積回路 MOS Integrated Circuit PD4482162, 4482182, 4482322, 4482362 8M ビット CMOS シンクロナス高速 SRAM パイプライン・オペレーション シングル・サイクル・ディセレクト μPD4482162（524,288 ワードx16 ビット），μPD4482182（524,288 ワード×18 ビット），μPD4482322（262,144
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PD4482162,
PD4482162
PD4482182
PD4482322
PD4482362262
C-A44-A50-A60-C60
C-A44Y-A50Y-A60Y-C60Y
ns225
ns200
ns167
A-44440
PD4482322
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pd448
Abstract: GW 94 H
Text: データ･シート MOS 集積回路 MOS Integrated Circuit PD4482163, 4482183, 4482323, 4482363 8M ビット CMOS シンクロナス高速 SRAM パイプライン・オペレーション ダブル・サイクル・ディセレクト μPD4482163（524,288 ワードx16 ビット），μPD4482183（524,288 ワード×18 ビット），μPD4482323（262,144
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PD4482163,
PD4482163
PD4482183
PD4482323
PD4482363262
C-A44-A50-A60
C-A44Y-A50Y-A60Y
ns225
ns200
ns167
pd448
GW 94 H
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PD4464
Abstract: No abstract text available
Text: SEC //P D 4 4 6 4 8,192 X 8-B IT STATIC CMOS RAM NEC Electronics Inc. Pin Configuration Description T h e //P D 4 4 6 4 is a high-speed 8,192-word by 8-b it static RAM fabricated with advanced silicon-gate technology. Full C M O S storage cells with six transistors make the
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OCR Scan
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192-word
28-pin
28-Pln
//PD4464-12L/-15L/-20L:
3-001761A
PD4464
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