UPD431232L
Abstract: uPD431232LGF-A8 uPD431232 M1046 UPD431232LGF-A12
Text: DATA SHEET SHEET MOS INTEGRATED CIRCUIT µ PD431232L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT Description The µ PD431232L is 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel memory cells. The use of this technology and unique peripheral circuits makes these products high-speed devices. This
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PD431232L
32K-WORD
32-BIT
PD431232L
768-word
32-bit
100-pin
S100GF-65-8ET
PD431232L.
UPD431232L
uPD431232LGF-A8
uPD431232
M1046
UPD431232LGF-A12
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uPC2581
Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8
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PD7500
X10679EJAV0SG00
MF-1134)
1995P
uPC2581
uPC2002
2sd1557
uPA67C
uPB582
upc1237
uPC317
2P4M PIN DIAGRAM
2SC4328
uPC157
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D431000AGZ
Abstract: d431000a UPD431OOOAGZ-7OLL-KKH d431232 d431000ag D431000 ypd431000a D4310 d431000all 031T
Text: Low Power SRAM 7 DATA SHEET NEC MOS INTEGRATED CIRCUIT ~PD431000A 1 M-BIT CMOS STATIC RAM 128 K-WORD BY 8-BIT Description ThepPD431000A isa high speed,lowpower, and l,048,576bits 131,072 words x8 bits CMOS static RAM. The vPD431OOOA has two chip enable pins (CEI, CE2) to extend the capacity. And battery backup is
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PD431000A
ThepPD431000A
576bits
vPD431OOOA
uPD431OOOA
32-pin
yPD431232L
013io
D431000AGZ
d431000a
UPD431OOOAGZ-7OLL-KKH
d431232
d431000ag
D431000
ypd431000a
D4310
d431000all
031T
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ssqc 25
Abstract: No abstract text available
Text: PD431232L 32,768 x 32-Bit CMOS Synchronous Static RAM: W ith Burst Counter; 3.3-Volt Power NEC NEC Electronics Inc. Preliminary Information August 1994 Description Pin Configuration T h e ¿/PD431232L is a 3 2 ,7 6 8 -w o rd by 32 -b it sy n c h ro 100-Pin TQFP
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OCR Scan
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JUPD431232L
32-Bit
/PD431232L
100-Pin
PD431232L
bM27S55
0D5211D
pPD431232L
94CL-00036
ssqc 25
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Untitled
Abstract: No abstract text available
Text: NEC PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT Description The /¿PD431232L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel memory cells. The use of this technology and unique peripheral circuits makes these products high-speed devices. These
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OCR Scan
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32K-WORD
32-BIT
uPD431232L
768-word
32-bit
100-pin
00203i
PD431232L.
PD431232LGF:
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HXXXXXXXXX
Abstract: upd431232lgf
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-W ORD BY 32-BIT Description The ,PD431232L is 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel memory cells. The use of this technology and unique peripheral circuits makes these products high-speed devices. This
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OCR Scan
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32K-W
32-BIT
uPD431232L
768-word
32-bit
100-pin
F-65-8E
uPD431232LGF
HXXXXXXXXX
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD431232L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT Description The / j PD43 1232 L is 32,768 -w ord by 32 -bit synch rono us s ta tic RAM fa b rica te d w ith a d vanced C M O S te c h n o lo g y usin g N -channel m em ory cells.
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OCR Scan
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PD431232L
32K-WORD
32-BIT
100-pin
pow65
b427S2S
00b4342
juPD431232L
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d431232
Abstract: D431232L
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT Description The ¿¿PD431232L is 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel memory cells. The use of this technology and unique peripheral circuits makes these products high-speed devices. This
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OCR Scan
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32K-WORD
32-BIT
uPD431232L
768-word
32-bit
100-pin
S100GF-S5-8ET
/iPD431232L.
PD431232LGF:
d431232
D431232L
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32 PIN
Abstract: No abstract text available
Text: Low Power SR A M Selection Guide 1/ 2 Maximum supply current Access time Capacity Organization Version Part number Operating Standby |mA| (j/A) Data14”*“1 retention (/»A) 70 (70 ns. 85 ns. 100 ns) 100 15 CZ: 32-pin DIP (600mil). GW: 32-pin SOP <525mii)
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OCR Scan
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uPD431000A
32-pin
600mil)
525mii)
525mil)
32 PIN
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT Description T h e |iP D 431232L is a 32 ,768 -w o rd by 32 -b it synchronous static R A M fab ricated w ith advan ced C M O S te ch n o lo g y using N -channel m e m o ry cells.
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OCR Scan
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32K-WORD
32-BIT
431232L
100-pin
-17i8
b4H7S25
o-32i8
S100GF-95-6ET
/XPD431232L
431232LG
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