ic354
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-422000AB72F 2 M-WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC Description The MC-422000AB72F is a 2,097,152 words by 72 bits dynamic RAM module on which 9 pieces of 16 M DRAM: µ PD4217800 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the
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MC-422000AB72F
72-BIT
MC-422000AB72F
PD4217800
MC-422000AB72-60
MC-422000AB72-
M168S-50A6
ic354
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42S17800
Abstract: UPD42S17800
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S16800,4216800,42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The µPD42S16800, 4216800, 42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.
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PD42S16800
42S17800
PD42S16800,
42S17800,
28-pin
UPD42S17800
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4217800
Abstract: RAS 0501 PD42S uPD42S17800
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S17800, 4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The µ PD42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.
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PD42S17800,
PD42S17800
28-pin
PD42S17800-60,
VP15-207-2
4217800
RAS 0501
PD42S
uPD42S17800
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uPC2581
Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8
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PD7500
X10679EJAV0SG00
MF-1134)
1995P
uPC2581
uPC2002
2sd1557
uPA67C
uPB582
upc1237
uPC317
2P4M PIN DIAGRAM
2SC4328
uPC157
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S17800,4217800 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The/iPD42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.
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uPD42S17800
uPD4217800
The/iPD42S17800,
PD42S17800
28-pin
/jPD42S
juPD42S17800-70
PD42S17800-80,
130su
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nec 14t tv
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / juPD42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE D e s c rip tio n The /UPD42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.
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uPD42S17800
uPD4217800
/UPD42S17800,
PD42S17800
28-pin
/JPD42S17800-60,
pPD42S17800-70,
VP15-207-2
b427525
nec 14t tv
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3we22
Abstract: 8001P
Text: blE ]> n e • bllE7SES 0033^02 Tflfl HNECE jjPD421x 800/L, 42S1x800/L w NEC Electronics Inc. NEC ELECTRONICS INC Description The devices listed below are fa s t-p a g e dynam ic RAMs o rganized as 2M words by 8 bits a n d designed to o p e ra te from a single pow er supply. O ptional features
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uPD421x800/L
uPD42S1x800/L
42S16800
42S17800
8001Power
42S1X800/L
jjPD421
800/L,
b427S25
DG34DD4
3we22
8001P
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ao d425
Abstract: d425
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-422000AB72F 2 M-W ORD BY 72-BIT DYIMAMIC RAM MODULE FAST PAGE M O DE ECC Description The M C-422000AB72F is a 2,097,152 w ords by 72 bits dynam ic R A M m odule on which 9 pieces of 16 M D R A M : /PD4217800 are assembled.
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MC-422000AB72F
72-BIT
MC-422000AB72F
uPD4217800
ao d425
d425
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT / IP D 4 2 S 1 7 8 0 0 L , 4 2 1 7 8 0 0 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The ¿¡PD42S17800L, 4217800L are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode
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OCR Scan
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PD42S17800L,
4217800L
PD42S17800L
28-pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT jUPD42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE ★ Description The ¿¡PD42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.
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OCR Scan
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PD42S17800
PD42S17800,
28-pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-422000AB72F 2 M-WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC Description The MC-422000AB72F is a 2,097,152 words by 72 bits dynamic RAM module on which 9 pieces of 16 M DRAM: /PD4217800 are assembled. This module provides high density and large quantities of m em ory in a small space w ithout utilizing the
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OCR Scan
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PDF
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MC-422000AB72F
72-BIT
MC-422000AB72F
/iPD4217800
MC-422000AB72-60
MC-422000AB72-70
0AB72F
o39i8
M168S-50A6
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-422000LAB72F 3.3 V OPERATION 2 M-WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC Description The MC-422000LAB72F is a 2,097,152 w o rd s by 72 bits d yn a m ic RAM m o d u le on w h ic h 9 pieces o f 16 M DRAM: PD4217800L are assem bled.
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MC-422000LAB72F
72-BIT
MC-422000LAB72F
jUPD4217800L
M168S-50A8
b427525
00bl73Ã
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VG264265B
Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D
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256kxl6
256kxl6,
VG264265B
HM514265D
HY514264B
MT4C16270
uPD4244265LE
KM416C254D
TC5144265D
TC5117405CSJ
hyundai
cross reference guide
TC51V16160
Micron 4MX32 EDO SIMM
dram cross reference
cross reference
tc5117800cft
SAMSUNG Cross Reference
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT M>D42S16800,4216800,42S17800,4217800 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION ★ The MPD42S16800, 4216800, 42S17800, 4217800 are 2 097 152 words by 8 bits dynamic CMOS RAMs. These differ in refresh cycle and the //PD42S16800, 42S17800 can execute CAS before RAS self refresh.
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D42S16800
42S17800
MPD42S16800,
42S17800,
//PD42S16800,
28-pin
juPD42S
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SL680C
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ _ _ _ /¡u P D 42S 16800,4216800,42317800,421780C 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The /iPD42S16800, 4216800, 42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The
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421780C
uPD42S16800
uPD4216800
uPD42S17800
uPD4217800
PD42S16800,
42S17800
28-pin
R35-207-2
SL680C
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Untitled
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUIT /¿PD42S16800L, 4216800L, 42S17800L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The ¿¿PD42S16800L, 4216800L, 42S17800L, 4217800L are 2 097 152 words by 8 bits dynamic CMOS RAMs.
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uPD42S16800L
uPD4216800L
uPD42S17800L
uPD4217800L
PD42S16800L,
4216800L,
42S17800L,
4217800L
/iPD42S16800L,
42S17800L
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D42S17800-70
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT //¿PD42S16800,4216800,42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description T he /¿PD42S16800, 4216800, 42S17800, 4217800 are 2 097 152 w o rd s b y 8 b its d y n a m ic CMOS RAMs. These d iffe r in refresh cycle and th e /IPD42S16800, 42S17800 can exe cute CAS be fore RAS s e lf refresh.
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uPD42S16800
uPD4216800
uPD42S17800
uPD4217800
PD42S16800,
42S17800,
/IPD42S16800,
42S17800
28-pin
D42S17800-70
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800LE
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT _ / I P D 4 2 S 1 7 8 0 0 , 4 2 1 7 8 0 0 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE D escription TheixPD42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.
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uPD42S17800
uPD4217800
jiPD42S17800
28-pin
iiPD42S17800-60,
/iPD42S
IPD42S17800-80,
VP15-207-2
800LE
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC M O S INTEGRATED CIRCUIT MC-422000AB72F 2 M-WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC D escription The M C-422000AB72F is a 2,097,152 w ords by 72 bits dynamic R A M module on which 9 pieces of 16 M D R A M : |PD4217800 are assembled.
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OCR Scan
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MC-422000AB72F
72-BIT
C-422000AB72F
iPD4217800
MC-422000AB72-60
MC-422000A
168S-50A6
b457S5S
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT riuPD42S16800L#4216800L, 42S17800L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION * The iiPD42S16800L, 4216800L, 42S17800L, 4217800L are 2 097 152 words by 8 bits dynamic CMOS RAMs.
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riuPD42S16800L
4216800L,
42S17800L,
4217800L
iiPD42S16800L,
4217800L
PD42S16800L,
42S17800L
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-422000AB72F 2 M-WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC Description T h e M C - 4 2 2 0 0 0 A B 7 2 F is a 2 ,0 9 7 ,1 5 2 w o r d s b y 7 2 b its d y n a m ic R A M m o d u le o n w h ic h 9 p ie c e s o f 1 6 M
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MC-422000AB72F
72-BIT
M168S-50A6
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VO1263
Abstract: No abstract text available
Text: fiPD421x800/L, 42S1x800/L X = 6 , 7 2,097,152 X 8-Bit Dynamic CMOS RAM WEC NEC Electronics Inc. Description The devices listed below are fast-page dynam ic RAMs organized as 2 M words by 8 bits and designed to o p e ra te from a single power supply. O ptional features
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uPD421x800/L
uPD42S1x800/L
42S16800
42S17800
aintain42S1X800/L
pPD421x800/L,
42S1X800/L
ffPD421x800/L,
VO1263
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42S1780
Abstract: No abstract text available
Text: DATA SHEET ¿iPD42S17800,4217800 MOS INTEGRATED CIRCUIT 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE ★ Description The ¿¿PD42S17800,4 2 1 7 8 0 0 are 2,097,152 w ords by 8 bits C M OS dynam ic RAMs. The fast page mode capability realize high speed access and low power consum ption.
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uPD42S17800
uPD4217800
PD42S17800
28-pin
uPD42S17800-50
PD42S17800-60,
42S17800-70,
uPD42S17800-80
42S1780
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT « P D 42S 17800L , 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The ¿¿PD42S17800L, 4217800L are 2,097,152 words by 8 bits CMOS dynam ic RAMs. The fast page mode capability realize high speed access and low power consum ption.
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17800L
4217800L
uPD42S17800L
uPD4217800L
/xPD42S17800L
28-pin
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