GL496
Abstract: PD414PI 960nM
Text: PD414PI PD414PI High Speed PIN Photodiode for Optical Space Transmission • Features ■ Outline Dimensions 1. High speed response cut-off frequency : 40MHz 4.0 ± 0.2 2.0± 0.2 R1.75± 0.1 2.4 2.5 8˚ Mark (red) +0.2 - 0.1 1 8˚ 1 2 1 Anode 2 Cathode ■ Absolute Maximum Ratings
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PD414PI
40MHz)
GL496)
GL496
PD414PI
960nM
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PD414PI
Abstract: marshall industries
Text: PRODUCT INFORMATION PD414PI High Speed PIN Photodiode for Optical Space Transmission FEATURES IrDA Components Group APPLICATIONS: • AV equipment • Personal computers • Portable information terminal equipment ABSOLUTE MAXIMUM RATINGS • High speed response cut-off frequency: 40 MHz
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PD414PI
PD414PI-1
SMT98134
marshall industries
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PD414410
Abstract: No abstract text available
Text: PRELIMINARY Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 PD41_10 POW-R-BLOKTM Dual Diode Isolated Module 1000 Amperes / Up to 4400 Volts Description: Powerex Dual Diode Modules are designed for use in applications requiring rectification and isolated
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Untitled
Abstract: No abstract text available
Text: PD41_10 TM POW-R-BLOK Dual Diode Isolated Module 1000 Amperes / Up to 4000 Volts Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Description: Powerex Dual Diode Modules are designed for use in applications requiring rectification
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E78240)
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PD414010
Abstract: DUAL DIODE
Text: PD41_10 POW-R-BLOKTM Dual Diode Isolated Module 1000 Amperes / Up to 4000 Volts Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Description: Powerex Dual Diode Modules are designed for use in applications requiring rectification
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PD414410
Abstract: DUAL DIODE
Text: PRELIMINARY Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 PD41_10 TM POW-R-BLOK Dual Diode Isolated Module 1000 Amperes / Up to 4400 Volts Description: Powerex Dual Diode Modules are designed for use in applications requiring rectification and isolated
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Informati360
PD414410
DUAL DIODE
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CiA402
Abstract: DS402 canopen HM 4953 ic 8pin 6041H CIA DSP 402 CiA402-3 canopen digital object counter DS301 QSH6018
Text: PDx-116-60-SE PDx-140-42-SE TMCM-103 CANopen Firmware Manual Version: 1.00 2010-MAR-17 Trinamic Motion Control GmbH & Co KG Sternstraße 67 D - 20 357 Hamburg, Germany http://www.trinamic.com PD-116/PD-140/TMCM-103 CANopen Firmware Manual V1.00 / 2010-MAR-17
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PDx-116-60-SE
PDx-140-42-SE
TMCM-103
2010-MAR-17
PD-116/PD-140/TMCM-103
2010-MAR-17)
PD-140-42-SE]
PD-116-60-SE]
CiA402
DS402 canopen
HM 4953 ic 8pin
6041H
CIA DSP 402
CiA402-3
canopen
digital object counter
DS301
QSH6018
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cia402
Abstract: 6041H 1602H DS402 canopen 1A00h DS301 DSP402 TMCM-142 2312h CIA DSP 402
Text: TMCM-142 and PD-146 CANopen Firmware Manual Version: 1.01 2010-MAR-12 Trinamic Motion Control GmbH & Co KG Sternstraße 67 D - 20 357 Hamburg, Germany http://www.trinamic.com TMCM-142/PD-146 CANopen Firmware Manual V1.01 / 2010-MAR-12 Table of contents 1
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TMCM-142
PD-146
2010-MAR-12
TMCM-142/PD-146
2010-MAR-12)
TMCM-142-IF]
PD-146-60-SE]
cia402
6041H
1602H
DS402 canopen
1A00h
DS301
DSP402
2312h
CIA DSP 402
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414256
Abstract: D414256 NEC 20PIN DIP
Text: NEC /¿P D 414256 2 6 2 ,1 4 4 X 4 -B IT D YN A M IC NMOS RAM NEC Electronics Inc. P R E L IM IN A R Y INFORMATION Description Pin Configurations The //PD414256 is a 262,144-word by 4-bit dynamic N-channel MOS random access memory RAM de signed to operate from a single +5 V power supply. The
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20-Pin
uPD414256
144-word
/UPD414256
414256
D414256
NEC 20PIN DIP
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U7777
Abstract: D41416
Text: SEC jJ>D41416 1 6 ,3 8 4 X 4-BIT DYNAMIC NMOS RAM NEC Electronics Inc. Revision 2 Description Pin Configuration The /j PD41416 is a 16,384-word by 4-bit dynamic Nchannel MOS RAM designed to operate from a single +5 V power supply. The negative voltage substrate bias
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D41416
uPD41416
384-word
nPD41416
jPD41416
if7777777/
83-001785B
U7777
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NEC D41464
Abstract: D41464 IPD41464 L-12
Text: PD41464 65,536 X 4-Bit Dynamic NMOS RAM F IH l NEC Electronics Inc. Description Pin Configurations The f i PD41464 is a 65,536-word by 4-bit dynamic RAM designed to operate from a single + 5-volt power sup ply and fabricated with a double polylayer, IM-channel
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uPD41464
PD41464
536-word
JUPD41464
ffPD41464
NEC D41464
D41464
IPD41464
L-12
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D41416
Abstract: PD41416 PD41416-15 HPD41416-12 PD41416-12
Text: SEC jJ>D41416 1 6 ,3 8 4 X 4-BIT DYNAMIC NMOS RAM NEC Electronics Inc. Revision 2 Description Pin Configuration The /j PD41416 is a 16,384-word by 4-bit dynamic Nchannel MOS RAM designed to operate from a single +5 V power supply. The negative voltage substrate bias
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D41416
uPD41416
384-word
nPD41416
jPD41416
3-001783A
3-001784A
83-001785B
PD41416
PD41416-15
HPD41416-12
PD41416-12
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WJ88
Abstract: No abstract text available
Text: PD414PI a n P D 4 1 4 Htgti Speed PIN Ptiotodnxie for Optical Space Transm ission W • F e a tu re s ■ O utline D im ensions Unit: mm 1. High speed response (cut-off frequency : 40M Hz) 2 .0 ± 0.2 4 .0 1 2. Built-in visible light cut-off filter D e te c to r r e n t e r
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PD414PI
960nm)
PD414PJ
GL496)
WJ88
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D41464c
Abstract: D41464 NEC D41464 PD41464 WE-HC 41464-15 UPD41464V-10 C-15 L-12 PD41464-15
Text: NEC ¿/PD41464 6 5 ,5 3 6 X 4 -B IT D Y N A M IC NMOS RAM NEC Electronics Inc. Novem ber 1987 D e s c rip tio n The //PD41464 is a 65,536-word by 4-b it dynam ic Nchartnel MOS random access m em ory RAM designed to operate from a single + 5 -v o lt pow er supply. The
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uPD41464
536-word
PD41464
D41464c
D41464
NEC D41464
WE-HC
41464-15
UPD41464V-10
C-15
L-12
PD41464-15
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d41464
Abstract: No abstract text available
Text: SEC PD41464 65,536 X 4-Bit Dynamic NMOS RAM NEC Electronics Inc. Description Pin Configurations The /L/PD41464 is a 65,536-word by 4-bit dynamic RAM designed to operate from a single + 5-volt power sup ply and fabricated w ith a double polylayer, N-channel
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pPD41464
/L/PD41464
536-word
18-Pin
83IH-5386B
JJPD41464
d41464
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NEC 5C4
Abstract: JIPD41464
Text: PD41464 65,536 X 4-Bit Dynamic NMOS RAM ¿ T E / W NEC Electronics Inc. Description Pin Configurations The /j PD41464 is a 65,536-word by 4-bit dynamic RAM designed to operate from a single + 5-volt power sup ply and fabricated with a double polylayer, N-channel
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uPD41464
PD41464
536-word
JJPD41464
IIPD41464
D41464
NEC 5C4
JIPD41464
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41464
Abstract: M 41464 pd41464 41464 RAM NEC 41464-12 PD41464V-10 PD41464-10 pD41464V M 41464 B
Text: SEC /¿PD41464 6 5 ,5 3 6 x 4-B IT DYNAMIC NMOS RAM NEC Electronics Inc. Description Pin Configurations The y PD41464 is a 65,536-word by 4-bit dynamic NMOS RAM designed to operate from a single +5-volt power supply. The negative voltage substrate bias is
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uPD41464
536-word
/kPD41464
//PD41464
41464
M 41464
pd41464
41464 RAM
NEC 41464-12
PD41464V-10
PD41464-10
pD41464V
M 41464 B
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41464
Abstract: 41464 RAM d41464
Text: NEC ¿/PD41464 6 5 ,5 3 6 X 4-B IT DYNAMIC NMOS RAM NEC Electronics Inc. N o v e m b e r 1987 Description Pin Configurations T h e /vP D 41 464 is a 6 5 ,5 3 6 -w o r d b y 4 -b it d y n a m ic N c h a n n e l M O S r a n d o m a c cess m e m o ry R A M d e s ig n e d
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/PD41464
18-Pin
41464
41464 RAM
d41464
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transistor aa1t
Abstract: mPD41 PD414C
Text: w e c microcomputers,inc. 0 B S O L £ T £ /i.PD414-E /¿PD414 /¿.PD414-1 ft PD414-2 FULLY DECODED RANDOM ACCESS 4096 BIT DYNAM IC MEMORY D E S C R IP T IO N The N E C ¿ PD414 is a 4 0 9 6 words by 1 b it D ynam ic N channel MOS R A M . It was designed fo r m em ory applications where very lo w cost and large bit storage are
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uPD414-E
uPD414
uPD414-1
uPD414-2
PD414
SP414-4-77-1OK-WT
transistor aa1t
mPD41
PD414C
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UPD414C
Abstract: PD414 SP414
Text: N E C microcomputers,inc. /Ì.PD414-E fj.P D414 /¿.PD414-1 /¿PD 414-2 O B S O IX T ^ FULLY DECODED RANDOM ACCESS 4096 BIT DYNAM IC MEMORY DESCRIPTION The N E C /¿PD414 is a 4 0 9 6 words by 1 b it D ynam ic N channel M OS R A M . It was designed fo r m em ory applications where very low cost and large bit storage are
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uPD414-E
uPD414
uPD414-1
uPD414-2
PD414
iPD414
SP414-4-77-1OK-WT
UPD414C
SP414
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PS224
Abstract: PS235 PS835 PD416 PS-224 PD86 pd46 PS815 PD215 PD816
Text: 41E D MIL ELECTRONICS INC blbmhM n000271 1 • ■«* 1.80 • K - “ S ttlA ■>* ^ IN lit A 1 WATTS O F ISOLATED O U TPU T POW ER • T A T r) 7 • POWER SUPPLY MODEL 1.00 - /' SINGLE O R DUAL O U TPU TS PRINTED C IR CU IT MOUNTING LESS THAN 3/4 CUBIC INCH
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ps870
ps880
ps890
ps8100
pd510
pd512
pd210
pd212
pd410
pd412
PS224
PS235
PS835
PD416
PS-224
PD86
pd46
PS815
PD215
PD816
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LT1560ED
Abstract: PQ2WZ51 LT024MD GP1F31T s202t02 GP1U801X LT022 GP2L20L GP1U78R PQ05DZ51
Text: SHARP Model No. List Model No. List • Infrared Emitting Diodes Model No. GL1F20 GL380 QL381 GL382 GL390 GL390V GL453 GL454 GL480 GL480Q GL4S3Q GL4800 GL460 GL461 GL4600 GL4610 GL4100 GL4200 GL4910 GL496 GL513F GL514 GL560 GL561 GL533 GL537 GL538 GL550 GL551
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GL1F20
GL380
QL381
GL382
GL390
GL390V
GL453
GL454
GL480
GL480Q
LT1560ED
PQ2WZ51
LT024MD
GP1F31T
s202t02
GP1U801X
LT022
GP2L20L
GP1U78R
PQ05DZ51
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marking K2 diode
Abstract: MARKING 5D DIODE schottky diode marking A7
Text: DIODE wffife SOT-23/TO-236AB ‘TM PD ’ GENERAL-PURPOSE a n d LOW-LEAKAGE D IO D ES ELECTRICAL CHARACTERISTICS a t T . = 25°C vF Description *rr Max. Max. nA (ns) <PF) 1 ,2 ,3 10 25 4.0 6.0 ANCK VBR Min. Max. Marking (mA) (V) (V) @IF (mA) 1.0 Device Type
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OT-23/TO-236AB
TMPD914
TMPD2836
TMPD2838
TMPD4148
TMPD6050
TMPD7000
A8920SLR)
BAV70
BAV99
marking K2 diode
MARKING 5D DIODE
schottky diode marking A7
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UPD6401
Abstract: AKS TI PDG400
Text: - 342 - / /P D 6 4 0 0 / 6 4 0 1 •Ä Ä 7 - '* & ? JU N R M y * ¿¿PD6400 6401 (±, ') ■ # * * W 4 • flfcÄ : • =¡ > C( ) > ^ - 7 X H K- ^ NEC > t a —^ h a - 7 . ti/ ¿P D 6 4 0 1 ] U ftiJftJfflT K l / X * [5]#35>S6Iö]S&, P L L [h ]S & , x “
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uPD6400
uPD6401
PD41464
PD41464X
AKS TI
PDG400
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