BOX53
Abstract: BOW83 NSOU45 PM016K40 BD875 6037Y MPS-U45 MPSU45 Motorola MPSU45 BSS50 SOT
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) Min NPN Darlington Transistors, (Cont'd) 5 10 MPSU45 MPSU45 2S01413 2S0687 2N6037 MJE3300 6037Y SOM3300 SOM3300 SOM3303 Solid Stine Motorola ToshlbaCorp ToshibaCorp
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MPSU45
2S01413
2S0687
2N6037
MJE3300
6037Y
SOM3300
SOM3303
BOX53
BOW83
NSOU45
PM016K40
BD875
MPS-U45
Motorola MPSU45
BSS50 SOT
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transistor 8026
Abstract: pnp 150w darlington transistor to3 package
Text: 2N6052 MECHANICAL DATA PNP DARLINGTON SILICON POWER TRANSISTOR Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1 1.52 (0.06) 3.43 (0.135) 2 VCEO = 100V IC = 12A PD = 150W 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655)
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2N6052
O-204AA)
transistor 8026
pnp 150w darlington transistor to3 package
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Untitled
Abstract: No abstract text available
Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6059 • High Current Capability. • Hermetic TO3 Metal package. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC IB PD TJ Tstg Collector – Base Voltage
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2N6059
O-204AA)
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Untitled
Abstract: No abstract text available
Text: 2N6052 MECHANICAL DATA PNP DARLINGTON SILICON POWER TRANSISTOR Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1 1.52 (0.06) 3.43 (0.135) 2 VCEO = 100V IC = 12A PD = 150W 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655)
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2N6052
O-204AA)
3802s,
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Untitled
Abstract: No abstract text available
Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6059 • High Current Capability. • Hermetic TO3 Metal package. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC IB PD TJ Tstg Collector – Base Voltage
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2N6059
O-204AA)
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BOX34B
Abstract: bot64a BOX54B sgs-ates transistors bot64 B064S MJ0117 BOW94B BOV64 MJ-01
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ie Max (A) PD Max (W) fT hFE Min Max (Hz) leBO Max (A) tr Max tf Max TOper Max (8) (8) (Oe) Package Style PNP Darlington TransisLors, (Cont'd) 2N6041 2SBS72A 2SB939A 2SB951A BOX54B B0266A
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2N6041
2SBS72A
2SB939A
2SB951A
BOX54B
B0266A
B064S
B0700
B0700A
BOX34B
bot64a
sgs-ates transistors
bot64
MJ0117
BOW94B
BOV64
MJ-01
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2SB1100K
Abstract: 2SB638H 2SB1147 2SB1100M 2SB1099 2SB711 PMD13K100 2SB1099L
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max V BR CEO (A) (V) PD hFE Max ON) Min Max tT 'CBO tr Max Max (HZ) (A) (8) r (CE)sat 'Oper Max (Ohms) Max (°C) Package Style Darlington Transistors, PNP (Cont'd) . . . .5 -10 . . .15 . . . .
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2N6053
PMD13K60
MJ920
2SB872A
2SB939A
2SB951A
BDX54B
BD266A
2SB1100K
2SB638H
2SB1147
2SB1100M
2SB1099
2SB711
PMD13K100
2SB1099L
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Untitled
Abstract: No abstract text available
Text: Search Results Part number search for devices beginning "2N5933" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N5933 NPN TO3 100V 30A 20 100 4/20 30MHz
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2N5933"
2N5933
30MHz
2N5934"
2N5934
2N6251
2N6260"
2N6260
20MHz
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BU409D
Abstract: rca1805 IR431 RCA410 RCA1B09 RCA423 sgs-ates transistors IR423 IR410 BU104
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) PD r 'CBO Max hFE fT ON) Min (Hz) Max (A) Max (s) (CE)Mt Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15 .
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BU407H
BU409D
BU409
BU407
BUY87
2SC3591
2SC3175
2SC3176
BUY18S
rca1805
IR431
RCA410
RCA1B09
RCA423
sgs-ates transistors
IR423
IR410
BU104
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box54c
Abstract: BOX34C b0336 BOW84C B0650 2SB1100K 2SB1098L BOW24C 2SB1099 2SB897
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ie Max (A) PD Max (W) fT hFE Min Max (Hz) leBO Max (A) t, Max tf Max (s) (s) TOper Max (Oe) Package Style PNP Darlington Transistors, (Co nt' d) 5 10 B0262B B0262B B0682 2SB1098M 2SB1098L
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B0262B
B0682
2SB1098M
2SB1098L
2SB1098K
2SB1227
2SB885
SGS127
box54c
BOX34C
b0336
BOW84C
B0650
2SB1100K
BOW24C
2SB1099
2SB897
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B0677A
Abstract: B0677 a B0331 BOW53A b0263 75G60 2S01275 MJ4000
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO Ie Max PD Max (V) (A) (W) hFE Min Max fT leBO Max (Hz) (A) tr Max (8) tf Max (8) Toper Max ee) Package Style NPN Darlington Transistors, (Cont'd) 5 10 15 20 2S01164Z 2S01164Z SON301 U2T301
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2S01164Z
SON301
U2T301
SON401
U2T401
2S01764
B0677A
B0677 a
B0331
BOW53A
b0263
75G60
2S01275
MJ4000
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2sd898 hitachi
Abstract: KT816A 2SC2906A BUV36 2SD90 BUV36A 2n6095 2N5700 MJE8500 THB13
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO Max (A) (V) ON) PD hFE Min *T (HZ) r 'CBO Max (A) Max (s) (CE)ut Max (Ohms) Top«r Max Package Style (°C) Devices 20 Watts or More, (Cont'd) . . . .5 . . .10 . . . -15 . .
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SDT801
SDT701
2SC3178
2SC3059
MJE1320
BUV36A
2SD1301
2SD897A
2sd898 hitachi
KT816A
2SC2906A
BUV36
2SD90
2n6095
2N5700
MJE8500
THB13
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BD561
Abstract: BD585 PT9788A 8D434 BDX24 2SD810 BD186 motorola MJE2480 BD163 BD272
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) hFE fT ICBO t0N T(CE)Mt Max PD Max Max ON) Min (Hz) (A) (8) Max (Ohms) Toper Max CO Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . -10 MRF222 MRF223
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MRF222
MRF223
MRF238
2N6083
SD1272
BD162
2SD810
PT9795
BD561
BD585
PT9788A
8D434
BDX24
BD186 motorola
MJE2480
BD163
BD272
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KT827B
Abstract: KT935A BDX61 kt827 rcs258 TO3VAR package
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO Of) (A) hFE fT •CBO Max PD Max toN Max ON) Min (Hz) (A) (8) r (CE)sat Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) 10 MRF422 MRF422 PT9780
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MRF422
PT9780
2N2739
2N2745
2N2751
2N1823
StR-5/16
KT827B
KT935A
BDX61
kt827
rcs258
TO3VAR package
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transistor te 2443
Abstract: No abstract text available
Text: 2N6054 SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The 2N6294 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 66 < o m MAXIMUM RATINGS 4.o A Ie 8.o A PEAK 6o V Pd is s 5o W @ Te # 25 0C Tj -65 0C to +2oo 0C
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2N6054
2N6294
RAD8-89
RAD190
transistor te 2443
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Untitled
Abstract: No abstract text available
Text: 2N6059 SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The ASI 2N6059 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 3 MAXIMUM RATINGS Ie 12 A Vce 1OO V Pd is s 15O W @ Te " 25 0C Tj -65 0C to &2OO 0C Ts t g -65 0C to &2OO 0C
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2N6059
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Untitled
Abstract: No abstract text available
Text: 2N6052 SILICON PNP-DARLINGTON POWER TRANSISTOR DESCRIPTION: The ASI 2N6052 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO - 3 MAXIMUM RATINGS Ie 12 A Vc e -1OO V Pd i s s 15O W @ T e # 25 0 C Tj -65 0 C to &2OO 0 C Ts t g
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2N6052
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2N6054
Abstract: No abstract text available
Text: 2N6054 SILICON PNP-DARLINGTON POWER TRANSISTOR DESCRIPTION; The 2N6054 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 3 MAXIMUM RATINGS Ie 8.O A Vc e -8O V Pd is s 1OO W @ Te " 25 0C Tj 65 0C to +2OO 0C Ts t g 65 0C to +2OO 0C
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2N6054
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2N4265
Abstract: Sprague Electric 2N5832 2N3859 2N2926-1 660111 sprague TO92 2N3404 NPN 2N4062 2N2712
Text: SPRAGUE BIPOLAR TRANSISTORS • BIPOLAR TRANSISTORS THE MARK OF RELIABILITY SERIES 2N TRANSISTORS • Sm all-signal TO-92 plastic transistors. JEDEC ‘2N’ registered types. Catalog Number Case Style PD , = 25°C mW 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924
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2N2711
2N2712
2N2713
2N2714
2N2923
2N2926
2N3395
2N3396
2N3397
2N3398
2N4265
Sprague Electric
2N5832
2N3859
2N2926-1
660111
sprague TO92
2N3404 NPN
2N4062
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2N8261
Abstract: No abstract text available
Text: Power Transistors TO-66 Case TYPE NO. te A NPN PNP 2N3054 Pd (W) MAX bvcbo hFE (V) b v CEO (V) MIN MIN MIN MAX le (A) VCE(SAT) Iß (A) (V) MAX (MHz) MIN 4.0 25 90 55 25 150 0.5 1.0 0.5 0.8 2N3054A 2N6049 4.0 75 90 55 25 150 0.5 0.5 0.5 0.8 2N3583 2N6420
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2N3054
2N3054A
2N3583
2N3584
2N3S85
2N3738
2N3739
2N3740
2N3740A
2N3741
2N8261
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Untitled
Abstract: No abstract text available
Text: SEMELAB LTD 3?E J> 8133107 00D005S 7 • SMLB ■iMIJSMJ:1 Type No. Option 2N6038 Polarity Package < o m O h * tfftr rtfm iii •c cont hF E @ V c e /1c fT Pd NPN NPN NPN PNP PNP SOT 3 2 SOT32 T063 T066 TO 3 60 80 100 55 60 4 4 29 4 12 750-15k 750-15k 20-100
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00D005S
2N6038
750-15k
750-12k
750-18k
750min
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2n3054
Abstract: No abstract text available
Text: Power Transistors TO-66 Case TYPE NO. NPN •c A PHP 2N3054 Pd bvcbo bvceo (W) (V) w MAX @ IC hFE W VCE(SAT) @ >C (V) (A i *r (MHz) MIN MIN MIN MAX 4. 0 25 90 55 25 150 0.5 1.0 0. 5 0. 8 MAX MIN 2N3054A 2N6049 4. 0 75 90 55 25 150 0. 5 0.5 0.5 0.8 2N3583
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2N3054
2N3054A
2N3583
2N3584
2N3585
2N3738
2N3739
2N3740
2N3740A
2N3741
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2N3738
Abstract: 2N3054 2N3054A 2N3583 2N3584 2N3736 2N6049 2N6420 2N6421 2N6422
Text: Power Transistors a v ii -j K Jy a TO-66 Case TYPE NO. •c A PNP NPN 2N3054 Pd (W) bvc b o bvceo (V) (V) ie (A) hFE VCE(SAT) ® «e (V) (A) MIN MIN MIN MAX 4 .0 25 90 55 25 1 50 0 .5 1.0 0 .5 0 .8 0.8 MAX MAX h {MHz) MIN 2N 3054A 2N6049 4 .0 75 90 55
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2N3054
2N3054A
2N6049
2N3583
2N6420
2N3584
2N6421
2N3S85
2N6422
2N3738
2N3738
2N3054
2N3736
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BD368
Abstract: MPC1000 MPC900 bd365 voltage regulators 20 amp to3 b0365 BD364 MJ3771 2N5629 2N5631
Text: NPN PNP v CEO V o lts M in./M ax. •c Am p V CE sat @ >C V o lts Max. Am p. f T MHz PD Case Watts le = 16.0 A. MJ4034 BD317 2N 5629 M J4035 2N 5630 M J3773 2N5631 MJ4031 BD318 2N6029 M J4032 2 N6030 2N6031 80 100 100 100 120 140 140 1 0 0 0 /2 5 /25 /10 0
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MJ4034
MJ4031
BD317
BD318
2N5629
2N6029
MJ4035
MJ4032
2N5630
2l\l6030
BD368
MPC1000
MPC900
bd365
voltage regulators 20 amp to3
b0365
BD364
MJ3771
2N5631
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