PCN13420 Search Results

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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF281 Rev. 6, 10/2008 RF Power Field Effect Transistors MRF281SR1 MRF281ZR1 Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for	Original	PDF	MRF281 MRF281SR1 MRF281ZR1 MRF281SR1
UT-141A-TP Abstract: NIPPON CAPACITORS UT141A-TP MRFE6P3300H 863MHz dvbt 250GX-0300-55-22 AN1955 CDR33BX104AKYS JESD22-A114 Text: Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 2, 12/2009 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance	Original	PDF	MRFE6P3300H MRFE6P3300HR3 UT-141A-TP NIPPON CAPACITORS UT141A-TP MRFE6P3300H 863MHz dvbt 250GX-0300-55-22 AN1955 CDR33BX104AKYS JESD22-A114
200S Abstract: EB212 MRF281 MRF281SR1 MRF281ZR1 PCN13420 MRF281Z PCN13232 Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF281SR1 MRF281ZR1 N - Channel Enhancement - Mode Lateral MOSFETs LIFETIME BUY Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for	Original	PDF	MRF281SR1 MRF281ZR1 MRF281SR1 MRF281 200S EB212 MRF281 MRF281ZR1 PCN13420 MRF281Z PCN13232
3734 Japan Abstract: PCN13232 Text: Freescale Semiconductor Technical Data Document Number: MRF281 Rev. 6, 10/2008 RF Power Field Effect Transistors MRF281SR1 MRF281ZR1 Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for	Original	PDF	MRF281 MRF281SR1 MRF281ZR1 3734 Japan PCN13232
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 2, 12/2009 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance	Original	PDF	MRFE6P3300H MRFE6P3300HR3