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    PC 150-75 HG Search Results

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    PC 150-75 HG Price and Stock

    FIBOX PC 150/75 HG

    ENCLOSURE 7.1"L X 5.1"W
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    DigiKey PC 150/75 HG Ammo Pack 20 1
    • 1 $34.91
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    Newark PC 150/75 HG Bulk 1
    • 1 $30.23
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    TME PC 150/75 HG 65 1
    • 1 $26.18
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    FIBOX UL PC 150/75 HG

    BOX PLAS LGT GRY 7.1"L X 5.1"W
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    DigiKey UL PC 150/75 HG Box 1
    • 1 $66.03
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    Newark UL PC 150/75 HG Bulk 10 1
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    FIBOX PC 150/75 HG ENCLOSURE

    Enclosure, Ip66, Ip67, Nema 1, 4, 4X, 6, Multipurpose, 75 Mm, 130 Mm, 180 Mm, Pc (Polycarbonate) Rohs Compliant: Yes |Fibox PC 150/75 HG ENCLOSURE
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    Newark PC 150/75 HG ENCLOSURE Bulk 30 1
    • 1 $24.31
    • 10 $21.4
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    FIBOX UL PC 150/75 HG (ALTERNATE: 6411314)

    PC Enclosure, 5" Wide x 3" Deep x 7" High, Gray Cover, UL 508 | Fibox UL PC 150/75 HG
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    RS UL PC 150/75 HG (ALTERNATE: 6411314) Bulk 6 1
    • 1 $64.91
    • 10 $55.18
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    PC 150-75 HG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PC 150-75 HG Unknown ENCLOSURE HIGH BASE GREY COVER Original PDF

    PC 150-75 HG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UL-94-5V

    Abstract: No abstract text available
    Text: 130 X 180 X 75 FIBOX MNX PC Order symbol PC 150/75 HG El. number Sweden Denmark Finland 3420353 EAN-code 6418074022189 Including Enclosure cover with cover screws, body with mounting screws and gasket. USA: UL Type 1,4, 4X, 6 EURO: IP 66/67 EN 60529 ; IK 08 (EN 50102)


    Original     		PDF UL94-5V 14551H UL-94-5V

    g30n60c3

    Abstract: TA49051 igbt g30n60c3 HGTG30N60C3 LD26 RHRP3060 740 MOSFET TRANSISTOR g30n60
    Text: HGTG30N60C3 S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT January 1997 Features • • • • • Package 63A, 600V at TC = 25oC 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . 230ns at TJ = 150oC Short Circuit Rating


    Original     		PDF HGTG30N60C3 230ns 150oC O-247 HGTG30N60C3 150oC. g30n60c3 TA49051 igbt g30n60c3 LD26 RHRP3060 740 MOSFET TRANSISTOR g30n60

    40n60c3

    Abstract: g40n6 RHRP30120 40N60C3R 0n60 TA49049 40N60C RHRP30120 equivalent HGTG40N60C3R LD26
    Text: [ /Title HGT G40N6 0C3R /Subject (75A, 600V, Rugged, UFS Series NChannel IGBT) /Autho r () /Keywords (Intersil Corporation, semiconductor, Avalanche Energy Rated, Switch ing Power Supplies, Power T CT DUC PRO PRODU E T E E L T O U OBS UBSTIT 0C3 6 S N E


    Original     		PDF G40N6 40n60c3 g40n6 RHRP30120 40N60C3R 0n60 TA49049 40N60C RHRP30120 equivalent HGTG40N60C3R LD26

    g30n60c3

    Abstract: TA49051 HGTG30N60C3 LD26 RHRP3060 g30n60
    Text: HGTG30N60C3 Data Sheet January 2000 63A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG30N60C3 HGTG30N60C3 150oC. 230ns 150oC g30n60c3 TA49051 LD26 RHRP3060 g30n60

    G30N60B3

    Abstract: HGTG30N60B3 LD26 TA49170
    Text: HGTG30N60B3 Data Sheet January 2000 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG30N60B3 HGTG30N60B3 150oC. 150oC G30N60B3 LD26 TA49170

    g30n60

    Abstract: g30n60c3d RHRP3060 TA49051 TA49053 HGTG30N60C3D
    Text: HGTG30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


    Original     		PDF HGTG30N60C3D HGTG30N60C3D 150oC. TA49051. TA49053. 230ns 150oC g30n60 g30n60c3d RHRP3060 TA49051 TA49053

    40n60c3

    Abstract: 40n60 40N60C3R HGTG40N60C3R LD26 RHRP30120
    Text: HGTG40N60C3R Semiconductor 75A, 600V, Rugged, UFS Series N-Channel IGBT May 1997 Features Description • 75A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. These devices


    Original     		PDF HGTG40N60C3R 150oC 170ns 40n60c3 40n60 40N60C3R HGTG40N60C3R LD26 RHRP30120

    g30n60c3d

    Abstract: G30N60 TA49053 TA49051 HGTG30N60C3D LD26 RHRP3060
    Text: HGTG30N60C3D Data Sheet January 2009 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


    Original     		PDF HGTG30N60C3D HGTG30N60C3D 150oC. TA49051. TA49053. 230ns 150oC g30n60c3d G30N60 TA49053 TA49051 LD26 RHRP3060

    40N60C3R

    Abstract: HGTG40N60C3R LD26 RHRP30120 40N60C3
    Text: HGTG40N60C3R 75A, 600V, Rugged, UFS Series N-Channel IGBT May 1997 Features Description • 75A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. These devices


    Original     		PDF HGTG40N60C3R 150oC 170ns 40N60C3R HGTG40N60C3R LD26 RHRP30120 40N60C3

    TA49053

    Abstract: g30n60c3d
    Text: HGTG30N60C3D Data Sheet January 2009 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


    Original     		PDF HGTG30N60C3D HGTG30N60C3D 150oC. TA49051. TA49053. 230ns 150oC TA49053 g30n60c3d

    g30n60c3d

    Abstract: G30N60 transistor 40411 40411 transistor TA49051 TA49014 No 42 G30N60C3D TA49053 HGTG30N60C3D N-channel enhancement 200V 60A
    Text: HGTG30N60C3D S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 1997 Features • • • • • Package o 63A, 600V at TC = 25 C Typical Fall Time . . . . . . . . . . . . . . 230ns at TJ = 150oC Short Circuit Rating


    Original     		PDF HGTG30N60C3D 230ns 150oC O-247 HGTG30N60C3D 150oC. 1-800-4-HARRIS g30n60c3d G30N60 transistor 40411 40411 transistor TA49051 TA49014 No 42 G30N60C3D TA49053 N-channel enhancement 200V 60A

    G30N60B3D

    Abstract: G30N60 G30N60B3 HGTG30N60B3D LD26 TA49053 TA49170 TA49172
    Text: HGTG30N60B3D Data Sheet January 2000 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		PDF HGTG30N60B3D HGTG30N60B3D 150oC. TA49170. TA49053. 150oC G30N60B3D G30N60 G30N60B3 LD26 TA49053 TA49170 TA49172

    Untitled

    Abstract: No abstract text available
    Text: HGTG30N60B3 Data Sheet November 2004 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG30N60B3 HGTG30N60B3 150oC. 150oC

    G30N60B3

    Abstract: GE 443 HGTG30N60B3 HGTG30N60B3D LD26 TA49170
    Text: HGTG30N60B3 Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG30N60B3 HGTG30N60B3 150oC. 150oC G30N60B3 GE 443 HGTG30N60B3D LD26 TA49170

    g30n60b3

    Abstract: G30N60 HGTG30N60B3 TA49170 HGTG30N60B3D LD26 DIODE B2 IC2560
    Text: HGTG30N60B3 Data Sheet August 2003 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG30N60B3 HGTG30N60B3 150oC. 150oC g30n60b3 G30N60 TA49170 HGTG30N60B3D LD26 DIODE B2 IC2560

    g30n60b3

    Abstract: HGTG30N60B3
    Text: HGTG30N60B3 Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG30N60B3 HGTG30N60B3 150oC. TA49170. g30n60b3

    g30n60b3

    Abstract: HGTG30N60B3 8508 zener g30n60 HGTG30N60B3D LD26 TA49170 G30N60B
    Text: HGTG30N60B3 TM Data Sheet November 2000 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    Original     		PDF HGTG30N60B3 HGTG30N60B3 150oC. 150oC g30n60b3 8508 zener g30n60 HGTG30N60B3D LD26 TA49170 G30N60B

    g30n60b3

    Abstract: HGTG30N60B3 HGTG30N60B3D LD26 TA49170
    Text: HGTG30N60B3 Data Sheet November 2004 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG30N60B3 HGTG30N60B3 150oC. 150oC g30n60b3 HGTG30N60B3D LD26 TA49170

    40n60c3

    Abstract: 40N60C3R RHRP30120 HGTG40N60C3R LD26 40n60
    Text: HGTG40N60C3R S E M I C O N D U C T O R 75A, 600V, Rugged, UFS Series N-Channel IGBT May 1997 Features Description • 75A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as


    Original     		PDF HGTG40N60C3R 150oC 170ns 1-800-4-HARRIS 40n60c3 40N60C3R RHRP30120 HGTG40N60C3R LD26 40n60

    G40N60

    Abstract: HGTG40N60C3 LD26 RHRP3060 g40n60c3
    Text: HGTG40N60C3 Data Sheet January 2000 75A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction


    Original     		PDF HGTG40N60C3 HGTG40N60C3 150oC. 100ns 150oC G40N60 LD26 RHRP3060 g40n60c3

    HGTG30N60C3D

    Abstract: IGBTs g30n60c3d No 42 G30N60C3D TA49051 TA49053 LD26 RHRP3060
    Text: HGTG30N60C3D Data Sheet December 2001 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


    Original     		PDF HGTG30N60C3D HGTG30N60C3D 150oC. TA49051. TA49053. 230ns 150oC IGBTs g30n60c3d No 42 G30N60C3D TA49051 TA49053 LD26 RHRP3060

    G30N60C3

    Abstract: igbt g30n60c3 HGTG30N60C3 LD26 RHRP3060 TA49051
    Text: HGTG30N60C3 Data Sheet January 2000 63A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG30N60C3 HGTG30N60C3 150oC. 230ns 150oC G30N60C3 igbt g30n60c3 LD26 RHRP3060 TA49051

    hgtm

    Abstract: CQ 637
    Text: S SftSKR HGTM12N60D1 12A, 600V N-Channel IGBT December 1993 Package Features JEDEC T0-204AA BOTTOM VIEW • 12 Amp, 600 Volt • Latch Free Operation • Typical Fall Time <500ns • High Input Impedance Jf >COLLECTOR (FLANGE EMITTER • Low Conduction Loss


    OCR Scan     		PDF HGTM12N60D1 T0-204AA 500ns 05/tD hgtm CQ 637

    HARRIS IGBT

    Abstract: No abstract text available
    Text: HA RR IS S E M I C O N D S E CT OR H M3Ü 2 27 1 D O S G IT ? 34h H H A S HGTM12N60D1 ffl H f f l S December bûE ]> 12A, 600V N-Channel IGBT 1993 Package Features JEDEC T0-204AA BOTTOM VIEW • 12 Amp, 600 Volt • Latch Free Operation • Typical Fall Time <500ns


    OCR Scan     		PDF HGTM12N60D1 T0-204AA 500ns HARRIS IGBT